CN101859836B - Light-conducting type light-emitting diode and manufacturing method thereof - Google Patents
Light-conducting type light-emitting diode and manufacturing method thereof Download PDFInfo
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- CN101859836B CN101859836B CN200910131542.1A CN200910131542A CN101859836B CN 101859836 B CN101859836 B CN 101859836B CN 200910131542 A CN200910131542 A CN 200910131542A CN 101859836 B CN101859836 B CN 101859836B
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Abstract
The invention discloses a light-conducting type light-emitting diode which comprises a baseplate, a first semiconductor layer, an epitaxial light-emitting layer, a transparent conducting layer, a first electrode and a second electrode, wherein the first semiconductor layer is arranged on the baseplate; the epitaxial light-emitting layer is arranged on the first semiconductor layer and contains a hole, and the section of the side wall of the hole is an inclined surface; the transparent conducting layer is arranged on the epitaxial light-emitting layer; the first electrode is arranged on the first semiconductor layer and positioned in the hole; and the second electrode is arranged on the transparent conducting layer. The invention also discloses a manufacturing method of the light-conducting type light-emitting diode. The invention can effectively increase the light-emitting area of the light-conducting type light-emitting diode, enhance the light-emitting efficiency of the light-conducting type light-emitting diode and reduce the operational voltage of the light-conducting type light-emitting diode.
Description
Technical field
The present invention relates to light-emitting diode field, particularly relate to a kind of light-conducting type light-emitting diode; The invention still further relates to the manufacture method of described light-conducting type light-emitting diode.
Background technology
Light-emitting diode (LED Light Emitting Diode) is the luminescence component made by semi-conducting material.This assembly has two electrode terminals, between two electrode terminals, applies voltage, passes into minimum electric current, dump energy can be excited and disengages with the form of light via the combination in electronics electricity hole, and this is the basic principle of luminosity of light-emitting diode.Light-emitting diode is different from general incandescent lamp bulb, light-emitting diode is chemiluminescence, the advantage such as have that power consumption is low, assembly life-span is long, need not warm up the lamp time and reaction speed is fast, add that its volume is little, vibration resistance, be applicable to volume production, easily the demand in fit applications is made the assembly of minimum or array.Light-emitting diode is generally used on the indicating device and display unit of information, communication and consumption electronic products at present, becomes significant components indispensable in daily life.
Light-emitting diode is divided into visible light emitting diode (wavelength 450～680nm) and the large class of invisible light light-emitting diode (wavelength 850～1550nm) two according to emission wavelength.If can be further divided into binary compound (as GaAs, GaSb, GaN etc.), ternary compound (as AlxGa1-xAs, AlxGa1-xP, In1-xGaxAs etc.), quaternary compound (as AlInGaP, InAlGaAs, AlxGa1-xAsyP1-y etc.) and the large class of GaN based compound four with the epitaxial layer material of its use.Distinguish with brightness, light-emitting diode can be divided into high brightness LED and the general large class of brightness light-emitting diode two.But, because light-emitting diode has directive property, each manufacturer criterion is also inconsistent, directly weighs light-emitting diode luminosity and there is no method right area and separate high brightness LED and general brightness light-emitting diode.Add lumination of light emitting diode brightness, luminous efficiency is directly related with epitaxial layer material, therefore to use epitaxial layer material category as the standard of distinguishing high brightness LED, described high brightness LED refers to quaternary compound and the made light-emitting diode of GaN based compound, binary compound and the made light-emitting diode of ternary compound beyond general brightness light-emitting diode refers to GaN and is.
Shown in Figure 1, existing light-emitting diode 1 ' comprises a substrate 10 ', a n type semiconductor layer 11 ', a luminescent layer 12 ', a p type semiconductor layer 14 ', a transparency conducting layer 15 ', N-type electrode 16 ' and one P type electrode 17 '.Described n type semiconductor layer 11 ' is arranged at described substrate 10 ', described luminescent layer 12 ' is arranged at described n type semiconductor layer 11 ', described p type semiconductor layer 14 ' is arranged at the luminescent layer 12 ' of part, described transparency conducting layer 15 ' is arranged at described p type semiconductor layer 14 ', described N-type electrode 16 ' is arranged at described luminescent layer 12 ', and described P type electrode 17 ' is arranged at described transparency conducting layer 15 '.As can be seen from Figure 1, described p type semiconductor layer 17 ' does not cover described luminescent layer completely, therefore the light-emitting zone of light-emitting diode 1 ' is only limited to the region being covered by p type semiconductor layer 17 ', so the light-emitting area of light-emitting diode 1 ' is little, voltage when its operation is higher.
In order to address the above problem, the invention provides a kind of light-emitting diode that increases light-emitting area, effectively promote the luminous efficiency of described light-emitting diode, to meet future market demand.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of light-emitting diode, can effectively increase light-emitting area, improving luminous efficiency, the voltage while reducing operation; For this reason, the present invention also will provide a kind of manufacture method of described light-emitting diode.
For solving the problems of the technologies described above, one of technical scheme that light-emitting diode of the present invention adopts is that described light-emitting diode comprises:
One substrate;
One first semiconductor layer, is arranged on described substrate;
One extension goes out photosphere, is arranged on described the first semiconductor layer, and comprises a hole, and the cross section of the sidewall of described hole is an inclined-plane;
One transparency conducting layer, is arranged at described extension and goes out on photosphere;
One first electrode, is arranged on described the first semiconductor layer, and is arranged in described hole; And
One second electrode, is arranged on described transparency conducting layer.
Two of the technical scheme that light-emitting diode of the present invention adopts is that described light-emitting diode comprises:
One substrate;
One first photon crystal structure, is arranged on described substrate;
One first semiconductor layer, is arranged on described photon crystal structure;
One extension goes out photosphere, is arranged on described the first semiconductor layer and comprises a hole; And a transparency conducting layer, be arranged at described extension and go out on photosphere;
One first electrode, is arranged at described the first semiconductor layer and is arranged in described hole; And
One second electrode, is arranged on described transparency conducting layer.
One of technical scheme that method for manufacturing light-emitting of the present invention adopts is,
Get a substrate;
Form one first semiconductor layer on described substrate;
Form an extension and go out photosphere on described the first semiconductor layer, and described in etching, extension goes out photosphere and forms a hole, the cross section of the sidewall of described hole is an inclined-plane;
Forming a transparency conducting layer goes out on photosphere in described extension;
Form one first electrode in described hole, and be positioned on described the first semiconductor layer; And
Form one second electrode, be arranged on described transparency conducting layer.
Two of the technical scheme that method for manufacturing light-emitting of the present invention adopts is,
Get a substrate;
Form one first photon crystal structure on described substrate;
Form one first semiconductor layer on described photon crystal structure;
Form an extension and go out photosphere on described the first semiconductor layer, and described in etching, extension goes out photosphere and forms a hole;
Forming a transparency conducting layer goes out on photosphere in described extension;
Form one first electrode in described hole, and be positioned on described the first semiconductor layer; And
Form one second electrode on described transparency conducting layer.
Adopt after light-emitting diode provided by the invention and manufacture method thereof, described extension goes out photosphere and is provided with hole, can expose portion the first semiconductor layer,
The first electrode is set in described hole, makes the first electrode be gone out photosphere by extension and surround, can effectively increase the light-emitting area of described light-conducting type light-emitting diode, the voltage while reducing described light-emitting diode operation, effectively promotes the luminous efficiency of described light-emitting diode.
Accompanying drawing explanation
Below in conjunction with accompanying drawing and embodiment, the present invention is further detailed explanation:
Fig. 1 is existing light emitting diode construction schematic diagram;
Fig. 2 A is the structural representation of light-emitting diode embodiment mono-of the present invention;
Fig. 2 B is the manufacturing process schematic diagram of the light-emitting diode shown in Fig. 2 A;
Fig. 3 is the structural representation of light-emitting diode embodiment bis-of the present invention;
Fig. 4 is the structural representation of light-emitting diode embodiment tri-of the present invention;
Fig. 5 A is the structural representation of light-emitting diode embodiment tetra-of the present invention;
Fig. 5 B is the manufacturing process schematic diagram of the light-emitting diode shown in Fig. 5 A;
Fig. 6 A is the structural representation of light-emitting diode embodiment five of the present invention;
Fig. 6 B is the manufacturing process schematic diagram of the light-emitting diode shown in Fig. 6 A;
Fig. 7 A is the structural representation of light-emitting diode embodiment six of the present invention;
Fig. 7 B is the manufacturing process schematic diagram of the light-emitting diode shown in Fig. 7 A;
Fig. 8 A is the structural representation of light-emitting diode embodiment seven of the present invention;
Fig. 8 B is the manufacturing process schematic diagram of the light-emitting diode shown in Fig. 8 A;
Fig. 9 A is the structural representation of light-emitting diode embodiment eight of the present invention;
Fig. 9 B is the manufacturing process schematic diagram of the light-emitting diode shown in Fig. 9 A;
Figure 10 A is the structural representation of light-emitting diode embodiment nine of the present invention;
Figure 10 B is the manufacturing process schematic diagram of the light-emitting diode shown in Figure 10 A;
Figure 11 A is the structural representation of light-emitting diode embodiment ten of the present invention;
Figure 11 B is the manufacturing process schematic diagram of the light-emitting diode shown in Figure 11 A;
Figure 12 A is the structural representation of light-emitting diode embodiment 11 of the present invention;
Figure 12 B is the manufacturing process schematic diagram of the light-emitting diode shown in Figure 12 A;
Figure 13 is the structural representation of light-emitting diode embodiment 12 of the present invention;
Figure 14 is the structural representation of light-emitting diode embodiment 13 of the present invention;
Figure 15 A is the structural representation of light-emitting diode embodiment 14 of the present invention;
Figure 15 B is the manufacturing process schematic diagram of the light-emitting diode shown in Figure 15 A;
Figure 16 A is the structural representation of light-emitting diode embodiment 15 of the present invention;
Figure 16 B is the manufacturing process schematic diagram of the light-emitting diode shown in Figure 16 A;
Figure 17 A is the structural representation of light-emitting diode embodiment 16 of the present invention;
Figure 17 B is the manufacturing process schematic diagram of the light-emitting diode shown in Figure 17 A;
Figure 18 A is the structural representation of light-emitting diode embodiment 17 of the present invention;
The manufacturing process schematic diagram of the light-emitting diode shown in Figure 18 B Figure 18 A;
Figure 19 is embodiment mono-generalized section of micro-structural in the present invention;
Figure 20 is embodiment bis-generalized sections of micro-structural in the present invention.
Symbol description in figure:
1 ' is light-emitting diode; 10 ' is substrate; 11 ' is n type semiconductor layer;
12 ' is luminescent layer; 14 ' is p type semiconductor layer; 15 ' is transparency conducting layer;
16 ' is N-type electrode; 17 ' is P type electrode;
1 is light-emitting diode; 10 is substrate;
11 is the first semiconductor layer; 12 go out photosphere for extension; 120 is hole;
1201 is inclined-plane; 121 is luminescent layer; 122 is the first woven structure;
123 is the second semiconductor layer; 124 is the second woven structure;
125 is groove; 13 is the first photon crystal structure;
14 is photon crystal structure; 15 is transparency conducting layer; 16 is the first electrode;
17 is the second electrode; 18 is the first current blocking layer;
19 is the second current blocking layer; 201 is micro-structural;
20 is the second photon crystal structure; 2011 is the first horizontal line;
2013 is the second horizontal line; 2015 is straight line; 2017 is camber line;
22 is protective layer; 2 is horizontal plane; 3 is angle.
Embodiment
Embodiment mono-.Referring to Fig. 2 A, light-emitting diode 1 of the present invention comprises a substrate 10, one first semiconductor layer 11, an extension and goes out photosphere 12, a transparency conducting layer 15, one first electrode 16 and one second electrode 17.Described the first semiconductor layer 11 is arranged on substrate 10, and described extension goes out photosphere 12 and is arranged on described the first semiconductor layer 11, and described extension goes out photosphere 12 and comprises a hole 120, and the diameter of described hole 120 is greater than the diameter of the first electrode 16.Described the first electrode 16 is arranged on the first semiconductive layer 11, and is positioned at described hole 120.Described transparency conducting layer 15 is arranged at described extension and goes out photosphere 12, and described the second electrode 17 is arranged on described transparency conducting layer 15, and described extension goes out photosphere 12 and comprises a luminescent layer 121 and one second semiconductor layer 123.Described luminescent layer 121 is arranged on described the first semiconductor layer 11, and described the second semiconductor 123 is arranged on described luminescent layer 121.From Fig. 2 A and Fig. 1 relatively, described in the present invention, the second semiconductor layer 123 is with respect to existing p type semiconductor layer 15 ', its area is large compared with the area of p type semiconductor layer 15 ', therefore increased the light-emitting area of described light-emitting diode 1, reduce the voltage while operation, can effectively promote the luminous efficiency of light-emitting diode 1.
Referring to Fig. 2 B, the manufacture method of the light-emitting diode 1 of embodiment mono-is:
First perform step S10, get described substrate 10; Then perform step S11, form the first semiconductor layer 11 on described substrate 10; Perform step again S12, form described extension and go out photosphere 12 on the first semiconductor layer 11; Then perform step S14, extension goes out photosphere 12 described in etching, goes out photosphere 12 form hole 120 in described extension, described the first semiconductor layer 11 parts are exposed, and the diameter of described hole 120 is greater than the diameter of the first electrode 16; Execution step S16, forms the first electrode 16 in described extension goes out the hole 120 of photosphere 12; Perform step again S17, form transparency conducting layer 15 in going out on photosphere 12 through etched described extension; Finally perform step S18, form the second electrode 17 on described transparency conducting layer 15.Wherein, when execution step S12, first perform step S121, form luminescent layer 121 on described the first semiconductor layer 11, then perform step S123, form the second semiconductor layer 123 on described luminescent layer 121.
Embodiment bis-.As shown in Figure 3, the embodiment difference of the present embodiment and Fig. 2 A is, the cross section of the sidewall of described hole 120 is an inclined-plane 1201, the angle 3 of described inclined-plane 1201 and a horizontal plane 2 between 35 degree and 160 degree between and form a light guide structure, the light that can make light-emitting diode 1 send is like this easy to conduct to outside, and the light that effectively promotes light-emitting diode 1 takes out efficiency.
Embodiment tri-.As shown in Figure 4, the embodiment difference of the present embodiment and Fig. 3 is, a protective layer 22 is set on the sidewall of described hole 120, and to prevent that described the first electrode 16 from going out photosphere 12 with extension and contacting, phenomenon is short-circuited.
Embodiment tetra-.As shown in Figure 5A, the embodiment difference of the present embodiment and Fig. 3 is, the surrounding of described the first semiconductor layer 11 arranges one first woven structure 122 and forms a light guide structure, can control like this direction of the light that light-emitting diode 1 sends.And the manufacture method of the present embodiment (referring to Fig. 5 B) is with the manufacture method difference that the embodiment of Fig. 2 B provides, when after execution step S14, execution step S151, forms the first woven structure 122 in the first semiconductor layer 11 around.
Embodiment five.As shown in Figure 6A, the embodiment difference of the present embodiment and Fig. 3 is, the surrounding that described extension goes out photosphere 12 arranges one first woven structure 122 and forms a light guide structure, can control like this direction of the light that described light-emitting diode 1 sends.And the manufacture method of the present embodiment (referring to Fig. 6 B) is with the manufacture method difference that the embodiment of Fig. 2 B provides, when after execution step S14, execution step S152, forms the first woven structure 122 and goes out photosphere 12 around in extension.
Embodiment six.As shown in Figure 7 A, the embodiment difference of the present embodiment and Fig. 3 is, described extension goes out that photosphere 12 surfaces arrange one second woven structure 124 and forms a light guide structure, can control like this direction of the light that described light-emitting diode 1 sends.And the manufacture method of the present embodiment (referring to Fig. 7 B) is with the manufacture method difference that the embodiment of Fig. 2 B provides, when after execution step S14, execution step S153, the surface that goes out photosphere 12 in extension forms the second woven structure 124.
Embodiment seven.As shown in Figure 8 A, the embodiment difference of the present embodiment and Fig. 3 is, the surrounding that described the first semiconductor layer 11 and described extension go out photosphere 12 is provided with one first current blocking layer 18, and described the first current blocking layer 18 is positioned on described substrate, can prevent that like this light-emitting diode 1 from leaking electricity.And the manufacture method of the present embodiment (referring to Fig. 8 B) is with the manufacture method difference that the embodiment of Fig. 2 B provides, after execution step S18, execution step S19, forms described the first current blocking layer 18 and goes out photosphere 12 around in the first semiconductor layer 11 and extension.
Embodiment eight.As shown in Figure 9 A, the embodiment difference of the present embodiment and Fig. 3 is, described extension goes out photosphere 12 and is provided with a groove 125, and is provided with one second current blocking layer 19 in described groove 125, can prevent that like this light-emitting diode 1 from leaking electricity.And the manufacture method of the present embodiment (referring to Fig. 9 B) is with the manufacture method difference that the embodiment of Fig. 2 B provides, execution step S141, described in etching, extension goes out photosphere 12, form hole 120 except go out photosphere 12 in described extension, also form groove 125 and go out on photosphere 12 in described extension, and form described the second current blocking layer 19 in described groove 125.
Embodiment nine.As shown in Figure 10 A, the embodiment difference of the present embodiment and Fig. 3 is, described the first semiconductor layer 11 is provided with a photon crystal structure 14 with the surrounding that extension goes out photosphere 12, and described photon crystal structure 14 is positioned on described substrate 10, and the light that can promote light-emitting diode 1 takes out efficiency.And the manufacture method of the present embodiment (referring to Figure 10 B) is with the manufacture method difference that the embodiment of Fig. 2 B provides, after execution step S18, execution step S20, form described photon crystal structure 14 and go out photosphere 12 around in the first semiconductor layer 11 and extension, and be positioned on described substrate 10.
Embodiment ten.As shown in Figure 11 A, the embodiment difference of the present embodiment and Fig. 3 is, the surrounding that described extension goes out photosphere 12 is provided with a photon crystal structure 14, and described photon crystal structure 14 is positioned on described the first semiconductor layer 11, and the light that can promote light-emitting diode 1 takes out efficiency.And the manufacture method of the present embodiment (referring to Figure 11 B) is with the manufacture method difference that the embodiment of Fig. 2 B provides, after execution step S18, execution step S21, forms described photon crystal structure 14 and goes out photosphere 12 around in described extension, and be positioned on described the first semiconductor layer 11.
Embodiment 11.As shown in Figure 12 A, the embodiment difference of the present embodiment and Fig. 3 is, the surrounding of described the first semiconductor layer 11 is provided with a photon crystal structure 14, and described photon crystal structure 14 is positioned on described substrate 10, and the light that can promote described light-emitting diode 1 takes out efficiency.
And the manufacture method of the present embodiment (referring to Figure 12 B) is with the manufacture method difference that the embodiment of Fig. 2 B provides, after execution step S18, execution step S22, forms described photon crystal structure 14 in described the first semiconductor layer 11 around, and is positioned on described substrate 10.
Embodiment 12.As shown in figure 13, the present embodiment combines the second woven structure 124 shown in the first current blocking layer 18 shown in Fig. 8 A and Fig. 7 A.The surface that described extension goes out photosphere 12 arranges the second woven structure 124, and in the surrounding that described extension goes out photosphere 12 and the first semiconductor layer 11, the first current blocking layer 18 is set.
Embodiment 13.As shown in figure 14, the present embodiment combines the cross section of the sidewall of the second woven structure 124 shown in the first current blocking layer 18 shown in Fig. 8 A, Fig. 7 A and the hole 120 shown in Fig. 3 (for inclined-plane 1201).The surface that described extension goes out photosphere 12 arranges the second woven structure 124, and etching extension goes out photosphere 12 and form hole 120, and the cross section of the sidewall of described hole 120 is inclined-plane 1201.The angle of described inclined-plane 1201 and horizontal plane 2, between 35 degree and 160 degree, and arranges the first current blocking layer 18 in the surrounding that described extension goes out photosphere 12 and the first semiconductor layer 11.From the present embodiment, can be by the protective layer arranging on the sidewall of described hole 120 22 shown in Fig. 4, the first woven structure 122 of the surrounding that is arranged at the first semiconductor layer 11 shown in Fig. 5 A, being arranged at extension and going out the first woven structure 122 of the surrounding of photosphere 12 shown in Fig. 6 A, the the second surperficial woven structure 124 that is arranged at extension and goes out photosphere 12 shown in Fig. 7 A, the first current blocking layer 18 shown in Fig. 8 A, the second current blocking layer 19 or Figure 10 A shown in Fig. 9 A, photon crystal structure 14 shown in Figure 11 A and Figure 12 A is applied to light-emitting diode embodiment illustrated in fig. 3, form a new light-emitting diode 1, and there is good light and takes out the characteristic of efficiency, above-mentioned application mode does not repeat them here.
Embodiment 14.As shown in Figure 15 A, the light-emitting diode 1 of the present embodiment comprises a substrate 10, one first photon crystal structure 13, one first semiconductor layer 11, an extension and goes out photosphere 12, a transparency conducting layer 15, one first electrode 16 and one second electrode 17.Described the first photon crystal structure 13 is arranged on described substrate 10, and described the first semiconductor layer 11 is arranged on described the first photon crystal structure 13, and described extension goes out photosphere 12 and is arranged on described the first semiconductor layer 11.Described extension goes out photosphere 12 and comprises a hole 120, and the diameter of described hole 120 is greater than the diameter of the first electrode 16.Described the first electrode 16 is arranged on the first semiconductive layer 11, and is positioned at described hole 120.Described transparency conducting layer 15 is arranged at extension and goes out on photosphere 12, and described the second electrode 17 is arranged on transparency conducting layer 15.Described extension goes out photosphere 12 and comprises a luminescent layer 121 and one second semiconductor layer 123, and described luminescent layer 121 is arranged on the first semiconductor layer 11, and described the second semiconductor 123 is arranged on luminescent layer 121.Described the first photon crystal structure is column.The embodiment difference of the present embodiment and Fig. 2 A is, described substrate 10 is provided with the first photon crystal structure 13, described the first photon crystal structure 13 comprises plural column structure (as shown in Figure 15 C, its bend part is solid section), or described the first photon crystal structure 13 is a loose structure (as shown in Figure 15 D, its bend part is solid section).Described the first photon crystal structure 13 has an optical energy gap, photon energy within the scope of described optical energy gap penetrates the first photon crystal structure 13, to be spread out of by the first photon crystal structure 13 reflections at the extraneous photon of described optical energy gap, take out efficiency with the light that promotes light-emitting diode 1.And the manufacture method of the present embodiment (referring to Figure 15 B) is with the manufacture method difference that the embodiment of Fig. 2 B provides, after execution step S10, execution step S13, forms described the first photon crystal structure 13 on described substrate 10.Can be inclined-plane 1201 by the sidewall of hole 120 shown in described in Fig. 3 in addition, shown in Fig. 4 protective layer 22 is set on the sidewall of described hole 120, the first woven structure 122 of the surrounding that is arranged at the first semiconductor layer 11 shown in Fig. 5 A, being arranged at extension and going out the first woven structure 122 of the surrounding of photosphere 12 shown in Fig. 6 A, the the second surperficial woven structure 124 that is arranged at extension and goes out photosphere 12 shown in Fig. 7 A, the first current blocking layer 18 shown in Fig. 8 A, the second current blocking layer 19 or Figure 10 A shown in Fig. 9 A, photon crystal structure 14 shown in Figure 11 A and Figure 12 A is applied in the present embodiment, form a new light-emitting diode 1, and there is good light and takes out the characteristic of efficiency, its application mode does not repeat them here.
Embodiment 15.As shown in Figure 16 A, the embodiment difference of the present embodiment and Figure 15 A is, described the first semiconductor layer 11 is provided with one second photon crystal structure 20 with the surrounding that extension goes out photosphere 12, described the second photon crystal structure 20 is positioned on the first photon crystal structure 13, and the light that can promote light-emitting diode 1 takes out efficiency.And the manufacture method of the present embodiment (referring to Figure 16 B) is with the manufacture method difference that the embodiment of Figure 15 B provides, after execution step S18, execution step S20, form the second photon crystal structure 20 and go out photosphere 12 around in the first semiconductor layer 11 and extension, and be positioned on described the first photon crystal structure 13.
Embodiment 16.As shown in Figure 17 A, the embodiment difference of the present embodiment and Figure 15 A is, the surrounding that described extension goes out photosphere 12 is provided with one second photon crystal structure 20, and described the second photon crystal structure 20 is positioned on the first semiconductor layer 11, and the light that can promote light-emitting diode 1 takes out efficiency.And the manufacture method of the present embodiment (referring to Figure 17 B) is with the manufacture method difference that the embodiment of Figure 15 B provides, after execution step S18, execution step S21, forms described the second photon crystal structure 20 and goes out photosphere 12 around in extension, and be positioned on described the first semiconductor layer 11.
Embodiment 17.As shown in Figure 18 A, the embodiment difference of the present embodiment and Figure 15 A is, the surrounding of described the first semiconductor layer 11 is provided with one second photon crystal structure 20, and described the second photon crystal structure 20 is positioned on the first photon crystal structure 13, and the light that can promote light-emitting diode 1 takes out efficiency.And the manufacture method of the present embodiment (referring to Figure 18 B) is with the manufacture method difference that the embodiment of Figure 15 B provides, after execution step S18, execution step S22, form described the second photon crystal structure 20 in the first semiconductor layer 11 around, and be positioned on described the first photon crystal structure 13.
Referring to Figure 19, the generalized section of micro-structural embodiment mono-of the present invention.As shown in the figure, the photon crystal structure 14 shown in Figure 10 A, Figure 11 A and Figure 12 A, comprises respectively plural micro-structural 201 with the second photon crystal structure 20 shown in Figure 16 A, Figure 17 A and Figure 18 A.The cross section of each micro-structural 201 comprises one first horizontal line 2011 and one second horizontal line 2013.One end of described the first horizontal line 2011 is connected with a straight line 2015 with one end of corresponding described the second horizontal line 2013.The angle of described straight line 2015 and the second horizontal line 2013 is between 35 degree and 160 degree, and the cross section of each micro-structural 201 can be rectangle, trapezoidal, inverted trapezoidal or triangle like this.Wherein, the cross section of each micro-structural 201 can be rectangle.Described micro-structural 201 is a column structure, and described the second photon crystal structure 20 is also identical with described the first photon crystal structure 13, and described the second photon crystal structure 20 comprises plural column structure.
Again referring to Figure 20, the generalized section of micro-structural embodiment bis-of the present invention.As shown in the figure, the photon crystal structure 14 shown in Figure 10 A, Figure 11 A and Figure 12 A, comprises respectively plural micro-structural 201 with the second photon crystal structure 20 shown in Figure 16 A, Figure 17 A and Figure 18 A.The cross section of each micro-structural 201 comprises one first horizontal line 2011 and one second horizontal line 2013.One end of described the first horizontal line 2011 is connected with a camber line 2017 with one end of corresponding described the second horizontal line 2013.The angle of described camber line and described the second horizontal line 2013 is between 35 degree and 160 degree.When the angle of described camber line 2017 and described the second horizontal line 2013 more hour, the length of described the first horizontal line 2011 is more and more less, and then described micro-structural 201 is one hemispherical (referring to Figure 20 E); When described camber line 2017 is with described the second horizontal line 2013 angles when larger, the length of described the first horizontal line 2011 is long compared with the length of the second horizontal line 2013.
Known by the above, described the second semiconductor layer is covered with on described luminescent layer; Extension goes out photosphere and includes hole, the first semiconductor layer of expose portion, and described the first electrode is set in described hole, make the first electrode be gone out photosphere by extension and surround.Because the second semiconductor layer is large compared with the area of traditional p type semiconductor layer, can effectively increase the light-emitting area of described light-emitting diode, the voltage while reducing light-emitting diode operation, effectively promotes the luminous efficiency of light-emitting diode; The cross section that woven structure, extension go out the sidewall of the hole of photosphere is set in addition and is inclined-plane or photon crystal structure is set, take out efficiency with the light of promoting light-emitting diode; The first current blocking layer or the second current blocking layer are also set in described light-emitting diode, in case leak-stopping electricity.
More than, by embodiment, the present invention is had been described in detail, but these are not construed as limiting the invention.Without departing from the principles of the present invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (27)
1. a light-emitting diode, is characterized in that, comprising:
Substrate;
The first semiconductor layer, is arranged on described substrate;
Extension goes out photosphere, is arranged on described the first semiconductor layer, and comprises luminescent layer and the second semiconductor layer, and described luminescent layer is arranged on described the first semiconductor layer, and described the second semiconductor is arranged on described luminescent layer;
Transparency conducting layer, is arranged at described extension and goes out on photosphere; And
The second electrode, is arranged on described transparency conducting layer;
Wherein, described extension goes out photosphere and more comprises a hole, and described the first semiconductor layer part is exposed; The first electrode is arranged on described the first semiconductor layer, and is positioned at described hole, makes the first electrode be gone out photosphere by extension and surrounds.
2. light-emitting diode as claimed in claim 1, is characterized in that, the cross section of the sidewall of described hole is an inclined-plane.
3. light-emitting diode as claimed in claim 1, is characterized in that: also comprises,
The first current blocking layer, is arranged at described the first semiconductor layer and described extension and goes out photosphere around, and be positioned on described substrate.
4. light-emitting diode as claimed in claim 2, is characterized in that: the angle of described inclined-plane and a horizontal plane is between 35 degree to 160 degree.
5. light-emitting diode as claimed in claim 1, is characterized in that: the diameter of described hole is greater than the diameter of described the first electrode.
6. light-emitting diode as claimed in claim 1, is characterized in that: the sidewall of described hole is also provided with a protective layer.
7. light-emitting diode as claimed in claim 1, is characterized in that: described extension goes out photosphere and also comprises a groove, and one second current blocking layer is set in described groove.
8. light-emitting diode as claimed in claim 1, is characterized in that: also comprise that the first woven structure is arranged at described the first semiconductor layer around.
9. light-emitting diode as claimed in claim 1, is characterized in that: also comprise that the first woven structure is arranged at described extension and goes out photosphere around.
10. light-emitting diode as claimed in claim 1, is characterized in that: also comprise, the second woven structure, is arranged at described transparency conducting layer and described extension goes out between photosphere.
11. light-emitting diodes as claimed in claim 1, is characterized in that: also comprise that photon crystal structure is arranged at described the first semiconductor layer around, and is positioned on described substrate.
12. light-emitting diodes as claimed in claim 1, is characterized in that: also comprise, photon crystal structure, is arranged at described extension and goes out photosphere around, and is positioned on described the first semiconductor layer.
13. light-emitting diodes as described in claim 11 or 12, is characterized in that: described photon crystal structure comprises plural column structure.
14. light-emitting diodes as described in claim 11 or 12, it is characterized in that: on described photon crystal structure, also comprise plural micro-structural, the cross section of each micro-structural comprises one first horizontal line and one second horizontal line, described first horizontal one end is connected with a straight line with corresponding described second horizontal one end, and described straight line and described the second horizontal angle are between 35 degree to 160 degree.
15. light-emitting diodes as described in claim 11 or 12, it is characterized in that: on described photon crystal structure, also comprise plural micro-structural, the cross section of each micro-structural comprises one first horizontal line and one second horizontal line, described first horizontal one end is connected with a camber line with corresponding described second horizontal one end, and described camber line and described horizontal angle are between 35 degree to 160 degree.
The manufacture method of 16. 1 kinds of light-emitting diodes, is characterized in that: comprises the steps,
Get a substrate;
Form one first semiconductor layer on described substrate;
Form an extension and go out photosphere on described the first semiconductor layer, and described in etching, extension goes out photosphere and forms a hole, described the first semiconductor layer part is exposed;
Forming a transparency conducting layer goes out on photosphere in described extension;
Form one first electrode in described hole, and be positioned on described the first semiconductor layer, make the first electrode be gone out photosphere by extension and surround; And
Form one second electrode, be arranged on described transparency conducting layer.
17. manufacture methods as claimed in claim 16, is characterized in that: form the step that described extension goes out photosphere and comprise:
Form a luminescent layer on described the first semiconductor layer; And
Form one second semiconductor layer on described luminescent layer.
18. manufacture methods as claimed in claim 16, is characterized in that: also comprise, form one first current blocking layer and go out photosphere around in described the first semiconductor layer and described extension.
19. manufacture methods as claimed in claim 16, is characterized in that: the cross section of the sidewall of described hole is an inclined-plane, and the angle of described inclined-plane and a horizontal plane is between 35 degree and 160 degree.
20. manufacture methods as claimed in claim 16, is characterized in that: the diameter of described hole is greater than the diameter of described the first electrode.
21. manufacture methods as claimed in claim 16, is characterized in that: the step that described in etching, extension goes out photosphere also comprises,
Form a groove; And
Form one second current blocking layer in described groove.
22. manufacture methods as claimed in claim 16, is characterized in that: form after the step of described the first semiconductor layer and also comprise and form one first woven structure in described the first semiconductor layer around.
23. manufacture methods as claimed in claim 16, is characterized in that: described in etching, extension also comprises that forming one first woven structure goes out photosphere around in described extension after going out the step of photosphere.
24. manufacture methods as claimed in claim 16, is characterized in that: after forming the step that described extension goes out photosphere, also comprise that forming one second woven structure goes out photosphere in described extension.
25. manufacture methods as claimed in claim 16, is characterized in that: also comprise, form a photon crystal structure and go out photosphere around in described the first semiconductor layer and described extension, described photon crystal structure is positioned on described substrate.
26. manufacture methods as claimed in claim 16, is characterized in that: also comprise, form a photon crystal structure in described the first semiconductor layer around, described photon crystal structure is positioned on described substrate.
27. manufacture methods as claimed in claim 16, is characterized in that: also comprise, form a photon crystal structure and go out photosphere around in described extension, described photon crystal structure is positioned on described the first semiconductor layer.
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| CN200910131542.1A CN101859836B (en) | 2009-04-07 | 2009-04-07 | Light-conducting type light-emitting diode and manufacturing method thereof |
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| CN200910131542.1A CN101859836B (en) | 2009-04-07 | 2009-04-07 | Light-conducting type light-emitting diode and manufacturing method thereof |
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| Publication Number | Publication Date |
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| CN101859836A CN101859836A (en) | 2010-10-13 |
| CN101859836B true CN101859836B (en) | 2014-05-28 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1484328A (en) * | 2002-06-24 | 2004-03-24 | ������������ʽ���� | Semiconductor element and mfg method |
| CN1703784A (en) * | 2002-10-03 | 2005-11-30 | 日亚化学工业株式会社 | Light emitting diode |
| CN1909252A (en) * | 2005-08-01 | 2007-02-07 | 璨圆光电股份有限公司 | Light-emitting diode and its producing method |
| CN101341600A (en) * | 2005-12-26 | 2009-01-07 | 日本电气株式会社 | Semiconductor optical device |
| TW200908379A (en) * | 2007-08-10 | 2009-02-16 | Formosa Epitaxy Inc | Method of manufacturing substrate for light emitting diode |
-
2009
- 2009-04-07 CN CN200910131542.1A patent/CN101859836B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1484328A (en) * | 2002-06-24 | 2004-03-24 | ������������ʽ���� | Semiconductor element and mfg method |
| CN1703784A (en) * | 2002-10-03 | 2005-11-30 | 日亚化学工业株式会社 | Light emitting diode |
| CN1909252A (en) * | 2005-08-01 | 2007-02-07 | 璨圆光电股份有限公司 | Light-emitting diode and its producing method |
| CN101341600A (en) * | 2005-12-26 | 2009-01-07 | 日本电气株式会社 | Semiconductor optical device |
| TW200908379A (en) * | 2007-08-10 | 2009-02-16 | Formosa Epitaxy Inc | Method of manufacturing substrate for light emitting diode |
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