CN100385217C - Flexible array of temperature sensor, and preparation method - Google Patents
Flexible array of temperature sensor, and preparation method Download PDFInfo
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- CN100385217C CN100385217C CNB2004100659015A CN200410065901A CN100385217C CN 100385217 C CN100385217 C CN 100385217C CN B2004100659015 A CNB2004100659015 A CN B2004100659015A CN 200410065901 A CN200410065901 A CN 200410065901A CN 100385217 C CN100385217 C CN 100385217C
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Abstract
The present invention discloses a structure and a manufacturing method for a flexible temperature sensor array. A flexible temperature sensor array comprises a temperature-sensitive resistor (2) and a leading wire (3) electrically connected with the temperature-sensitive resistor (2). The present invention is characterized in that one side of the temperature-sensitive resistor (2) is connected with a lug boss (4) of a flexible substrate (5), and the other side of the temperature-sensitive resistor (2) and the leading wire (3) on the edge of the temperature-sensitive resistor (2) are coated with insulated protective layers (1); more than sixteen arrays of the temperature-sensitive resistor (2) in the structure are arranged in the flexible substrate (5) to form the sensor array. The manufacturing method for a flexible temperature sensor array comprises a photoetching method, a plasma etching method and a lift-off method. The temperature-sensitive resistor (2) is a film resistor made of metal Pt or Ni, and the leading wire (3) is a metal film. The flexible substrate (5), the lug boss (4) and the insulated protective layers (1) are made of flexible materials and can be bent and deformed, and the present invention is suitable for detecting the temperature of any curved surface and temperature distribution.
Description
Technical field
The present invention relates to sensor array, especially relate to a kind of preparation method of flexible array of temperature sensor.
Background technology
At present, people have invented various temperature sensors for detected temperatures, especially the temperature sensor that changes based on material temperature-resistance characteristic.Commonly used as metal platinum or other metal film temperature sensor, they are to form metal thin film resistor on dielectric substrate, and welding lead, carry out the outer formation temperature sensor of sealing at last.These Metal Membrane Temperature Sensor are in approaching one section temperature range of room temperature, and changes in resistance and temperature variation are approximately linear relationship, and stability is higher, obtained using widely.Especially the metal platinum temperature sensor is present measuring accuracy and all higher temperature sensor of stability.But, these temperature sensors still have weak point: at first be the temperature that single sensor once can only detect some points, when needs detect the temperature of each point on the face simultaneously, can only realize detecting with single sensor of some this separation, brought inconvenience to application.Next is because they only constitute a temperature sensor by a temperature-sensitive resistor, if this temperature sensor damages, then must in time change, and makes troubles with exempt from customs examination observing and controlling.At last, when plurality of single sensor is used to detect the Temperature Distribution of each point in the spatial dimension simultaneously,, also can gives to use and make troubles because lead-in wire is too many.
Summary of the invention
Deficiency in view of existing all temps sensor the present invention seeks to propose a kind of preparation method of flexible array of temperature sensor for overcoming weak point of the prior art.
Technical scheme of the present invention is: a kind of flexible array of temperature sensor, comprise thermo-sensitive resistor and the lead-in wire and the fairlead that are electrically connected with it, wherein:
The one side of thermo-sensitive resistor is connected with the boss of flexible substrate, the lead-in wire on another side and its edge is coated with insulating protective layer, is equipped with the array of the thermo-sensitive resistor that is arranged in above-mentioned structure more than three on the flexible substrate, to constitute flexible array of temperature sensor.
In the flexible array of temperature sensor: flexible substrate is a polyester material, and its thickness is 50～150 microns; The height of boss is 40～60 microns; Insulating protective layer is pi or positive photoetching rubber or negative photoresist, and its thickness is 2～5 microns; Be equipped with 4 * 6 thermo-sensitive resistors on the flexible substrate; Thermo-sensitive resistor is metal platinum sheet resistance or metal nickel film resistance.
A kind of preparation method of flexible array of temperature sensor comprises photoetching and plasma etching method and lift-off method, it is characterized in that finishing according to the following steps:
At first, selecting thickness for use is that DuPont Kapton HN type mylar between 75～125 μ m is as flexible substrate, evaporate earlier the aluminium that thickness is 0.3～0.4 μ m thereon, form the planar graph of boss again with photoetching technique, afterwards, carve the boss of stereo structure with plasma etching technology, wherein, the height of boss is 40～60 μ m, then, erodes the aluminium on the boss;
Secondly, on boss, form the planar graph of required platinum or nickel thermo-sensitive resistor earlier with photoetching technique, the size of this figure is the standard design of 1000 Ω by nominal resistance, used the oxygen plasma etch boss again 10～20 seconds, and then evaporate the crome metal that thickness is 8～10 nanometers thereon, and then evaporate metal platinum or nickel that thickness is 0.08～0.1 μ m more thereon, then, in acetone, soaked 15～20 minutes, to form thermo-sensitive resistor;
Again secondly, on boss and flexible substrate, form the planar graph of lead-in wire earlier with photoetching technique, get fairlead in the position of fairlead then, use oxygen plasma etch boss and flexible substrate 10～20 seconds again, and then evaporating thickness with the junction, two ends of thermo-sensitive resistor thereon is the crome metal of 8～12 nanometers, and then evaporates the metallic gold that thickness is 0.1～0.15 μ m more thereon, afterwards, in acetone, soaked 15～20 minutes, to form lead-in wire;
Next, on the above-mentioned boss and flexible substrate that is equipped with thermo-sensitive resistor and lead-in wire, being covered with thickness with whirl coating technology is 2～5 microns pi or positive photoetching rubber or negative photoresist, to form insulating protective layer;
At last, by signal processing circuit flexible array of temperature sensor is demarcated.
A kind of preparation method of flexible array of temperature sensor with respect to the beneficial effect of prior art is:
Flexible array of temperature sensor in one, this method is made up of plurality of single metal thin film resistor temperature sensor, make this flexible array of temperature sensor thickness both approach (less than 150 μ m), weight is light (having only several grams) again, also flexible good, can be installed in the body surface detected temperatures of arbitrary shape and the distribution of temperature.
Two, this method is made thermo-sensitive resistor and lead-in wire thereof with micromachined technology and lift-off technology; thermo-sensitive resistor is metal platinum sheet resistance or metal nickel film resistance; thermo-sensitive resistor is produced on above the boss especially; can more effectively stick on the testee surface contacts with it; and the thickness of insulating protective layer has only 2～5 microns, has guaranteed the flexible array of temperature sensor needs of response fast.
Description of drawings
Be described in further detail below in conjunction with the optimal way of accompanying drawing a kind of preparation method of flexible array of temperature sensor.
Fig. 1 is the single metal film resistor temperature sensor xsect basic structure synoptic diagram of a kind of flexible array of temperature sensor of the present invention.
Fig. 2 is the flexible array of temperature sensor middle layer, i.e. the distribution and the structural representation of metal platinum or nickel sheet resistance and lead-in wire.
1 is protective seam, and 2 is thermo-sensitive resistor, and 3 are lead-in wire, and 4 is boss, and 5 is flexible substrate, and 6 is fairlead, and 7 is flexible array of temperature sensor.
Embodiment is referring to Fig. 1, Fig. 2; a kind of flexible array of temperature sensor; flexible substrate 5 and the boss 4 above it are as a whole; thermo-sensitive resistor 2 is produced on above the boss 4; thermo-sensitive resistor 2 by go between 3 and fairlead 6 be connected to outer treatment circuit; some thermo-sensitive resistors 2 are distributed in and constitute flexible array of temperature sensor 7 above the boss 4, and flexible substrate 5 and the boss 4 above it and thermo-sensitive resistor 2 and lead-in wire 3 are coated with insulating protective layer 1.Its structure and functional character are: flexible substrate 5 and the boss 4 above it be as the substrate of flexible array of temperature sensor 7, and owing to have flexibility flexural deformation arbitrarily, can stick to detected temperatures and distribution thereof on the arbitrary surface; Thermo-sensitive resistor 2 is distributed in above the boss 4; can guarantee that flexibility temperature sensor 7 can fully contact with testee; 1 pair of flexibility temperature sensor sensor array 7 of insulating protective layer shields; its thickness has only 2～5 microns, has guaranteed flexible array of temperature sensor 7 needs of response fast.
Flexible array of temperature sensor can be by following making:
At first, select for use DuPont Kapton HN type mylar between the thickness 125 μ m as flexible substrate 5, make boss 4 thereon, method is to evaporate earlier the aluminium that thickness is 0.3～0.4 μ m thereon, forms the planar graph of boss 4 again with photoetching technique, afterwards, carve the boss 4 of stereo structure with plasma etching technology, wherein, the height of boss 4 is 40～60 μ m, then, erode aluminium on the boss 4;
Secondly, on boss 4, make the thermo-sensitive resistor 2 of metallic film, method is to form required platinum or nickel resistance planar graph with photoetching technique on boss 4 earlier, the size of this figure is the standard design of 1000 Ω by nominal resistance, use the oxygen plasma etch boss again 4 about 10～20 seconds, afterwards, and then evaporate the crome metal that thickness is 8～10 nanometers thereon, and then evaporate metal platinum or nickel that thickness is 0.08～0.1 μ m more thereon, then, in acetone, soaked 15～20 minutes, to form the thermo-sensitive resistor 2 of metal platinum or nickel film;
Again secondly, make lead-in wire 3 and fairlead 6, method is the planar graph that forms lead-in wire 3 earlier with photoetching technique on boss 4 and flexible substrate 5, get fairlead in the position of fairlead 6 then, use oxygen plasma etch boss 4 and flexible substrate again 5 about 10～20 seconds, and then evaporating thickness with the junction, thermo-sensitive resistor 2 two ends of metal platinum or nickel film thereon is the crome metal of 8～12 nanometers, and then evaporate the metallic gold that thickness is 0.1～0.15 μ m more thereon, afterwards, in acetone, soaked 15～20 minutes, to form lead-in wire 3;
Next make insulating protective layer 1, method is on the boss 4 and flexible substrate 5 of above-mentioned thermo-sensitive resistor that has metal platinum or a nickel film 2 and lead-in wire 3, being covered with thickness with whirl coating technology is 2～5 microns pi or positive photoetching rubber or negative photoresist, to form insulating protective layer 1; At last, by signal processing circuit flexible array of temperature sensor 7 is demarcated.
During use, flexible array of temperature sensor 7 can be sticked on the testee surface,, be applicable to test curved surface each point temperature because flexibility temperature sensor has the feature of any bending.
Obviously, those skilled in the art can carry out various changes and modification to the preparation method of a kind of flexible array of temperature sensor of the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (1)
1. the preparation method of a flexible array of temperature sensor comprises photoetching and plasma etching method and lift-off method, it is characterized in that finishing according to the following steps:
A, to select thickness for use be that DuPont Kapton HN type mylar between 75～125 μ m is as flexible substrate (5), evaporate earlier the aluminium that thickness is 0.3～0.4 μ m thereon, form the planar graph of boss (4) again with photoetching technique, afterwards, carve the boss (4) of stereo structure with plasma etching technology, wherein, the height of boss (4) is 40～60 μ m, then, erode aluminium on the boss (4);
B, elder generation go up in boss (4) with photoetching technique and form the required platinum or the planar graph of nickel thermo-sensitive resistor (2), the size of this figure is the standard design of 1000 Ω by nominal resistance, used the oxygen plasma etch boss again (4) 10～20 seconds, and then evaporate the crome metal that thickness is 8～10 nanometers thereon, and then evaporate metal platinum or nickel that thickness is 0.08～0.1 μ m more thereon, then, in acetone, soaked 15～20 minutes, to form thermo-sensitive resistor (2);
C, elder generation go up the planar graph that forms lead-in wire (3) with photoetching technique in boss (4) and flexible substrate (5), get fairlead in the position of fairlead (6) then, use oxygen plasma etch boss (4) and flexible substrate (5) 10～20 seconds again, and then evaporating thickness with the two ends of metallic film thermo-sensitive resistor (2) thereon is the crome metal of 8～12 nanometers, and then evaporate the metallic gold that thickness is 0.1～0.15 μ m more thereon, afterwards, in acetone, soaked 15～20 minutes, to form lead-in wire (3);
D, go up in the above-mentioned boss (4) that is equipped with metal platinum or nickel film thermo-sensitive resistor (2) and lead-in wire (3) and flexible substrate (5) that to be covered with thickness with whirl coating technology be 2～5 microns pi or positive photoetching rubber or negative photoresist, with formation insulating protective layer (1);
E, flexible array of temperature sensor (7) is demarcated by signal processing circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100659015A CN100385217C (en) | 2004-12-22 | 2004-12-22 | Flexible array of temperature sensor, and preparation method |
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| CNB2004100659015A CN100385217C (en) | 2004-12-22 | 2004-12-22 | Flexible array of temperature sensor, and preparation method |
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| CN1796951A CN1796951A (en) | 2006-07-05 |
| CN100385217C true CN100385217C (en) | 2008-04-30 |
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| CNB2004100659015A Expired - Fee Related CN100385217C (en) | 2004-12-22 | 2004-12-22 | Flexible array of temperature sensor, and preparation method |
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| US9029180B2 (en) * | 2010-09-13 | 2015-05-12 | Pst Sensors (Proprietary) Limited | Printed temperature sensor |
| CN102853926B (en) * | 2012-09-24 | 2014-09-24 | 江苏物联网研究发展中心 | Packing structure of MEMS (Micro-electromechanical Systems) temperature sensor and manufacturing method of packing structure |
| JP5928608B2 (en) * | 2012-11-28 | 2016-06-01 | 株式会社村田製作所 | Thermistor device |
| BR112016023692A2 (en) * | 2014-04-15 | 2017-08-15 | Koninklijke Philips Nv | temperature measurement probe, magnetic resonance system, and method for monitoring temperature in a magnetic resonance environment |
| US20150346037A1 (en) * | 2014-05-29 | 2015-12-03 | Infineon Technologies Ag | Integrated temperature sensor |
| CN105004842A (en) * | 2015-07-20 | 2015-10-28 | 柳州好顺科技有限公司 | Hand-held air humidity tester |
| CN105318983A (en) * | 2015-10-30 | 2016-02-10 | 中国电子科技集团公司第四十八研究所 | Flexible thin film thermocouple temperature sensor and preparation method thereof |
| CN105606331A (en) * | 2015-12-18 | 2016-05-25 | 中国航天空气动力技术研究院 | Film platinum resistor heat flux sensor with flexible substrate, and manufacturing method for film platinum resistor heat flux sensor |
| EP3435048A1 (en) | 2017-07-25 | 2019-01-30 | Heraeus Sensor Technology GmbH | Sensor for measuring a spatial temperature profile and method for producing a sensor unit |
| CN107681178A (en) * | 2017-08-24 | 2018-02-09 | 上海交通大学 | The detecting system of detection fuel cell pile internal temperature field change and preparation in real time |
| CN109798990B (en) * | 2017-11-17 | 2021-05-25 | 美的集团股份有限公司 | Temperature sensor array and heating equipment |
| EP3578940A1 (en) * | 2018-06-08 | 2019-12-11 | Heraeus Nexensos GmbH | Sensor unit for detecting at least one temperature of at least one galvanic cell and method for producing a sensor unit |
| CN108720813A (en) * | 2018-08-13 | 2018-11-02 | 脱浩东 | A kind of flexible sensor for breast cancer monitoring |
| CN109115358A (en) * | 2018-09-27 | 2019-01-01 | 宁波中车时代传感技术有限公司 | A kind of microelectromechanicsystems systems array formula platinum film temperature sensor and preparation method thereof |
| CN109512577B (en) * | 2018-10-08 | 2022-02-18 | 武汉纺织大学 | Healing-promoting biological environment-friendly medical dressing and manufacturing method thereof |
| CN109512579B (en) * | 2018-10-08 | 2022-02-18 | 武汉纺织大学 | Multi-layer moisture-absorption breathable magnetic therapy and intelligent temperature control type dressing and using method |
| TWI679657B (en) * | 2019-01-14 | 2019-12-11 | 光頡科技股份有限公司 | Flexible resistor component and manufacturing method thereof |
| CN110006549B (en) * | 2019-03-27 | 2021-07-06 | 电子科技大学 | Flexible temperature and humidity sensor with integrated structure and preparation method thereof |
| CN114122540B (en) * | 2021-11-15 | 2023-06-13 | 电子科技大学 | Temperature detector, preparation method thereof and lithium battery structure combination |
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