CN100384083C - 可减小增益波动的压控振荡器 - Google Patents
可减小增益波动的压控振荡器 Download PDFInfo
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- CN100384083C CN100384083C CNB2004100099564A CN200410009956A CN100384083C CN 100384083 C CN100384083 C CN 100384083C CN B2004100099564 A CNB2004100099564 A CN B2004100099564A CN 200410009956 A CN200410009956 A CN 200410009956A CN 100384083 C CN100384083 C CN 100384083C
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- capacitor
- controlled oscillator
- coupling capacitance
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- 230000008878 coupling Effects 0.000 claims abstract description 28
- 238000010168 coupling process Methods 0.000 claims abstract description 28
- 238000005859 coupling reaction Methods 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 abstract description 20
- 238000000034 method Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2004100099564A CN100384083C (zh) | 2004-12-03 | 2004-12-03 | 可减小增益波动的压控振荡器 |
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CNB2004100099564A CN100384083C (zh) | 2004-12-03 | 2004-12-03 | 可减小增益波动的压控振荡器 |
Publications (2)
Publication Number | Publication Date |
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CN1614874A CN1614874A (zh) | 2005-05-11 |
CN100384083C true CN100384083C (zh) | 2008-04-23 |
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CNB2004100099564A Expired - Lifetime CN100384083C (zh) | 2004-12-03 | 2004-12-03 | 可减小增益波动的压控振荡器 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1333522C (zh) * | 2006-04-14 | 2007-08-22 | 清华大学 | 片上cmos数控lc振荡器 |
CN100578913C (zh) * | 2006-12-21 | 2010-01-06 | 凌阳科技股份有限公司 | 一种使用于压控振荡器中的一可变电容器 |
US8773211B2 (en) * | 2011-11-25 | 2014-07-08 | Intel Mobile Communications GmbH | Common mode rejection circuit |
CN102710257B (zh) * | 2012-06-13 | 2014-12-17 | 海能达通信股份有限公司 | 一种对频率锁定的方法、一种压控振荡器以及频率产生单元 |
CN110620581A (zh) * | 2019-10-10 | 2019-12-27 | 上海磐启微电子有限公司 | 一种用于射频收发系统的抑制温漂的无晶振压控振荡器 |
CN113364454A (zh) * | 2020-03-04 | 2021-09-07 | 川土微电子(深圳)有限公司 | 压控振荡器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1152817A (zh) * | 1995-09-26 | 1997-06-25 | 三星电子株式会社 | 用于数字无线通信系统上变频器/下变频器的压控振荡器 |
CN1371167A (zh) * | 2001-02-12 | 2002-09-25 | 三星电子株式会社 | 切换压控振荡器振荡频带的压控可变调谐电路 |
JP2004048589A (ja) * | 2002-07-15 | 2004-02-12 | Matsushita Electric Ind Co Ltd | 電圧制御発振器 |
US20040150483A1 (en) * | 2003-01-30 | 2004-08-05 | Je-Kwang Cho | Voltage controlled oscillators with selectable oscillation frequencies and methods for adjusting the same |
-
2004
- 2004-12-03 CN CNB2004100099564A patent/CN100384083C/zh not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1152817A (zh) * | 1995-09-26 | 1997-06-25 | 三星电子株式会社 | 用于数字无线通信系统上变频器/下变频器的压控振荡器 |
CN1371167A (zh) * | 2001-02-12 | 2002-09-25 | 三星电子株式会社 | 切换压控振荡器振荡频带的压控可变调谐电路 |
JP2004048589A (ja) * | 2002-07-15 | 2004-02-12 | Matsushita Electric Ind Co Ltd | 電圧制御発振器 |
US20040150483A1 (en) * | 2003-01-30 | 2004-08-05 | Je-Kwang Cho | Voltage controlled oscillators with selectable oscillation frequencies and methods for adjusting the same |
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Publication number | Publication date |
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CN1614874A (zh) | 2005-05-11 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORAT |
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Effective date of registration: 20110315 Address after: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Co-patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Patentee after: Peking University Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Patentee before: Peking University |
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Granted publication date: 20080423 |
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CX01 | Expiry of patent term |