CN1236304C - Explosives detector and fabrication method - Google Patents
Explosives detector and fabrication method Download PDFInfo
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- CN1236304C CN1236304C CN 03158260 CN03158260A CN1236304C CN 1236304 C CN1236304 C CN 1236304C CN 03158260 CN03158260 CN 03158260 CN 03158260 A CN03158260 A CN 03158260A CN 1236304 C CN1236304 C CN 1236304C
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Abstract
The present invention relates to an explosive detector and a manufacturing method. The detector comprises a sampling device, a silicon sensitive array pair and a signal control and treatment circuit, wherein the sampling device comprises an ultrasonic transmitter, a negative pressure air inlet blower and an ultrasonic vibration pipeline and is used for collecting explosive particles and conveying explosive particles to the surface of the silicon sensitive array pair; the silicon sensitive array pair is two silicon dual end-fixing supported beam arrays which are mutually displaced and are installed in the ultrasonic vibration pipeline and is characterized in that the probability of collected explosive particles is enlarged, and meanwhile, the flow of gas in the ultrasonic vibration pipeline is not affected. The silicon sensitive array pair is manufactured in a microelectronics mechanical system technology and carries out detection by the melting endothermic character of explosives. Output signals of a silicon beam are differentially amplified after read by a gate circuit and compare with signals stored in a memory when no explosives exist, and whether explosives exist on the silicon beam or not is judged. The detector can detect a plurality of solid explosives and can be used for the security check of various public places.
Description
Technical field
The present invention relates to instrument, instrument detection dangerous material field, particularly a kind of explosive detection device and method for making.
Background technology
Known explosive detection device mainly contains metal detector, X ray detecting devices, thermal neutron activation detecting devices, spectroanalysis instrument, " Electronic Nose " (chemical sensor), ion mobility spectrometry detector etc. at present.
Metal detector can only be used for surveying the suspicious item that has metal device, for assert that explosive release provides information, can carry out physical examination to personnel, but then can't survey for the slurry explosives that the terrorist often uses.The X ray detecting devices also can't be surveyed slurry explosives, and also there is the radiation safety problem in it, therefore can only check luggage.
Thermal neutron activation detecting devices can directly detect the composition of explosive, therefore accuracy is higher, can be used for surveying slurry explosives, but equally also there is the radiation safety problem in it, therefore can not be used for personnel's physical examination, can only detect whether explosive is arranged in the luggage.
Spectroanalysis instrument is when the detection that is used for explosive, need sample earlier, then it is carried out spectral analysis, and compare, and then judge whether contain explosive in the tested article with the characteristic spectrum of known explosive, its testing result is comparatively accurate, but this equipment is comparatively heavy, and volume is bigger, and price is also very expensive, be difficult to be used for neatly various public places, can only in the laboratory, use at present.
" Electronic Nose " that be used for detection of explosives belongs to chemical sensor, and sensitivity is higher, but the life-span of its sensitive membrane is shorter, and selectivity is not fine, and its stability and antijamming capability are still waiting further raising.
The ion mobility spectrometry detector is a kind of new use for explosive thing detector that occurs in recent years, commercialization, at first sample during its work, then with sample gasification and ionization, judge by the gaseous ion mobility of measuring samples whether it is certain known explosive, its sensitivity is very high, but price is comparatively expensive.
In addition, the external new method that has also proposed a kind of detection of explosives, it utilizes silicon cantilever as sensitive element, adopt infrared light supply that it is heated, make and to react attached to the explosive particle generation detonation on the silicon cantilever, cause silicon cantilever distortion and vibration, detect by the displacement deformation of optical means then, and then judge whether explosive is arranged on the silicon cantilever silicon cantilever.This technology still is in laboratory stage at present, does not develop experimental prototype as yet.
Summary of the invention
Some shortcomings part according to various explosive detection devices in the prior art the objective of the invention is: proposed a kind of explosive detection device and method for making.Its detection mechanism mainly is based on different solid-state explosives and has different fusing points and this physical characteristics of evaporating point.This detector adopts both-end to prop up the silicon beam array admittedly as sensitive element, the silicon beam array is carried out electrical heating and accurate temperature controlling, make through fusing or evaporation attached to the explosive particle on the silicon beam array behind the over-sampling, produce decalescence, and the surface temperature that causes corresponding silicon beam changes, and can judge and whether has explosive and identify its kind by measuring near the temperature variation of each silicon beam explosive fusing point or evaporating point.
Technical scheme of the present invention is: a kind of explosive detection device, by sampling apparatus, silicon-sensitive array, signal controlling and treatment circuit (12) three parts are formed, it is characterized in that: described first sampling apparatus comprises ultrasonic transmitter (3), negative pressure inlet fan (4) and ultrasonic vibration pipeline (5), the surface that is used to finish the collection of explosive particle and is transported to silicon-sensitive array (7), wherein:
Ultrasonic transmitter (3) is made up of a plurality of piezoelectric ceramic pieces (2) that are arranged in annular, and the frequency of piezoelectric ceramic piece (2) is 1 megahertz, and it is assembled into a piezoelectric ceramic ring;
The air intake opening (1) of negative pressure inlet fan (4) is in the centre of piezoelectric ceramic ring, and dock with the inlet of ultrasonic vibration pipeline (5) gas outlet of blower fan;
Ultrasonic vibration pipeline (5) all adopts the square design with silicon-sensitive array (7), the length of side of the inner-walls of duct length of side and silicon-sensitive array (7) is suitable, pipeline heating element (13) is evenly arranged on four faces of pipeline outer wall, be used for tube wall is heated, on four faces of pipeline outer wall, also be pasted with piezoelectric ceramic piece (2), be used for tube wall is carried out ultrasonic action and makes it produce vibration;
End in ultrasonic vibration pipeline (5) has two pipeline slots (8), in pipeline slot (8), be manufactured with electrode, these electrodes are corresponding one by one with the external electrode of silicon-sensitive array annular substrate (9), are used to connect silicon-sensitive array (7) and peripheral signal controlling and treatment circuit (12);
Making the used material of ultrasonic vibration pipeline (5) can be quartz, pottery, heatproof hard plastic, metal, when adopting metal material to make ultrasonic vibration pipeline (5), the electrode in pipeline and pipeline heating element (13), piezoelectric ceramic piece (2), the pipeline slot (8) need be carried out insulation processing;
Respectively there is a valve in the porch of ultrasonic vibration pipeline (5) and exit, two valves are opened simultaneously so that sample during sampling, sampling finishes latter two valve and closes simultaneously, ducted two silicon-sensitive arrays (7) are in the environment with extraneous relative isolation, reduce the interference that extraneous air-flow and temperature variation cause;
In the outside of pipe outlet valve (10) extraction fan (11) is installed also, air-flow is in ducted uniflux during in order to the reinforcement sampling, and ultrasonic transmitter (3), negative pressure inlet fan (4), extraction fan (11), pipeline heating element (13) all adopt the control of interlock electric switch with ultrasonic action element, entrance valve (6) and pipe outlet valve (10);
Launch hyperacoustic while at the switch of opening ultrasonic transmitter (3), two valves in the ultrasonic vibration pipeline (5) are opened simultaneously, fan starting also begins air inlet, extraction fan (11) beginning exhaust, and ultrasonic vibration pipeline (5) begins heating and carries out ultrasonic vibration;
When closing ultrasonic transmitter (3), negative pressure inlet fan (4) and extraction fan (11) also quit work simultaneously, ultrasonic vibration pipeline (5) terminal valve Close All, and pipeline stops heating and ultrasonic vibration;
Described second portion silicon-sensitive array is to being: two silicon-sensitive arrays (7) are fixed in two pipeline slots (8), it is installed in the ultrasonic vibration pipeline (5) perpendicular to airintake direction, it is right one in front and one in back to form the silicon-sensitive array, mutual dislocation during installation makes that the silicon beam (14) in the back silicon-sensitive array faces the gap (15) between the silicon beam in the previous silicon-sensitive array;
Silicon-sensitive array (7) is parallel to each other and measure-alike both-end props up silicon beam (14) admittedly and constitutes by a plurality of, all is manufactured with heating element and temperature element on each silicon beam (14), and gapped (15) and its spacing equate between silicon beam (14);
Because silicon-sensitive array (7) structure is not a complete continuous plane, between silicon beam (14) gapped (15), thereby can blocking pipe, guarantee that the gas that contains explosive particle in ultrasonic vibration pipeline (5) can carry out one-way flow, is convenient to the surface that explosive particle can be fallen silicon beam (14);
Part explosive particle can pass the gap (15) between the silicon beam in first silicon-sensitive array (7), because this gap (15) faces the silicon beam (14) of second silicon-sensitive array (7), therefore the explosive particle that passes first silicon-sensitive array (7) will directly be fallen on the silicon beam (14) of second silicon-sensitive array (7), so both increase the probability that collects explosive particle, do not influenced gas flow in the ultrasonic vibration pipeline (5) simultaneously again;
By heating element silicon beam (14) is heated, make explosive particle generation fusion or the evaporation reaction that to fall silicon beam (14) surface and produce decalescence, measure the caused silicon beam of decalescence (14) surface temperature change signal by temperature element then, and this signal sent into amplified in signal controlling and the treatment circuit (12) and handle;
Described third part signal controlling and treatment circuit (12) mainly comprise power supply, temperature measurement signal feedback and heating control circuit, the switching gate circuit, differential amplifier circuit, integrating circuit, signal comparator circuit, single-chip microcomputer, storer, warning circuit etc., temperature signal by the electrode pair silicon beam (14) in the terminal pipeline slot of ultrasonic vibration pipeline (5) (8) reads and carries out the accurate temperature controlling heating, silicon beam (14) is heated to the fusing point or the evaporating point of explosive particle, reading each silicon beam (14) by the switching gate circuit then goes up owing to explosive particle fuses or evaporate the temperature variation signal that causes, silicon beam (14) temperature variation signal when amplifying the Free From Explosives particulate of having stored in back and the storer through difference compares, and then judges whether there is explosive particle on the silicon beam (14) and whether reports to the police.
The method for making of described explosive detection device is:
1) makes silicon-sensitive array (7) earlier;
1.1) silicon chip of choosing twin polishing carries out chemical cleaning, the diameter of silicon chip is 2～8 inches, cut-off directly is 3～4 inches a silicon chip, its thickness is 300～500 microns, resistivity is 10 ohmcms, 100,110,111 or other crystal orientation silicon chip all can;
1.2) silicon chip that cleaned is carried out thermal oxide, in the silicon chip tow sides layer of silicon dioxide of all growing, its thickness is 0.3 micron;
1.3) at silica surface deposit one deck polysilicon in silicon chip front, thickness is about 1 micron, in the deposit polysilicon polysilicon is carried out in-situ boron and mixes, and makes polysilicon have lower resistivity, its square resistance is about 10 ohm;
1.4) thermal oxide once more, in the superficial growth layer of silicon dioxide of polysilicon, about 0.2 micron of thickness;
1.5) positive photoetching, eroding away the silicon dioxide window earlier, etch polysilicon under the mask of silicon dioxide is produced the polysilicon heating resistor subsequently;
1.6) thermal oxide for the third time, make the sidewall growth layer of silicon dioxide of polysilicon resistance;
1.7) positive photoetching for the second time, etch the lead-in wire porose area of polysilicon heating resistor;
1.8) front photoetching for the third time, remove the lead-in wire of polysilicon heating resistor and the photoresist at place, temperature detecting resistance position, utilize radio-frequency sputtering technology deposit titanium, platinum, golden three-layer metal successively subsequently, its thickness is respectively 0.02 micron, 0.1 micron and 0.3 micron, and adopts metal lift-off material to produce lead-in wire and the temperature detecting resistance and the lead-in wire thereof of polysilicon heating resistor;
1.9) positive the 4th photoetching, remove the gold of the three layers composite metal the superiors in temperature detecting resistance district, expose metal platinum;
1.10) positive the 5th photoetching, etching the Facad structure of silicon-sensitive array (7), etching depth should equal or be slightly larger than the design thickness of silicon beam;
1.11) back side photoetching, and adopt lithographic technique that the back side is lost deeply with high-aspect-ratio, until with the Facad structure break-through, thereby produce silicon beam (14) array, finish the separation between a plurality of silicon-sensitive arrays (7) simultaneously;
1.12) with silicon-sensitive array (7) and annular substrate (9) sealing-in that processes in advance, adopt gold wire bonder to be drawn out to the interior electrode in the silicon-sensitive array (7) on the external electrode of annular substrate (9) with spun gold subsequently, so far, the manufacture craft of silicon-sensitive array (7) is all over;
2) sampling apparatus of making explosive particle, this device mainly comprises ultrasonic transmitter (3), negative pressure inlet fan (4), (5) three parts of ultrasonic vibration pipeline;
Ultrasonic transmitter (3) is made up of a plurality of piezoelectric ceramic pieces (2) that are arranged in annular, and the frequency of these piezoelectric ceramic pieces (2) is about 1 megahertz, and commercialization can directly be bought and it is assembled into a piezoelectric ceramic ring; In the centre of piezoelectric ceramic ring is the air intake opening (1) of negative pressure inlet fan, and negative pressure inlet fan (4) can directly be bought or customized according to the designing requirement of size, power; Dock with the inlet of ultrasonic vibration pipeline (5) gas outlet of negative pressure inlet fan (4);
Because silicon-sensitive array (7) is square, so ultrasonic vibration pipeline (5) also adopts squared design, and the length of side of the inner-walls of duct length of side and silicon-sensitive array (7) is suitable; Pipeline heating element (13) is evenly arranged on four faces of pipeline outer wall, is used for tube wall is heated; In addition, on four faces of pipeline outer wall, also be pasted with piezoelectric ceramic piece (2), be used for tube wall is carried out ultrasonic action and makes it produce vibration;
End in ultrasonic vibration pipeline (5) has two pipeline slots (8), in pipeline slot (8), be manufactured with electrode, these electrodes are corresponding one by one with the external electrode of sensitization array annular substrate (9), are used to connect sensitization array (7) and peripheral signal controlling and treatment circuit (12); Two silicon-sensitive arrays (7) are fixed in these two pipeline slots (8), and mutual dislocation during installation makes that the silicon beam (14) in the back sensitization array faces the gap between the silicon beam (15) in the previous sensitization array;
Making the used material of ultrasonic vibration pipeline (5) can be quartz, pottery, heatproof hard plastic, metal etc., when adopting metal material to make pipeline, the electrode in pipeline and pipeline heating element, piezoelectric ceramic piece, the pipeline slot etc. need be carried out insulation processing;
Respectively there are a valve (6) and (10) in the porch of ultrasonic vibration pipeline (5) and exit, two valves are opened simultaneously so that sample during sampling, sampling finishes latter two valve and closes simultaneously, ducted two sensitization arrays (7) are in the environment with extraneous relative isolation, reduce the interference that extraneous air-flow and temperature variation cause;
In the outside of pipe outlet valve an extraction fan (11) is installed also, air-flow is in ducted uniflux during in order to the reinforcement sampling; Ultrasonic transmitter (3), negative pressure inlet fan (4), extraction fan (11), pipeline heating element (13) all adopt the control of interlock electric switch with ultrasonic action element, entrance valve (6) and outlet valve (10);
Launch hyperacoustic while at the switch of opening ultrasonic transmitter (3), two valves in the ultrasonic vibration pipeline (5) are opened simultaneously, negative pressure inlet fan (4) starts and the beginning air inlet, extraction fan (11) beginning exhaust, and ultrasonic vibration pipeline (5) begins heating and carries out ultrasonic vibration;
When closing ultrasonic transmitter (3), negative pressure inlet fan (4) and extraction fan (11) also quit work simultaneously, pipeline terminal valve Close All, and ultrasonic vibration pipeline (5) stops heating and ultrasonic vibration;
3) make signal controlling and treatment circuit (12), this part mainly comprises power supply, temperature measurement signal feedback and heating control circuit, switching gate circuit, differential amplifier circuit, integrating circuit, signal comparator circuit, single-chip microcomputer, storer, warning circuit etc.;
Temperature signal by the electrode pair silicon beam (14) in the terminal slot of ultrasonic vibration pipeline (5) reads and carries out the accurate temperature controlling heating;
Each main components and parts that is adopted in whole signal controlling and the treatment circuit (12) and integrated circuit be entire serviceization, can directly buy and carries out being connected of electronic circuit and debugging according to the signal controlling that intend to realize with the functional requirement of processing.
The testing process of explosive detection device detection of explosives particulate is: at first two the silicon-sensitive arrays (7) in the ultrasonic vibration pipeline are carried out heat and clean and demarcate, promptly all silicon beams (14) are carried out the high temperature heating earlier, heating-up temperature should be higher than the evaporating point of explosive, and the explosive particle that remains on the silicon beam (14) in once testing before making evaporates fully;
After heat clean to finish, the thermometric when all silicon beams (14) are carried out the Free From Explosives particulate was demarcated, and promptly all silicon beams (14) was carried out the accurate temperature controlling heating, write down near its temperature variation explosive fusing point or evaporating point, and with data storing in storer;
Subsequently, carry out the sampling of explosive particle, promptly open ultrasonic transmitter (3) and launch the ultrasound wave of certain power and certain frequency to detected object, under hyperacoustic incentive action, loosening and the desorption attached to some explosive particles on measurand surface, meanwhile, the terminal valve (6) of ultrasonic vibration pipeline (5), (10) are opened, negative pressure inlet fan (4) and extraction fan (11) start, and may contain the air intake pipe road of explosive particle and flow to pipe outlet;
At this moment, ultrasonic vibration pipeline (5) is with certain ultrasonic frequency vibration, simultaneously, be distributed in heating element on the tube wall and begin pipeline evenly heated and make it to produce the entad air-flow that points to the pipeline central axis by tube wall, make the explosive particle can not be attached to the inner wall surface of pipeline;
Pair of parallel but the silicon-sensitive array (7) of mutual dislocation is positioned at the end of ultrasonic vibration pipeline (5), the part explosive particle is along with the mobile arrival of air-flow in the pipeline and attached to silicon beam (14) surface of first silicon-sensitive array (7), also has the part explosive particle may pass that the gap (15) between the silicon beam in first silicon-sensitive array (7) arrives and attached to silicon beam (14) surface of second silicon-sensitive array (7);
After sampling process finishes, ultrasonic transmitter (3), negative pressure inlet fan (4), extraction fan (11), pipeline terminal valve (6), (10) are closed simultaneously, and stop tube wall heating and ultrasonic vibration, do not have air flow in the pipeline this moment, and the silicon-sensitive array is to being in the metastable environment that is isolated from the outside;
By signal controlling and treatment circuit (12) all the silicon beams (14) in two silicon-sensitive arrays (7) are carried out the accurate temperature controlling heating, silicon beam (14) is heated to the fusing point or the evaporating point of explosive particle, reading each silicon beam (14) by Single-chip Controlling switching gate circuit then goes up owing to explosive particle fuses or evaporate the temperature variation signal that causes, the temperature variation signal that amplifies before back and the sampling the corresponding silicon beam (14) when being stored in the Free From Explosives particulate in the storer through difference compares, thereby judges on this silicon beam (14) whether explosive particle is arranged; In two silicon-sensitive arrays (7),, just report to the police by warning circuit immediately as long as on any one silicon beam (14), detect explosive particle.
The invention has the beneficial effects as follows: this explosive detection device can detect different solid-state explosives by changing the working temperature of silicon beam array, has characteristics such as volume is little, in light weight, cost is low, can portablely use.The explosive detection device can noncontact, the detection personnel carries and conceal the multiple solid-state explosive in luggage with no damage, can be applicable to the safety inspection of public places such as airport, harbour, station.
Description of drawings
Fig. 1 is an explosive detection device synoptic diagram;
Fig. 2 is ultrasonic transmitter and air intake opening relative position synoptic diagram;
Fig. 3 is the ultrasonic vibration pipeline synoptic diagram;
Fig. 4 is a silicon beam array stereographic map;
Fig. 5 is the silicon beam array schematic cross-section of a pair of mutual dislocation.
Among the figure: 1. air intake opening, 2. piezoelectric ceramic piece, 3. ultrasonic transmitter, 4. negative pressure inlet fan, 5. ultrasonic vibration pipeline, 6. entrance valve, 7. the silicon-sensitive array is right, 8. pipeline slot, 9. annular substrate, 10. pipe outlet valve, 11. extraction fans, 12. signal controlling and treatment circuit, 13. the pipeline heating element, 14. silicon beams, the gap between the 15. silicon beams, the silicon beam array that is installed in the previous slot 8 is 7A, and the silicon beam array that is installed in the back slot 8 is 7B.
Embodiment
Fig. 1 is an explosive detection device proposed by the invention, explosive sampling apparatus, silicon-sensitive array, signal controlling and treatment circuit 12 these three parts is made of.The silicon-sensitive array 7 that at first the manufacture craft difficulty is bigger, its procedure of processing is as follows:
1) silicon chip of choosing twin polishing carries out chemical cleaning, and the diameter of silicon chip is 2～8 inches, and cut-off directly is 3～4 inches a silicon chip, and its thickness is 300～500 microns, and resistivity is 10 ohmcms, 100,110,111 or other crystal orientation silicon chip all can;
2) silicon chip that cleaned is carried out thermal oxide, in the silicon chip tow sides layer of silicon dioxide of all growing, its thickness is 0.3 micron;
3) at silica surface deposit one deck polysilicon in silicon chip front, thickness is about 1 micron, in the deposit polysilicon polysilicon is carried out in-situ boron and mixes, and makes polysilicon have lower resistivity, and its square resistance is about 10 ohm;
4) thermal oxide once more, in the superficial growth layer of silicon dioxide of polysilicon, about 0.2 micron of thickness;
5) positive photoetching erodes away the silicon dioxide window earlier, and etch polysilicon under the mask of silicon dioxide is produced the polysilicon heating resistor subsequently;
6) thermal oxide for the third time makes the sidewall growth layer of silicon dioxide of polysilicon resistance;
7) positive photoetching for the second time etches the lead-in wire porose area of polysilicon heating resistor;
8) front photoetching for the third time, remove the lead-in wire of polysilicon heating resistor and the photoresist at place, temperature detecting resistance position, utilize radio-frequency sputtering technology deposit titanium, platinum, golden three-layer metal successively subsequently, its thickness is respectively 0.02 micron, 0.1 micron and 0.3 micron, and adopts metal lift-off material to produce lead-in wire and the temperature detecting resistance and the lead-in wire thereof of polysilicon heating resistor;
9) metallic gold of the three layers composite metal the superiors in temperature detecting resistance district is removed in positive the 4th photoetching, exposes metal platinum;
10) positive the 5th photoetching etches the Facad structure of silicon-sensitive array 7, and etching depth should equal or be slightly larger than the design thickness of silicon beam;
11) back side photoetching, and adopt lithographic technique that the back side is lost deeply with high-aspect-ratio, until with the Facad structure break-through, thereby produce silicon beam 14 arrays, finish the separation between a plurality of silicon-sensitive arrays 7 simultaneously;
12) with silicon-sensitive array 7 and annular substrate 9 sealing-ins that process in advance, adopt gold wire bonder that the interior electrode in the silicon-sensitive array 7 is drawn out to spun gold on the external electrode of annular substrate 9 subsequently, so far, the manufacture craft of silicon-sensitive array 7 is all over.
Make the sampling apparatus of explosive particle subsequently, this device mainly comprises ultrasonic transmitter 3, negative pressure inlet fan 4,5 three parts of ultrasonic vibration pipeline;
Because silicon-sensitive array 7 is square, so ultrasonic vibration pipeline 5 also adopts squared design, and the length of side of the inner-walls of duct length of side and silicon-sensitive array 7 is suitable; Pipeline heating element 13 is evenly arranged on four faces of pipeline outer wall, is used for tube wall is heated; In addition, on four faces of pipeline outer wall, also be pasted with piezoelectric ceramic piece 2, be used for tube wall is carried out ultrasonic action and makes it produce vibration;
End in ultrasonic vibration pipeline 5 has two pipeline slots 8, is manufactured with electrode in pipeline slot 8, and these electrodes are corresponding one by one with the external electrode of sensitization array annular substrate 9, is used to connect sensitization array 7 and peripheral signal controlling and treatment circuit 12; Two silicon-sensitive arrays 7 are fixed in these two pipeline slots 8, and mutual dislocation during installation makes that the silicon beam 14 in the back sensitization array faces the gap between the silicon beam 15 in the previous sensitization array;
Making ultrasonic vibration pipeline 5 used materials can be quartz, pottery, heatproof hard plastic, metal etc., when adopting metal material to make pipeline, the electrode in pipeline and pipeline heating element 13, piezoelectric ceramic piece 2, the pipeline slot 8 etc. need be carried out insulation processing;
Respectively there are a valve 6 and 10 in the porch of ultrasonic vibration pipeline 5 and exit, two valves are opened simultaneously so that sample during sampling, sampling finishes latter two valve and closes simultaneously, ducted two sensitization arrays 7 are in the environment with extraneous relative isolation, reduce the interference that extraneous air-flow and temperature variation cause;
In the outside of pipe outlet valve an extraction fan 11 is installed also, air-flow is in ducted uniflux during in order to the reinforcement sampling; Ultrasonic transmitter 3, negative pressure inlet fan 4, extraction fan 11, pipeline heating element 13 all adopt the control of interlock electric switch with ultrasonic action element, entrance valve 6 and outlet valve 10;
Launch hyperacoustic while at the switch of opening ultrasonic transmitter 3, two valves in the ultrasonic vibration pipeline 5 are opened simultaneously, negative pressure inlet fan 4 starts and the beginning air inlet, extraction fan 11 beginning exhausts, and ultrasonic vibration pipeline 5 begins heating and carries out ultrasonic vibration;
When closing ultrasonic transmitter 3, negative pressure inlet fan 4 and extraction fan 11 also quit work simultaneously, pipeline terminal valve Close All, and ultrasonic vibration pipeline 5 stops heating and ultrasonic vibration.
Make signal controlling and treatment circuit 12 at last, this part mainly comprises power supply, temperature measurement signal feedback and heating control circuit, switching gate circuit, differential amplifier circuit, integrating circuit, signal comparator circuit, single-chip microcomputer, storer, warning circuit etc.; Temperature signal by the electrode pair silicon beam 14 in the terminal slot of ultrasonic vibration pipeline 5 reads and carries out the accurate temperature controlling heating; Each main components and parts that is adopted in whole signal controlling and the treatment circuit 12 and integrated circuit be entire serviceization, can directly buy and carries out being connected of electronic circuit and debugging according to the signal controlling that intend to realize with the functional requirement of processing.
After this detector completes, promptly can be used for the detection of explosive.With a kind of modal explosive TNT is example:
Utilize the fusion endothermic character of TNT under its melting temperature that it is detected.At first open the power supply of detector, two silicon-sensitive arrays 7 in the ultrasonic vibration pipeline 5 are carried out heat to be cleaned and demarcates, promptly all silicon beams 14 are carried out the high temperature heating earlier, heating-up temperature should be higher than the evaporating point of TNT, and the TNT particulate that remains on the silicon beam 14 in once testing before making evaporates fully;
After heat is cleaned and is finished, thermometric when all silicon beams 14 are not had the TNT particulate is demarcated, promptly all silicon beams 14 are carried out the accurate temperature controlling heating, the silicon beam is heated to 80 ℃ of the melting temperatures of TNT, and write down near the temperature variation of each silicon beam 14 TNT fusing point, with data storing in storer; Subsequently, carry out the sampling of TNT particulate, promptly open ultrasonic transmitter 3 and launch the ultrasound wave of certain power and certain frequency to detected object, under hyperacoustic incentive action, the loosening and desorption attached to some TNT particulates on measurand surface;
Meanwhile, the terminal valve 6 and 10 of ultrasonic vibration pipeline 5 is opened, and negative pressure inlet fan 4 and extraction fan 11 start, and may contain the air intake pipe road of TNT particulate and flow to pipe outlet; At this moment, this ultrasonic vibration pipeline 5 is also with certain ultrasonic frequency vibration, simultaneously, be distributed in pipeline heating element 13 on the tube wall and begin pipeline evenly heated and make it to produce the entad air-flow that points to the pipeline central axis by tube wall, make the TNT particulate can not be attached to the inner wall surface of pipeline;
Pair of parallel but the silicon-sensitive array 7 of mutual dislocation is positioned at the end of ultrasonic vibration pipeline 5, part TNT particulate is along with the mobile arrival of air-flow in the pipeline and attached to silicon beam 14 surfaces of first sensitization array, also has part TNT particulate may pass that the gap between the silicon beam 15 in first sensitization array arrives and attached to silicon beam 14 surfaces of second sensitization array;
After sampling process finishes, ultrasonic transmitter 3, negative pressure inlet fan 4, extraction fan 11, pipeline terminal valve 6 and 10 are closed simultaneously, and stop tube wall heating and ultrasonic vibration, do not have air flow in the ultrasonic vibration pipeline 5 this moment, and sensitization array is to being in the metastable environment that is isolated from the outside;
Subsequently, carry out the accurate temperature controlling heating by all the silicon beams 14 in signal controlling and 12 pairs of two sensitization arrays 7 of treatment circuit, silicon beam 14 is heated to 80 ℃, read on each silicon beam 14 because the temperature variation signal that the fusion of TNT particulate causes by Single-chip Controlling switching gate circuit then, the temperature variation signal that amplifies before back and the sampling the corresponding silicon beam 14 when being stored in the no TNT particulate in the storer through difference compares, thereby judges on this silicon beam 14 whether the TNT particulate is arranged.In two sensitization arrays 7,, just report to the police by warning circuit immediately as long as on any one silicon beam 14, detect the TNT particulate.
When surveying the solid-state explosive of other kinds, need to change the working temperature of silicon beam array, promptly clean and the thermometric timing signal in heat, the working temperature of silicon beam 14 is individually set to the evaporating point temperature and the melting temperature of other explosives by single-chip microcomputer, repeat the aforesaid operations process then, can realize detection different types of solid-state explosive.
Claims (2)
1, a kind of solid-state explosive detection device, by sampling apparatus, silicon-sensitive array, signal controlling and treatment circuit (12) three parts are formed, it is characterized in that: described first sampling apparatus comprises ultrasonic transmitter (3), negative pressure inlet fan (4) and ultrasonic vibration pipeline (5), the surface that is used to finish the collection of solid-state explosive particle and is transported to silicon-sensitive array (7), wherein:
Ultrasonic transmitter (3) is made up of a plurality of piezoelectric ceramic pieces (2) that are arranged in annular, and the frequency of piezoelectric ceramic piece (2) is 1 megahertz, and it is assembled into a piezoelectric ceramic ring;
The air intake opening (1) of negative pressure inlet fan (4) is in the centre of piezoelectric ceramic ring, and dock with the inlet of ultrasonic vibration pipeline (5) gas outlet of blower fan;
Ultrasonic vibration pipeline (5) all adopts the square design with silicon-sensitive array (7), the length of side of the inner-walls of duct length of side and silicon-sensitive array (7) is suitable, pipeline heating element (13) is evenly arranged on four faces of pipeline outer wall, be used for tube wall is heated, on four faces of pipeline outer wall, also be pasted with piezoelectric ceramic piece (2), be used for tube wall is carried out ultrasonic action and makes it produce vibration;
End in ultrasonic vibration pipeline (5) has two pipeline slots (8), in pipeline slot (8), be manufactured with electrode, these electrodes are corresponding one by one with the external electrode of silicon-sensitive array annular substrate (9), are used to connect silicon-sensitive array (7) and peripheral signal controlling and treatment circuit (12);
Making the used material of ultrasonic vibration pipeline (5) can be quartz, pottery, heatproof hard plastic, metal, when adopting metal material to make ultrasonic vibration pipeline (5), the electrode in pipeline and pipeline heating element (13), piezoelectric ceramic piece (2), the pipeline slot (8) need be carried out insulation processing;
Respectively there is a valve in the porch of ultrasonic vibration pipeline (5) and exit, two valves are opened simultaneously so that sample during sampling, sampling finishes latter two valve and closes simultaneously, ducted two silicon-sensitive arrays (7) are in the environment with extraneous relative isolation, reduce the interference that extraneous air-flow and temperature variation cause;
In the outside of pipe outlet valve (10) extraction fan (11) is installed also, air-flow is in ducted uniflux during in order to the reinforcement sampling, and ultrasonic transmitter (3), negative pressure inlet fan (4), extraction fan (11), pipeline heating element (13) all adopt the control of interlock electric switch with ultrasonic action element, entrance valve (6) and pipe outlet valve (10);
Launch hyperacoustic while at the switch of opening ultrasonic transmitter (3), two valves in the ultrasonic vibration pipeline (5) are opened simultaneously, fan starting also begins air inlet, extraction fan (11) beginning exhaust, and ultrasonic vibration pipeline (5) begins heating and carries out ultrasonic vibration;
When closing ultrasonic transmitter (3), negative pressure inlet fan (4) and extraction fan (11) also quit work simultaneously, ultrasonic vibration pipeline (5) terminal valve Close All, and pipeline stops heating and ultrasonic vibration;
Described second portion silicon-sensitive array is to being: two silicon-sensitive arrays (7) are fixed in two pipeline slots (8), it is installed in the ultrasonic vibration pipeline (5) perpendicular to airintake direction, it is right one in front and one in back to form the silicon-sensitive array, mutual dislocation during installation makes that the silicon beam (14) in the back silicon-sensitive array faces the gap (15) between the silicon beam in the previous silicon-sensitive array:
Silicon-sensitive array (7) is parallel to each other and measure-alike both-end props up silicon beam (14) admittedly and constitutes by a plurality of, all is manufactured with heating element and temperature element on each silicon beam (14), and gapped (15) and its spacing equate between silicon beam (14);
Because silicon-sensitive array (7) structure is not a complete continuous plane, between silicon beam (14) gapped (15), thereby can blocking pipe, guarantee that the gas that contains solid-state explosive particle in ultrasonic vibration pipeline (5) can carry out one-way flow, is convenient to the surface that solid-state explosive particle can be fallen silicon beam (14);
The solid-state explosive particle of a part can pass the gap (15) between the silicon beam in first silicon-sensitive array (7), because this gap (15) faces the silicon beam (14) of second silicon-sensitive array (7), therefore the solid-state explosive particle that passes first silicon-sensitive array (7) will directly be fallen on the silicon beam (14) of second silicon-sensitive array (7), so both increase the probability that collects solid-state explosive particle, do not influenced gas flow in the ultrasonic vibration pipeline (5) simultaneously again;
By heating element silicon beam (14) is heated, make solid-state explosive particle generation fusion or the evaporation reaction that to fall silicon beam (14) surface and produce decalescence, measure the caused silicon beam of decalescence (14) surface temperature change signal by temperature element then, and this signal sent into amplified in signal controlling and the treatment circuit (12) and handle;
Described third part signal controlling and treatment circuit (12) mainly comprise power supply, temperature measurement signal feedback and heating control circuit, the switching gate circuit, differential amplifier circuit, integrating circuit, signal comparator circuit, single-chip microcomputer, storer, warning circuit, temperature signal by the electrode pair silicon beam (14) in the terminal pipeline slot of ultrasonic vibration pipeline (5) (8) reads and carries out the accurate temperature controlling heating, silicon beam (14) is heated to the fusing point or the evaporating point of solid-state explosive particle, reading each silicon beam (14) by the switching gate circuit then goes up owing to solid-state explosive particle fuses or evaporate the temperature variation signal that causes, silicon beam (14) temperature variation signal when amplifying the no solid-state explosive particle of having stored in back and the storer through difference compares, and then judges whether there is solid-state explosive particle on the silicon beam (14) and whether reports to the police.
2, the method for making of a kind of solid-state explosive detection device according to claim 1 is characterized in that:
1) makes silicon-sensitive array (7) earlier;
1.1) silicon chip of choosing twin polishing carries out chemical cleaning, the diameter of silicon chip is 2～8 inches, and cut-off directly is 3～4 inches a silicon chip, and its thickness is 300～500 microns, and resistivity is 10 ohmcms, 100,110,111 silicon chips all can;
1.2) silicon chip that cleaned is carried out thermal oxide, in the silicon chip tow sides layer of silicon dioxide of all growing, its thickness is 0.3 micron;
1.3) at silica surface deposit one deck polysilicon in silicon chip front, thickness is 1 micron, in the deposit polysilicon polysilicon is carried out in-situ boron and mixes, and makes polysilicon have lower resistivity, its square resistance is 10 ohm;
1.4) thermal oxide once more, in the superficial growth layer of silicon dioxide of polysilicon, 0.2 micron of thickness;
1.5) positive photoetching, eroding away the silicon dioxide window earlier, etch polysilicon under the mask of silicon dioxide is produced the polysilicon heating resistor subsequently;
1.6) thermal oxide for the third time, make the sidewall growth layer of silicon dioxide of polysilicon resistance;
1.7) positive photoetching for the second time, etch the lead-in wire porose area of polysilicon heating resistor;
1.8) front photoetching for the third time, remove the lead-in wire of polysilicon heating resistor and the photoresist at place, temperature detecting resistance position, utilize radio-frequency sputtering technology deposit titanium, platinum, golden three-layer metal successively subsequently, its thickness is respectively 0.02 micron, 0.1 micron and 0.3 micron, and adopts metal lift-off material to produce lead-in wire and the temperature detecting resistance and the lead-in wire thereof of polysilicon heating resistor;
1.9) positive the 4th photoetching, remove the gold of the three layers composite metal the superiors in temperature detecting resistance district, expose platinum;
1.10) positive the 5th photoetching, etching the Facad structure of silicon-sensitive array (7), etching depth should equal or be slightly larger than the design thickness of silicon beam;
1.11) back side photoetching, and adopt lithographic technique that the back side is lost deeply with high-aspect-ratio, until with the Facad structure break-through, thereby produce silicon beam (14) array, finish the separation between a plurality of silicon-sensitive arrays (7) simultaneously;
1.12) with silicon-sensitive array (7) and annular substrate (9) sealing-in that processes in advance, adopt gold wire bonder to be drawn out to the interior electrode in the silicon-sensitive array (7) on the external electrode of annular substrate (9) with spun gold subsequently, so far, the manufacture craft of silicon-sensitive array (7) is all over;
2) make the sampling apparatus of solid-state explosive particle subsequently, this device mainly comprises ultrasonic transmitter (3), negative pressure inlet fan (4), (5) three parts of ultrasonic vibration pipeline;
Ultrasonic transmitter (3) is made up of a plurality of piezoelectric ceramic pieces (2) that are arranged in annular, and the frequency of these piezoelectric ceramic pieces (2) is 1 megahertz, and commercialization can directly be bought and it is assembled into a piezoelectric ceramic ring; In the centre of piezoelectric ceramic ring is the air intake opening (1) of negative pressure inlet fan, and negative pressure inlet fan (4) can directly be bought or customized according to the designing requirement of size, power; Dock with the inlet of ultrasonic vibration pipeline (5) gas outlet of negative pressure inlet fan (4);
Because silicon-sensitive array (7) is square, so ultrasonic vibration pipeline (5) also adopts squared design, and the length of side of the inner-walls of duct length of side and silicon-sensitive array (7) is suitable; Pipeline heating element (13) is evenly arranged on four faces of pipeline outer wall, is used for tube wall is heated; In addition, on four faces of pipeline outer wall, also be pasted with piezoelectric ceramic piece (2), be used for tube wall is carried out ultrasonic action and makes it produce vibration;
End in ultrasonic vibration pipeline (5) has two pipeline slots (8), in pipeline slot (8), be manufactured with electrode, these electrodes are corresponding one by one with the external electrode of sensitization array annular substrate (9), are used to connect sensitization array (7) and peripheral signal controlling and treatment circuit (12); Two silicon-sensitive arrays (7) are fixed in these two pipeline slots (8), and mutual dislocation during installation makes that the silicon beam (14) in the back sensitization array faces the gap between the silicon beam (15) in the previous sensitization array;
Making the used material of ultrasonic vibration pipeline (5) can be quartz, pottery, heatproof hard plastic, metal etc., when adopting metal material to make pipeline, the electrode in pipeline and pipeline heating element, piezoelectric ceramic piece, the pipeline slot etc. need be carried out insulation processing;
Respectively there is a valve in the porch of ultrasonic vibration pipeline (5) and exit, two valves are opened simultaneously so that sample during sampling, sampling finishes latter two valve and closes simultaneously, ducted two sensitization arrays (7) are in the environment with extraneous relative isolation, reduce the interference that extraneous air-flow and temperature variation cause;
In the outside of pipe outlet valve an extraction fan (11) is installed also, air-flow is in ducted uniflux during in order to the reinforcement sampling; Ultrasonic transmitter (3), negative pressure inlet fan (4), extraction fan (11), pipeline heating element (13) all adopt the control of interlock electric switch with ultrasonic action element, entrance valve and outlet valve;
Launch hyperacoustic while at the switch of opening ultrasonic transmitter (3), two valves in the ultrasonic vibration pipeline (5) are opened simultaneously, negative pressure inlet fan (4) starts and the beginning air inlet, extraction fan (11) beginning exhaust, and ultrasonic vibration pipeline (5) begins heating and carries out ultrasonic vibration;
When closing ultrasonic transmitter (3), negative pressure inlet fan (4) and extraction fan (11) also quit work simultaneously, pipeline terminal valve Close All, and ultrasonic vibration pipeline (5) stops heating and ultrasonic vibration;
3) make signal controlling and treatment circuit (12) at last, this part mainly comprises power supply, temperature measurement signal feedback and heating control circuit, switching gate circuit, differential amplifier circuit, integrating circuit, signal comparator circuit, single-chip microcomputer, storer, warning circuit;
Temperature signal by the electrode pair silicon beam (14) in the terminal slot of ultrasonic vibration pipeline (5) reads and carries out the accurate temperature controlling heating;
Each main components and parts that is adopted in whole signal controlling and the treatment circuit (12) and integrated circuit be entire serviceization, can directly buy and carries out being connected of electronic circuit and debugging according to the signal controlling that intend to realize with the functional requirement of processing.
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| CN 03158260 CN1236304C (en) | 2003-09-16 | 2003-09-16 | Explosives detector and fabrication method |
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| CN 03158260 CN1236304C (en) | 2003-09-16 | 2003-09-16 | Explosives detector and fabrication method |
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| CN102612649A (en) * | 2009-11-20 | 2012-07-25 | 犹他大学研究基金会 | Sensors and methods for detecting peroxide based explosives |
| CN102507361B (en) * | 2011-10-17 | 2013-08-28 | 上海交通大学 | Micro solid mode resonance explosive detector |
| CN102507362B (en) * | 2011-11-02 | 2013-08-28 | 上海交通大学 | Piezoelectric matrix micro solid mode resonant type explosive detector |
| CN106442320A (en) * | 2016-07-26 | 2017-02-22 | 北京艾泰克科技有限公司 | Portable explosive molecular detector |
| CN108918353B (en) * | 2018-05-18 | 2020-06-30 | 电子科技大学 | Method for qualitatively detecting particulate matter in atmospheric environment |
| CN111239343A (en) * | 2020-02-20 | 2020-06-05 | 北京泰峰科仪技术有限公司 | Gas acquisition and measurement device |
| CN111398357A (en) * | 2020-04-14 | 2020-07-10 | 安徽航途智能科技有限公司 | Vehicle door security inspection instrument system and detection method |
| CN112814975B (en) * | 2020-12-30 | 2023-05-30 | 中国航空工业集团公司金城南京机电液压工程研究中心 | Exhaust device and method based on separately excited piezoelectric element |
| CN114280141B (en) * | 2021-12-28 | 2023-06-27 | 电子科技大学 | Lamb wave array device and atmospheric environment particle detection method thereof |
| CN115753730A (en) * | 2022-11-17 | 2023-03-07 | 成都理工大学 | Trace explosive detection device under multi-environment |
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