KR101830304B1 - Fabrication method of integrated sensor and integrated sensor using the same - Google Patents

Abstract

A manufacturing method of an integrated sensor according to the present invention comprises the following steps of: forming a lower electrode of metal or conductive organic material in a region where a humidity sensor is to be formed on a substrate; forming a moisture sensitive dielectric layer on the lower electrode; forming a first conductive layer in a region including the lower electrode and the moisture sensitive dielectric layer and in a region where a temperature sensor on the substrate is to be formed; forming a second conductive layer above the first conductive layer; forming a first electrode of the temperature sensor and an upper electrode of the humidity sensor by removing the first conductive layer and the second conductive layer except for an upper area of the moisture sensitive dielectric layer and a region where the temperature sensor is to be formed; and removing the second conductive layer above the first conductive layer forming a thermal resistance pattern of the temperature sensor.

Description

TECHNICAL FIELD [0001] The present invention relates to a method of manufacturing an integrated sensor and an integrated sensor using the same,

The present invention relates to a method of manufacturing an integrated sensor and an integrated sensor using the same. More particularly, the present invention relates to an integrated sensor and a method of measuring the temperature by accurately measuring the humidity by sensing a change in permittivity of a film according to moisture, And to manufacture an integrated sensor in which a temperature sensor capable of production and a humidity sensor are integrated.

Typically, temperature sensors and humidity sensors have been manufactured and sold using separate processes. Temperature and humidity sensors are indispensably used for control devices in various living environments, and each sensor is treated as a separate component.

At this time, a temperature sensor uses a temperature dependency of a semiconductor device, a temperature-resisting resistor having a resistance change depending on a temperature, and a thermocouple using a thermoelectric power of a dissimilar metal contact.

Humidity sensors are mostly battery resistance type and capacitive type, and capacitive type is widely used in precision humidity measurement field. At this time, a method of forming a sensing film by dipping in a sensing solution and drying is generally used.

However, the manufacturing cost of the temperature sensor and the humidity sensor is increased by the separate process, and in particular, in the case of the humidity sensor, since the sensing film is dipped, it is difficult to secure the operation reliability according to the constant sensitivity.

In addition, when measuring temperature and humidity separately, they are troublesome in measurement, and additional equipment for processing sensor signals of these temperature and humidity is additionally needed.

Patent Publication No. 10-2015-0028929

The present invention provides a method for manufacturing an integrated sensor in which a humidity sensor and a temperature sensor are integrated with each other to assure sufficient performance at a low manufacturing cost, and an integrated sensor using the same.

According to an aspect of the present invention, there is provided a method of manufacturing an integrated sensor including: forming a lower electrode made of metal or a conductive organic material in a region where a humidity sensor is to be formed on a substrate; Forming a humidifying dielectric layer on the lower electrode; Forming a first conductive layer in a region including the lower electrode and the moisture-sensitive dielectric layer and in a region where the temperature sensor on the substrate is to be formed; Forming a second conductive layer on the first conductive layer; Forming the first electrode of the temperature sensor and the upper electrode of the humidity sensor by removing the first conductive layer and the second conductive layer except for the upper moisture sensing layer region and the region where the temperature sensor is to be formed; And removing the second conductive layer on the first conductive layer forming the thermal resistance pattern of the temperature sensor.

The method may further include forming an insulating layer between the lower electrode and the moisture-sensitive dielectric layer.

Here, the first conductive layer may be formed by sputtering a metal having a thermal resistance characteristic.

Here, the first conductive layer may be nichrome (NiCr), and the second conductive layer may be at least one of gold (Au), platinum (Pt), silver (Ag), copper (Cu), and brass.

According to another aspect of the present invention, there is provided an integrated sensor comprising: a lower electrode formed of a metal or a conductive organic material in a humidity sensor arrangement region on a silicon substrate; An insulating layer formed on the temperature sensor arrangement region of the substrate and the lower electrode; A moisture-sensitive dielectric layer formed on the insulating layer above the lower electrode of the humidity sensor arrangement region of the substrate; An upper electrode formed on the moisture-sensitive dielectric layer; And a thermal resistance pattern formed on an insulating layer of the temperature sensor arrangement region of the substrate.

Here, the upper electrode may include a first conductive layer formed on the moisture-absorbing dielectric layer and a second conductive layer formed on the first conductive layer, wherein the first conductive layer may be made of the same material as the thermal resistant resist pattern .

Here, the first conductive layer may be nichrome (NiCr), and the second conductive layer may be at least one of gold (Au), platinum (Pt), silver (Ag), copper (Cu), and brass.

Here, the upper electrode may be formed with a predetermined through-hole pattern so that the moisture-permeated air can contact the moisture-sensitive dielectric layer.

Here, the base insulating layer may be formed between the silicon substrate and the lower electrode and formed on the entire region of the silicon substrate.

The integrated sensor manufacturing method of the present invention having the above-described configuration has an advantage that an integrated sensor in which a high-quality temperature sensor and a humidity sensor are integrated at an inexpensive process cost can be produced.

When the integrated sensor of the present invention having the above-described configuration is used, it is possible to provide a temperature sensor and a humidity sensor having sufficient performance on an integrated substrate together, thereby improving the applicability of the system to be implemented.

1 is a perspective view showing the structure of a temperature sensor using a thermal resistor;
2A is a perspective view showing a structure of a capacitance type humidity sensor;
FIG. 2B is a conceptual view illustrating a capacitor structure of the humidity sensor of FIG. 2A. FIG.
3A to 3G are cross-sectional views illustrating a step of forming a metal lower electrode on a silicon substrate in detail.
Figures 4A-4L are lamination cross-sectional views detailing the step of forming a moisture-impermeable dielectric layer on the bottom electrode.
5A to 5D are laminated cross-sectional views illustrating in detail the step of forming an upper electrode on the moisture-sensitive dielectric layer.
6A to 6E are lamination sectional views showing details of the process of completing the temperature sensor structure started to be formed by FIGS. 5A to 5D.
7 is a perspective view of a temperature sensor and a humidity sensor constituting the integrated sensor;
8 is a top view of a temperature sensor and a humidity sensor constituting the integrated sensor;
9A to 9D are laminated cross-sectional views illustrating in detail the step of forming an upper electrode on a moisture-sensitive dielectric layer according to a second embodiment of the present invention.
10A to 10F are cross-sectional views illustrating a process of forming a temperature sensor on the silicon substrate having the humidity sensor formed of the lower electrode-wetting dielectric layer-upper electrode.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

In describing the present invention, the terms first, second, etc. may be used to describe various elements, but the elements may not be limited by terms. Terms are for the sole purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

It is to be understood that when an element is referred to as being connected or connected to another element, it may be directly connected or connected to the other element, but it may be understood that other elements may be present in between .

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular expressions may include plural expressions unless the context clearly dictates otherwise.

It is to be understood that the term " comprising, " or " comprising " as used herein is intended to specify the presence of stated features, integers, But do not preclude the presence or addition of steps, operations, elements, components, or combinations thereof.

In addition, the shapes and sizes of the elements in the drawings and the like can be exaggerated for clarity.

First, a temperature sensor and a humidity sensor that can be implemented by the integrated sensor according to the present invention will be described.

FIG. 1 illustrates a structure of a temperature sensor using a thermal resistor, which may be embedded in an integrated sensor according to an embodiment of the present invention.

As shown in the figure, the principle of operation of the detection region for temperature measurement is based on the principle that the resistance value of the resistance body is changed according to the temperature change, and a specific calculation for obtaining the resistance value of the resistance heating body with respect to temperature is expressed by Equation 1 below.

FIGS. 2A and 2B illustrate the structure of a capacitive humidity sensor that can be embedded in an integrated sensor according to the teachings of the present invention.

In the figure, the structure of the upper electrode-hermetic dielectric-lower electrode forms a kind of capacitor structure as shown in FIG. 2B, and a specific calculation for obtaining the capacitance value of the capacitor thus formed is shown in the following equation (2).

Where C is the capacitance of the capacitor, ε is the permittivity of the humidifying dielectric, S is the cross-sectional area of the electrode plate,

In the drawing, the principle of operation of the detection region for humidity measurement is to detect the amount of change in capacitance by using the principle that the permittivity of the humidity film is changed, and to measure the humidity therefrom.

A method of manufacturing an integrated sensor according to an embodiment of the present invention includes: forming a base insulating layer on a substrate; Forming a lower electrode of a metal or a conductive organic material in a region where a humidity sensor on the substrate is to be formed; Forming an insulating layer on a region including the lower electrode and a region on the substrate where a temperature sensor is to be formed; Forming a moisture-sensitive dielectric layer on the insulating layer formed on the lower electrode; Forming an upper electrode on the moisture-sensitive dielectric layer; And forming a thermal resistance resist pattern on the insulating layer in a region where the temperature sensor on the substrate is to be formed.

3A through 3G show steps of forming the lower electrode 14 made of a metal on the silicon substrate 10 in detail. The lower electrode 14 serves as a lower electrode of the humidity sensor.

FIG. 3A shows a predetermined cleaning process using sulfuric acid and hydrogen peroxide solution on the silicon substrate 10. FIG.

3B shows a state in which the base insulating film 12 of SiO2 is formed by oxidizing the surface of the substrate 10 to prevent leakage current due to the silicon substrate 10 and to facilitate handling of the substrate.

3C shows a state in which a conductive metal layer for the lower electrode 14 is formed on the base insulating film 12 (SiO 2 oxide film) formed on the silicon substrate 10 by a thin film deposition process. It is advantageous to apply aluminum (Al) to the lower electrode 14 in terms of cost effectiveness, and when using aluminum, it is advantageous to form the lower electrode 14 to have a thickness of about 3,000 angstroms.

FIG. 3D shows a state in which the photoresist 16 is coated on the conductive metal layer. For example, the coating process can be performed with GXR 601 at 3000 rpm at 100 < 0 > C for 1 minute with soft bake.

3E illustrates a process of forming a lower electrode pattern by performing an ultraviolet exposure process on the coated photoresist film 16 and performing a developing process of removing the nonpatterned photoresist to form a photoresist 16 ) Remains. For example, the above exposure conditions are as follows.

Time: 2.5 ~ 3sec, hard contact, Develop: MIF 300k

FIG. 3F shows a state in which the conductive metal layer is etched using the developed photoresist pattern to form the lower electrode 14. FIG. For example, etching can be performed at room temperature for 5 to 8 minutes with a general aluminum etching solution.

3G shows the lower electrode 14 in which the photoresist is completely removed by performing a process of removing the remaining photoresist on the lower electrode 14. [ For example, the photoresist can be cleaned with acetone & methanol & DI water.

4A to 4L illustrate in detail the step of forming the moisture-impermeable dielectric layer 26 on the lower electrode 14.

FIG. 4A shows plasma processing of the substrate on which the lower electrode 14 formed by the FIG. For example, the plasma treatment may be performed at 300 watts for 15 seconds using Asher.

4B shows a state in which an insulating film 22 (SiO2 oxide film) is deposited on the surface of the lower electrode for convenience of subsequent processing, sensor noise reduction, and the like. For example, the PECVD process may be performed at 300 DEG C to form the insulating film 22 of about 3000 angstroms or less.

4C shows a state in which the photoresist 24 is coated on the insulating film 22. FIG. For example, the coating process can be performed with GXR 601 at 3000 rpm at 100 < 0 > C for 1 minute with soft bake.

4D illustrates a process of forming a pattern of an insulating film 22 by performing an ultraviolet exposure process on the coated photoresist film 24 and performing a developing process of removing the nonpatterned photoresist to form a photoresist (24) remains. For example, the exposure conditions are as follows.

Time: 2.5 ~ 3sec, hard contact, Develop: MIF 300k

4E shows a state in which the insulating film 22 is etched using the developed photoresist pattern. For example, etching can be performed with BOE for about one minute at room temperature.

4F shows the lower electrode 14 and the insulating film 22 in which the photoresist is completely removed by performing the process of removing the remaining photoresist after SiO2 etching. For example, the photoresist can be cleaned with acetone & methanol & DI water.

Since the insulating film 22 is not critical to the final product quality, the processes of FIGS. 4B to 4F may be omitted depending on the implementation.

FIG. 4G shows a pretreatment process for forming a humidified dielectric layer for removing foreign substances and the like, and shows the plasma processing of the substrate on which the lower electrode 14 and the insulating film 22 are formed as shown in FIG. 4F. For example, the plasma treatment may be performed at 300 watts for 15 seconds using Asher.

4H shows a state in which a humidity insulating dielectric layer 26 is formed by coating a humidity dielectric (PI) on a substrate 10 on which the lower electrode 14 and the insulating film 22 are disposed. For example, the coating process can be performed with soft bake at 3000 rpm for 1 minute at 110 DEG C and 2 minutes at 130 DEG C.

Fig. 4I shows a state in which the photoresist 28 is coated on the moisture-sensitive dielectric layer 26. Fig. For example, the coating process can be performed with GXR 601 at 3000 rpm at 100 < 0 > C for 1 minute with soft bake.

4J shows a method of forming a moisture-sensitive dielectric layer pattern by performing an ultraviolet ray exposure process on a film of photoresist 28 coated on the moisture-impermeable dielectric layer 26, and performing a development process of removing the non-patterned photoresist, The photoresist 28 remains in a pattern. For example, the exposure conditions are as follows.

Time: 2.5 ~ 3sec, hard contact, Develop: MIF 300k

In the drawing, it can be seen that the photoresist as well as the non-patterned humidity dielectric are removed together with the development process.

4K shows a state in which the photoresist is completely removed by performing the process of removing the remaining pattern forming photoresist after the development. The insulating film 22 is disposed on the lower electrode 14, It can be seen that the moisture-impermeable dielectric layer 26 is disposed. For example, in the removal process, the photoresist can be washed with acetone & methanol & DI water.

FIG. 4L shows curing that improves the characteristics of the moisture-impermeable dielectric layer 26 formed by the above-described process. For example, the curing can be performed in a vacuum chamber at 350 DEG C for 1 hour.

5A to 5D show the step of forming the upper electrode on the moisture-sensitive dielectric layer 26 in detail. In the figure, RT represents a region where a temperature sensor is formed, and RH represents a region where a humidity sensor is formed. On the other hand, only the area where the humidity sensor is formed is shown up to FIG.

5A shows a state in which the first conductive metal layer 61 and the second conductive metal layer 61 for the upper electrode are formed on the silicon substrate 10 on which the moisture-sensitive dielectric layer 26 is formed by a sputtering process and / or a thin- (62) are formed. Gold (Au) is applied to the second conductive metal layer 62 and nichrome (NiCr) is used as the first conductive metal layer 61.

It can be seen that the conductive line on the silicon substrate near the lower electrode and the upper electrode formed in the subsequent process are electrically connected by the conductive metal constituting the first conductive metal layer 61 in the illustrated deposition process. Aluminum as the second conductive metal layer 62 is not preferable because the etchant damages nichrome. As the second conductive metal layer 62, other metals or alloys having high electrical conductivity and easy to be etched, such as platinum (Pt), silver (Ag), copper (Cu)

5B shows a state in which the photoresist 64 is coated on the second conductive metal layer 62. FIG. For example, the coating process can be performed with GXR 601 at 3000 rpm at 100 < 0 > C for 1 minute with soft bake.

FIG. 5C illustrates a process of forming an upper electrode pattern by performing an ultraviolet ray exposure process on the coated photoresist film 64, and performing a developing process of removing the non-patterned photoresist, State. For example, the exposure conditions are as follows.

Time: 2.5 ~ 3sec, hard contact, Develop: MIF 300k

5D shows a state in which the upper electrode is formed by etching the first conductive metal layer 61 and the second conductive metal layer 62 using the developed photoresist pattern. For example, etching may be performed for a predetermined time with a general gold etchant, followed by etching with a nichrome etchant for a predetermined time. Alternatively, etching may be performed for a predetermined time with an etchant capable of etching nichrome and gold together.

In the figure, it can be seen that the nichrome layer as the first conductive metal layer 61 remains unetched in the region where the upper electrode is formed as well as the region where the temperature sensor is formed on the substrate. That is, the nichrome layer forms part of the upper electrode of the humidity sensor and the thermal resistance resistance structure of the temperature sensor, and the two structures are advantageously formed simultaneously in one process. For this, a nichrome layer may be formed as the first conductive metal layer 61 by a sputtering process.

FIGS. 6A to 6E show details of the process of completing the temperature sensor structure formed by FIGS. 5A to 5D.

6A shows a state in which a cleaning process is performed to remove the photoresist remaining on the upper electrode to completely remove the photoresist. For example, the photoresist can be cleaned with acetone & methanol & DI water.

6B shows a state in which the photoresist 66 is coated on the nichrome layer / gold layer. For example, the coating process can be performed with GXR 601 at 3000 rpm at 100 < 0 > C for 1 minute with soft bake.

6C is a cross-sectional view illustrating a process of forming a thermal resistor structure pattern by performing an ultraviolet light exposure process on the coated photoresist film 66, and performing a developing process of removing the pattern photoresist, And the photoresist 66 remains. For example, the above exposure conditions are as follows.

Time: 2.5 ~ 3sec, hard contact, Develop: MIF 300k

6D shows a state in which the gold layer is etched as the second conductive metal layer 62 remaining in the temperature sensor region using the developed photoresist pattern. Although not shown, a process of removing the remaining pattern-forming photoresist after development can be performed. For example, the photoresist can be cleaned with acetone & methanol & DI water.

FIG. 6E is a cross-sectional view showing a state in which an insulating film (SiO2 oxide film) 68-1 and 68-2 is deposited, an exposure / development process using a photoresist, and a photoresist cleaning process are performed to form an insulating film 68-1 State.

For example, the PECVD process may be performed at 300 DEG C to form an insulating film of about 3000 angstroms, and the photoresist coating process may be performed with GXR 601 at 3000 rpm at 100 DEG C for 1 minute by soft bake, After exposure in accordance with exposure conditions (Time: 2.5 to 3 sec, hard contact, Develop: MIF 300k), the photoresist can be removed by etching with BOE at room temperature for about one minute or so.

In the figure, the reference unit humidity sensor module for generating the humidity sensing signal for shutting off the humidity is also intercepted by the insulating film 68-2 together with the temperature sensor. However, the reference unit humidity sensor module is omitted in terms of production cost It is advantageous.

The integrated sensor fabricated according to the above-described manufacturing method comprises a silicon substrate 10; A lower electrode 14 formed of a metal or a conductive organic material in the humidity sensor arrangement region on the silicon substrate 10; An insulation layer (22) formed on the temperature sensor arrangement region of the substrate (10) and the lower electrode (14); A moisture-impermeable dielectric layer (26) formed on the insulating layer (22) above the lower electrode (14) in the humidity sensor arrangement region of the substrate (10); An upper electrode formed on the moisture-sensitive dielectric layer (26); And a thermal sensitive resistor pattern formed on an insulating layer of the temperature sensor arrangement region of the substrate (10)

The upper electrode includes a first conductive layer (the first conductive metal layer 61 in the drawing) formed on the moisture-impermeable dielectric layer 26 and a second conductive layer Layer 62), and the first conductive layer is made of the same material as the thermosensitive resistor pattern.

FIG. 7 is a perspective view of the temperature sensor and the humidity sensor of the integrated sensor, and FIG. 8 is a top view of the temperature sensor and the humidity sensor of the integrated sensor.

In the integrated sensor shown in the figure, a humidity sensor and a temperature sensor are integrated on one silicon substrate. The humidity sensor is a capacitive humidity sensor including a lower electrode, a moisture-sensing dielectric layer and an upper electrode. The temperature sensor is a nichrome It is understood that the present invention is implemented in a thermal resistance pattern having an extended resistance length.

According to the embodiment, the upper electrode of the humidity sensor may be formed with a predetermined through-hole pattern so that the moisture-permeated air can contact the moisture-sensitive dielectric layer. For example, the through-hole pattern may be formed by photolithography and etching processes similar to those described above.

Since the integrated sensor shown in the figure simultaneously forms the temperature-sensitive resistance pattern and the upper electrode of the humidity sensor in the same process, there is an advantage that the process cost and time can be greatly reduced.

To this end, the upper electrode of the humidity sensor of this embodiment is formed in a structure in which the first conductive layer and the second conductive layer are stacked in order, and the first conductive layer in contact with the moisture-sensitive dielectric layer is formed of a metal having a thermal resistance- .

The conductive line on the side of the silicon substrate near the lower electrode 14 and the upper electrode of the humidity sensor are electrically connected by the conductive metal constituting the first conductive layer. Aluminum as the second conductive layer is not preferable because the etchant damages nichrome. In addition to gold, the second conductive layer may be made of another metal or alloy having high electrical conductivity and easy to be etched, such as platinum (Pt), silver (Ag), copper (Cu)

In the method of manufacturing an integrated sensor according to the second embodiment, the steps of forming the lower electrode and the moisture-sensing dielectric layer of the humidity sensor are similar to those of the first embodiment, and thus a duplicate description will be omitted. That is, in the second embodiment, the process of forming the upper electrode and the temperature sensor of the humidity sensor will be described in detail.

9A to 9D show the step of forming the upper electrode 32 on the moisture-sensitive dielectric layer 26 in detail. In the figure, RT represents a region where a temperature sensor is formed, and RH represents a region where a humidity sensor is formed.

9A shows a state in which a conductive metal layer for the upper electrode 32 is formed on a silicon substrate 10 on which the moisture-sensitive dielectric layer 26 is formed by a thin film deposition process. The upper electrode 32 is superior in terms of cost effectiveness to the application of aluminum (Al). In the illustrated deposition process, it can be seen that the conductive line on the side of the silicon substrate 10 in the vicinity of the lower electrode is electrically connected by the conductive metal on which the upper electrode 32 formed in the subsequent process is deposited.

FIG. 9B shows a state in which the photoresist 34 is coated on the conductive metal layer. For example, the coating process can be performed with GXR 601 at 3000 rpm at 100 < 0 > C for 1 minute with soft bake.

9C shows a process of forming an upper electrode pattern by performing an ultraviolet ray exposure process on the coated photoresist film 34 and performing a developing process of removing the nonpatterned photoresist to form a photoresist 34 with the upper electrode pattern, Is present. For example, the above exposure conditions are as follows.

Time: 2.5 ~ 3sec, hard contact, Develop: MIF 300k

FIG. 9D shows a state in which the conductive metal layer is etched using the developed photoresist pattern to form the upper electrode 32. FIG. For example, etching can be performed at room temperature for 5 minutes to 8 minutes with a general aluminum etching solution. Although not shown, a cleaning process may be performed in which the photoresist remaining on the upper electrode 32 is removed, thereby completely removing the photoresist. For example, the photoresist can be cleaned with acetone & methanol & DI water.

10A to 10F illustrate a process of forming a temperature sensor on the silicon substrate 10 having the humidity sensor formed of the lower electrode 14, the humidity sensing dielectric layer 26, and the upper electrode 32 will be.

10A shows a state in which a nichrome (NiCr) layer 42 is formed as a layer of a thermal resistor material in a region where a temperature sensor on the silicon substrate is disposed in a sputtering process. Nichrome is excellent in cost-effectiveness as a thermosensitive layer, and can be formed to have a thickness of about 200 ohongs long or more. It is noted that the nichrome layer 42 for the temperature sensor in the figure is laminated on the surface of the insulating layer 22 formed according to Figs. 4A to 4F.

FIG. 10B shows a state in which the photoresist 46 is coated on the nichrome layer 42. FIG. For example, the coating process can be performed with GXR 601 at 3000 rpm at 100 < 0 > C for 1 minute with soft bake.

10C is a cross-sectional view illustrating a process of forming a thermoresistant structure pattern by performing an ultraviolet exposure process on the coated photoresist film 46 and performing a development process of removing the non-patterned photoresist, 46 remain. For example, the above exposure conditions are as follows.

Time: 2.5 ~ 3sec, hard contact, Develop: MIF 300k

10D shows a state in which the nacre layer 42 is etched using the developed photoresist pattern to form the thermosensitive resistor structure. For example, etching may be performed for a predetermined time with a general nichrome etching solution.

FIG. 10E shows a state in which the photoresist is completely removed by performing a process of removing remaining pattern-forming photoresist after development. For example, in the removal process, the photoresist can be washed with acetone & methanol & DI water.

FIG. 10F is a cross-sectional view showing a state in which an insulating film 48-1 is formed as a protective film for the temperature sensor by performing vapor deposition of insulating films 48-1 and 48-2 (SiO2 oxide film), exposure / development using a photoresist, State.

For example, the PECVD process may be performed at 300 DEG C to form an insulating film of about 3000 angstroms. The photoresist coating process may be performed by soft bake at 3000 DEG C at 3000 DEG C for 1 minute using GXR 601, (Time: 2.5 to 3 sec, hard contact, Develop: MIF 300k), and then the photoresist can be removed by etching with BOE at room temperature for about one minute or so.

In the figure, the reference unit humidity sensor module for generating the humidity sensing signal for shutting off the humidity is also intercepted by the insulating film 48-2 together with the temperature sensor. However, the reference unit humidity sensor module is omitted in terms of production cost It is advantageous.

The integrated sensor fabricated according to the above-described manufacturing method comprises a silicon substrate 10; A base insulating layer 12 formed on the entire area of the silicon substrate 10; A lower electrode 14 formed of a metal or a conductive organic material in the humidity sensor arrangement region on the silicon substrate 10; An insulation layer (22) formed on the temperature sensor arrangement region of the substrate (10) and the lower electrode (14); A moisture-impermeable dielectric layer (26) formed on the insulating layer (22) above the lower electrode (14) in the humidity sensor arrangement region of the substrate (10); An upper electrode (32) formed on the moisture-sensitive dielectric layer (26); And a thermal resistance pattern formed on the insulating layer of the temperature sensor arrangement region of the substrate 10. [

7 is a perspective view of a temperature sensor and a humidity sensor of the integrated sensor of the present embodiment, and FIG. 8 is a perspective view of the integrated sensor of the present embodiment. A top view for the temperature sensor and the humidity sensor.

In the integrated sensor shown in the figure, a humidity sensor and a temperature sensor are integrated on one silicon substrate. The humidity sensor is a capacitive humidity sensor including a lower electrode, a moisture-sensing dielectric layer and an upper electrode. The temperature sensor is a nichrome It is understood that the present invention is implemented in a thermal resistance pattern having an extended resistance length.

The temperature sensor of the illustrated integrated sensor is formed on the two insulating layers 12 and 22 and disposed at a position sufficiently high from the silicon substrate 10 to effectively prevent noise from the silicon substrate 10 And is closer to the air to be measured, which has the advantage of increasing the accuracy of the temperature measurement. According to the embodiment, the upper electrode of the humidity sensor may be formed with a predetermined through-hole pattern so that the moisture-permeated air can contact the moisture-sensitive dielectric layer. For example, the through-hole pattern may be formed by photolithography and etching processes similar to those described above.

It should be noted that the above-described embodiments are intended to be illustrative, not limiting. In addition, it will be understood by those of ordinary skill in the art that various embodiments are possible within the scope of the technical idea of the present invention.

10: substrate 12: insulating layer
14: lower electrode 26: moisture-sensitive dielectric layer
32: upper electrode 42: nichrome layer

Claims (9)

Forming a lower electrode of a metal or a conductive organic material in a region where a humidity sensor on the substrate is to be formed;
Forming a humidifying dielectric layer on the lower electrode;
Forming a first conductive layer in a region including the lower electrode and the moisture-sensitive dielectric layer and in a region where the temperature sensor on the substrate is to be formed;
Forming a second conductive layer on the first conductive layer;
Forming the first electrode of the temperature sensor and the upper electrode of the humidity sensor by removing the first conductive layer and the second conductive layer except for the moisture-sensitive dielectric layer upper region and the region where the temperature sensor is to be formed; And
Removing the second conductive layer on the first conductive layer forming the thermal resistance pattern of the temperature sensor
Lt; / RTI >
The upper electrode includes:
A first conductive layer formed on the moisture-impermeable dielectric layer, and a second conductive layer formed on the first conductive layer,
The first conductive layer may be made of the same material as the thermal resistor,
The first conductive layer and the second conductive layer may be made of different materials so that the first conductive layer is not simultaneously removed when the second conductive layer is removed,
Wherein the first conductive layer is nichrome (NiCr)
Wherein the second conductive layer is at least one or more of gold (Au), platinum (Pt), silver (Ag), copper (Cu)
A base insulating layer formed on the entire area of the substrate between the substrate and the lower electrode,
Further comprising the steps of:
The method according to claim 1,
Forming an insulating layer between the lower electrode and the moisture-
Further comprising the steps of:
The method according to claim 1,
Wherein the first conductive layer is formed by sputtering a metal having a thermal resistance characteristic.
delete A lower electrode formed of a metal or a conductive organic material in a humidity sensor arrangement region on the substrate;
An insulating layer formed on the temperature sensor arrangement region of the substrate and the lower electrode;
A moisture-sensitive dielectric layer formed on the insulating layer above the lower electrode of the humidity sensor arrangement region of the substrate;
An upper electrode formed on the moisture-sensitive dielectric layer;
A thermal resistance resistance pattern formed on the insulating layer of the temperature sensor arrangement region of the substrate
/ RTI >
The upper electrode includes:
A first conductive layer formed on the moisture-impermeable dielectric layer, and a second conductive layer formed on the first conductive layer,
The first conductive layer may be made of the same material as the thermal resistor,
The first conductive layer and the second conductive layer may be made of different materials so that the first conductive layer is not simultaneously removed when the second conductive layer is removed,
Wherein the first conductive layer is nichrome (NiCr)
Wherein the second conductive layer is at least one or more of gold (Au), platinum (Pt), silver (Ag), copper (Cu)
A base insulating layer formed on the entire area of the substrate between the substrate and the lower electrode,
Further comprising an integrated sensor.
delete delete 6. The method of claim 5,
Wherein the upper electrode is formed with a predetermined through-hole pattern so that the moisture-permeated air can contact the moisture-sensitive dielectric layer.
delete

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