CN105258806A - Pyroelectric infrared detection unit and manufacture method thereof, and pyroelectric infrared detector - Google Patents
Pyroelectric infrared detection unit and manufacture method thereof, and pyroelectric infrared detector Download PDFInfo
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- CN105258806A CN105258806A CN201510730060.3A CN201510730060A CN105258806A CN 105258806 A CN105258806 A CN 105258806A CN 201510730060 A CN201510730060 A CN 201510730060A CN 105258806 A CN105258806 A CN 105258806A
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Abstract
The invention discloses a pyroelectric infrared detection unit. The pyroelectric infrared detection unit comprises a ceramic substrate, a lithium tantalite wafer, a lower electrode layer, an upper electrode layer, a transition layer, a dielectric layer and an adsorption layer, wherein the lower electrode layer is formed at the first surface of the lithium tantalite wafer, is composed of a porous black metal film, and makes contact with the ceramic substrate; the upper electrode is formed at the second surface of the lithium tantalite wafer, and composed of a porous black metal film; the transition layer is formed on the upper electrode layer; the dielectric layer is formed on the transition layer; and the transition layer is formed on the dielectric layer. The lower electrode layer of a porous structure is high in the porosity, the heat conductivity is low, and thermal loss can be reduced; and a corresponding pyroelectric infrared detector can absorb more infrared and Terahertz radiation and is lower in the thermal loss, and performance of the pyroelectric infrared detector is improved.
Description
Technical field
The present invention relates to pyroelectric infrared detector technical field, especially relate to a kind of rpyroelectric infrared probe unit and manufacture method and pyroelectric infrared detector thereof.
Background technology
Wide spectral pyroelectric detector utilizes the pyroelectric effect detection infrared radiation of pyroelectricity material and the receiving device of terahertz emission.There is different electric dipole moments in dielectric material, one of them produces because intermolecular positive and negative charge center does not overlap, and this dipole moment is called intrinsic electric dipoles square.Pyroelectricity material has self poling effect, even if when not having external electric field, also there is electric dipole moment.After single pyroelectricity material accepts to be detected the infrared radiation of object, its temperature changes, thus the Distance geometry bond angle between dipole changes.Polarization intensity size equals the dipole moment of unit volume, and it is directly proportional to the surface charge appeared in crystalline electrode surface unit area, therefore can carry out by the size of measuring surface electric charge the infrared energy that detecting object gives off.
Pyroelectric detector has the advantage that other infrared eyes a lot of do not possess.First, pyroelectric detector can detect the radiation that any detection unit changes, and such as from X ray to microwave, even particle is all detectable; Secondly, its frequency of operation is the widest, such as, can be operated in the low frequency range of several hertz even lower, also can be operated in the high frequency region of tens thousand of hertz.In addition, because pyroelectricity signal is proportional to the rate of temperature change of device, therefore its response speed is very fast.And pyroelectric detector does not need refrigeration, do not require external biased, reliability is high, can work long hours, and outputs signal as full TV is compatible.
The many use potteries of existing pyroelectric infrared detector and monocrystal material preparation, general employing hybrid integrated method, adopts the methods such as ion beam is thinning, chemical corrosion can obtain the thin slice of some tens of pm.But the thermal loss of existing pyroelectric infrared detector is larger.
Summary of the invention
An object of the present invention be to provide a kind of can reduce thermal loss rpyroelectric infrared probe unit and manufacture method and pyroelectric infrared detector thereof.
Technical scheme disclosed by the invention comprises:
Provide a kind of pyroelectric detect unit, comprising: ceramic substrate; Lithium tantalate wafer, described lithium tantalate wafer comprises first surface and the second surface contrary with described first surface; Lower electrode layer, described lower electrode layer is formed on the first surface of described lithium tantalate wafer, and described lower electrode layer is formed by porous dark fund metallic film, and wherein said lower electrode layer contacts with described ceramic substrate; Upper electrode layer, described upper electrode layer is formed on the second surface of described lithium tantalate wafer, and described upper electrode layer is formed by dark fund metallic film; Transition bed, described transition bed is formed on described upper electrode layer, and described transition bed is formed by Ferrite Material; Dielectric layer, described dielectric layer is formed on described transition bed, and described dielectric layer is formed by silicon nitride material; Absorption layer, described absorption layer is formed on described dielectric layer, and described absorption layer is formed by dark fund metallic film.
In some embodiments of the present invention, described upper electrode layer is formed by porous dark fund metallic film.
In some embodiments of the present invention, the thickness of described lower electrode layer is 180-220 nanometer.
In some embodiments of the present invention, the thickness of described upper electrode layer is 8-10 nanometer.
Additionally provide a kind of method manufacturing pyroelectric detect unit in embodiments of the invention, comprising: prepare lithium tantalate wafer, described lithium tantalate wafer comprises first surface and the second surface contrary with described first surface; On the first surface of described lithium tantalate wafer, sputtering forms porous dark fund metallic film, forms lower electrode layer; The second surface of described lithium tantalate wafer is formed dark fund metallic film, forms upper electrode layer; Spin coating Ferrite Material on described upper electrode layer, forms transition bed; Spin coating silicon nitride material on described transition bed, forms dielectric layer; On described dielectric layer, sputtering forms dark fund metallic film, forms absorption layer; Described lithium tantalate wafer is placed in ceramic substrate, described lower electrode layer is contacted with described ceramic substrate.
In some embodiments of the present invention, the second surface of described lithium tantalate wafer is formed dark fund metallic film and comprises: sputtering forms porous dark fund metallic film on the second surface of described lithium tantalate wafer, forms described upper electrode layer.
In some embodiments of the present invention, the thickness of described lower electrode layer is 180-220 nanometer.
In some embodiments of the present invention, the thickness of described upper electrode layer is 8-10 nanometer.
Additionally provide a kind of pyroelectric infrared detector in embodiments of the invention, it comprises one or more aforesaid rpyroelectric infrared probe unit.
In embodiments of the invention, lower electrode layer is the structure of porous, and have larger porosity, therefore pyroconductivity is lower, can reduce thermal loss; Fine and close dark fund metallic particles can effectively reduce lithium tantalate surfaceness, improves the interface of itself and electrode; And ferrite film can reduce leakage current density and the dielectric loss of lithium tantalate effectively as cushion; Lithium tantalate has good pyroelectric effect, can as the first material of sensitivity.Therefore the pyroelectric detector in the embodiment of the present invention can be more absorption infrared radiation and terahertz emission, there is less thermal loss, thus emittance can be utilized by pyroelectric crystal largely, and improve the electric property of device, make detector have excellent performance.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the method for the manufacture pyroelectric detect unit of some embodiments of the invention.
Fig. 2 is the structural representation sketch of the pyroelectric detect unit of some embodiments of the invention.
Embodiment
Describe the pyroelectric detect unit of embodiments of the invention and the structure of pyroelectric detector thereof in detail below in conjunction with accompanying drawing and manufacture the concrete steps of method of this pyroelectric detect unit.
Fig. 1 is the schematic flow sheet of the method for the manufacture pyroelectric detect unit of some embodiments of the invention.Fig. 2 is the structural representation sketch of the pyroelectric detect unit of some embodiments of the invention.
With reference to figure 1 and Fig. 2, manufacture in the method for pyroelectric detect unit in some embodiments of the present invention, in step 10, lithium tantalate wafer 3 can be prepared.Such as, in some embodiments, can grind and polishing lithium tantalate wafer, thus the lithium tantalate wafer 3 required for obtaining.The thickness of this lithium tantalate wafer 3 can set according to actual conditions.Such as, in some embodiments, the thickness of lithium tantalate wafer 3 can be 9.5 to 10.5 microns, and such as, in an embodiment, the thickness of lithium tantalate wafer 3 can be 10 microns.
In these embodiments, lithium tantalate wafer 3 can comprise first surface (being the lower surface of lithium tantalate wafer 3 in the example of Fig. 2) and the second surface contrary with this first surface (being the upper surface of lithium tantalate wafer 3 in the example of Fig. 2).
Then, in a step 11, lower electrode layer 2 can be formed on the first surface of lithium tantalate wafer.Lower electrode layer 2 can be formed by the dark fund metallic film of porous.Such as, in some embodiments, the method for sputtering (such as, d.c. sputtering) can be used by dark fund metal sputtering on the first surface of lithium tantalate wafer 3.This sputter procedure is carried out in a nitrogen environment.To comprise porous structure in the dark fund metallic film that this sputter procedure is formed, the dark fund metallic film namely formed is the dark fund metallic film of porous.Therefore, by sputtering method, define porous dark fund metallic film on the first surface, this porous dark fund metallic film is lower electrode layer 2.
In some embodiments of the present invention, this dark fund metal is gold.
In some embodiments of the present invention, the thickness of lower electrode layer 2 can be 180 to 220 nanometers.Such as, in an embodiment, the thickness of lower electrode layer 2 can be 200 nanometers.
In addition, in step 12, upper electrode layer 4 can be formed on the second surface of lithium tantalate wafer 3.Upper electrode layer 4 can be formed by dark fund metallic film.Such as, in some embodiments, can form dark fund metallic film on the second surface of lithium tantalate wafer 3, this dark fund metallic film is upper electrode layer 4.
In some embodiments, the dark fund metallic film forming upper electrode layer 4 also can be the dark fund metallic film of porous, and namely upper electrode layer 4 also can be formed by porous dark fund metallic film.Such as, in some embodiments, also can by sputtering (such as, d.c. sputtering) method by dark fund metal sputtering on the second surface of lithium tantalate wafer 3, thus forming porous dark fund metallic film on the second surface, this porous dark fund metallic film is upper electrode layer 4.
In some embodiments of the present invention, the thickness of upper electrode layer 4 can be 8-10 nanometer.
In embodiments of the invention, the order of step 11 and step 12 does not limit, and first can perform step 11, or also first can perform step 12, or the two can carry out simultaneously.
After defining upper electrode layer 4, in step 13, transition bed 5 can be formed on upper electrode layer 4.Transition bed 5 can be formed by Ferrite Material.Such as, in some embodiments, with the method spin coating Ferrite Material of spin coating on upper electrode layer 4, thus transition bed 5 can be formed.
In some embodiments of the present invention, the thickness of transition bed 5 can be 9-11 nanometer.Such as, in an embodiment, the thickness of transition bed 5 can be 10 nanometers.
After defining transition bed 5, at step 14, dielectric layer 6 can be formed on transition bed 5.Dielectric layer 6 can be formed by silicon nitride material.Such as, in some embodiments, with the method spin coating silicon nitride material of spin coating on transition bed 5, thus dielectric layer 5 can be formed.
In some embodiments of the present invention, the thickness of dielectric layer 5 can be 4.5-5.5 nanometer.Such as, in an embodiment, the thickness of dielectric layer 5 can be 5 nanometers.
After defining dielectric layer 6, in step 15, absorption layer 7 can be formed on dielectric layer 6.Absorption layer 7 can be formed by dark fund metallic film.Such as, in some embodiments, can by the method for sputtering (such as, d.c. sputtering) by dark fund metal sputtering on dielectric layer 6, thus form dark fund metallic film on this dielectric layer 6, this dark fund metallic film is absorption layer 4.
In some embodiments of the present invention, the thickness of absorption layer 7 can be 8-10 nanometer.
In embodiments of the invention, after defining lower electrode layer 2, in step 16, the lithium tantalate wafer 3 defining lower electrode layer 2 can be placed in ceramic substrate 1, lower electrode layer 2 is contacted with ceramic substrate 1.
Like this, by aforesaid step, can obtain pyroelectric detect unit of the present invention, this pyroelectric detect unit can as of a pyroelectric detector probe unit.
Therefore, as shown in Figure 2, in some embodiments of the present invention, manufactured pyroelectric detect unit can comprise ceramic substrate 1, lower electrode layer 2, lithium tantalate wafer 3, upper electrode layer 4, transition bed 5, dielectric layer 6 and absorption layer 7.
Lithium tantalate wafer 3 can comprise first surface and the second surface contrary with first surface.Lower electrode layer 2 can be formed on the first surface of lithium tantalate wafer 3, and this lower electrode layer 2 can be formed by porous dark fund metallic film.This lower electrode layer 2 contacts with ceramic substrate 1.
Upper electrode layer 4 can be formed on the second surface of lithium tantalate wafer 3, and upper electrode layer 4 can be formed by dark fund metallic film.In some embodiments, upper electrode layer 4 also can be formed by porous dark fund metallic film.
Transition bed 5 is formed on upper electrode layer 4, and it can be formed by Ferrite Material.Dielectric layer 6 is formed on transition bed 5, and it can be formed by silicon nitride material.Absorption layer 7 is formed on dielectric layer 6, and it can be formed by dark fund metallic film.
As mentioned before, the pyroelectric detect unit in the embodiment of the present invention can as the probe unit in pyroelectric detector.Therefore, in some embodiments of the present invention, additionally provide a kind of pyroelectric detector, this pyroelectric detector can comprise one or more previously described pyroelectric detect unit.When pyroelectric detector comprises multiple pyroelectric detect unit, these pyroelectric detect unit can according to required arrayed (such as, being arranged in one dimension or two-dimensional array).
In embodiments of the invention, lower electrode layer is the structure of porous, and have larger porosity, therefore pyroconductivity is lower, can reduce thermal loss; Fine and close dark fund metallic particles can effectively reduce lithium tantalate surfaceness, improves the interface of itself and electrode; And ferrite film can reduce leakage current density and the dielectric loss of lithium tantalate effectively as cushion; Lithium tantalate has good pyroelectric effect, can as the first material of sensitivity.Therefore the pyroelectric detector in the embodiment of the present invention can be more absorption infrared radiation and terahertz emission, there is less thermal loss, thus emittance can be utilized by pyroelectric crystal largely, and improve the electric property of device, make detector have excellent performance.
Described the present invention by specific embodiment above, but the present invention is not limited to these specific embodiments.It will be understood by those skilled in the art that and can also make various amendment, equivalent replacement, change etc. to the present invention, as long as these conversion do not deviate from spirit of the present invention, all should within protection scope of the present invention.In addition, " embodiment " described in above many places represents different embodiments, can certainly by its all or part of combination in one embodiment.
Claims (9)
1. a pyroelectric detect unit, is characterized in that, comprising:
Ceramic substrate;
Lithium tantalate wafer, described lithium tantalate wafer comprises first surface and the second surface contrary with described first surface;
Lower electrode layer, described lower electrode layer is formed on the first surface of described lithium tantalate wafer, and described lower electrode layer is formed by porous dark fund metallic film, and wherein said lower electrode layer contacts with described ceramic substrate;
Upper electrode layer, described upper electrode layer is formed on the second surface of described lithium tantalate wafer, and described upper electrode layer is formed by dark fund metallic film;
Transition bed, described transition bed is formed on described upper electrode layer, and described transition bed is formed by Ferrite Material;
Dielectric layer, described dielectric layer is formed on described transition bed, and described dielectric layer is formed by silicon nitride material;
Absorption layer, described absorption layer is formed on described dielectric layer, and described absorption layer is formed by dark fund metallic film.
2. pyroelectric detect unit as claimed in claim 1, is characterized in that: described upper electrode layer is formed by porous dark fund metallic film.
3. pyroelectric detect unit as described in claim 1 or 2, is characterized in that: the thickness of described lower electrode layer is 180-220 nanometer.
4. pyroelectric detect unit as described in claim 1 or 2, is characterized in that: the thickness of described upper electrode layer is 8-10 nanometer.
5. manufacture a method for pyroelectric detect unit, it is characterized in that, comprising:
Prepare lithium tantalate wafer, described lithium tantalate wafer comprises first surface and the second surface contrary with described first surface;
On the first surface of described lithium tantalate wafer, sputtering forms porous dark fund metallic film, forms lower electrode layer;
The second surface of described lithium tantalate wafer is formed dark fund metallic film, forms upper electrode layer;
Spin coating Ferrite Material on described upper electrode layer, forms transition bed;
Spin coating silicon nitride material on described transition bed, forms dielectric layer;
On described dielectric layer, sputtering forms dark fund metallic film, forms absorption layer;
Described lithium tantalate wafer is placed in ceramic substrate, described lower electrode layer is contacted with described ceramic substrate.
6. method as claimed in claim 5, is characterized in that, the second surface of described lithium tantalate wafer is formed dark fund metallic film and comprises: on the second surface of described lithium tantalate wafer, sputtering forms porous dark fund metallic film, forms described upper electrode layer.
7. the pyroelectric detect unit as described in claim 5 or 6, is characterized in that: the thickness of described lower electrode layer is 180-220 nanometer.
8. the pyroelectric detect unit as described in claim 5 or 6, is characterized in that: the thickness of described upper electrode layer is 8-10 nanometer.
9. a pyroelectric infrared detector, is characterized in that: comprise one or more as the rpyroelectric infrared probe unit in Claims 1-4 as described in any one.
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| CN106197688A (en) * | 2016-06-29 | 2016-12-07 | 电子科技大学 | A kind of pyroelectric infrared detector |
| CN106289540A (en) * | 2016-07-14 | 2017-01-04 | 深圳通感微电子有限公司 | Infrared thermal release electric sensing unit and pyroelectric infrared sensor |
| CN107478342A (en) * | 2017-07-17 | 2017-12-15 | 华中科技大学 | A kind of lithium tantalate arrowband detector and preparation method thereof |
| CN113188669A (en) * | 2021-04-29 | 2021-07-30 | 上海翼捷工业安全设备股份有限公司 | Infrared absorption composite membrane structure and carbon dioxide pyroelectric infrared detector |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106197688A (en) * | 2016-06-29 | 2016-12-07 | 电子科技大学 | A kind of pyroelectric infrared detector |
| CN106289540A (en) * | 2016-07-14 | 2017-01-04 | 深圳通感微电子有限公司 | Infrared thermal release electric sensing unit and pyroelectric infrared sensor |
| CN106289540B (en) * | 2016-07-14 | 2019-03-01 | 深圳通感微电子有限公司 | Infrared thermal release electric sensing unit and pyroelectric infrared sensor |
| CN107478342A (en) * | 2017-07-17 | 2017-12-15 | 华中科技大学 | A kind of lithium tantalate arrowband detector and preparation method thereof |
| CN107478342B (en) * | 2017-07-17 | 2019-09-13 | 华中科技大学 | A kind of lithium tantalate narrowband detector and preparation method thereof |
| CN113188669A (en) * | 2021-04-29 | 2021-07-30 | 上海翼捷工业安全设备股份有限公司 | Infrared absorption composite membrane structure and carbon dioxide pyroelectric infrared detector |
| CN113188669B (en) * | 2021-04-29 | 2023-06-27 | 上海翼捷工业安全设备股份有限公司 | Infrared absorption composite film structure and carbon dioxide pyroelectric infrared detector |
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