CN114649322B - Micro LED display device and preparation method - Google Patents

Micro LED display device and preparation method Download PDF

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CN114649322B
CN114649322B CN202210552675.1A CN202210552675A CN114649322B CN 114649322 B CN114649322 B CN 114649322B CN 202210552675 A CN202210552675 A CN 202210552675A CN 114649322 B CN114649322 B CN 114649322B
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layer
passivation layer
led
light
display device
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CN114649322A (en
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胡双元
庄永漳
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Laiyu Optoelectronic Technology Suzhou Co ltd
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Laiyu Optoelectronic Technology Suzhou Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

The invention discloses a Micro LED display device and a preparation method thereof, and belongs to the technical field of Micro-LED manufacturing. The Micro LED display chip comprises: a driving panel; LED units individually driven through contacts; a passivation layer on the LED unit, including a first passivation layer, a second passivation layer, and a third passivation layer; and a second light reflecting layer formed on the second passivation layer and the third passivation layer. The manufacturing method comprises providing a driving panel, and forming LED units on the driving panel; forming a passivation layer on the LED unit; forming a light reflecting layer on the passivation layer; and stripping the first reflective layer and reserving the second reflective layer. According to the invention, spontaneous radiation photons are blocked by the reflecting layer and are emitted only from the top, so that crosstalk between adjacent pixels is completely prevented, the photons reflected by the reflecting layer escape from the unique emitting window, and the light emitting power is greatly improved.

Description

Micro LED display device and preparation method
Technical Field
The invention belongs to the technical field of Micro-LED manufacturing, and particularly relates to a Micro LED display device and a preparation method thereof.
Background
Micro LED is used for little display industry (such as AR/VR etc.) because the pixel interval is very little to can cause the problem of crosstalk, that is to say, when the luminous of pixel, have partly to leak to adjacent pixel, lead to the color purity to descend. Some technologies, such as resonant cavity technology, can alleviate the problem of crosstalk to some extent, but because Micro LED emits light which is spontaneous radiation, rather than stimulated radiation as in a laser, a part of the light still leaks from the side wall, thereby causing the problem of crosstalk.
Disclosure of Invention
The purpose of the invention is as follows: the invention aims to provide a Micro LED display device, wherein a reflecting layer is arranged on the side wall of an LED unit, so that crosstalk between adjacent pixels is prevented, and the light emitting power is improved; the invention also aims to provide a preparation method of the Micro LED display device.
The technical scheme is as follows: in order to achieve the above object, a method for manufacturing a Micro LED display device includes:
providing a drive panel comprising a plurality of first contacts;
providing LED units, wherein the LED unit array is arranged on the driving panel and is driven through the first contact individually; the LED unit is provided with a light-emitting surface and a side surface connected with the light-emitting surface;
forming passivation layers on the LED units, wherein the passivation layers comprise a first passivation layer on the light emitting surface, a second passivation layer on the side surface and integrally connected with the first passivation layer, and a third passivation layer between adjacent LED units and integrally connected with the second passivation layer;
a first opening used for exposing the light emitting surface is formed in the first passivation layer;
forming a sacrificial layer, wherein the sacrificial layer is positioned on the first passivation layer and covers the first opening;
forming a light reflecting layer including a first light reflecting layer on the sacrificial layer and a second light reflecting layer on the second passivation layer and the third passivation layer, the first light reflecting layer and the second light reflecting layer being disconnected from each other; and stripping the sacrificial layer, reserving the second light reflecting layer and exposing the first passivation layer and the first opening.
In some embodiments, the step of providing an LED unit comprises:
providing a substrate, wherein an LED epitaxial layer is arranged on the substrate;
bonding the driving panel and the LED epitaxial layer to form a bonding layer between the driving panel and the LED epitaxial layer;
etching the LED epitaxial layer into a step structure, wherein the step structure comprises a first doped semiconductor layer, a second doped semiconductor layer and an active layer positioned between the first doped semiconductor layer and the second doped semiconductor layer; the light emitting surface is positioned on the second doped semiconductor layer and positioned at the top end of the step structure; the step structure at least disconnects and electrically isolates the second doped semiconductor layers of adjacent LED units from each other.
In some embodiments, the step structure electrically isolates the second doped semiconductor layer, the active layer, and the first doped semiconductor layer of the adjacent LED units from each other;
the bonding layer is made of a conductive material, and the bonding layer is etched to disconnect the bonding layers between the adjacent LED units;
the first contact is located below the corresponding LED unit, and the first doped semiconductor layer is electrically connected with the first contact so that the LED unit can be driven independently.
In some embodiments, the step of electrically connecting the first doped semiconductor layer and the first contact to enable the LED units to be driven individually comprises:
disposing an electrode layer on the first passivation layer; the electrode layer is electrically connected with the second doped semiconductor layer of the LED unit through the first opening, and the second doped semiconductor layers of the adjacent LED units are electrically connected through the electrode layer.
In some embodiments, the step of disposing an electrode layer on the first passivation layer is preceded by:
and forming an insulating layer on the first passivation layer and the light reflecting layer, and then arranging a second opening on the insulating layer on the first passivation layer and exposing the first opening.
In some embodiments, the insulating layer acts as an electrically isolating layer, which may be omitted if the light-reflective layer itself is not electrically conductive; the insulating layer material may be an organic material or an inorganic material.
In some embodiments, the step of disposing an electrode layer on the first passivation layer is followed by:
forming a Bragg mirror, the Bragg mirror being located on the electrode layer.
In some embodiments, the reflectivity of the bragg mirror is between 50% -70%. The Bragg reflector is used for improving the light-emitting collimation, and when the bottom layer of the LED unit is provided with the reflective metal, the reflectivity of the Bragg reflector is further ensured to be smaller than that of the bottom layer reflective metal of the LED unit.
In some embodiments, the step of forming a sacrificial layer comprises:
forming a sacrificial coating on the first opening, the first passivation layer, the second passivation layer, and the third passivation layer;
and carrying out patterned exposure on the sacrificial coating, removing the sacrificial coating on the second passivation layer and the third passivation layer, and reserving the first passivation layer and the sacrificial coating on the first opening to obtain the sacrificial layer.
In some embodiments, the thickness ratio of the sacrificial coating to the light-reflective layer is greater than 2: 1, preferably not less than 3: 1, the thickness of sacrificial coating needs to be far thicker than the thickness of reflector layer, just can guarantee that the first reflector layer and the second reflector layer of follow-up formation are discontinuous structure to can guarantee directly peeling off of first reflector layer, and do not influence the reservation of second reflector layer.
In some embodiments, the sacrificial layer comprises photoresist, SU-8, polyimide, SiO 2 And SiN x Any one of them. The sacrificial layer is made of a material which is convenient to directly strip, and on the other hand, the surface of the first doped semiconductor layer of the LED unit is not damaged in the stripping process.
In some embodiments, the electrode layer is a transparent conductive film. The transparent conductive film can be used as an ohmic contact layer and a light outlet.
In some embodiments, the reflective layer has a reflectivity of greater than 80%. The reflecting layer is a metal reflecting layer, and the metal reflecting layer can be high-reflecting metal such as Al, Ag and the like, and can also be other non-metal high-reflecting medium materials.
In some embodiments, a Micro LED display device, comprising:
a driving panel including a plurality of first contacts;
a plurality of LED units arranged in an array on the driving panel and individually driven through the first contacts;
the LED unit is provided with a light emitting surface and a side surface connected with the light emitting surface;
the passivation layer comprises a first passivation layer positioned on the light emitting surface, a second passivation layer positioned on the side surface and integrally connected with the first passivation layer, and a third passivation layer positioned between the adjacent LED units and integrally connected with the second passivation layer;
and a second light reflecting layer on the second passivation layer and the third passivation layer.
In some embodiments, the light reflecting layer is formed only on the second passivation layer and the third passivation layer; the light reflecting layer is not in contact with the first passivation layer.
In some embodiments, the active layer may be a multiple quantum well structure, and is configured to confine electron and hole carriers to the quantum well region, and when the electron and the hole recombine, the carriers emit photons after radiative recombination, so as to convert electrical energy into light energy.
In some embodiments, the side faces are inclined or perpendicular with respect to the light exit face.
In some embodiments, the first and second doped semiconductor layers may include one or more layers based on II-VI materials such as ZnSe or ZnO or III-V materials such as GaN, AlN, InN, InGaN, GaP, AlInGaP, AlGaAs, and alloys thereof.
In some embodiments, a bonding layer is included, the bonding layer being located between the driving panel and the LED unit;
the LED unit comprises a step structure formed by etching the LED epitaxial layer; the step structure comprises a first doped semiconductor layer, a second doped semiconductor layer and an active layer positioned between the first doped semiconductor layer and the second doped semiconductor layer, and the light emitting surface is positioned on the second doped semiconductor layer and positioned at the top end of the step structure; the stepped structure electrically isolates and disconnects at least the second doped semiconductor layers of adjacent LED units from each other,
in some embodiments, the step structure also disconnects and electrically isolates the first doped semiconductor layer, the active layer between adjacent LED cells from each other;
the first contacts are located below the corresponding LED units and electrically connected with the corresponding first doped semiconductor layers.
In some embodiments, the bonding layer is used for bonding the LED unit and the driving circuit, and the bonding manner includes adhesive bonding, metal-to-metal bonding, metal oxide bonding, wafer-to-wafer bonding, and the like.
In some embodiments, an electrode layer is included, the electrode layer being on the first passivation layer;
the electrode layer is electrically connected with the second doped semiconductor layer through the first opening, and the second doped semiconductor layers of the adjacent LED units are electrically connected through the electrode layer.
In some embodiments, further comprising an insulating layer on the first passivation layer and the light reflecting layer;
the insulating layer is provided with a second opening which exposes the first opening, and the electrode layer is in contact with the insulating layer through the second opening.
In some embodiments, a bragg mirror is further included, the bragg mirror being located on the electrode layer.
In some embodiments, the diameter of the second bore is no less than the diameter of the first bore.
In some embodiments, the driving panel is a silicon-based CMOS driving board or a thin film field effect transistor driving board.
In some embodiments, the LED unit has a size of 0.1 to 5 micrometers.
In some embodiments, the thickness of the passivation layer sidewall is one quarter of the emission wavelength of the LED cell, and the thickness δ of the passivation layer sidewall satisfies the following formula: δ = λ/(4 × n);
where λ is an emission wavelength of the LED unit, and n represents a refractive index of the passivation layer.
Has the advantages that: compared with the prior art, the preparation method of the Micro LED display device comprises the following steps: providing a driving panel, wherein the driving panel comprises a plurality of first contacts; providing LED units, wherein the LED unit array is arranged on the driving panel and is driven independently through a first contact; the LED unit comprises a light-emitting surface and a side surface connected with the light-emitting surface; forming a passivation layer, wherein the passivation layer is positioned on the LED units and comprises a first passivation layer positioned on the light emitting surface, a second passivation layer positioned on the side surface and integrally connected with the first passivation layer, and a third passivation layer positioned between the adjacent LED units and integrally connected with the second passivation layer; providing a first opening for exposing the second doped semiconductor layer on the first passivation layer; forming a sacrificial layer, wherein the sacrificial layer is positioned on the first passivation layer and covers the first opening; forming a light reflecting layer comprising a first light reflecting layer on the sacrificial layer and a second light reflecting layer on the second passivation layer and the third passivation layer, wherein the first light reflecting layer and the second light reflecting layer are disconnected; and stripping the sacrificial layer, reserving the second light reflecting layer, and exposing the first passivation layer and the first opening. According to the preparation method, the sacrificial layer is firstly deposited, then the reflective layer is deposited, and finally the sacrificial layer is removed, so that the reflective layer is ingeniously formed on the side face of the corresponding LED unit, and the reflective layer is ensured to be of a discontinuous structure after deposition due to the fact that the sacrificial layer has a certain thickness, so that the reflective layer on the sacrificial layer can be stripped along with the sacrificial layer, the whole process is simple, the step of etching the reflective layer with high reflectivity is directly omitted, the time for preparing the reflective layer on the Micro LED display device with the Micro-size structure is greatly shortened, the surface of the LED unit cannot be damaged, and the yield of the Micro LED display device is improved. According to the LED unit, the light reflecting layer is formed by adopting a lift off stripping process, so that the cost is reduced, and meanwhile, the effect of blocking spontaneous radiation photons in the LED unit can be achieved.
The Micro LED display device of the invention comprises: a driving panel including a plurality of first contacts; the LED unit array is arranged on the driving panel and is driven independently through the first contact; the LED unit is provided with a light-emitting surface and a side surface connected with the light-emitting surface; the passivation layer comprises a first passivation layer positioned on the light emitting surface, a second passivation layer positioned on the side surface and integrally connected with the first passivation layer, and a third passivation layer positioned between the adjacent LED units and integrally connected with the second passivation layer; and a second light reflecting layer on the second passivation layer and the third passivation layer. In the Micro LED display device, the second reflecting layer is arranged to block spontaneous radiation photons excited by the active layer, and the spontaneous radiation photons cannot escape from the side surface of the LED unit and only exit from the top because the second reflecting layer is arranged on the side surface of the LED unit, so that crosstalk between adjacent pixels can be completely prevented; photons reflected by the second reflecting layer are reflected for multiple times in the LED unit and escape from the unique exit window, so that the light output power of the Micro LED display device is greatly improved.
The Micro LED display device further comprises an insulating layer, wherein the insulating layer is located on the first passivation layer and the second reflection layer; the insulating layer can prevent the contact between the reflecting layer made of metal and the electrode layer on the one hand, the loss of electromagnetic waves is small, and on the other hand, the heat generated by the LED unit can be conducted, so that the service life of the LED unit is prolonged, and the power output is improved.
Drawings
The technical solution and other advantages of the present invention will become apparent from the following detailed description of specific embodiments of the present invention, which is to be read in connection with the accompanying drawings.
FIG. 1 illustrates a top view of a Micro LED display device according to some embodiments of the present application;
FIG. 2 shows a schematic cross-sectional view in the A-A' direction of a Micro LED display device according to some embodiments of the present application;
FIG. 3 illustrates a schematic cross-sectional view along the A-A' direction of a substrate according to some embodiments of the present application;
FIG. 4 illustrates an A-A' direction cross-sectional schematic view of a drive panel according to some embodiments of the present application;
FIG. 5 illustrates a bonding layer structure schematic according to some embodiments of the present application;
FIG. 6 illustrates a bonding process schematic according to some embodiments of the present application;
FIG. 7 shows a schematic diagram of the resulting structure after bonding of the LED epitaxial layers to the driver panel according to some embodiments of the present application;
FIG. 8 illustrates a schematic diagram of a MESA etch forming a step structure according to some embodiments of the present application;
FIG. 9 illustrates a schematic diagram of a resulting structure after etching a bonding layer according to some embodiments of the present application;
FIG. 10 illustrates a schematic diagram of the resulting structure after forming a passivation layer according to some embodiments of the present application;
FIG. 11 illustrates a schematic view of a resulting structure of providing a first aperture according to some embodiments of the present application;
FIG. 12 illustrates a schematic view of the resulting structure after forming a sacrificial coating, according to some embodiments of the present application;
FIG. 13 illustrates a schematic diagram of the resulting structure after forming a sacrificial layer, according to some embodiments of the present application;
FIG. 14 illustrates a schematic view of the resulting structure after forming a light-reflective layer according to some embodiments of the present application;
FIG. 15 shows a schematic view of the resulting structure after stripping of the sacrificial layer according to some embodiments of the present application;
FIG. 16 illustrates a schematic diagram of a resulting structure of forming an insulating layer, according to some embodiments of the present application;
FIG. 17 illustrates a schematic view of a resulting structure of providing a second aperture according to some embodiments of the present application;
FIG. 18 shows a schematic view of a resulting structure for forming an electrode layer according to some embodiments of the present application;
FIG. 19 illustrates a schematic diagram of a resulting structure for forming a Bragg mirror in accordance with some embodiments of the present application;
reference numerals: 100-Micro LED display device, 101-driving panel, 102-bonding layer, 103-first contact, 104-passivation layer, 105-reflective layer, 106-insulating layer, 107-electrode layer, 108-bragg mirror, 109-LED unit, 110-second doped semiconductor layer, 111-active layer, 112-first doped semiconductor layer, 113-light-emitting surface, 114-side surface, 115-first opening, 116-sacrificial layer, 117-substrate, 118-LED epitaxial layer, 119-second opening, 1041-first passivation layer, 1042-second passivation layer, 1043-third passivation layer, 1051-first reflective layer, 1052-second reflective layer, 1161-sacrificial coating.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The present disclosure provides many different embodiments or examples for implementing different configurations of the invention. In order to simplify the disclosure of the present invention, the components and arrangements of specific examples are described herein. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
In general, the terminology will be understood at least in part in light of the above usage of the present invention. For example, the term "one or more" as used herein may be used, at least in part, to describe any element, structure or feature in the singular or may be used to describe a combination of elements, structures or features in the plural, depending on the invention. Similarly, terms such as "a," "an," or "the" may also be understood to convey a singular use or to convey a plural use depending, at least in part, on the invention described above. Additionally, the term "… -based" may be understood as not necessarily intended to convey an exclusive set of factors, but may instead allow for the presence of additional factors that are not necessarily explicitly described, depending at least in part on the invention described above.
It should be readily understood that the meaning of "on …", "above …" and "above …" in the present invention should be interpreted in the broadest sense such that "on …" means not only "directly on something", but also "on something" including the presence of an intermediate part or layer therebetween, and "on something" or "above something" means not only the meaning of "on something" or "above something", but also the meaning of "on something" or "above something" without the presence of an intermediate part or layer therebetween.
Furthermore, spatially relative terms, such as "below …," "below …," "lower," "above …," "upper," and the like, may be used herein for ease of description to describe one element or component's relationship to another element or component as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented at 90 ° rotated or at other orientations and the spatially relative descriptors used in the present application may be interpreted accordingly as such.
The term "layer" as used in the present invention refers to a portion of material that includes a region having a thickness. The layer may extend over the entire underlying or overlying structure, or may have a lesser extent than the extent of the underlying or overlying structure. Furthermore, a layer may be a region of a homogeneous or heterogeneous continuous structure having a thickness less than the thickness of the continuous structure. For example, a layer may be located between any pair of horizontal planes between the top and bottom surfaces of a continuous structure or therebetween. The layers may extend horizontally, vertically, and/or along a tapered surface. The substrate may be a layer, may include one or more layers therein, and/or may have one or more layers thereon, above, and/or below. One layer may comprise multiple layers. For example, the semiconductor layer may include one or more doped or undoped semiconductor layers, and may be of the same or different materials.
Fig. 1 shows a top view of a Micro LED display device 100 of some embodiments, and fig. 2 shows a cross-sectional view of the Micro LED display device 100 along a-a' direction in fig. 1. The Micro LED display device 100 includes a driving panel 101 and at least two LED units 109. The LED units 109 are arranged on the driving panel 101 in an array, the LED units 109 are in a step structure, and include a first doped semiconductor layer 112, a second doped semiconductor layer 110, and an active layer 111 located therebetween, a top surface of the step structure is a light emitting surface 113, a side surface 114 is connected to the light emitting surface 113, and the side surface 114 is formed on the second doped semiconductor layer 110; the passivation layer 104 is formed on the LED unit 109 and includes a first passivation layer 1041, a second passivation layer 1042 and a third passivation layer 1043, and the first passivation layer 1041, the second passivation layer 1042 and the third passivation layer 1043 are integrally connected; a second light reflecting layer 1052 is formed on the second passivation layer 1042 and the third passivation layer 1043; an insulating layer 106 is formed on the second light reflecting layer 1052; the electrode layer 107 is formed on the insulating layer 106 and electrically connected to the second doped semiconductor layer 110 of the LED unit 109 through the first opening 115.
In some embodiments, the drive panel 101 may comprise a semiconductor material such as silicon, silicon carbide, nitride, germanium, gallium arsenide, cobalt phosphide. In some embodiments, the drive panel 101 may be made of a non-conductive material, such as glass, plastic, or sapphire wafers. In some embodiments, the driving panel 101 may have a driving circuit formed therein, and the driving panel 101 may be a CMOS backplane or a TFT glass substrate. The driving circuit supplies an electric signal to the LED unit 109 to control the luminance. In some embodiments, the driver circuit may comprise an active matrix driver circuit, wherein each individual LED unit 109 corresponds to a separate driver.
Referring to fig. 2, a bonding layer 102 is disposed between the driving panel 101 and the LED units 109, and the bonding layers 102 between adjacent LED units 109 are disconnected from each other, so that the adjacent LED units 109 cannot be electrically connected through the bonding layer 102; the bonding layer 102 is an adhesive material layer formed on the driving panel 101 to bond the driving panel 101 and the LED unit 109. In some embodiments, bonding layer 102 may include a conductive material, such as a metal or metal alloy. In some embodiments, bonding layer 102 may include Au, Sn, In, Cu, or Ti. In some embodiments, the bonding layer 102 may include a non-conductive material, such as polyimide PI, polydimethylsiloxane PDMS. In some embodiments, bonding layer 102 may comprise a photoresist, such as SU-8 photoresist.
In some embodiments, the step structure disconnects and electrically isolates the second doped semiconductor layers 110 of adjacent LED units 109 from each other, and disconnects and electrically isolates the first doped semiconductor layers 112 between adjacent LED units 109 from each other; the first contact 103 is located under the corresponding LED unit 109, and the first doped semiconductor layer 112 is electrically connected to the first contact 103 so that the LED unit 109 can be driven individually.
In some embodiments, the first doped semiconductor layer 112 may also be a continuous functional layer structure, the first contact 103 is located between the adjacent LED units 109, and the second doped semiconductor layer 110 of the LED units 109 is electrically connected to the corresponding first contact 103, so that the LED units 109 can be driven individually; the second doped semiconductor layer 110 is patterned, or the second doped semiconductor layer 110 is etched to form a mesa structure, or the second doped semiconductor layer 110 is ion-implanted to form the LED unit 109.
In some embodiments, the active layer 111 is formed between the first and second doped semiconductor layers 112 and 110 of each LED unit 109. In some embodiments, the active layer 111 is a multiple quantum well layer MQW, electrons and holes recombine in the quantum well region to generate photons, and spontaneous emission photons excited at the multiple quantum well achieve luminescence.
Referring to fig. 2, the side surface 114 of the LED unit 109 is inclined with respect to the light emitting surface 113, and the inclined angle is determined in the actual process, that is, each LED unit 109 is in a trapezoid structure and forms an array of trapezoid LED units 109, and the trapezoid side wall helps to improve the light emitting efficiency of the LED units 109, mainly because the trapezoid side wall can reflect light and reflect it back to the light extraction side wall.
In some embodiments, the first and second doped semiconductor layers 112 and 110 may include one or more layers based on II-VI materials (such as ZnSe or ZnO) or III-V materials (such as GaN, AlN, InN, InGaN, GaP, AlInGaP, AlGaAs, and alloys thereof).
In some embodiments, a passivation layer 104 is disposed on the LED unit 109. The passivation layer 104 serves to protect and isolate the LED unit 109. In some embodiments of the present invention, the,the passivation layer 104 may comprise SiO 2 、A1 2 O 3 SiN, or other suitable material. In some embodiments, the passivation layer 104 comprises polyimide, SU-8 photoresist, or other photo-patternable polymer.
As shown in fig. 2, the second light reflecting layer 1052 is formed on the second passivation layer 1042 and the third passivation layer 1043, and can reflect light scattered around the active layer 111 in the LED unit 109 and emit the light from the light emitting surface 113. In some embodiments, the second light-reflecting layer 1052 is a metal reflecting layer comprising Ag, Al, or multiple layers of metals. In some embodiments, the second light reflecting layer 1052 includes a bragg reflecting layer. In some embodiments, the reflectivity of the second light reflecting layer 1052 is greater than 80%.
Referring to fig. 2, a first opening 115 is formed on the first passivation layer 1041 exposing the second doped semiconductor layer 110, and an electrode layer 107 is formed on the first passivation layer 1041, the electrode layer 107 being electrically connected to the second doped semiconductor layer 110. In some embodiments, the first aperture 115 is located at the center of each LED unit 109. In some embodiments, the electrode layer 107 may be a transparent conductive film, which serves as an ohmic contact layer and a light outlet.
In some embodiments, when the multiple quantum wells emit light, light leaking from the sidewalls of the chip functional regions is reflected by the second light-reflecting layer 1052, so that only the electrode layer 107 can emit light, and thus no optical crosstalk occurs to the adjacent LED units 109.
Fig. 3 to 19 show schematic diagrams of different stages in the fabrication process of the Micro LED display device 100 structure.
Referring to fig. 3 and 4, a driving panel 101 is provided, a driving circuit is formed in the driving panel 101, and the driving circuit includes a first contact 103; a substrate 117 is provided and LED epitaxial layers 118 are formed on the substrate 117.
In some embodiments, the driving panel 101 is a silicon-based CMOS backplane or a thin film field effect transistor. Silicon-based CMOS silicon-based chips, in some embodiments substrate 117 is a semiconductor material such as silicon, gallium nitride, etc., or substrate 117 is a non-conductive material such as sapphire or glass.
Referring to fig. 5, a bonding layer 102 is formed on the driving panel 101 for bonding the driving panel 101 and the LED epitaxial layers 118 on the substrate 117.
In some embodiments, bonding layer 102 may include a conductive material, such as a metal or metal alloy. In some embodiments, bonding layer 102 may include Au, Sn, In, Cu, or Ti. In some embodiments, the bonding layer 102 may include a non-conductive material, such as polyimide PI, polydimethylsiloxane PDMS. In some embodiments, bonding layer 102 may comprise a photoresist, such as SU-8 photoresist. In some embodiments, bonding layer 102 is formed by deposition.
Referring to fig. 6, the LED epitaxial layers 118 on the substrate 117 are flipped over and passed over and bonded to the driving panel 101, and then the substrate 117 is removed from the LED epitaxial layers 118.
In some embodiments, the bonding layer 102 may include one or more layer structures, and the bonding manner is metal bonding. In some embodiments, substrate 117 removal methods include, but are not limited to, laser lift-off, dry etching, wet etching, mechanical polishing, and the like.
Referring to fig. 7, the inverted LED epitaxial layer 118 is thinned, and the thinning operation includes dry etching, wet etching or mechanical polishing.
Referring to fig. 8, a MESA pattern is designed according to a patterned mask, the LED epitaxial layer 118 is etched to form an LED unit 109, and the LED unit 109 is a functionalized step structure, and includes a first doping type semiconductor layer 112, a second doping type semiconductor layer 110 and an active layer 111.
In some embodiments, the first doped semiconductor layer 112 is P-type gan, the second doped semiconductor layer 110 is N-type gan, and the active layer 111 is a multi-quantum well layer. The etching includes a dry method or a wet method.
In some embodiments, the depth of the second doped semiconductor layer 110 is based on a predefined thickness that the first doped semiconductor layer 112 can reach, and the first doped semiconductor layer 112 remains on the driving panel 101; the stepped structure disconnects and electrically isolates at least the second doped semiconductor layers 110 of the adjacent LED units 109 from each other, and the stepped structure also disconnects and electrically isolates the first doped semiconductor layers 112 of the adjacent LED units 109 from each other.
Referring to fig. 9, adjacent LED units 109 cannot be electrically connected through the bonding layer 102 by etching the bonding layer 102.
In some embodiments, the first contact 103 is located below the corresponding LED unit 109, and the first doped semiconductor layer 112 is electrically connected to the first contact 103 to enable the LED unit 109 to be driven individually.
In some embodiments, since the first doped semiconductor layer 112 is a P-type layer, which has the characteristics of difficult doping and low carrier concentration, before bonding, an ohmic contact layer and a reflective layer are disposed on the first doped semiconductor layer 112, and then metal bonding is performed with the bonding layer 102.
Referring to fig. 10, a passivation layer 104 is formed on the LED unit 109, where the passivation layer 104 includes a first passivation layer 1041, a second passivation layer 1042 and a third passivation layer 1043, and the first passivation layer 1041 is connected to the third passivation layer 1043 through the second passivation layer 1042; the first passivation layer 1041 is formed on the second doped semiconductor layer 110 and located on the light emitting surface 113 of the LED unit 109, and the second passivation layer 1042 is located on the side surface 114 of the LED unit 109; a third passivation layer 1043 is formed between the adjacent LED units 109. The passivation layer 104 may protect the LED unit 109. In some embodiments, the passivation layer 104 is formed by chemical vapor deposition.
In some embodiments, the passivation layer 104 is an inorganic or organic dielectric material that passivates and electrically isolates the LED cells 109.
In some embodiments, the thickness of the sidewall of the passivation layer 104 is one quarter of the light emitting wavelength of the LED unit 109, and the thickness δ of the sidewall of the passivation layer 104 satisfies the following formula: δ = λ/(4 × n); where λ is the emission wavelength of the LED unit 109, and n represents the refractive index of the passivation layer 104.
In some embodiments, the passivation layer 104 sidewalls actually refer to the thickness of the second passivation layer 1042. When the above thickness setting is satisfied, an ODR, i.e., an omnidirectional corner mirror, can be formed.
Referring to fig. 11, a first opening 115 is etched on the first passivation layer 1041 to expose the light facets 113.
In some embodiments, the etching process comprises a dry or wet etch.
Referring to fig. 12 and 13, a sacrificial coating 1161 is formed on the first passivation layer 1041, the second passivation layer 1042 and the third passivation layer 1043 forming the first opening 115, and then the sacrificial coating 1161 is exposed in a patterning manner, the sacrificial coating 1161 on the second passivation layer 1042 and the third passivation layer 1043 is removed by development, and the sacrificial coating 1161 on the first passivation layer 1041 and the first opening 115 is remained, so that the sacrificial layer 116 is obtained.
In some embodiments, the thickness ratio of the sacrificial coating 1161 to the light reflecting layer 105 is 3: 1, the sacrificial layer 116 comprises photoresist, SU-8, polyimide, SiO 2 And SiN x Any one of them.
Referring to fig. 14, a first light reflecting layer 1051 is formed on the sacrificial layer 116, and a second light reflecting layer 1052 is formed on the second passivation layer 1042 and the third passivation layer 1043, and since the thickness of the sacrificial layer 116 is greater than that of the first passivation layer 1041, discontinuity of the first light reflecting layer 1051 and the second light reflecting layer 1052 can be ensured.
In some embodiments, the first light-reflecting layer 1051 and the second light-reflecting layer 1052 are formed by deposition, and the first light-reflecting layer 1051 and the second light-reflecting layer 1052 may be made of a highly reflective metal such as Al, Ag, or other highly reflective medium material, and have a reflectivity greater than 80%.
Referring to fig. 15, the sacrificial layer 116 is stripped, the first light reflecting layer 1051 on the sacrificial layer 116 is removed to expose the light surfaces 113, and the second light reflecting layer 1052 on the second passivation layer 1042 and the third passivation layer 1043 remains.
Referring to fig. 16 and 17, an insulating layer 106 is formed on the second light reflecting layer 1052, the first passivation layer 1041 and the first opening 115, and then a second opening 119 is etched in the insulating layer 106 at a position corresponding to the first opening 115 to expose the light emitting surface 113.
In some embodiments, the insulating layer 106 material may be an organic material or an inorganic material as electrical isolation. In some embodiments, the diameter of the second opening 119 is not smaller than the diameter of the first opening 115, so that the light emitting surface 113 is not blocked by the insulating layer 106. In some embodiments, the insulating layer 106 may be omitted if the light reflecting layer 105 is not itself conductive.
Referring to fig. 18, an electrode layer 107 is formed in the first opening 115, the electrode layer 107 is electrically connected to the second doped semiconductor layer 110 of the LED unit 109, and the second doped semiconductor layers 110 of adjacent LED units 109 are electrically connected through the electrode layer 107. In some embodiments, a current spreading layer may be further included in the LED epitaxial layer 118, and therefore, a functional layer structure such as a current spreading layer may be further provided between the electrode layer 107 and the second doped semiconductor layer 110, so that the uniform current transmission performance may be further improved. In some embodiments, the electrode layer 107 is coated on the entire surface of the LED unit 109 and then connected to the common electrode contact of the driving panel 101 together.
In some embodiments, the electrode layer 107 is made of a transparent material, such as a transparent conductive film, and serves as an ohmic contact layer and a light outlet of the LED unit 109.
In some embodiments, in order to improve the light collimation, a bragg mirror 108 may be further deposited at the light exit, see fig. 19, where the bragg mirror 108 is located on the electrode layer 107, and the reflectivity of the bragg mirror 108 is between 50% and 70%; in some embodiments, it is necessary to dispose a reflective metal on the bottom of the LED unit 109, and it is further necessary that the reflectivity of the bragg reflector 108 is smaller than the reflectivity of the reflective metal on the bottom of the LED unit 109.
In some embodiments, the bragg mirror 108 is coated over the entire surface of the electrode layer 107.
In some embodiments, when the electrode layer 107 is coated on the entire surface of the LED unit 109 and the bragg reflector 108 is coated on the entire surface of the electrode layer 107, the electrode layer 107 and the bragg reflector 108 are made of a light-transmissive material, such as indium tin oxide. In some embodiments, the second doped semiconductor layer 110 may be directly combined with indium tin oxide.
In some embodiments, the lift-off process for preparing the light reflecting layer 105 by depositing the sacrificial layer 116, then depositing the second light reflecting layer 1052, and finally removing the sacrificial layer 116 is directly different from the existing dry etching or wet etching process. The existing dry etching or wet etching is essentially a process of removing a surface material through a photoresist exposed area, so that a reflective layer with high reflectivity needs to be etched through photoetching, and in the actual operation process, when the photoetching-based etching process is directly adopted, because the reflectivity of the reflective layer is generally at least more than 80%, in the light for exposing the photoresist, the part which is not absorbed by the photoresist is almost completely reflected by the reflective layer 105, so that the photoetching resolution is poor, and the designed photoetching pattern cannot be obtained for etching. However, after the lift off technology is adopted, the sacrificial layer 116 can be directly stripped, so that a dry or wet etching process based on photolithography is not required, and the first light reflecting layer 1051 on the sacrificial layer 116 can be stripped along with the sacrificial layer 116, thereby omitting an etching step for the light reflecting layer 105 with high reflectivity.
After the second reflective layer 1052 is formed on the side surface of the LED unit 109, the spontaneous emission photons excited by the multiple quantum wells can be blocked by the reflective layer, and cannot escape from the side surface of the LED unit 109, and can only exit from the light exit surface 113 on the top, so that the second reflective layer 1052 can completely prevent crosstalk between adjacent pixels; the photons reflected by the reflective layer 105 are reflected multiple times inside the LED unit 109, and then exit through the only light exit surface 113, which greatly increases the light output power.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The present invention has been described in detail, and the principles and embodiments of the present invention have been explained by applying specific examples, and the descriptions of the above examples are only used to help understanding the technical solutions and the core ideas of the present invention; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (18)

  1. A preparation method of a Micro LED display device is characterized by comprising the following steps:
    providing a drive panel (101), the drive panel (101) comprising a plurality of first contacts (103);
    providing LED units (109), wherein the LED units (109) are arrayed on the driving panel (101) and are driven by the corresponding first contacts (103) individually; the LED unit (109) is provided with a light-emitting surface (113) and a side surface (114) connected with the light-emitting surface (113);
    forming a passivation layer (104), wherein the passivation layer (104) is located on the LED units (109) and comprises a first passivation layer (1041) located on the light emitting surface (113), a second passivation layer (1042) located on the side surface (114) and integrally connected with the first passivation layer (1041), and a third passivation layer (1043) located between adjacent LED units (109) and integrally connected with the second passivation layer (1042);
    a first opening (115) used for exposing the light emitting surface (113) is arranged on the first passivation layer (1041);
    forming a sacrificial layer (116), the sacrificial layer (116) being located on the first passivation layer (1041) and covering the first opening (115);
    forming a light-reflective layer (105) comprising a first light-reflective layer (1051) on the sacrificial layer (116) and a second light-reflective layer (1052) on the second passivation layer (1042) and the third passivation layer (1043), the first light-reflective layer (1051) and the second light-reflective layer (1052) being disconnected from each other; stripping the sacrificial layer (116), leaving the second light-reflecting layer (1052) and exposing the first passivation layer (1041) and the first opening (115);
    the step of forming a sacrificial layer (116) comprises:
    forming a sacrificial coating (1161), the sacrificial coating (1161) being located on the first opening (115), the first passivation layer (1041), the second passivation layer (1042), and the third passivation layer (1043);
    performing patterned exposure on the sacrificial coating (1161), removing the sacrificial coating (1161) on the second passivation layer (1042) and the third passivation layer (1043), and leaving the first passivation layer (1041) and the sacrificial coating (1161) on the first opening (115) to obtain the sacrificial layer (116);
    the thickness ratio of the sacrificial coating (1161) to the light reflecting layer (105) is greater than 2: 1.
  2. 2. a method of manufacturing a Micro LED display device according to claim 1, wherein the step of providing an LED unit (109) comprises:
    providing a substrate (117) on which an LED epitaxial layer (118) is disposed;
    bonding the driving panel (101) and the LED epitaxial layer (118), and forming a bonding layer (102) between the driving panel (101) and the LED epitaxial layer (118);
    removing the substrate (117);
    etching the LED epitaxial layer (118) into a step structure, wherein the step structure comprises a first doping type semiconductor layer (112), a second doping type semiconductor layer (110) and an active layer (111) positioned between the first doping type semiconductor layer and the second doping type semiconductor layer; the light emitting surface (113) is positioned on the second doped semiconductor layer (110) and positioned at the top end of the step structure; the stepped structure electrically isolates and disconnects at least the second doped semiconductor layers (110) of adjacent LED cells (109) from each other.
  3. 3. A method of making a Micro LED display device according to claim 2,
    the step structure also enables the first doping type semiconductor layer (112) and the active layer (111) of the adjacent LED units (109) to be mutually disconnected and electrically isolated;
    the bonding layer (102) is made of a conductive material, and the bonding layer (102) is etched to disconnect the bonding layers (102) between the adjacent LED units (109);
    the first contact (103) is located below the corresponding LED unit (109), and the first doped semiconductor layer (112) is electrically connected with the first contact (103) so that the LED unit (109) can be driven independently.
  4. 4. A method of manufacturing a Micro LED display device according to claim 3, wherein the step of electrically connecting the first doped semiconductor layer (112) to the first contact (103) to enable the LED units (109) to be driven individually comprises:
    -providing an electrode layer (107) on the first passivation layer (1041); the electrode layer (107) is electrically connected with the second doped semiconductor layer (110) of the LED unit (109) through the first opening (115), and the second doped semiconductor layer (110) of the adjacent LED unit (109) is electrically connected through the electrode layer (107).
  5. 5. A method of manufacturing a Micro LED display device according to claim 4, wherein the step of providing the electrode layer (107) on the first passivation layer (1041) is preceded by the steps of:
    forming an insulating layer (106), the insulating layer (106) being located on the first passivation layer (1041) and the second light reflecting layer (1052), and then providing a second opening (119) in the insulating layer (106) on the first passivation layer (1041) and exposing the first opening (115).
  6. 6. A method of manufacturing a Micro LED display device according to claim 4, wherein the step of providing an electrode layer (107) on the first passivation layer (1041) is followed by:
    forming a Bragg mirror (108), the Bragg mirror (108) being located on the electrode layer (107).
  7. 7. A method of manufacturing a Micro LED display device according to claim 6, wherein the reflectivity of the Bragg reflector (108) is between 50% and 70%.
  8. 8. A method of manufacturing a Micro LED display device according to claim 1, wherein the sacrificial layer (116) comprises photoresist, SU-8, polyimide, SiO 2 And SiN x Any one of them.
  9. 9. A method of manufacturing a Micro LED display device according to claim 1, wherein the reflective layer (105) has a reflectivity of more than 80%.
  10. A Micro LED display device prepared by the method of any of claims 1-9, comprising:
    a drive panel (101) comprising a plurality of first contacts (103);
    a plurality of LED units (109), the LED units (109) being arranged in an array on the driving panel (101) and being individually driven through the first contacts (103);
    the LED unit (109) is provided with a light-emitting surface (113) and a side surface (114) connected with the light-emitting surface (113);
    the passivation layer (104) comprises a first passivation layer (1041) located on the light emitting surface (113), a second passivation layer (1042) located on the side surface (114) and integrally connected with the first passivation layer (1041), and a third passivation layer (1043) located between adjacent LED units (109) and integrally connected with the second passivation layer (1042);
    a second light reflecting layer (1052) on the second passivation layer (1042) and the third passivation layer (1043).
  11. 11. A Micro LED display device according to claim 10, comprising a bonding layer (102), the bonding layer (102) being located between the driving panel (101) and the LED unit (109);
    the LED unit (109) comprises a step structure formed by etching an LED epitaxial layer (118), the step structure comprises a first doped semiconductor layer (112), a second doped semiconductor layer (110) and an active layer (111) positioned between the first doped semiconductor layer and the second doped semiconductor layer, and the light-emitting surface (113) is positioned on the second doped semiconductor layer (110) and positioned at the top end of the step structure; the stepped structure electrically isolates and disconnects at least the second doped semiconductor layers (110) of adjacent LED cells (109) from each other.
  12. 12. A Micro LED display device according to claim 11, wherein the stepped structure also disconnects and electrically isolates the first doped semiconductor layer (112), the active layer (111) between adjacent LED cells (109) from each other;
    the first contacts (103) are located below the corresponding LED units (109), and the first contacts (103) are electrically connected with the corresponding first doped semiconductor layers (112).
  13. 13. A Micro LED display device according to claim 12, comprising an electrode layer (107), the electrode layer (107) being located on the first passivation layer (1041);
    the electrode layer (107) is electrically connected with the second doped semiconductor layer (110) through the first opening (115), and the second doped semiconductor layers (110) of the adjacent LED units (109) are electrically connected through the electrode layer (107).
  14. 14. A Micro LED display device according to claim 13, further comprising an insulating layer (106), the insulating layer (106) being located on the first passivation layer (1041) and the second light reflecting layer (1052);
    the insulating layer (106) is provided with a second opening (119) exposing the first opening (115), and the electrode layer (107) is in contact with the insulating layer (106) through the second opening (119).
  15. 15. A Micro LED display device according to claim 14, further comprising a bragg mirror (108), the bragg mirror (108) being located on the electrode layer (107).
  16. 16. A Micro LED display device according to claim 10, wherein the driving panel (101) is a silicon based CMOS driver board or a thin film field effect transistor driver board.
  17. 17. A Micro LED display device according to claim 10, wherein the LED cells (109) have dimensions of 0.1-5 microns.
  18. 18. A Micro LED display device according to claim 10, wherein the thickness δ of the passivation layer (104) sidewalls satisfies the following formula: δ = λ/(4 × n);
    wherein λ is an emission wavelength of the LED unit (109), and n represents a refractive index of the passivation layer (104).
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