CN107478342B - A kind of lithium tantalate narrowband detector and preparation method thereof - Google Patents
A kind of lithium tantalate narrowband detector and preparation method thereof Download PDFInfo
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- CN107478342B CN107478342B CN201710579047.1A CN201710579047A CN107478342B CN 107478342 B CN107478342 B CN 107478342B CN 201710579047 A CN201710579047 A CN 201710579047A CN 107478342 B CN107478342 B CN 107478342B
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- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 238000002360 preparation method Methods 0.000 title abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 65
- 239000010703 silicon Substances 0.000 claims abstract description 65
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 71
- 239000010931 gold Substances 0.000 claims description 71
- 229910052737 gold Inorganic materials 0.000 claims description 71
- 239000011265 semifinished product Substances 0.000 claims description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 40
- 229920002120 photoresistant polymer Polymers 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 31
- 238000010521 absorption reaction Methods 0.000 claims description 21
- 239000000377 silicon dioxide Substances 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 16
- 238000005566 electron beam evaporation Methods 0.000 claims description 13
- 238000010894 electron beam technology Methods 0.000 claims description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 239000003292 glue Substances 0.000 claims description 11
- 238000004528 spin coating Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000007687 exposure technique Methods 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 7
- 238000011161 development Methods 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 3
- 239000000047 product Substances 0.000 claims 3
- 238000001514 detection method Methods 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 25
- 238000001228 spectrum Methods 0.000 description 18
- 238000010276 construction Methods 0.000 description 14
- 230000001413 cellular effect Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 11
- 239000004926 polymethyl methacrylate Substances 0.000 description 11
- 238000004088 simulation Methods 0.000 description 10
- 239000006096 absorbing agent Substances 0.000 description 8
- 230000005616 pyroelectricity Effects 0.000 description 6
- 241000790917 Dioxys <bee> Species 0.000 description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 5
- 229910003978 SiClx Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 229910052744 lithium Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 240000008042 Zea mays Species 0.000 description 2
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 description 2
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 235000005822 corn Nutrition 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012822 chemical development Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/208—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices superconductive
Abstract
The invention discloses a kind of lithium tantalate narrowband detectors and preparation method thereof, belong to pyroelectric infrared detector field.Detector includes detector body and the super surface texture of electromagnetism, the super surface texture of electromagnetism is arranged in detector body, wherein, detector body includes the silicon submount support being arranged from bottom to up, lower electrode, lithium tantalate wafer, top electrode, the super surface texture of electromagnetism includes that golden backboard, dielectric layer and antenna are arranged from bottom to top, wherein, golden backboard is shared with extremely same object, the two is powered on.The present invention also provides the preparation methods of lithium tantalate narrowband detector, the present invention does not have the defect of wavelength selectivity to improve traditional pyroelectric detector using super sufacing, it can be realized the detection to specific wavelength in a wavelength range, and simplify the preparation flow of infrared detector.
Description
Technical field
The invention belongs to pyroelectric infrared detector fields, are related to a kind of lithium tantalate narrowband detection based on super surface texture
Device and preparation method.
Background technique
Thermal-infrared sensing and sensing are a kind of key technologies of extensive application.With the light of expensive low-temperature working
Electrical resistivity survey examining system is compared, and thermal infrared detector has a lower cost, simpler process flow, but only due to thermal detector
Can not have wavelength selectivity to thermal response, specific single wavelength can not be detected, sensitivity is poor compared to photodetector,
This limits use of the thermal infrared detector in wide range of areas to a certain extent.
In recent years, super surface has become a research hotspot as a kind of completely new electromagnetic material.The electromagnetism on super surface
Characteristic is substantially unrelated with the property of its component material, and related with its internal micro-structure.When incident light and this layer of micro-structure phase
When interaction, surface phasmon can be generated, the focusing and enhancing of light field under nano-scale may be implemented.By this property,
Many is produced out based on the micronano optical equipment on super surface, such as perfect wave-absorber, perfect lens, complex refractivity index material
Deng.By adjusting the microstructure characteristic parameter on super surface, can be realized keeps Effect on Detecting best.
Currently, thermal-infrared sensing and sensing technology and super sufacing are combined together not yet, to improve existing skill
The defect of art.
Summary of the invention
For prior art defect and Improvement requirement, this application provides a kind of lithium tantalate heat based on super surface texture to release
Electric narrowband detector and preparation method thereof, it is therefore intended that, there is no wavelength to traditional pyroelectric detector using super sufacing
The defect of selectivity improves, and can be realized the detection to specific wavelength in a wavelength range, and simplify infrared
The preparation flow of detector.
To achieve the above object, according to one aspect of the present invention, a kind of lithium tantalate narrowband detector is provided comprising
Detector body and the super surface texture of electromagnetism, the super surface texture of electromagnetism are arranged in detector body, wherein detector body packet
Include the silicon submount support being arranged from bottom to up, lower electrode, lithium tantalate wafer, top electrode, the super surface texture of electromagnetism include from lower and
The golden backboard of upper setting, dielectric layer and antenna, wherein golden backboard is shared with extremely same object, the two is powered on.
In one embodiment of the invention, the antenna includes cross gold antenna or disk gold antenna.
In one embodiment of the invention, the dielectric layer includes dielectric layer silicon or dielectric layer silica.
In one embodiment of the invention, the super surface texture of electromagnetism include two kinds, one is golden backboard+dielectric layer silicon+
Cross gold antenna, another kind are golden backboard+dielectric layer silica+disk gold antennas.
In one embodiment of the invention, silicon submount support includes four a quarter silicon columns and silicon submount, passes through four
Lower electrode, the lithium tantalate wafer that electromagnetism surpasses surface texture and detector body are fixed on silicon base by a a quarter silicon column
On.A quarter silicon column refers to that cross section is the column of quadrant.
In one embodiment of the invention, the super surface texture dielectric layer silicon of the electromagnetism or dielectric layer silica
With a thickness of 50nm~500nm.
In one embodiment of the invention, cross gold antenna or disk gold antenna in the super surface texture of the electromagnetism
With a thickness of 40nm~70nm.
In one embodiment of the invention, the lithium tantalate wafer with a thickness of 70 μm~80 μm, preferably 75 μm.
The second aspect according to the invention provides a kind of method for preparing lithium tantalate narrowband as described above detector,
Its feature exists comprising following steps:
S1: lithium tantalate wafer substrate is chosen, using electron beam evaporation process or magnetron sputtering technique in lithium tantalate wafer
Upper and lower respectively grows one layer of gold, obtains the first semi-finished product；
S2: one layer is grown using magnetron sputtering technique or chemical vapor deposition process in above-mentioned first semi-finished product upper surface
Silicon or silica obtain the second semi-finished product；
S3: in the second semi-finished product upper surface spin coating photoresist, third semi-finished product are obtained；
S4: by electron beam exposure technique, using designed cross gold antenna domain or disk aerial domain to
The photoetching glue surfaces of three semi-finished product exposes, and forms the photoresist layer with cross or disk pattern, thus by pattern transfer to the
On the photoresist of three semi-finished product；
S5: development treatment is executed to third semi-finished product after exposure, leaves the photoresist of the cross or disc structure that have
Layer obtains the 4th semi-finished product；
S6: on the 4th semi-finished product, one layer of setting thickness is grown by electron beam evaporation process or magnetron sputtering technique
Gold, obtain golden antenna；
S7: carrying out lift-off processing to the sample after growing golden antenna using acetone, to remove extra photoresist, obtains the
Five semi-finished product；
S8: the 5th semi-finished product are fixed on silicon submount with four a quarter silicon columns, and are packaged, tantalum is so far obtained
Sour lithium narrowband detector.
In one embodiment of the invention, the super surface texture size adjustable of the electromagnetism, by adjusting cross gold antenna
Stick is long or the radius of disk aerial can realize the high-selenium corn of different-waveband.For example, a length of 500nm of cross gold aerial rod, stick
Width is 100nm, and the cellular construction period is 700nm, and dielectric layer silicon thickness is 100nm, and cross gold antenna thickness is 50nm, absorbs wave
A length of 4.18 μm；Change a length of 600nm of cross gold aerial rod, absorbing wavelength is 5.03 μm；Disc radius is 600nm, titanium dioxide
Silicon with a thickness of 100nm, golden disc thickness is 50nm, and the cellular construction period is 2 μm, and absorbing wavelength is 3.94 μm, when disk half
When diameter is changed to 700nm, absorbing wavelength is 4.49 μm.Change the thickness in period and dielectric layer, absorbing peak amplitude can corresponding change.
A kind of lithium tantalate narrowband detector preparation method packet based on cross and the super surface texture of disk disclosed by the invention
It includes following steps: choosing lithium tantalate wafer, respectively prepared by electron beam evaporation equipment or magnetron sputtering apparatus in upper and lower surface
The gold of one layer of setting thickness；By magnetron sputtering apparatus or chemical vapor depsotition equipment prepare one layer of setting thickness silicon or
Silica；Spin coating PMMA exposes glue；Design criss-cross construction or disc structure array, the size ginseng of accurate control structure
Designed structure is transferred to PMMA by electron beam exposure apparatus and exposes glue by number；Development, fixing；It is set by electron beam steaming
Standby or magnetron sputtering apparatus grows the gold of one layer of setting thickness；It removes photoresist processing；By four a quarters of the detector of preparation
Silicon column is fixed on silicon submount, and is packaged.At this point, on the pyroelectricity material lithium tantalate wafer for being formed with upper/lower electrode
An infrared absorber is grown, this infrared absorber is also possible to either golden backboard+dielectric layer silicon+cross gold antenna
Golden backboard+dielectric layer silica+disk gold antenna.
The present invention, to the resonance effect of matching wavelength light, realizes the high-selenium corn to special wavelength light using infrared absorber,
The electromagnetic energy of absorption is converted to Joule heat and passes to pyroelectric lithium tantalite chip, then reads electric signal by upper/lower electrode,
Realize the detection to setting wavelength light.
The present invention absorbs the infrared light of different wave length by adjusting the geometric parameter of infrared absorber, realizes to different waves
The detection of long infrared light.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, can obtain down and show
Beneficial effect:
Traditional selective thermal detector based on discrete optical filter, thermal detector have sound to broadband photo-thermal
It answers, itself does not have selectivity to wavelength, needs to assemble the selectivity that upper filter is just able to achieve wavelength in front of the detector,
Which increase the volumes of detector, while keeping detector more complicated.
Lithium tantalate narrowband detector proposed by the present invention based on super surface can be realized to some within the scope of broadband
The hot-probing of narrowband wavelength light, this is because the detector in the application is the infrared absorber collection that will have wavelength selectivity
It is made on pyroelectricity material.The infrared absorber is functionally equivalent to optical filter, convenient for being integrated in hot material
On, while having near field humidification to light, absorption efficiency is high, and corresponding detector sensitivity is high, and small in size, the processing is simple,
The relevant parameter for changing simultaneously infrared absorber can be realized the heat detection to different wave length, functionally with a kind of hot-probing
Device combines upper filter instead of traditional thermal detector, simplifies infrared thermal detector process flow, lowers device cost,
Integrated level is got higher.
Preparation method of the invention is ingenious in design, simple process, strong operability, the detector response of preparation rapidly, with
Upper advantage is conducive to the promotion and popularization of the technology.
Detailed description of the invention
Fig. 1 is the lithium tantalate narrowband detector overall structure figure in the embodiment of the present invention based on super surface cross antenna；
Fig. 2 is the lithium tantalate narrowband detector overall structure figure in the embodiment of the present invention based on super surface disc antenna；
Fig. 3 is electron beam exposure technique domain cross antenna schematic diagram in the embodiment of the present invention；
Fig. 4 is electron beam exposure technique domain disk aerial schematic diagram in the embodiment of the present invention；
Fig. 5 is the infrared absorpting light spectra of embodiment 1 in the present invention；
Fig. 6 is the infrared absorpting light spectra of embodiment 2 in the present invention；
Fig. 7 is the infrared absorpting light spectra of embodiment 3 in the present invention；
Fig. 8 is the infrared absorpting light spectra of embodiment 4 in the present invention；
Fig. 9 is the infrared absorpting light spectra of embodiment 5 in the present invention；
Figure 10 is the infrared absorpting light spectra of embodiment 6 in the present invention；
Figure 11 is the infrared absorpting light spectra of embodiment 7 in the present invention；
Figure 12 is the infrared absorpting light spectra of embodiment 8 in the present invention；
Figure 13 is the infrared absorpting light spectra of embodiment 9 in the present invention；
Figure 14 is the infrared absorpting light spectra of embodiment 10 in the present invention；
Figure 15 be in the embodiment of the present invention lithium tantalate pyroelectricity material 0.98mW power single wavelength light source irradiation under
Temperature profile.
In all the appended drawings, identical appended drawing reference is used to denote the same element or structure, in which:
The support of 1 silicon submount, 2 lower electrodes, 3 lithium tantalate wafers, 4 top electrodes, 5 medium silicon, 6 medium silica, 7 crosses gold
Antenna, 8 disk gold antennas.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
The content for a better understanding of the present invention, it is necessary to which the principle of the present invention is illustrated.In the present invention
In middle lithium tantalate narrowband panel detector structure, cross gold aerial array or disk aerial array are interacted with incident light, and are generated
Surface phasmon focuses and enhances to light field under nano-scale, specific wavelength infrared light is made to generate resonance, this resonance
Oscillatory excitation metal structure makes free-carrier Absorption electromagnetic energy cause the decaying of light, and the electromagnetic energy of decaying is finally converted
At Joule heat, then the Joule heat of generation is passed to lithium tantalate pyroelectricity material by golden backboard.When lithium tantalate is modulated
Infra-red radiation when, radiant heat flux by lithium tantalate absorption so that its internal temperature is changed, the variation of temperature makes lithium tantalate
The Dipole moment of crystal changes, i.e. Ta5+ and Li+ change relative to the offset of center, to keep surface electricity
Neutrality, lithium tantalate surface can discharge the charge of absorption, positive and negative charge be discharged in upper and lower surface respectively, then by upper/lower electrode
It is transmitted to filter amplification circuit, reads electric signal, realizes the detection to setting wavelength.When the geometric dimension for changing super surface, inhale
Receiving wavelength can change, then the narrowband wavelength detection of wide spectrum may be implemented.
Embodiment 1:
A kind of lithium tantalate narrowband detector based on super surface, each of which structural unit include silicon submount from top to bottom and
1, lower gold electrode 2, lithium tantalate wafer 3, top electrode 4, medium silicon 5, cross gold antenna 7 are supported, as shown in Figure 1.Wherein, cross gold
The a length of 350nm of the stick of antenna, stick width are 100nm, and cross gold antenna thickness is 50nm；The cellular construction period is 600nm；Centre is situated between
Matter layer silicon with a thickness of 50nm；Golden backboard with a thickness of 100nm.By numerical simulation, the structure is obtained in the suction of infrared band
Spectrum is received, as shown in Figure 5, the absorption peak wavelength of the structure is located at 3.24 microns.
Embodiment 2:
A kind of lithium tantalate narrowband detector based on super surface, each of which structural unit include silicon submount from top to bottom and
1, lower gold electrode 2, lithium tantalate wafer 3, top electrode 4, medium silicon 5, cross gold antenna 7 are supported, as shown in Figure 1.Wherein, cross gold
The a length of 500nm of the stick of antenna, stick width are 100nm, and cross gold antenna thickness is 50nm；The cellular construction period is 700nm；Centre is situated between
Matter layer silicon with a thickness of 100nm；Golden backboard with a thickness of 100nm.By numerical simulation, the structure is obtained in the suction of infrared band
Spectrum is received, it will be appreciated from fig. 6 that the absorption peak wavelength of the structure is located at 4.18 microns.
Embodiment 3:
A kind of lithium tantalate narrowband detector based on super surface, each of which structural unit include silicon submount from top to bottom and
1, lower gold electrode 2, lithium tantalate wafer 3, top electrode 4, medium silicon 5, cross gold antenna 7 are supported, as shown in Figure 1.Wherein, cross gold
The a length of 750nm of the stick of antenna, stick width are 100nm, and cross gold antenna thickness is 50nm；The cellular construction period is 1200nm；It is intermediate
Dielectric layer silicon with a thickness of 200nm；Golden backboard with a thickness of 100nm.By numerical simulation, the structure is obtained in infrared band
Absorption spectra, as shown in Figure 7, the absorption peak wavelength of the structure are located at 5.8 microns.
Embodiment 4:
A kind of lithium tantalate narrowband detector based on super surface, each of which structural unit include silicon submount from top to bottom and
1, lower gold electrode 2, lithium tantalate wafer 3, top electrode 4, medium silicon 5, cross gold antenna 7 are supported, as shown in Figure 1.Wherein cross gold
The a length of 950nm of the stick of antenna, stick width are 100nm, and cross gold antenna thickness is 50nm；The cellular construction period is 1100nm；It is intermediate
Dielectric layer silicon with a thickness of 200nm；Golden backboard with a thickness of 100nm.By numerical simulation, the structure is obtained in infrared band
Absorption spectra, as shown in Figure 8, the absorption peak wavelength of the structure are located at 7.45 microns.
Embodiment 5:
A kind of lithium tantalate narrowband detector based on super surface, each of which structural unit include silicon submount from top to bottom and
1, lower gold electrode 2, lithium tantalate wafer 3, top electrode 4, medium silicon 5, cross gold antenna 7 are supported, as shown in Figure 1.Wherein cross gold
The a length of 1500nm of the stick of antenna, stick width are 100nm, and cross gold antenna thickness is 50nm；The cellular construction period is 1900nm；It is intermediate
Dielectric layer silicon with a thickness of 500nm；Golden backboard with a thickness of 100nm.By numerical simulation, the structure is obtained in infrared band
Absorption spectra, as shown in Figure 9, the absorption peak wavelength of the structure are located at 11.08 microns.
Embodiment 6:
A kind of lithium tantalate narrowband detector based on super surface, each of which structural unit include silicon submount from top to bottom and
1, lower gold electrode 2, lithium tantalate wafer 3, top electrode 4, medium silica 6, disk gold antenna 8 are supported, as shown in Figure 2.Wherein
The diameter of disk aerial is 726nm, and disk aerial is with a thickness of 50nm；The cellular construction period is 2000nm；Middle dielectric layer dioxy
SiClx with a thickness of 80nm；Golden backboard with a thickness of 100nm.By numerical simulation, the structure is obtained in the absorption of infrared band
Spectrum, as shown in Figure 10, the absorption peak wavelength of the structure are located at 2.64 microns.
Embodiment 7:
A kind of lithium tantalate narrowband detector based on super surface, each of which structural unit include silicon submount from top to bottom and
1, lower gold electrode 2, lithium tantalate wafer 3, top electrode 4, medium silica 6, disk gold antenna 8 are supported, as shown in Figure 2.Wherein,
The diameter of disk aerial is 940nm, and disk aerial is with a thickness of 50nm；The cellular construction period is 2000nm；Middle dielectric layer dioxy
SiClx with a thickness of 80nm；Golden backboard with a thickness of 100nm.By numerical simulation, the structure is obtained in the absorption of infrared band
Spectrum, as shown in Figure 11, the absorption peak wavelength of the structure are located at 3.33 microns.
Embodiment 8:
A kind of lithium tantalate narrowband detector based on super surface, each of which structural unit include silicon submount from top to bottom and
1, lower gold electrode 2, lithium tantalate wafer 3, top electrode 4, medium silica 6, disk gold antenna 8 are supported, as shown in Figure 2.Wherein,
The diameter of disk aerial is 1290nm, and disk aerial is with a thickness of 50nm；The cellular construction period is 2000nm；Middle dielectric layer dioxy
SiClx with a thickness of 80nm；Golden backboard with a thickness of 100nm.By numerical simulation, the structure is obtained in the absorption of infrared band
Spectrum, as shown in Figure 12, the absorption peak wavelength of the structure are located at 4.26 microns.
Embodiment 9:
A kind of lithium tantalate narrowband detector based on super surface, each of which structural unit include silicon submount from top to bottom and
1, lower gold electrode 2, lithium tantalate wafer 3, top electrode 4, medium silica 6, disk gold antenna 8 are supported, as shown in Figure 2.Wherein,
The diameter of disk aerial is 2060nm, and disk aerial is with a thickness of 50nm；The cellular construction period is 3000nm；Middle dielectric layer dioxy
SiClx with a thickness of 100nm；Golden backboard with a thickness of 100nm.By numerical simulation, the structure is obtained in the absorption of infrared band
Spectrum, as shown in Figure 13, the absorption peak wavelength of the structure are located at 5.73 microns.
Embodiment 10:
A kind of lithium tantalate narrowband detector based on super surface, each of which structural unit include silicon submount from top to bottom and
1, lower gold electrode 2, lithium tantalate wafer 3, top electrode 4, medium silica 6, disk gold antenna 8 are supported, as shown in Figure 2.Wherein,
The diameter of disk aerial is 3400nm, and disk aerial is with a thickness of 50nm；The cellular construction period is 4000nm；Middle dielectric layer dioxy
SiClx with a thickness of 110nm；Golden backboard with a thickness of 100nm.By numerical simulation, the structure is obtained in the absorption of infrared band
Spectrum, as shown in Figure 14, the absorption peak wavelength of the structure are located at 7.46 microns.
The size of one array is generally 1mm or so, and the size of the most basic geometric units of a forming array is 2um
Left and right, so an array is to carry out a most basic geometric units to repeat several hundred times in the in-plane direction, cellular construction
The size of the most basic geometric units of period i.e. forming array.
Surpassed in the present invention based on electromagnetism the lithium tantalate narrowband detector on surface the production method is as follows:
Firstly, choosing lithium tantalate wafer substrate.Specifically, the first step was with acetone soln supersonic cleaning 3 minutes；Second step
With ethanol solution supersonic cleaning 3 minutes；It finally cleans ultrasonically in deionized water 2 minutes, surface clean is done
Only in order to subsequent vapor deposition.
Then, the gold of 100nm thickness is deposited in clean substrate upper and lower surface respectively for deposited by electron beam evaporation coating machine.Magnetic is used again
It controls sputtering equipment or chemical vapor depsotition equipment grows the silicon dielectric layer or silica dioxide medium layer of one layer of 100nm thickness.
Then, the super skin antenna array of electromagnetism of the cross or disk of some cycles structure is designed, and domain is made.
One layer of PMMA exposure glue of first uniform spin coating on substrate, spin-coating time 60 seconds, 2000 revs/min of spin coating machine speed, spin coating PMMA
The thickness of glue is about 400nm.
Fig. 3 is electron beam exposure technique domain cross antenna schematic diagram in the embodiment of the present invention；Fig. 4 is the embodiment of the present invention
Middle electron beam exposure technique domain disk aerial schematic diagram, wherein in Fig. 3 and in Fig. 4, a is exposed portion, and b is non-exposure
Light part.
Followed by being toasted 3.5 minutes at 170 DEG C.Electron beam exposure apparatus is reused to be transferred to the pattern of domain
On the substrate of spin-coated PMMA exposure glue, electric current 3nA is exposed.By chemical development mode, the PMMA glue exposed is shown
Then shadow, fixing carry out electron beam evaporation deposition using PMMA glue as exposure mask, the gold of 50nm thickness is deposited.
Then, PMMA glue is removed by chemical method, sample surface forms cross gold aerial array at this time.
Finally, the detector of preparation is fixed on silicon submount with four a quarter silicon columns, and it is packaged.
In order to surpass the lithium tantalate narrowband detector production method on surface during the present invention will be described in detail based on electromagnetism, below into one
Step combines embodiment to be in detail below described in detail.
Embodiment 11
The lithium tantalate narrowband detector production method for surpassing surface based on electromagnetism that the present embodiment proposes includes the following steps:
S1: 75um thickness lithium tantalate wafer substrate is chosen, using electron beam evaporation process in each life of lithium tantalate wafer upper and lower
Long one layer of gold, obtains the first semi-finished product, during actual process, needs that the first semi-finished product are adhered to round electron beam with conducting resinl
On the disk of evaporation equipment, electron-beam evaporation rate 6nm/min；
S2: layer of silicon dioxide, chemical gas are grown using chemical vapor deposition process in above-mentioned first semi-finished product upper surface
Mutually the rate of deposition silica is 50nm/min, obtains the second semi-finished product；
S3: in the second semi-finished product upper surface spin coating photoresist, photoresist is PMMA positive photoresist, model AR-P679.04, rotation
Painting rate be 2000rpm, after by electric hot plate heat 170 degree bakings, 3 points of halfs, acquisition third semi-finished product；
S4: by electron beam exposure technique, using designed disk aerial domain to the photoetching glue surface of third semi-finished product
Exposure forms the photoresist layer for having disk pattern, thus by the photoresist of pattern transfer to third semi-finished product；
S5: development treatment is executed to third semi-finished product after exposure, is successively impregnated in developer solution A, B, leaves the circle having
The photoresist layer of dish structure obtains the 4th semi-finished product；
S6: on the 4th semi-finished product, the gold of one layer of 50nm thickness is grown by electron beam evaporation process, obtains golden antenna；
S7: lift-off processing is carried out to the sample after growing golden antenna using acetone soln, can be carried out at certain heating
Reason obtains the 5th semi-finished product to remove extra photoresist；
S8: the 5th semi-finished product are fixed on silicon submount with four a quarter silicon columns, and are packaged, tantalum is so far obtained
Sour lithium narrowband detector.
Embodiment 12
The lithium tantalate narrowband detector production method for surpassing surface based on electromagnetism that the present embodiment proposes includes the following steps:
S1: 75um thickness lithium tantalate wafer substrate is chosen, is respectively grown using magnetron sputtering technique in lithium tantalate wafer upper and lower
One layer of gold, sputter rate 1nm/min obtain the first semi-finished product；
S2: magnetron sputtering technique silicon growth layer, the rate of magnetron sputtering silicon are used in above-mentioned first semi-finished product upper surface
For 7.5nm/min, the second semi-finished product are obtained；
S3: in the second semi-finished product upper surface spin coating photoresist, photoresist is PMMA positive photoresist, and model AR-P679.04 turns
Speed be 2000rmp, after by electric hot plate heat 170 degree bakings, 3 points of halfs, acquisition third semi-finished product；
S4: by electron beam exposure technique, using designed cross gold antenna domain to the photoresist of third semi-finished product
Face exposure, forms the photoresist layer for having cross pattern, thus by the photoresist of pattern transfer to third semi-finished product；
S5: development treatment is executed to third semi-finished product after exposure, is successively impregnated in developer solution A, B, leaves ten had
The photoresist layer of word structure obtains the 4th semi-finished product；
S6: on the 4th semi-finished product, the gold of one layer of 50nm thickness is grown by magnetron sputtering technique, obtains golden antenna；
S7: carrying out lift-off processing to the sample after growing golden antenna using acetone, can carry out certain heat treatment,
To remove extra photoresist, the 5th semi-finished product are obtained；
S8: the 5th semi-finished product are fixed on silicon submount with four a quarter silicon columns, and are packaged, tantalum is so far obtained
Sour lithium narrowband detector.
Embodiment 13
The lithium tantalate narrowband detector production method for surpassing surface based on electromagnetism that the present embodiment proposes includes the following steps:
S1: 75um thickness lithium tantalate wafer substrate is chosen, using electron beam evaporation process in each life of lithium tantalate wafer upper and lower
Long one layer of gold, electron-beam evaporation rate 6nm/min obtain the first semi-finished product；
S2: layer of silicon dioxide, deposition speed are grown using chemical vapor deposition process in above-mentioned first semi-finished product upper surface
Rate is 50nm/min, obtains the second semi-finished product；
S3: in the second semi-finished product upper surface spin coating photoresist, photoresist is PMMA positive photoresist, and model AR-P679.04 turns
Speed be 2000rmp, after by electric hot plate heat 170 degree bakings, 3 points of halfs, acquisition third semi-finished product；
S4: by electron beam exposure technique, using designed cross gold antenna domain to the photoresist of third semi-finished product
Face exposure, forms the photoresist layer for having cross pattern, thus by the photoresist of pattern transfer to third semi-finished product；
S5: development treatment is executed to third semi-finished product after exposure, is successively impregnated in developer solution A, B, leaves ten had
The photoresist layer of word structure obtains the 4th semi-finished product；
S6: on the 4th semi-finished product, the gold of one layer of 50nm thickness is grown by electron beam evaporation process, obtains golden antenna；
S7: carrying out lift-off processing to the sample after growing golden antenna using acetone, can carry out certain heat treatment, with
Extra photoresist is removed, the 5th semi-finished product are obtained；
S8: the 5th semi-finished product are fixed on silicon submount with four a quarter silicon columns, and are packaged, tantalum is so far obtained
Sour lithium narrowband detector.
Figure 15 be in the embodiment of the present invention lithium tantalate pyroelectricity material 0.98mW power single wavelength light source irradiation under
Temperature profile, wherein lithium tantalate pyroelectricity material side length is 1mm, and black curve data are taken among lithium tantalate upper surface
One transversal takes the position on this transversal and steady temperature distributed intelligence.As seen from the figure, in the material between position temperature
Highest is spent, temperature rise is 0.215 degree, is heated up more apparent.
The method of the present invention preparation detector use the super surface cross optical antenna array of electromagnetism and lithium tantalate material as
Primary structure, preparation process are simple, at low cost.Meanwhile the super surface cross optical antenna array structure of electromagnetism has narrow-band filtering
Characteristic, and Wavelength tunable are convenient for integra-tion application.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (11)
1. a kind of lithium tantalate narrowband detector, which is characterized in that it includes detector body and the super surface texture of electromagnetism, and electromagnetism is super
Surface texture is arranged in detector body, wherein
Detector body includes silicon submount support (1), lower electrode (2), lithium tantalate wafer (3), top electrode being arranged from bottom to up
(4),
The super surface texture of electromagnetism includes that golden backboard, dielectric layer and antenna are arranged from bottom to top,
Wherein, golden backboard is shared with extremely same object, the two is powered on.
2. a kind of lithium tantalate narrowband as described in claim 1 detector, which is characterized in that the antenna includes cross gold antenna
(7) or disk gold antenna (8).
3. a kind of lithium tantalate narrowband as described in claim 1 detector, which is characterized in that the dielectric layer includes dielectric layer silicon
(5) or dielectric layer silica (6).
4. a kind of lithium tantalate narrowband as described in claim 1 detector, which is characterized in that the super surface texture of electromagnetism includes two
Kind, one is golden backboard+dielectric layer silicon+cross gold antenna, another kind is golden backboard+dielectric layer silica+disk gold antenna.
5. a kind of lithium tantalate narrowband as described in claim 1 detector, which is characterized in that silicon submount support includes four four points
One of silicon column and silicon submount, electromagnetism is surpassed to the lower electrode of surface texture and detector body by four a quarter silicon columns
(2), lithium tantalate wafer (3) is fixed on a silicon substrate,
A quarter silicon column refers to that cross section is the column of quadrant.
6. a kind of lithium tantalate narrowband detector according to claim 3, which is characterized in that in the super surface texture of electromagnetism
Dielectric layer silicon (5) or dielectric layer silica (6) with a thickness of 50nm~500nm.
7. a kind of lithium tantalate narrowband detector according to claim 2, which is characterized in that in the super surface texture of electromagnetism
Cross gold antenna (7) or disk gold antenna (8) with a thickness of 40nm~70nm.
8. a kind of lithium tantalate narrowband detector according to claim 1, which is characterized in that the lithium tantalate wafer (3)
With a thickness of 70 μm~80 μm.
9. a kind of lithium tantalate narrowband detector according to claim 1, which is characterized in that the lithium tantalate wafer (3)
With a thickness of 75 μm.
10. a kind of method for preparing the lithium tantalate narrowband detector as described in one of claim 1-9, feature exist comprising such as
Lower step:
S1: lithium tantalate wafer substrate is chosen, using electron beam evaporation process or magnetron sputtering technique above and below lithium tantalate wafer
Side respectively grows one layer of gold, obtains the first semi-finished product；
S2: above-mentioned first semi-finished product upper surface using magnetron sputtering technique or chemical vapor deposition process silicon growth layer or
Person's silica obtains the second semi-finished product；
S3: in the second semi-finished product upper surface spin coating photoresist, third semi-finished product are obtained；
S4: by electron beam exposure technique, using designed cross gold antenna domain or disk aerial domain to third half
The photoetching glue surface of finished product exposes, and forms the photoresist layer with cross or disk pattern, thus by pattern transfer to third half
On the photoresist of finished product；
S5: development treatment is executed to third semi-finished product after exposure, the photoresist layer of the cross or disc structure that have is left, obtains
Obtain the 4th semi-finished product；
S6: on the 4th semi-finished product, the gold of one layer of setting thickness is grown by electron beam evaporation process or magnetron sputtering technique,
Obtain golden antenna；
S7: lift-off processing is carried out to the sample after growing golden antenna using acetone, to remove extra photoresist, obtains the 5th half
Finished product；
S8: the 5th semi-finished product are fixed on silicon submount with four a quarter silicon columns, and are packaged, lithium tantalate is so far obtained
Narrowband detector.
11. method as claimed in claim 10, which is characterized in that by adjusting the stick length or disk aerial of cross gold antenna
Radius can realize absorption of the detector to different-waveband wavelength.
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| CN108831988A (en) * | 2018-06-12 | 2018-11-16 | 中国科学院上海技术物理研究所 | A kind of adjustable non-refrigeration type terahertz detector of working frequency |
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| CN106197668A (en) * | 2016-07-22 | 2016-12-07 | 华中科技大学 | A kind of arrowband infrared detecting chip and preparation method thereof |
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