CN100388868C - Electroluminescent device containing silicon base high efficient luminous material and preparation method - Google Patents
Electroluminescent device containing silicon base high efficient luminous material and preparation method Download PDFInfo
- Publication number
- CN100388868C CN100388868C CNB2004100708492A CN200410070849A CN100388868C CN 100388868 C CN100388868 C CN 100388868C CN B2004100708492 A CNB2004100708492 A CN B2004100708492A CN 200410070849 A CN200410070849 A CN 200410070849A CN 100388868 C CN100388868 C CN 100388868C
- Authority
- CN
- China
- Prior art keywords
- type
- silicon
- electroluminescent device
- layer
- luminous material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
Abstract
The present invention relates to an electroluminescence device which contains silicon base high efficiency luminescence materials. Impurity ions are injected in a silicon based silicon dioxide film to realize the high efficiency room temperature luminescence of the silicon base materials. The present invention comprises a p-type or n-type silicon substrate, a doping layer, an n-type or p-type polycrystalline silicon layer, a silicon dioxide isolation layer and two electrodes, wherein the doping layer is arranged on the silicon substrate, and is formed by that silicon dioxide is grown on the silicon substrate by an ion injection method; the doping layer is an active region of the electroluminescence device; the n-type or p-type polycrystalline silicon layer is formed on the doping layer; the silicon dioxide isolation layer is grown on the doping layer and the polycrystalline silicon layer; one electrode is made on the n-type or p-type polycrystalline silicon layer, and the other electrode is made on the n-type or p-type silicon substrate. A light outlet is formed on the surface of the silicon dioxide isolation layer.
Description
Technical field
The present invention relates to a kind of electroluminescent device and preparation method, particularly a kind of electroluminescent device and preparation method who comprises silicon base luminous material.
Background technology
The irreplaceable powerful pillar of information high-tech such as the achievement of silica-based electronics and integrated circuit has become the contemporary development electronic computer, communicates by letter, Electronic Control and information processing, it is the illustrious status in national economy and the national defense construction not only, and consumer electronic product gos deep into huge numbers of families already, becomes necessary part in our life.And, containing inexhaustible silicon raw material on the earth, along with development of integrated circuits since nearly half a century, silica-base material and device technology have obtained surprising maturation, silica-based electronic industry has become the leading of current information industry, the more important thing is that the ratio of performance to price of silica-based electronic product is almost without a rival.
Yet in the development of optoelectronic areas, though powerful advantage is arranged, captured market with very high cost performance, at the most representative optical communication development field now at silica-based solar cell, photodetector etc., silicon is exclusion still, fails to enter leading role's position.
Can silica-base material efficiently luminous, thereby make high efficiency light-emitting diode and laser, this has been that people seek assiduously and the target that do not reach as yet always since semiconductor laser comes out, and this also is can the decision silica-base material occupy the leading role position in optoelectronic areas a key.Yet it is well-known, silicon belongs to indirect bandgap material, the extreme value of conduction band and valence band is not in the same point of momentum space, according to principle of conservation of momentum, the compound of hole that is injected into electronics at the bottom of the silicon conduction band and top of valence band must be by means of the participation of phonon, it is the process of body transition more than, and probability is much smaller more than the compound-material of direct band gap, so the efficient of the interband recombination luminescence of silicon materials is very low.
Since the efficient room temperature of the early 1990s in 20th century discovery porous silicon was luminous, the luminous research of silica-based high-efficiency had obtained considerable progress, and at this wherein, doping impurity is one of most important several means always.
The present invention is on the basis that we repeatedly test, what propose the complete compatibility of a kind of and existing microelectronic technique can realize silicon base luminous material and the new method and the thought that comprise the electroluminescent device of this material, and might be used on a large scale in sub-of silicon based opto-electronics field in the future.
Summary of the invention
The purpose of patent of the present invention provides a kind of electroluminescent device and preparation method who comprises silicon base luminous material, and its core is ion implanted impurity ion aluminium (Al), gallium (Ga), indium (In), arsenic (As), antimony (Sb), bismuth (Bi) or their combination heavy dose of in the silicon based silicon dioxide thin-film material.Its advantage is with existing microelectronic technique compatible fully, and technology is simple, and good reproducibility is realized easily, is easy to promote.
The invention provides a kind of electroluminescent device that comprises silicon base luminous material, it is luminous to adopt foreign ion to be infused in the efficient room temperature of realizing silica-base material in the silicon based silicon dioxide film, it is characterized in that, comprising:
One p-type or n-type silicon substrate;
One doped layer, this doped layer are produced on p-type or the n-type silicon substrate, and this doped layer is that the method for injecting with ion on the silicon dioxide of growing on p-type or the n-type silicon substrate forms, and this doped layer is the active area of luminescent device;
One n-type or p-type polysilicon layer, this n-type or p-type polysilicon layer are produced on the doped layer;
One silicon dioxide separator, this silicon dioxide separator are grown on doped layer and n-type or the p-type polysilicon layer;
One electrode, this electrode are produced on n-type or the p-type polysilicon layer;
Another electrode, this electrode are produced on p-type or the n-type silicon substrate;
Leave a light-emitting window in the silicon dioxide insulation surface.
Wherein the foreign ion that doped layer injected is aluminium, gallium, indium, arsenic, antimony, bismuth or their combination.
The invention provides a kind of preparation method who comprises the electroluminescent device of silicon base luminous material, it is characterized in that, comprise the steps:
Step S10: based on the silicon substrate of n-type or p-type;
Step S20: at the surface of silicon growth layer of silicon dioxide film of n-type or p-type;
Step S30: inject means by ion the foreign ion of heavy dose is injected into silica membrane;
Step S40: under different temperature, atmosphere, anneal, prepare the room temperature luminous silicon base material;
Utilize this silicon base luminous material, prepare the silica-based electroluminescent device of metals-oxides-semiconductor structure.
Wherein the foreign ion that is injected is aluminium, gallium, indium, arsenic, antimony, bismuth or their combination.
The shared atomic percent of peak concentration that wherein is injected into silica membrane the inside foreign ion is not less than 1%.
Wherein annealing temperature is chosen between 100 ℃ to 1000 ℃.
Wherein the chemical expression formula of silica membrane is SiO
x, the value of x is between 1 to 2.
Description of drawings
For further specifying technology contents of the present invention, below in conjunction with embodiment and accompanying drawing the present invention is done a detailed description, wherein:
Fig. 1 utilizes foreign ion to inject the silica-based room temperature luminous SiO of preparation
2The flow chart of thin-film material;
Fig. 2 is the Al for preparing
3+/ SiO
2Thin-film material is the room temperature fluorescence spectrum after the different temperatures annealing in 30 minutes under through the high pure nitrogen protective atmosphere, and excitation source adopts argon ion laser, and optical source wavelength is 488 nanometers, and exciting power is 60 milliwatts;
Fig. 3 is for adopting silica-based room temperature luminous Al
3+/ SiO
2Thin-film material prepares the schematic diagram of the electroluminescent device of Metal-oxide-semicondutor (MOS) structure.
Embodiment
See also shown in Figure 3ly, a kind of electroluminescent device that comprises silicon base luminous material of the present invention adopts foreign ion to be infused in and realizes the room temperature luminous of silica-base material in the silicon based silicon dioxide film, comprising:
One p-type or n-type silicon substrate 10;
One doped layer 20, this doped layer 20 is produced on the silicon substrate 10, and this doped layer 20 is that the method for injecting with ion on the silicon dioxide of growth on the silicon substrate 10 forms, and this doped layer 20 is active areas of luminescent device; Wherein the foreign ion that injected of doped layer 20 is aluminium, gallium, indium, arsenic, antimony, bismuth or their combination;
One n-type or p-type polysilicon layer 30, this n-type or p-type polysilicon layer 30 are produced on the doped layer 20;
One electrode 60, this electrode 60 are produced on n-type or the p-type polysilicon layer 30;
Another electrode 50, this electrode 50 are produced on p-type or the n-type silicon substrate 10;
Leave a light-emitting window on silicon dioxide separator 40 surfaces.
See also a kind of preparation method who comprises the electroluminescent device of silicon base luminous material of the present invention shown in Figure 1, comprise the steps:
Step S10: based on the silicon substrate 1 of n-type or p-type;
Step S20: at silicon chip surface growth layer of silicon dioxide film 2;
Step S30: inject means by ion the foreign ion of heavy dose is injected into silica membrane 2; Wherein the foreign ion that is injected is aluminium, gallium, indium, arsenic, antimony, bismuth or their combination; The shared atomic percent of peak concentration that wherein is injected into silicon based silicon dioxide film the inside foreign ion is not less than 1%;
Step S40: under different temperature, atmosphere, anneal, prepare room temperature luminous silicon base material efficiently;
Utilize this silicon base luminous material, prepare the silica-based electroluminescent device of metals-oxides-semiconductor structure.
Wherein annealing temperature is chosen between 100 ℃ to 1000 ℃.
Wherein the chemical expression formula of silicon based silicon dioxide film is SiO
x, the value of x is between 1 to 2.
The preparation thought of silica-based room temperature high efficient luminous material of the present invention and the electroluminescent device that comprises this material with concrete technology is: on silicon chip substrate, the method for growing by silicon chip heat (also can pass through means such as plasma chemical vapor deposition or magnetron sputtering) growth one deck is less than the silicon dioxide (SiO of 500 nanometer thickness earlier
2) layer, the method for injecting by ion is injected into silicon dioxide (SiO with foreign ion then
2) layer in.After injection is finished sample is placed on annealing furnace annealing the different time under the high pure nitrogen protective effect under different temperatures, utilizes this way can prepare silica-based efficiently room temperature high efficient luminous material.
Fig. 2 is silica-based room temperature luminous Al
3+/ SiO
2The room temperature fluorescence spectrum of thin-film material, the excitation source of employing are argon ion laser, and optical source wavelength adopts 488 nanometers, and power selection is 60 milliwatts.Wherein silica-based room temperature luminous Al
3+/ SiO
2The preparation condition of thin-film material is: the silicon dioxide layer of 300 nanometer thickness generates by dry-oxygen oxidation, at room temperature carries out heavy dose of Al
3+Ion injects, and injection parameter is 82 kilovolts of injecting voltages, implantation dosage 1.8 * 10
16/ cm
2, different temperatures annealing different time under the high pure nitrogen protective atmosphere then.
Fig. 3 is adopting heavy dose of Al
3+Ion injects the silica-based room temperature luminous SiO that forms
2The schematic diagram for preparing the electroluminescent device of Metal-oxide-semicondutor (MOS) structure on the basis of thin-film material.The method of concrete preparation is: at p
+Type (n
+Type) forms silicon dioxide layer by thermal oxidation on the silicon chip substrate 10, then with the Al of heavy dose
3+Ion injects; On the basis of suitable temperature and atmosphere annealing, utilize the n of plasma chemical vapor deposition deposit one deck 300 nanometer thickness on silicon dioxide layer 20
+Type (p
+Type) polysilicon layer 30; The silicon dioxide layer 40 that utilizes PECVD growth one deck 200 nanometer thickness on polysilicon layer 30 is as the separator between the electrode 50,60; The annulus window of the different radii size that to etch two centers of circle on separator 40 be same point, one etches into silicon substrate 10 surfaces, and another one etches into polysilicon layer 30 surfaces.Last at the metallic aluminium of upper surface deposit one deck as electrode 50,60, form good Ohmic contact by process annealing under nitrogen atmosphere, can prepare the electroluminescent device of silicon based rear-earth-doped luminous material Metal-oxide-semicondutor (MOS) structure.
Claims (7)
1. electroluminescent device that comprises silicon base luminous material, it is luminous to adopt foreign ion to be infused in the efficient room temperature of realizing silica-base material in the silicon based silicon dioxide film, it is characterized in that, comprising:
One p-type or n-type silicon substrate;
One doped layer, this doped layer are produced on p-type or the n-type silicon substrate, and this doped layer is that the method for injecting with ion on the silicon dioxide of growing on p-type or the n-type silicon substrate forms, and this doped layer is the active area of luminescent device;
One n-type or p-type polysilicon layer, this n-type or p-type polysilicon layer are produced on the doped layer;
One silicon dioxide separator, this silicon dioxide separator are grown on doped layer and n-type or the p-type polysilicon layer;
One electrode, this electrode are produced on n-type or the p-type polysilicon layer;
Another electrode, this electrode are produced on p-type or the n-type silicon substrate;
Leave a light-emitting window in the silicon dioxide insulation surface.
2. the electroluminescent device that comprises silicon base luminous material according to claim 1 is characterized in that, wherein the foreign ion that doped layer injected is aluminium, gallium, indium, arsenic, antimony, bismuth or their combination.
3. a preparation method who comprises the electroluminescent device of silicon base luminous material is characterized in that, comprises the steps:
Step S10: based on the silicon substrate of n-type or p-type;
Step S20: at the surface of silicon growth layer of silicon dioxide film of n-type or p-type;
Step S30: inject means by ion the foreign ion of heavy dose is injected into silica membrane;
Step S40: under different temperature, atmosphere, anneal, prepare the room temperature luminous silicon base material;
Utilize this silicon base luminous material, prepare the silica-based electroluminescent device of metals-oxides-semiconductor structure.
4. the preparation method who comprises the electroluminescent device of silicon base luminous material according to claim 3 is characterized in that, wherein the foreign ion that is injected is aluminium, gallium, indium, arsenic, antimony, bismuth or their combination.
5. the preparation method who comprises the electroluminescent device of silicon base luminous material according to claim 4 is characterized in that, the shared atomic percent of peak concentration that wherein is injected into silica membrane the inside foreign ion is not less than 1%.
6. the preparation method who comprises the electroluminescent device of silicon base luminous material according to claim 3 is characterized in that wherein annealing temperature is chosen between 100 ℃ to 1000 ℃.
7. the preparation method who comprises the electroluminescent device of silicon base luminous material according to claim 3 is characterized in that, wherein the chemical expression formula of silica membrane is SiO
x, the value of x is between 1 to 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100708492A CN100388868C (en) | 2004-07-23 | 2004-07-23 | Electroluminescent device containing silicon base high efficient luminous material and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100708492A CN100388868C (en) | 2004-07-23 | 2004-07-23 | Electroluminescent device containing silicon base high efficient luminous material and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1725920A CN1725920A (en) | 2006-01-25 |
| CN100388868C true CN100388868C (en) | 2008-05-14 |
Family
ID=35925103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100708492A Expired - Fee Related CN100388868C (en) | 2004-07-23 | 2004-07-23 | Electroluminescent device containing silicon base high efficient luminous material and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100388868C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100495748C (en) * | 2006-09-18 | 2009-06-03 | 中国科学院半导体研究所 | Silicon base efficient equalized electron adulterated lighting part and its making method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1442883A (en) * | 2003-02-28 | 2003-09-17 | 浙江大学 | Method of preparing high effect silicon base luminuous film on silicon sheet |
-
2004
- 2004-07-23 CN CNB2004100708492A patent/CN100388868C/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1442883A (en) * | 2003-02-28 | 2003-09-17 | 浙江大学 | Method of preparing high effect silicon base luminuous film on silicon sheet |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1725920A (en) | 2006-01-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kenyon | Erbium in silicon | |
| KR102102873B1 (en) | Advanced hydrogenation of silicon solar cells | |
| Liu et al. | All‐Inorganic Perovskite Quantum Dots/p‐Si Heterojunction Light‐Emitting Diodes under DC and AC Driving Modes | |
| Tsybeskov et al. | Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide | |
| Tsybeskov | Nanocrystalline silicon for optoelectronic applications | |
| CN102959722A (en) | High-density P-doped quantum dot solar cell obtained by the active doping of INP and a production method therefor | |
| CN104022203B (en) | GaN-based light-emitting diode structure and preparation method thereof | |
| US5667905A (en) | Electro-luminescent material, solid state electro-luminescent device and process for fabrication thereof | |
| KR20080034444A (en) | Crystal silicon element and method for fabricating same | |
| US20230246115A1 (en) | The Preparation Method and Application of An Er Doped Ga2O3 Film | |
| CN103022898A (en) | ZnO-based low-threshold electrically-pumped random laser device with silicon substrate and method for manufacturing ZnO-based low-threshold electrically-pumped random laser device | |
| Lopez et al. | Room-temperature electroluminescence from erbium-doped porous silicon | |
| CN105789399B (en) | P-type broad stopband oxide and ZnO combination vertical structure light-emitting devices and preparation method thereof | |
| CN100388868C (en) | Electroluminescent device containing silicon base high efficient luminous material and preparation method | |
| CN103474541B (en) | Improve device and the preparation method of nitride silicon based thin-film led luminous efficiency | |
| CN108550668A (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN102369605B (en) | Light emitting diode element and method for producing the same | |
| CN100496177C (en) | Electroluminescent device containing silicon based rear-earth-doped luminous material and preparation method thereof | |
| CN101170847A (en) | Silicon base lanthanon adulterated EL part | |
| CN104681682B (en) | One kind is based on Er ions CeO2Electroluminescent device of film and preparation method thereof | |
| JP2007043016A (en) | Crystal silicon element, and manufacturing method thereof | |
| CN203631585U (en) | Silicon-ytterbium quantum cascading and PIN mixing light-emitting tube | |
| CN100495748C (en) | Silicon base efficient equalized electron adulterated lighting part and its making method | |
| CN206210825U (en) | A kind of n type gallium nitride based light-emitting diode | |
| Gao et al. | Photoluminescence and electroluminescence studies on Tb-doped silicon rich oxide materials and devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080514 |