CN107478342A - A kind of lithium tantalate arrowband detector and preparation method thereof - Google Patents
A kind of lithium tantalate arrowband detector and preparation method thereof Download PDFInfo
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- CN107478342A CN107478342A CN201710579047.1A CN201710579047A CN107478342A CN 107478342 A CN107478342 A CN 107478342A CN 201710579047 A CN201710579047 A CN 201710579047A CN 107478342 A CN107478342 A CN 107478342A
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- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 title claims abstract description 79
- 238000002360 preparation method Methods 0.000 title abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 66
- 239000010703 silicon Substances 0.000 claims abstract description 66
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 71
- 239000010931 gold Substances 0.000 claims description 71
- 229910052737 gold Inorganic materials 0.000 claims description 71
- 239000011265 semifinished product Substances 0.000 claims description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 41
- 229920002120 photoresistant polymer Polymers 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 30
- 238000010521 absorption reaction Methods 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 19
- 238000005566 electron beam evaporation Methods 0.000 claims description 13
- 238000010894 electron beam technology Methods 0.000 claims description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 239000003292 glue Substances 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- 238000004528 spin coating Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000007687 exposure technique Methods 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 7
- 238000011161 development Methods 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 3
- 239000000047 product Substances 0.000 claims 3
- 238000001514 detection method Methods 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 25
- 238000010276 construction Methods 0.000 description 24
- 238000001228 spectrum Methods 0.000 description 18
- 230000001413 cellular effect Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 11
- 239000004926 polymethyl methacrylate Substances 0.000 description 11
- 238000004088 simulation Methods 0.000 description 10
- 239000006096 absorbing agent Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 230000005616 pyroelectricity Effects 0.000 description 6
- 241000790917 Dioxys <bee> Species 0.000 description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 5
- 229910003978 SiClx Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052744 lithium Inorganic materials 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 240000008042 Zea mays Species 0.000 description 2
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 description 2
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 235000005822 corn Nutrition 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012822 chemical development Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/208—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices superconductive
Abstract
The invention discloses a kind of lithium tantalate arrowband detector and preparation method thereof, belong to pyroelectric infrared detector field.Detector includes detector body and the super surface texture of electromagnetism, the super surface texture of electromagnetism is arranged in detector body, wherein, detector body include set from bottom to up silicon submount support, bottom electrode, lithium tantalate wafer, Top electrode, the super surface texture of electromagnetism includes setting golden backboard, dielectric layer and antenna from bottom to top, wherein, golden backboard and Top electrode are same object, and both share.Present invention also offers the preparation method of lithium tantalate arrowband detector, the present invention does not have the defects of wavelength selectivity to be improved traditional pyroelectric detector using super sufacing, the detection to specific wavelength can be enough realized in a wavelength range, and simplifies the preparation flow of infrared detector.
Description
Technical field
The invention belongs to pyroelectric infrared detector field, is related to a kind of lithium tantalate arrowband detection based on super surface texture
Device and preparation method.
Background technology
Thermal-infrared sensing is a kind of key technology of extensive application with sensing.With the light of expensive low-temperature working
Electrical resistivity survey examining system is compared, and thermal infrared detector has a lower cost, simpler technological process, but due to thermal detector only
Can be to thermal response, without wavelength selectivity, it is impossible to specific single wavelength is detected, sensitivity is poor compared to photodetector,
This limits use of the thermal infrared detector in wide range of areas to a certain extent.
In recent years, super surface has become a study hotspot as a kind of brand-new electromagnetic material.The electromagnetism on super surface
Characteristic is substantially unrelated with the property of its component material, and relevant with its internal micro-structural.When incident light and this layer of micro-structural phase
During interaction, surface phasmon can be produced, it is possible to achieve the focusing and enhancing of light field under nano-scale.By this property,
Many micronano optical equipment based on super surface are produced out, such as perfect wave-absorber, perfect lens, complex refractivity index material
Deng.By adjusting the microstructure characteristic parameter on super surface, can realize makes Effect on Detecting optimal.
At present, also thermal-infrared sensing and sensing technology and super sufacing are not combined together, to improve existing skill
The defects of art.
The content of the invention
For prior art defect and Improvement requirement, this application provides a kind of lithium tantalate heat based on super surface texture to release
Electric arrowband detector and preparation method thereof, it is therefore intended that, there is no wavelength to traditional pyroelectric detector using super sufacing
The defects of selective, is improved, and the detection to specific wavelength can be enough realized in a wavelength range, and simplify infrared
The preparation flow of detector.
To achieve the above object, according to one aspect of the present invention, there is provided a kind of lithium tantalate arrowband detector, it includes
Detector body and the super surface texture of electromagnetism, the super surface texture of electromagnetism are arranged in detector body, wherein, detector body bag
Include the silicon submount support set from bottom to up, bottom electrode, lithium tantalate wafer, Top electrode, the super surface texture of electromagnetism include from lower and
It is upper that golden backboard, dielectric layer and antenna are set, wherein, golden backboard and Top electrode are same object, and both share.
In one embodiment of the invention, the antenna includes cross gold antenna or disk gold antenna.
In one embodiment of the invention, the dielectric layer includes dielectric layer silicon or dielectric layer silica.
In one embodiment of the invention, the super surface texture of electromagnetism include two kinds, one kind be golden backboard+dielectric layer silicon+
Cross gold antenna, another kind are golden backboard+dielectric layer silica+disk gold antennas.
In one embodiment of the invention, silicon submount support includes four a quarter silicon columns and silicon submount, passes through four
Electromagnetism is surpassed the bottom electrode of surface texture and detector body by individual a quarter silicon column, lithium tantalate wafer is fixed on silicon base
On.A quarter silicon column refers to the column that cross section is quadrant.
In one embodiment of the invention, the super surface texture dielectric layer silicon of the electromagnetism or dielectric layer silica
Thickness be 50nm~500nm.
In one embodiment of the invention, cross gold antenna or disk gold antenna in the super surface texture of the electromagnetism
Thickness is 40nm~70nm.
In one embodiment of the invention, the thickness of the lithium tantalate wafer is 70 μm~80 μm, preferably 75 μm.
According to the second aspect of the invention, there is provided a kind of method for preparing lithium tantalate arrowband as described above detector,
Its feature exists, and it comprises the following steps：
S1：Lithium tantalate wafer substrate is chosen, using electron beam evaporation process or magnetron sputtering technique in lithium tantalate wafer
Upper and lower respectively grows one layer of gold, obtains the first semi-finished product；
S2：In above-mentioned first semi-finished product upper surface one layer is grown using magnetron sputtering technique or chemical vapor deposition method
Silicon or silica, obtain the second semi-finished product；
S3：In the second semi-finished product upper surface spin coating photoresist, the 3rd semi-finished product are obtained；
S4：By electron beam exposure technique, using designed cross gold antenna domain or disk aerial domain to
The photoetching glue surface exposure of three semi-finished product, forms the photoresist layer with cross or disk pattern, so as to by pattern transfer to the
On the photoresist of three semi-finished product；
S5：Development treatment is performed to the 3rd semi-finished product after exposure, leaves the photoresist of the cross having or disc structure
Layer, obtain the 4th semi-finished product；
S6：On the 4th semi-finished product, one layer of setting thickness is grown by electron beam evaporation process or magnetron sputtering technique
Gold, obtain golden antenna；
S7：Lift-off processing is carried out to the sample after growing golden antenna using acetone, to remove unnecessary photoresist, obtains the
Five semi-finished product；
S8：5th semi-finished product are fixed on silicon submount with four a quarter silicon columns, and are packaged, so far obtain tantalum
Sour lithium arrowband detector.
In one embodiment of the invention, the super surface texture size adjustable of the electromagnetism, by adjusting cross gold antenna
Rod is long or the radius of disk aerial can realize the high-selenium corn of different-waveband.For example, a length of 500nm of cross gold aerial rod, rod
A width of 100nm, cellular construction cycle are 700nm, and dielectric layer silicon thickness is 100nm, and cross gold antenna thickness is 50nm, absorb ripple
A length of 4.18 μm；Change the cross a length of 600nm of gold aerial rod, absorbing wavelength is 5.03 μm；Disc radius is 600nm, titanium dioxide
The thickness of silicon is 100nm, and golden disc thickness is 50nm, and the cellular construction cycle is 2 μm, and absorbing wavelength is 3.94 μm, when disk half
When footpath is changed to 700nm, absorbing wavelength is 4.49 μm.Change the thickness of cycle and dielectric layer, absorbing peak amplitude can respective change.
A kind of lithium tantalate arrowband detector preparation method bag based on cross and the super surface texture of disk disclosed by the invention
Include following steps：Lithium tantalate wafer is chosen, is respectively prepared in upper and lower surface by electron beam evaporation equipment or magnetron sputtering apparatus
The gold of one layer of setting thickness；By magnetron sputtering apparatus either chemical vapor depsotition equipment prepare one layer setting thickness silicon or
Silica；Spin coating PMMA exposes glue；Design criss-cross construction or disc structure array, the size ginseng of accurate control structure
Number, designed structure is transferred to by PMMA by electron beam exposure apparatus and exposes glue；Development, it is fixed；Steamed and set by electron beam
Standby or magnetron sputtering apparatus grows the gold of one layer of setting thickness；Remove photoresist processing；By the detector of preparation with four a quarters
Silicon column is fixed on silicon submount, and is packaged.Now, on the pyroelectricity material lithium tantalate wafer formed with upper/lower electrode
Grown an infrared absorber, this infrared absorber both can be golden backboard+dielectric layer silicon+cross gold antenna or
Golden backboard+dielectric layer silica+disk gold antenna.
Resonance effect of the present invention using infrared absorber to matching wavelength light, realizes the high-selenium corn to special wavelength light,
The electromagnetic energy of absorption is converted to Joule heat and passes to pyroelectric lithium tantalite chip, then reads electric signal by upper/lower electrode,
Realize the detection to setting wavelength light.
The present invention absorbs the infrared light of different wave length by adjusting the geometric parameter of infrared absorber, realizes to different ripples
The detection of long infrared light.
In general, by the contemplated above technical scheme of the present invention compared with prior art, it can obtain down and show
Beneficial effect：
Traditional selective thermal detector based on discrete optical filter, its thermal detector have sound to broadband photo-thermal
Should, itself to wavelength without selectivity, it is necessary to assembling upper filter in face could realize the selectivity of wavelength before the detectors,
Which increase the volume of detector, while make detector more complicated.
Lithium tantalate arrowband detector proposed by the present invention based on super surface can be realized to some in the range of broadband
The hot-probing of narrowband wavelength light, because, the detector in the application is by the infrared absorber collection with wavelength selectivity
It is made on pyroelectricity material.The infrared absorber functionally equivalent to optical filter, is easy to be integrated in hot material
On, while have near field humidification to light, absorption efficiency is high, and its corresponding detector sensitivity is high, and small volume, processing is simple,
Change the relevant parameter of infrared absorber simultaneously, can realize and the heat of different wave length is detected, functionally with a kind of hot-probing
Device instead of traditional thermal detector combination upper filter, simplifies infrared thermal detector technological process, lowers device cost,
Integrated level uprises.
Preparation method of the invention is ingenious in design, technique is simple, workable, and the explorer response of preparation is rapid, with
Upper advantage is advantageous to popularizing for the technology.
Brief description of the drawings
Fig. 1 is the lithium tantalate arrowband detector overall structure figure based on super surface cross antenna in the embodiment of the present invention；
Fig. 2 is the lithium tantalate arrowband detector overall structure figure based on super surface disc antenna in the embodiment of the present invention；
Fig. 3 is electron beam exposure technique domain cross antenna schematic diagram in the embodiment of the present invention；
Fig. 4 is electron beam exposure technique domain disk aerial schematic diagram in the embodiment of the present invention；
Fig. 5 is the infrared absorpting light spectra of embodiment 1 in the present invention；
Fig. 6 is the infrared absorpting light spectra of embodiment 2 in the present invention；
Fig. 7 is the infrared absorpting light spectra of embodiment 3 in the present invention；
Fig. 8 is the infrared absorpting light spectra of embodiment 4 in the present invention；
Fig. 9 is the infrared absorpting light spectra of embodiment 5 in the present invention；
Figure 10 is the infrared absorpting light spectra of embodiment 6 in the present invention；
Figure 11 is the infrared absorpting light spectra of embodiment 7 in the present invention；
Figure 12 is the infrared absorpting light spectra of embodiment 8 in the present invention；
Figure 13 is the infrared absorpting light spectra of embodiment 9 in the present invention；
Figure 14 is the infrared absorpting light spectra of embodiment 10 in the present invention；
Figure 15 be in the embodiment of the present invention lithium tantalate pyroelectricity material 0.98mW power single wavelength light source irradiation under
Temperature profile.
In all of the figs, identical reference is used for representing identical element or structure, wherein：
The support of 1 silicon submount, 2 bottom electrodes, 3 lithium tantalate wafers, 4 Top electrodes, 5 medium silicon, 6 medium silica, 7 crosses gold
Antenna, 8 disk gold antennas.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in each embodiment of invention described below
Conflict can is not formed each other to be mutually combined.
The content for a better understanding of the present invention, it is necessary to be illustrated to the principle of the present invention.In the present invention
In middle lithium tantalate arrowband panel detector structure, cross gold aerial array or disk aerial array interact with incident light, and produce
Surface phasmon, light field is focused on and strengthened under nano-scale, specific wavelength infrared light is produced resonance, this resonance
Oscillatory excitation metal structure makes free-carrier Absorption electromagnetic energy cause the decay of light, and the electromagnetic energy of decay is finally changed
Into Joule heat, then the Joule heat of generation is passed to lithium tantalate pyroelectricity material by golden backboard.When lithium tantalate is modulated
Infra-red radiation when, radiant heat flux by lithium tantalate absorb its internal temperature is changed, the change of temperature makes lithium tantalate
The Dipole moment of crystal changes, i.e. Ta5+ and Li+ change relative to the offset of center, is holding surface electricity
Neutrality, lithium tantalate surface can discharge the electric charge of absorption, positive and negative charge be discharged in upper and lower surface respectively, then by upper/lower electrode
Filter amplification circuit is transmitted to, reads electric signal, realizes the detection to setting wavelength.When the physical dimension for changing super surface, inhale
Receiving wavelength can change, then can realize the narrowband wavelength detection of wide spectrum.
Embodiment 1：
A kind of lithium tantalate arrowband detector based on super surface, each of which construction unit include silicon submount from top to bottom and
Support 1, lower gold electrode 2, lithium tantalate wafer 3, Top electrode 4, medium silicon 5, cross gold antenna 7, as shown in Figure 1.Wherein, cross gold
The a length of 350nm of rod of antenna, a width of 100nm of rod, cross gold antenna thickness are 50nm；The cellular construction cycle is 600nm；Centre is situated between
The thickness of matter layer silicon is 50nm；The thickness of golden backboard is 100nm.By numerical simulation, suction of the structure in infrared band is obtained
Spectrum is received, as shown in Figure 5, the absorption peak wavelength of the structure is at 3.24 microns.
Embodiment 2：
A kind of lithium tantalate arrowband detector based on super surface, each of which construction unit include silicon submount from top to bottom and
Support 1, lower gold electrode 2, lithium tantalate wafer 3, Top electrode 4, medium silicon 5, cross gold antenna 7, as shown in Figure 1.Wherein, cross gold
The a length of 500nm of rod of antenna, a width of 100nm of rod, cross gold antenna thickness are 50nm；The cellular construction cycle is 700nm；Centre is situated between
The thickness of matter layer silicon is 100nm；The thickness of golden backboard is 100nm.By numerical simulation, suction of the structure in infrared band is obtained
Spectrum is received, it will be appreciated from fig. 6 that the absorption peak wavelength of the structure is at 4.18 microns.
Embodiment 3：
A kind of lithium tantalate arrowband detector based on super surface, each of which construction unit include silicon submount from top to bottom and
Support 1, lower gold electrode 2, lithium tantalate wafer 3, Top electrode 4, medium silicon 5, cross gold antenna 7, as shown in Figure 1.Wherein, cross gold
The a length of 750nm of rod of antenna, a width of 100nm of rod, cross gold antenna thickness are 50nm；The cellular construction cycle is 1200nm；It is middle
The thickness of dielectric layer silicon is 200nm；The thickness of golden backboard is 100nm.By numerical simulation, the structure is obtained in infrared band
Absorption spectra, as shown in Figure 7, the absorption peak wavelength of the structure is at 5.8 microns.
Embodiment 4：
A kind of lithium tantalate arrowband detector based on super surface, each of which construction unit include silicon submount from top to bottom and
Support 1, lower gold electrode 2, lithium tantalate wafer 3, Top electrode 4, medium silicon 5, cross gold antenna 7, as shown in Figure 1.Wherein cross gold
The a length of 950nm of rod of antenna, a width of 100nm of rod, cross gold antenna thickness are 50nm；The cellular construction cycle is 1100nm；It is middle
The thickness of dielectric layer silicon is 200nm；The thickness of golden backboard is 100nm.By numerical simulation, the structure is obtained in infrared band
Absorption spectra, as shown in Figure 8, the absorption peak wavelength of the structure is at 7.45 microns.
Embodiment 5：
A kind of lithium tantalate arrowband detector based on super surface, each of which construction unit include silicon submount from top to bottom and
Support 1, lower gold electrode 2, lithium tantalate wafer 3, Top electrode 4, medium silicon 5, cross gold antenna 7, as shown in Figure 1.Wherein cross gold
The a length of 1500nm of rod of antenna, a width of 100nm of rod, cross gold antenna thickness are 50nm；The cellular construction cycle is 1900nm；It is middle
The thickness of dielectric layer silicon is 500nm；The thickness of golden backboard is 100nm.By numerical simulation, the structure is obtained in infrared band
Absorption spectra, as shown in Figure 9, the absorption peak wavelength of the structure is at 11.08 microns.
Embodiment 6：
A kind of lithium tantalate arrowband detector based on super surface, each of which construction unit include silicon submount from top to bottom and
Support 1, lower gold electrode 2, lithium tantalate wafer 3, Top electrode 4, medium silica 6, disk gold antenna 8, as shown in Figure 2.Wherein
A diameter of 726nm of disk aerial, disk aerial thickness are 50nm；The cellular construction cycle is 2000nm；Middle dielectric layer dioxy
The thickness of SiClx is 80nm；The thickness of golden backboard is 100nm.By numerical simulation, absorption of the structure in infrared band is obtained
Spectrum, as shown in Figure 10, the absorption peak wavelength of the structure is at 2.64 microns.
Embodiment 7：
A kind of lithium tantalate arrowband detector based on super surface, each of which construction unit include silicon submount from top to bottom and
Support 1, lower gold electrode 2, lithium tantalate wafer 3, Top electrode 4, medium silica 6, disk gold antenna 8, as shown in Figure 2.Wherein,
A diameter of 940nm of disk aerial, disk aerial thickness are 50nm；The cellular construction cycle is 2000nm；Middle dielectric layer dioxy
The thickness of SiClx is 80nm；The thickness of golden backboard is 100nm.By numerical simulation, absorption of the structure in infrared band is obtained
Spectrum, as shown in Figure 11, the absorption peak wavelength of the structure is at 3.33 microns.
Embodiment 8：
A kind of lithium tantalate arrowband detector based on super surface, each of which construction unit include silicon submount from top to bottom and
Support 1, lower gold electrode 2, lithium tantalate wafer 3, Top electrode 4, medium silica 6, disk gold antenna 8, as shown in Figure 2.Wherein,
A diameter of 1290nm of disk aerial, disk aerial thickness are 50nm；The cellular construction cycle is 2000nm；Middle dielectric layer dioxy
The thickness of SiClx is 80nm；The thickness of golden backboard is 100nm.By numerical simulation, absorption of the structure in infrared band is obtained
Spectrum, as shown in Figure 12, the absorption peak wavelength of the structure is at 4.26 microns.
Embodiment 9：
A kind of lithium tantalate arrowband detector based on super surface, each of which construction unit include silicon submount from top to bottom and
Support 1, lower gold electrode 2, lithium tantalate wafer 3, Top electrode 4, medium silica 6, disk gold antenna 8, as shown in Figure 2.Wherein,
A diameter of 2060nm of disk aerial, disk aerial thickness are 50nm；The cellular construction cycle is 3000nm；Middle dielectric layer dioxy
The thickness of SiClx is 100nm；The thickness of golden backboard is 100nm.By numerical simulation, absorption of the structure in infrared band is obtained
Spectrum, as shown in Figure 13, the absorption peak wavelength of the structure is at 5.73 microns.
Embodiment 10：
A kind of lithium tantalate arrowband detector based on super surface, each of which construction unit include silicon submount from top to bottom and
Support 1, lower gold electrode 2, lithium tantalate wafer 3, Top electrode 4, medium silica 6, disk gold antenna 8, as shown in Figure 2.Wherein,
A diameter of 3400nm of disk aerial, disk aerial thickness are 50nm；The cellular construction cycle is 4000nm；Middle dielectric layer dioxy
The thickness of SiClx is 110nm；The thickness of golden backboard is 100nm.By numerical simulation, absorption of the structure in infrared band is obtained
Spectrum, as shown in Figure 14, the absorption peak wavelength of the structure is at 7.46 microns.
The size of one array is generally 1mm or so, and the size of the most basic geometric units of a forming array is 2um
Left and right, so an array is by a most basic geometric units repeat hundreds of times in the in-plane direction, cellular construction
The size of the most basic geometric units of cycle i.e. forming array.
The lithium tantalate arrowband detector preparation method for surpassing surface in the present invention based on electromagnetism is as follows：
First, lithium tantalate wafer substrate is chosen.Specifically, first step acetone soln supersonic cleaning 3 minutes；Second step
With ethanol solution supersonic cleaning 3 minutes；Finally clean ultrasonically in deionized water 2 minutes, surface clean is done
Only in order to being subsequently deposited.
Then, the thick gold of 100nm is deposited in the substrate upper and lower surface of cleaning in deposited by electron beam evaporation coating machine respectively.Magnetic is used again
Control sputtering equipment or chemical vapor depsotition equipment grows the thick silicon dielectric layers or silica dioxide medium layer of one layer of 100nm.
Then, the super skin antenna array of electromagnetism of the cross or disk of some cycles structure is designed, and domain is made.
First uniform one layer of PMMA exposure glue of spin coating, spin-coating time 60 seconds, 2000 revs/min of spin coating machine speed, spin coating PMMA on substrate
The thickness of glue is about 400nm.
Fig. 3 is electron beam exposure technique domain cross antenna schematic diagram in the embodiment of the present invention；Fig. 4 is the embodiment of the present invention
Middle electron beam exposure technique domain disk aerial schematic diagram, wherein, in Fig. 3 and in Fig. 4, a is exposed portion, and b is non-exposure
Light part.
Followed by being toasted 3.5 minutes at 170 DEG C.Electron beam exposure apparatus is reused to be transferred to the pattern of domain
On the substrate of spin-coated PMMA exposures glue, electric current 3nA is exposed.By chemical development mode, the PMMA glue exposed is shown
Shadow, it is fixed, electron beam evaporation deposition, gold thick evaporation 50nm is then carried out using PMMA glue as mask.
Then, PMMA glue is removed by chemical method, now print surface forms cross gold aerial array.
Finally, the detector of preparation is fixed on silicon submount with four a quarter silicon columns, and be packaged.
In order to describe the lithium tantalate arrowband detector preparation method for surpassing surface in the present invention based on electromagnetism in detail, enter one below
The embodiment that step combines in detail below describes in detail.
Embodiment 11
The lithium tantalate arrowband detector preparation method for being surpassed surface based on electromagnetism of the present embodiment proposition is comprised the following steps：
S1：75um thickness lithium tantalate wafer substrates are chosen, using electron beam evaporation process in each life of lithium tantalate wafer upper and lower
Long one layer of gold, obtains the first semi-finished product, it is necessary to which the first semi-finished product are adhered into round electron beam with conducting resinl during actual process
On the disk of evaporation equipment, electron-beam evaporation rate 6nm/min；
S2：Chemical vapor deposition method growth layer of silicon dioxide, chemical gas are used in above-mentioned first semi-finished product upper surface
Mutually the speed of deposition silica is 50nm/min, obtains the second semi-finished product；
S3：In the second semi-finished product upper surface spin coating photoresist, photoresist is PMMA positive photoresists, model AR-P679.04, is revolved
Painting speed is 2000rpm, after by electric hot plate heat 170 degree baking 3 points of halfs, acquisition the 3rd semi-finished product；
S4：By electron beam exposure technique, the photoetching glue surface using designed disk aerial domain to the 3rd semi-finished product
Exposure, the photoresist layer with disk pattern is formed, so as to by the photoresist of pattern transfer to the 3rd semi-finished product；
S5：Development treatment is performed to the 3rd semi-finished product after exposure, is successively soaked in developer solution A, B, leaves the circle having
The photoresist layer of dish structure, obtain the 4th semi-finished product；
S6：On the 4th semi-finished product, the gold of one layer of 50nm thickness is grown by electron beam evaporation process, obtains golden antenna；
S7：Lift-off processing is carried out to the sample after growing golden antenna using acetone soln, can be carried out at certain heating
Reason, to remove unnecessary photoresist, obtain the 5th semi-finished product；
S8：5th semi-finished product are fixed on silicon submount with four a quarter silicon columns, and are packaged, so far obtain tantalum
Sour lithium arrowband detector.
Embodiment 12
The lithium tantalate arrowband detector preparation method for being surpassed surface based on electromagnetism of the present embodiment proposition is comprised the following steps：
S1：75um thickness lithium tantalate wafer substrates are chosen, are respectively grown in lithium tantalate wafer upper and lower using magnetron sputtering technique
One layer of gold, sputter rate 1nm/min, obtain the first semi-finished product；
S2：Magnetron sputtering technique silicon growth layer, the speed of magnetron sputtering silicon are used in above-mentioned first semi-finished product upper surface
For 7.5nm/min, the second semi-finished product are obtained；
S3：In the second semi-finished product upper surface spin coating photoresist, photoresist is PMMA positive photoresists, model AR-P679.04, is turned
Speed is 2000rmp, after by electric hot plate heat 170 degree baking 3 points of halfs, acquisition the 3rd semi-finished product；
S4：By electron beam exposure technique, the photoresist using designed cross gold antenna domain to the 3rd semi-finished product
Face exposes, and forms the photoresist layer with cross pattern, so as to by the photoresist of pattern transfer to the 3rd semi-finished product；
S5：Development treatment is performed to the 3rd semi-finished product after exposure, is successively soaked in developer solution A, B, leaves ten had
The photoresist layer of word structure, obtain the 4th semi-finished product；
S6：On the 4th semi-finished product, the gold of one layer of 50nm thickness is grown by magnetron sputtering technique, obtains golden antenna；
S7：Lift-off processing is carried out to the sample after growing golden antenna using acetone, certain heating can be carried out,
To remove unnecessary photoresist, the 5th semi-finished product are obtained；
S8：5th semi-finished product are fixed on silicon submount with four a quarter silicon columns, and are packaged, so far obtain tantalum
Sour lithium arrowband detector.
Embodiment 13
The lithium tantalate arrowband detector preparation method for being surpassed surface based on electromagnetism of the present embodiment proposition is comprised the following steps：
S1：75um thickness lithium tantalate wafer substrates are chosen, using electron beam evaporation process in each life of lithium tantalate wafer upper and lower
Long one layer of gold, electron-beam evaporation rate 6nm/min, obtains the first semi-finished product；
S2：Chemical vapor deposition method growth layer of silicon dioxide, deposition speed are used in above-mentioned first semi-finished product upper surface
Rate is 50nm/min, obtains the second semi-finished product；
S3：In the second semi-finished product upper surface spin coating photoresist, photoresist is PMMA positive photoresists, model AR-P679.04, is turned
Speed is 2000rmp, after by electric hot plate heat 170 degree baking 3 points of halfs, acquisition the 3rd semi-finished product；
S4：By electron beam exposure technique, the photoresist using designed cross gold antenna domain to the 3rd semi-finished product
Face exposes, and forms the photoresist layer with cross pattern, so as to by the photoresist of pattern transfer to the 3rd semi-finished product；
S5：Development treatment is performed to the 3rd semi-finished product after exposure, is successively soaked in developer solution A, B, leaves ten had
The photoresist layer of word structure, obtain the 4th semi-finished product；
S6：On the 4th semi-finished product, the gold of one layer of 50nm thickness is grown by electron beam evaporation process, obtains golden antenna；
S7：Lift-off processing is carried out to the sample after growing golden antenna using acetone, certain heating can be carried out, with
Unnecessary photoresist is removed, obtains the 5th semi-finished product；
S8：5th semi-finished product are fixed on silicon submount with four a quarter silicon columns, and are packaged, so far obtain tantalum
Sour lithium arrowband detector.
Figure 15 be in the embodiment of the present invention lithium tantalate pyroelectricity material 0.98mW power single wavelength light source irradiation under
Temperature profile, wherein, the lithium tantalate pyroelectricity material length of side is 1mm, and black curve data are taken among lithium tantalate upper surface
One transversal, take the position on this transversal and steady temperature distributed intelligence.As seen from the figure, in the material between position temperature
Highest is spent, temperature rise is 0.215 degree, and heating is more apparent.
Detector prepared by the inventive method uses the super surface cross optical antenna array of electromagnetism and lithium tantalate material conduct
Primary structure, preparation technology is simple, cost is low.Meanwhile the super surface cross optical antenna array structure of electromagnetism has narrow-band filtering
Characteristic, and Wavelength tunable, are easy to integra-tion application.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, all any modification, equivalent and improvement made within the spirit and principles of the invention etc., all should be included
Within protection scope of the present invention.
Claims (10)
1. a kind of lithium tantalate arrowband detector, it is characterised in that it includes detector body and the super surface texture of electromagnetism, and electromagnetism surpasses
Surface texture is arranged in detector body, wherein,
The silicon submount that detector body includes setting from bottom to up supports (1), bottom electrode (2), lithium tantalate wafer (3), Top electrode
(4),
The super surface texture of electromagnetism includes setting golden backboard, dielectric layer and antenna from bottom to top,
Wherein, golden backboard and Top electrode are same object, and both share.
2. a kind of lithium tantalate arrowband as claimed in claim 1 detector, it is characterised in that the antenna includes cross gold antenna
Or disk gold antenna (8) (7).
3. a kind of lithium tantalate arrowband as claimed in claim 1 detector, it is characterised in that the dielectric layer includes dielectric layer silicon
Or dielectric layer silica (6) (5).
4. a kind of lithium tantalate arrowband as claimed in claim 1 detector, it is characterised in that the super surface texture of electromagnetism includes two
Kind, one kind is golden backboard+dielectric layer silicon+cross gold antenna, and another kind is golden backboard+dielectric layer silica+disk gold antenna.
5. a kind of lithium tantalate arrowband as claimed in claim 1 detector, it is characterised in that silicon submount support includes four four points
One of silicon column and silicon submount, electromagnetism is surpassed into surface texture and the bottom electrode of detector body by four a quarter silicon columns
(2), lithium tantalate wafer (3) is fixed on a silicon substrate,
A quarter silicon column refers to the column that cross section is quadrant.
6. a kind of lithium tantalate arrowband detector according to claim 3, it is characterised in that in the super surface texture of electromagnetism
The thickness of dielectric layer silicon (5) or dielectric layer silica (6) is 50nm~500nm.
7. a kind of lithium tantalate arrowband detector according to claim 2, it is characterised in that in the super surface texture of electromagnetism
The thickness of cross gold antenna (7) or disk gold antenna (8) is 40nm~70nm.
8. a kind of lithium tantalate arrowband detector according to claim 1, it is characterised in that the lithium tantalate wafer (2)
Thickness is 70 μm~80 μm, preferably 75 μm.
9. a kind of method for preparing the lithium tantalate arrowband detector as described in one of claim 1-8, its feature exist, it includes as follows
Step：
S1：Lithium tantalate wafer substrate is chosen, using electron beam evaporation process or magnetron sputtering technique above and below lithium tantalate wafer
Side respectively grows one layer of gold, obtains the first semi-finished product；
S2：Above-mentioned first semi-finished product upper surface using magnetron sputtering technique or chemical vapor deposition method silicon growth layer or
Person's silica, obtain the second semi-finished product；
S3：In the second semi-finished product upper surface spin coating photoresist, the 3rd semi-finished product are obtained；
S4：By electron beam exposure technique, using designed cross gold antenna domain or disk aerial domain to the 3rd half
The photoetching glue surface exposure of finished product, forms the photoresist layer with cross or disk pattern, so as to by pattern transfer to the 3rd half
On the photoresist of finished product；
S5：Development treatment is performed to the 3rd semi-finished product after exposure, the photoresist layer of the cross having or disc structure is left, obtains
Obtain the 4th semi-finished product；
S6：On the 4th semi-finished product, the gold of one layer of setting thickness is grown by electron beam evaporation process or magnetron sputtering technique,
Obtain golden antenna；
S7：Lift-off processing is carried out to the sample after growing golden antenna using acetone, to remove unnecessary photoresist, obtains the 5th half
Finished product；
S8：5th semi-finished product are fixed on silicon submount with four a quarter silicon columns, and are packaged, so far obtain lithium tantalate
Arrowband detector.
10. method as claimed in claim 9, it is characterised in that by the rod length or disk aerial that adjust cross gold antenna
Radius can realize absorption of the detector to different-waveband wavelength.
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| CN108267482A (en) * | 2017-12-22 | 2018-07-10 | 华中科技大学 | A kind of lithium tantalate narrow band gas detector and preparation method thereof |
| CN108831988A (en) * | 2018-06-12 | 2018-11-16 | 中国科学院上海技术物理研究所 | A kind of adjustable non-refrigeration type terahertz detector of working frequency |
| CN112054069A (en) * | 2020-08-27 | 2020-12-08 | 东南大学 | Integrated photoelectric detector based on disc super-surface structure narrow-band light filtering |
| CN113465736A (en) * | 2021-06-30 | 2021-10-01 | 中国电子科技集团公司信息科学研究院 | On-chip integrated infrared detector |
| CN114199383A (en) * | 2021-11-24 | 2022-03-18 | 华中科技大学 | Thermopile narrow-band detector based on plasmon composite microcavity and preparation method thereof |
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| CN106197668A (en) * | 2016-07-22 | 2016-12-07 | 华中科技大学 | A kind of arrowband infrared detecting chip and preparation method thereof |
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| CN105258806A (en) * | 2015-11-02 | 2016-01-20 | 电子科技大学 | Pyroelectric infrared detection unit and manufacture method thereof, and pyroelectric infrared detector |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108267482A (en) * | 2017-12-22 | 2018-07-10 | 华中科技大学 | A kind of lithium tantalate narrow band gas detector and preparation method thereof |
| CN108831988A (en) * | 2018-06-12 | 2018-11-16 | 中国科学院上海技术物理研究所 | A kind of adjustable non-refrigeration type terahertz detector of working frequency |
| CN112054069A (en) * | 2020-08-27 | 2020-12-08 | 东南大学 | Integrated photoelectric detector based on disc super-surface structure narrow-band light filtering |
| CN113465736A (en) * | 2021-06-30 | 2021-10-01 | 中国电子科技集团公司信息科学研究院 | On-chip integrated infrared detector |
| CN113465736B (en) * | 2021-06-30 | 2023-08-11 | 中国电子科技集团公司信息科学研究院 | On-chip integrated infrared detector |
| CN114199383A (en) * | 2021-11-24 | 2022-03-18 | 华中科技大学 | Thermopile narrow-band detector based on plasmon composite microcavity and preparation method thereof |
| CN114199383B (en) * | 2021-11-24 | 2023-11-14 | 华中科技大学 | Thermopile narrowband detector based on plasmon composite microcavity and preparation method thereof |
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