CN100380587C - Method for producing amorphous silicon thermal imaging detector micro-structure with self-supporting - Google Patents
Method for producing amorphous silicon thermal imaging detector micro-structure with self-supporting Download PDFInfo
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- CN100380587C CN100380587C CNB2006101044341A CN200610104434A CN100380587C CN 100380587 C CN100380587 C CN 100380587C CN B2006101044341 A CNB2006101044341 A CN B2006101044341A CN 200610104434 A CN200610104434 A CN 200610104434A CN 100380587 C CN100380587 C CN 100380587C
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Abstract
The present invention provides method for making self -supported non-crystalline silicon thermal imaging decetor micro architecture on silicon wafer, adopting non-crystalline silicon as infrared sensitized material to make non-refrigeration focal plane infrared thermal imaging detect array. It contains plating certain of thickeness PI glue as sacrificial layer, adopting PECVD method to make low stress having self supporting capacity non-crystalline silicon sensitivity film, solidifying and vulcanization treatment to PI glue by fast cycle heat treatment, finally adopting plasma reaction etching to remove sacrificial layer PI glue and the rest photoresist to obtain overhead structure self supported non-crystalline silicon non - refrigeration focal plane infrared thermal imaging detect array microarchitecture.
Description
Technical field
The present invention relates to infrared thermal imaging Detection Techniques field, further relating to adopt amorphous silicon to make non-refrigeration focal plane infrared thermal imaging detection array hanging structure technical field as infrared-sensitive material, specifically is a kind of manufacture method with amorphous silicon thermal imaging detector micro-structure of self-supporting.
Background technology
Infrared thermal imaging detector is that infrared radiation produces the photoelectric sensor of response to external world, is the core of infrared thermal imaging detection system.The application of infrared thermal imaging detector has expanded to the more wide civil area that comprises that industrial measurement and control, medical treatment detect, take precautions against natural calamities etc. gradually from initial Military Application.Infrared thermal imaging detector is based on that various effects that sensitive material is subjected to being produced behind the infrared radiation come infrared intensity is detected.According to the operation principle branch, Infrared Detectors can be divided into photon detector and thermal detector two big classes.Under ultrared irradiation, produce electric charge carrier in the semi-conducting material, utilize detector that the electric charge that produces is collected and processing and amplifying, this is the basic functional principle of photon detector.Though refrigeration type Infrared Detectors can obtain high detectivity,, must utilize chillers such as Dewar bottle that liquid nitrogen temperature is provided for dark current and the noise that suppresses detector.This has caused refrigeration type Infrared Detectors cost height, bulky critical defect, makes refrigeration type Infrared Detectors only be used for military field basically, and can't go deep into civil area.Temperature changed after infrared detector cell absorbed infrared radiation, and the variation of measuring the senser physical property that is caused by variations in temperature comes infrared radiation is surveyed, and this is the basic principle of thermal detector.Thermal detector need not chilling unit, can work under the room temperature environment, at aspects such as low cost, low-power consumption, miniaturization and reliabilities remarkable advantages is arranged all, become the focus of the various countries military and each major company research at present, and demonstrated huge market potential.At present except being applied to military fields such as traditional missile guidance, target recognition and tracking, night vision device, at nighttime driving, take precautions against natural calamities, civil area such as medical diagnosis also obtained increasing attention.
At present, external non-refrigeration focal plane Infrared Detectors mainly adopts two kinds of different technological approaches, and instant heating is released electric explorer focal plane array and bolometer focal plane array, and they have all been obtained, and important techniques breaks through and application.
The pyroelectricity focal plane array has formed product at present, is applied aspect military and civilian.The pottery that the infrared detector material of the non-refrigeration focal plane array of the electrothermic type of American TI Company is made up of BST (Chinese name) with pyroelectric effect, American TI Company take aim at night tool 200 serial video cameras be mainly used in alert with and the automobile nighttime driving, developing the thermoelectric non-refrigeration focal plane array of 640 * 480 pixels at present.U.S. ElectroPhysics company has developed the thermoelectric barium strontium titanate (Ba of civilian non-refrigeration nineteen ninety-five
xSr
1-xTiO
3, BST) focal plane thermal imager.The non-refrigeration focal plane array of the mixing pyroelectricity of Britain GMMT company adopts zirconia titanate lead (Pb
xZr
1-xTiO
3PZT) pyroelectric ceramic detector, developed the detector array of 384 * 288 pixels, Lockheed Martin's infrared imaging system LTC500 of company video camera is used for medical research and medical diagnosis, and the IR Snapshot video camera of IRSolutions company is used for detecting and preventive maintenance all adopts pyroelectricity focal plane array product.
The application of bolometer focal plane array roughly comprises: vanadium oxide bolometer focal plane array, propose in the early 1990s by U.S. Honeywell transducer and system development center, and succeeded in developing corresponding thermal imaging system in recent years; Amorphous silicon bolometer focal plane array, Australian science and techniques of defence are affixed one's name to and are adopted amorphous, crystallite and polycrystalline as thermistor material, succeed in developing the non-refrigeration focal plane array of one chip; France SOFRADIR company releases a kind of non-refrigeration 320 * 240 pixel bolometer Infrared Detectorss based on amorphous silicon technology recently; The thermopile focal plane array, Japan Defense Agency's technical research and developmental research institute developed 128 * 128 pixel thermopile thermal imagery transducers in 1994; People such as D.S.Tezcan had proposed a kind of bolometer based on the standard CMOS manufacture craft in 1999, and this detector as the sensitive for infrared radiation unit, has utilized the temperature characterisitic of silicon single crystal resistance that infrared radiation is surveyed with n trap monocrystalline resistance; The THV570 of Agema company adopts the bolometer technology and in the product that comes into the market recently; The new Hot shot image-forming radiation measuring instrument of Amber company has adopted non-cooled detector technology; The Hot shot of electronics corporation of Japan Airlines (Avio) development has also adopted the bolometer technology of Amber company; U.S. EIect rophysics company utilizes PV320, has developed jointly fire-fighting thermal imager LifesightPlus with Lifesight Fire Research company, is used for fire control and disaster rescue; U.S. Gileta company made alert with non-refrigeration bolometer imager in 1996.
Bolometer is a kind of thermosensitive resistance type detector, at present after deliberation the bolometer of making by sensitive materials such as vanadium oxide, polysilicon, amorphous silicon, amorphous germanium, poly-SiGe, metal material and high temperature superconducting materia YBaCuO, and existing thermal imaging system based on the vanadium oxide bolometer is sold.Early 1990s, Honeywell company has at first developed the microbridge formula bolometer that is made of the vanadium oxide thermistor.The responsiveness of bolometer is than thermoelectric pile type height, and manufacture craft is simpler than thermoelectric type, and has DC response, need not chopper, though this detector development early, but still is the focus of present infrared detection technique research.Because vanadium oxide and YBaCuO are not the CMOS process materials of standard; Polysilicon, amorphous silicon, poly-SiGe are owing to being that the amorphous material has higher noise; The noise of metal material is very low, but the responsiveness of detector is low excessively; So the bolometer emphasis of research at present is the compatibility of manufacture craft and IC common process, realize that monolithic is integrated.The major advantage of amorphous silicon bolometer has: 1, thermal time constant is low; 2, temperature-sensitivity coefficient height; 3, technology is simple; 4, preparation temperature is low, can be compatible fully with the CMOS silicon technology of standard; 5, cost is low, and risk is little; 6, high responsiveness; 7, high infrared radiation absorptivity.
People such as D.S.Tezcan had proposed a kind of micro-metering bolometer based on the standard CMOS manufacture craft in 1999, and this detector as the sensitive for infrared radiation unit, has utilized the temperature characterisitic of silicon single crystal resistance that infrared radiation is surveyed with n trap monocrystalline resistance.Utilize the method for electrochemical corrosion to erode the substrate of sensing unit below during making, form thermal insulation structure.This structure can be compatible substantially with standard CMOS process, but fill factor, curve factor only is 13%, and need special circuit and the equipment of design to realize four electrode chemical corrosions, increased technology and realized difficulty.The people such as T.Ishikaw of Japanese advanced technology research and development centre in 1999 have proposed non-refrigeration infrared detector based on SOI according to the temperature characterisitic of diode current-voltage, and 320 * 240 pixel arrays have been made, realized the thermal imaging of array, but because the SOI manufacture craft is still immature at present, cost of manufacture is higher.2003, A.Torres etc. utilize amorphous germanium to make a kind of novel micro-metering bolometer, this detector as sensing unit, as mechanical support layer, utilizes body silicon etching technology to obtain the heat insulating construction of detector with hot oxygen SiO2 and LPCVD-Si3N4 composite bed with amorphous germanium resistance.Because the temperature coefficient of resistance of amorphous germanium material is up to 4%, this detector can obtain higher responsiveness, but because this detector needs the bulk silicon etching technology, higher to the uniformity requirement of silicon chip, use more widely thereby limited it.The researcher of microelectronics research institute of Tsing-Hua University has proposed a kind of non-refrigeration infrared detector based on amorphous silicon film transistor, and has applied for national inventing patent.Have very high channel current temperature coefficient, add the amplification of thin-film transistor, thereby can obtain higher responsiveness, the making of this detector is fully based on conventional cmos technology.But this structure fabrication step is many, complex technical process.
Research for the non-refrigeration infrared detector of micro-metering bolometer formula belongs to the field, forward position, and external data also seldom.
At present, there are Kunming physics institute, device research institute of Xi'an Communications University, 44 in Chongqing, Shanghai metering physics institute, Microelectronic Institute of Xian Electronics Science and Technology University, the Central China University of Science and Technology and Lanzhou physics institute etc. in the unit of the non-refrigeration of domestic research focal plane Infrared Detectors.They have all done number of research projects at aspects such as the preparation of range detector sensitive material and structure, panel detector structure, signal read circuits.But up to the present, yet there are no the relevant report of producing the non-refrigeration of the amorphous silicon with self-supporting focal plane Infrared Detectors hanging structure.
Project team of the present invention finds report or the document closely related and the same with the present invention more as yet to domestic and international patent documentation and the journal article retrieval of publishing.
Summary of the invention
The objective of the invention is to overcome the shortcoming of above-mentioned technology or method existence, a kind of simplification manufacture craft is provided; Improve the thermal insulation properties of detector, the making that improves detector sensitivity has the manufacture method of the amorphous silicon thermal imaging detector micro-structure of self-supporting, the unsettled micro-structural that adopts this method to make, the fill factor, curve factor height, amorphous silicon wherein is the infrared thermal imaging sensitive material, is again the material of probe unit support arm.Manufacture method technology is simple, stable, good reproducibility, be applicable to the needs of actual industrial production.Make to such an extent that have the non-refrigeration of an amorphous silicon focal plane infrared thermal imaging detector micro structure array of self-supporting, thereby improved the thermal insulation properties of detector, improved amorphous silicon thermal imaging detector working stability, test good reproducibility that detector sensitivity makes preparation based on this.
Below technical scheme of the present invention is elaborated
The present invention is a kind of manufacture method with amorphous silicon thermal imaging detector micro-structure of self-supporting.
Realization of the present invention is: the device chip micro-structural with non-refrigeration infrared thermal imaging detector of self supporting structure adopts and is coated with certain thickness polyimides (PI glue) as the sacrifice layer of making the non-refrigeration infrared thermal imaging detector hanging of amorphous silicon micro-structural on silicon chip; Adopt curing and the cure process of rapid thermal treatment to polyimides; Using plasma strengthens the amorphous silicon sensitive thin film that chemical gaseous phase depositing process (the English PECVD of abbreviation method) is made low stress, had the self-supporting ability; The using plasma reactive ion etching is removed the sacrifice layer polyimides,
The step of specific practice is as follows:
Step 1, employing RCA technology are cleaned the single-sided polishing silicon chip, take out with high pure nitrogen silicon chip to be dried up, and are placed in the baking oven then and dry;
Step 2, on silicon chip preparation PI glue sacrifice layer, adopt the method preparation of whirl coating, the thickness of polyimides is 1.7～2.2 μ m;
Step 3, employing quick heat treatment method are cured rapid thermal treatment to polyimides, and the time is 1 hour, and temperature is 170 ℃;
Step 4, make the figure of PI glue via hole, resist coating on polyimides is used photo-etching machine exposal then, again with developing liquid developing and corrode polyimides, corrodes remaining photoresist with acetone again, obtains the figure of polyimides via hole;
Step 5, adopt the quick heat treatment method to the polyimides rapid thermal treatment of hardening, temperature is 250 ℃, and the time is half an hour;
Step 6, the amorphous silicon sensitive thin film that adopts PECVD to prepare low stress, have the self-supporting ability, the thickness of sensitive thin film is 180～300nm;
The method of step 7, employing whirl coating, exposure, development is made the photoresist figure of required micro-structural;
Step 8, using plasma reactive ion etching are made the figure of amorphous silicon membrane;
Step 9, using plasma reactive ion etching are removed sacrificial layer material polyimides and remaining photoresist, make amorphous silicon thermal imaging detection array hanging structure.
Under the selected situation of amorphous silicon as the heat-sensitive material of non-refrigeration bolometer infrared thermal imaging detector, the structure of device influences the performance of detector to a great extent.The hanging structure of device is reasonable in design, and its fill factor, curve factor is just high more, and the thermal insulation of device is also good more, and INFRARED ABSORPTION efficient is just high more, and the intensification value of amorphous silicon membrane is just big more, and the temperature-sensitivity coefficient of device is just high more.For this reason, need to make the hanging structure of amorphous silicon membrane.In patent of the present invention, a kind of new Type of Uncooled Infrared Detector that adopts amorphous silicon membrane as senser has been proposed, it has Floating amorphous silicon membrane structure, and it is a kind of suspension structure of self-supporting, that is to say, amorphous silicon is the infrared thermal imaging sensitive material, is again the material of probe unit support arm.
In order to make hanging structure, just need select suitable sacrificial layer material for use, a lot of as the sacrificial layer material of making figure and hanging structure, such as polyimides, photoresist and magnesium oxide etc., patent of the present invention has been selected for use, not only the cost of material is low, this is mainly still because the corrosive nature of polyimides uniqueness, under K cryogenic treatment, directly just can remove with developer solution, and it can satisfy the subsequent treatment temperature, and its removal method is also simple, and promptly the available plasma reaction etching in sclerosis back realizes.
Will consider the selection of etching gas when the using plasma reactive ion etching, should consider that mainly the ion of this gas reaction generation and the other materials in the device fabrication processes do not react, patent of the present invention adopts SF
6Gas comes the reactive ion etching amorphous silicon membrane, adopts O
2Gas comes reactive ion etching polyimides and photoresist.
Because adopting, the present invention on silicon chip, is coated with certain thickness polyimides as the sacrifice layer of making the non-refrigeration infrared thermal imaging detector hanging of amorphous silicon micro-structural; Adopt curing and the cure process of rapid thermal treatment to PI glue; Adopt the method making low stress of PECVD, amorphous silicon sensitive thin film with self-supporting ability; The using plasma reactive ion etching is removed the technical scheme of sacrifice layer polyimides, solved the complex process that exists in the manufacture method of thermal imaging detector micro-structure, the cost height, the fill factor, curve factor of the thermal imaging detector of made is low, hanging structure can not self-supporting, the problem that is difficult to industrial practical application.Adopt the detector sensitivity height of made of the present invention, the fill factor, curve factor height, the self-supporting hanging structure, sacrificial layer material can satisfy the needs of subsequent treatment process temperature, and the removal method is simple, and the compatibility between other structures might as well; Amorphous silicon is the infrared thermal imaging sensitive material, is again the material of probe unit support arm, and this method technology is simple, stable, good reproducibility, be applicable to the needs of actual industrial production.
Description of drawings:
Fig. 1 is the process chart of the non-refrigeration of the making amorphous silicon focal plane infrared thermal imaging detection array hanging structure of patent of the present invention;
Fig. 2 is the SEM photo of the non-refrigeration of the amorphous silicon focal plane infrared thermal imaging detection array hanging structure section of patent of the present invention;
Fig. 3 is the photo of the non-refrigeration of the amorphous silicon focal plane infrared thermal imaging detection array pixel of the employing microscope photographing of patent of the present invention.
Embodiment:
Below in conjunction with accompanying drawing patent of the present invention is elaborated.
Embodiment 1:
Referring to Fig. 1, the device chip micro-structural of making the non-refrigeration infrared thermal imaging detector with self supporting structure mainly is to adopt to be coated with certain thickness PI glue as the sacrifice layer of making the non-refrigeration infrared thermal imaging detector hanging of amorphous silicon micro-structural on silicon chip; Adopt curing and the cure process of rapid thermal treatment to PI glue; Adopt the method making low stress of PECVD, amorphous silicon sensitive thin film with self-supporting ability; The using plasma reactive ion etching is removed sacrifice layer PI glue,
The step of specific practice is as follows:
Step 1, employing RCA technology are cleaned the single-sided polishing silicon chip, take out with high pure nitrogen silicon chip to be dried up, and are placed in the baking oven then and dry;
Step 2, on silicon chip preparation PI glue sacrifice layer, adopt the method preparation of whirl coating, the thickness of PI glue is 1.7 μ m;
Step 3, employing quick heat treatment method are cured rapid thermal treatment to PI glue, and the time is 1 hour, and temperature is 170 ℃;
Step 4, make the figure of PI glue via hole, resist coating on PI glue is used photo-etching machine exposal then, again with developing liquid developing and corrode PI glue, corrodes remaining photoresist with acetone again, obtains the figure of PI glue via hole;
Step 5, adopt the quick heat treatment method to the PI glue rapid thermal treatment of hardening, temperature is 250 ℃, and the time is half an hour;
Step 6, the amorphous silicon sensitive thin film that adopts PECVD to prepare low stress, have the self-supporting ability, the thickness of sensitive thin film is 180nm;
The method of step 7, employing whirl coating, exposure, development is made the photoresist figure of required micro-structural;
Step 8, using plasma reactive ion etching are made the figure of amorphous silicon membrane;
Step 9, using plasma reactive ion etching are removed sacrificial layer material PI glue and remaining photoresist, make amorphous silicon thermal imaging detection array hanging structure.
The present invention that puts it briefly adopts RCA technology to clean the single-sided polishing silicon chip exactly, adopt the method for whirl coating on silicon chip, to prepare certain thickness sacrificial layer material one polyimides (PI glue) film then, adopt the heat treatment method that solidifies to handle polyimide film, photoresist is got rid of in employing, photoetching, the method of developing forms the hole of detector cells on polyimide film, in order to making the electrode supporting leg to micro-structural, adopt the heat treatment method of sclerosis to handle polyimide film again, the method that using plasma strengthens chemical vapour deposition (CVD) (PECVD) is coated with certain thickness amorphous silicon membrane, photoresist is got rid of in employing, photoetching, the method of developing is produced the photoresist figure of required micro-structural, the using plasma reactive ion etching is removed the amorphous silicon membrane that exposes in the figure, last using plasma reactive ion etching is removed sacrificial layer material and remaining photoresist, obtains the non-refrigeration of the amorphous silicon focal plane infrared thermal imaging detection array micro-structural of hanging structure.The non-refrigeration of the amorphous silicon focal plane infrared thermal imaging detection array hanging structure that adopts this method to make is functional, and technology is simple, stable, good reproducibility, be applicable to actual industrial production.
Embodiment 2: process conditions, making step, use equipment are all with embodiment 1, and difference is that the thickness of PI glue in the step (2) is 2.2 μ m; The thickness of sensitive thin film is 300nm.
Embodiment 3: process conditions, making step, use equipment are all with embodiment 1, and difference is that the thickness of PI glue in the step (2) is 2 μ m; The thickness of sensitive thin film is 200nm.Functional with the non-refrigeration of the amorphous silicon with self-supporting focal plane infrared thermal imaging detection array hanging structure that the method is made, and technology is simple, stable, good reproducibility.Fig. 2 is the SEM photo of the non-refrigeration of the amorphous silicon focal plane infrared thermal imaging detection array hanging structure section of this method making.Zhi Bei detector comprises that a spacing is that 45 μ m, duty factor are higher than 80% 160 * 120 pixel infrared focal plane arrays based on this, and its operation wavelength is 8-12 μ m.The bolometer of this non-refrigeration micro bolometer Infrared Detectors is made of the doped amorphous silicon microbridge thermometer rete of one deck extremely thin (0.2 μ m).This structure is not with extra support rete.Microbridge is made in sacrifices on the polyimide layer.In the end in the one procedure, after polyimides is etched removal, just form one the 2 high vacuum chamber of μ m between microbridge and the reading circuit, so just can strengthen absorption the infrared radiation of 10 mum wavelengths.Concrete photo is seen Fig. 2 and Fig. 3.
Embodiment 4: make the method for the non-refrigeration of the amorphous silicon focal plane infrared thermal imaging detection array hanging structure with self-supporting, its specific practice is: cleaning silicon chip; Adopt the method for whirl coating to prepare PI glue; The curing rapid thermal treatment of PI glue; Get rid of photoresist; Photoetching; Adopt developing method on polyimide film, to dig the hole of detector cells electrode supporting leg; Adopt acetone to remove remaining photoresist; The sclerosis rapid thermal treatment of PI glue; Adopt the PECVD method to be coated with amorphous silicon membrane; Get rid of photoresist; Photoetching; Adopt the method for developing to make the photoresist figure of required micro-structural; Adopt ICP-98A plasma reaction etching machine to etch the figure of amorphous silicon membrane; Adopt ICP-98A plasma reaction etching machine to remove sacrificial layer material and remaining photoresist, obtain the non-refrigeration of the amorphous silicon focal plane infrared thermal imaging detection array micro-structural of hanging structure.
The non-refrigeration of the amorphous silicon with self-supporting focal plane infrared thermal imaging detection array hanging structure that adopts this method to make is functional, and technology is simple, stable, good reproducibility, be applicable to the needs of actual industrial production.The inventor tests the non-refrigeration of the amorphous silicon with self-supporting focal plane infrared thermal imaging detection array hanging structure that obtains according to above technological process, and concrete outcome is as follows:
Detection array pixel number: 160 * 120
Pixel dimension: 45 * 45 μ m
2
Stability: through two months, array was not found to damage;
Repeatability:, can obtain identical detection array structure through five iterative process flow experiments;
Flying height: 1.9 μ m
This shows, adopt this detector array manufacturing technology, can the good non-refrigeration of the amorphous silicon with self-supporting focal plane infrared thermal imaging detection array hanging structure of obtained performance.
Embodiment 5:
It is a lot of that making has the factor that the non-refrigeration of the amorphous silicon focal plane Infrared Detectors hanging structure of self-supporting need consider, such as selection of selection, thin-film-coating selection of process parameters and the fine process parameter of the selection of structure Design and size, sacrificial layer material, etching gas etc., the either side in these factors all can not be ignored.
Specific practice is as follows:
(1) adopt RCA technology to clean the single-sided polishing silicon chip, taking-up dries up silicon chip with high pure nitrogen, is placed in the baking oven then and dries.
(2) preparation PI glue sacrifice layer on silicon chip adopts the method preparation of whirl coating, and the thickness of PI glue is 2.1 μ m.
(3) adopt the quick heat treatment method that PI glue is cured rapid thermal treatment, the time is 1 hour, and temperature is 170 ℃.
(4) make the figure of PI glue via hole, resist coating on PI glue is used photo-etching machine exposal then, again with developing liquid developing and corrode PI glue, corrodes remaining photoresist with acetone again, obtains the figure of PI glue via hole.
(5) adopt the quick heat treatment method to the PI glue rapid thermal treatment of hardening, temperature is 250 ℃, and the time is half an hour.
(6) the amorphous silicon sensitive thin film that adopts PECVD to prepare low stress, have the self-supporting ability, the thickness of sensitive thin film is 220nm.
(7) adopt the method for whirl coating, exposure, development to make the photoresist figure of required micro-structural.
(8) the using plasma reactive ion etching is made the figure of amorphous silicon membrane.
(9) the using plasma reactive ion etching is removed sacrificial layer material PI glue and remaining photoresist, makes amorphous silicon thermal imaging detection array hanging structure.
Patent of the present invention has adopted the preparation technology of science through a large amount of experimental study and theory analysis, from And obtained having the hanging structure of the non-refrigeration of the non-crystalline silicon focal plane infrared thermal imaging detection array of self-supporting, and And functional, technology is simple, stable, good reproducibility, be applicable to the needs of actual industrial production. Comprehensive rising Come, the hanging structure of the non-refrigeration of the non-crystalline silicon that patent of the present invention provides focal plane infrared thermal imaging detection array Manufacture craft has the following advantages:
1, adopts unsettled membrane type structure to improve the thermal insulation properties of detector, improved the sensitivity of detector Degree;
2, select PI glue as sacrificial layer material, it can satisfy the needs of subsequent treatment process temperature, and Its removal method is simple, and the compatibility between other structures might as well;
3, adopted the self-supporting design, namely non-crystalline silicon is the infrared thermal imaging sensitive material, is again probe unit The material of support arm has been simplified manufacture craft;
4, in the making of the hanging structure of the non-refrigeration of non-crystalline silicon focal plane infrared thermal imaging detection array, fully Consider design and the feasibility analysis thereof of structure and size design, technological process.
Adopt two step quick heat treatment methods of PI glue, namely solidify and cure process, simplified the complexity of technology in the manufacturing process
Claims (3)
1. manufacture method with amorphous silicon thermal imaging detector micro-structure of self-supporting is characterized in that: the device chip micro-structural with non-refrigeration infrared thermal imaging detector of self supporting structure adopts and is coated with certain thickness polyimides as the sacrifice layer of making the non-refrigeration infrared thermal imaging detector hanging of amorphous silicon micro-structural on silicon chip; Adopt curing and the cure process of rapid thermal treatment to polyimides; Adopt the method making low stress of PECVD, amorphous silicon sensitive thin film with self-supporting ability; The using plasma reactive ion etching is removed the sacrifice layer polyimides,
The step of specific practice is as follows:
Step 1, employing RCA technology are cleaned the single-sided polishing silicon chip, take out with high pure nitrogen silicon chip to be dried up, and are placed in the baking oven then and dry;
Step 2, prepare polyimide sacrificial layer on silicon chip, adopt the method preparation of whirl coating, the thickness of polyimides is 1.7～2.2 μ m;
Step 3, employing quick heat treatment method are cured rapid thermal treatment to polyimides, and the time is 1 hour, and temperature is 170 ℃;
Step 4, make the figure of PI glue via hole, resist coating on polyimides is used photo-etching machine exposal then, again with developing liquid developing and corrode polyimides, corrodes remaining photoresist with acetone again, obtains the figure of polyimides via hole;
Step 5, adopt the quick heat treatment method to the polyimides rapid thermal treatment of hardening, temperature is 250 ℃, and the time is half an hour;
Step 6, the amorphous silicon sensitive thin film that adopts PECVD to prepare low stress, have the self-supporting ability, the thickness of sensitive thin film is 180～300nm;
The method of step 7, employing whirl coating, exposure, development is made the photoresist figure of required micro-structural;
Step 8, using plasma reactive ion etching are made the figure of amorphous silicon membrane;
Step 9, using plasma reactive ion etching are removed sacrificial layer material polyimides and remaining photoresist, make amorphous silicon thermal imaging detection array hanging structure.
2. the manufacture method with amorphous silicon thermal imaging detector micro-structure of self-supporting according to claim 1, the thickness that it is characterized in that polyimides in the step 2 are 2 μ m.
3. the manufacture method with amorphous silicon thermal imaging detector micro-structure of self-supporting according to claim 1, the thickness that it is characterized in that the amorphous silicon sensitive thin film in the step 6 is 200nm.
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| 非制冷热成像最新发展和应用前景. 李颖文等.红外与激光工程，第34卷第3期. 2005 * |
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