CN100380381C - 光掩模以及用样板规范使其合格的方法 - Google Patents
光掩模以及用样板规范使其合格的方法 Download PDFInfo
- Publication number
- CN100380381C CN100380381C CNB028278135A CN02827813A CN100380381C CN 100380381 C CN100380381 C CN 100380381C CN B028278135 A CNB028278135 A CN B028278135A CN 02827813 A CN02827813 A CN 02827813A CN 100380381 C CN100380381 C CN 100380381C
- Authority
- CN
- China
- Prior art keywords
- photomask
- medel
- code
- die site
- patterned layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US33937001P | 2001-12-10 | 2001-12-10 | |
US60/339,370 | 2001-12-10 | ||
US10/314,844 | 2002-12-09 | ||
US10/314,844 US6910203B2 (en) | 2001-12-10 | 2002-12-09 | Photomask and method for qualifying the same with a prototype specification |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1618069A CN1618069A (zh) | 2005-05-18 |
CN100380381C true CN100380381C (zh) | 2008-04-09 |
Family
ID=26979588
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028278135A Expired - Fee Related CN100380381C (zh) | 2001-12-10 | 2002-12-10 | 光掩模以及用样板规范使其合格的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6910203B2 (zh) |
JP (1) | JP2005517203A (zh) |
CN (1) | CN100380381C (zh) |
AU (1) | AU2002364726A1 (zh) |
WO (1) | WO2003050615A2 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004053807A (ja) * | 2002-07-18 | 2004-02-19 | Renesas Technology Corp | マスクメーカ選定方法 |
US20100124709A1 (en) * | 2008-11-20 | 2010-05-20 | Daniel Warren Hawtof | Image mask assembly for photolithography |
US8948495B2 (en) * | 2012-08-01 | 2015-02-03 | Kla-Tencor Corp. | Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4131472A (en) * | 1976-09-15 | 1978-12-26 | Align-Rite Corporation | Method for increasing the yield of batch processed microcircuit semiconductor devices |
US5065208A (en) * | 1987-01-30 | 1991-11-12 | Texas Instruments Incorporated | Integrated bipolar and CMOS transistor with titanium nitride interconnections |
US5663891A (en) * | 1996-04-03 | 1997-09-02 | Cadence Design Systems, Inc. | Optimization of multiple performance criteria of integrated circuits by expanding a constraint graph with subgraphs derived from multiple PWL convex cost functions |
US5827625A (en) * | 1997-08-18 | 1998-10-27 | Motorola, Inc. | Methods of designing a reticle and forming a semiconductor device therewith |
US6064484A (en) * | 1996-03-13 | 2000-05-16 | Fujitsu Limited | Pattern inspection method and system |
US6175953B1 (en) * | 1998-03-03 | 2001-01-16 | Lsi Logic Corporation | Method and apparatus for general systematic application of proximity correction |
CN2432610Y (zh) * | 2000-06-21 | 2001-05-30 | 中国科学院光电技术研究所 | 一种用于x射线光刻的相移掩模 |
CN1311525A (zh) * | 2000-03-01 | 2001-09-05 | 日本电气株式会社 | 曝光掩模及其制造方法 |
-
2002
- 2002-12-09 US US10/314,844 patent/US6910203B2/en not_active Expired - Fee Related
- 2002-12-10 JP JP2003551610A patent/JP2005517203A/ja active Pending
- 2002-12-10 AU AU2002364726A patent/AU2002364726A1/en not_active Abandoned
- 2002-12-10 CN CNB028278135A patent/CN100380381C/zh not_active Expired - Fee Related
- 2002-12-10 WO PCT/US2002/039593 patent/WO2003050615A2/en active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4131472A (en) * | 1976-09-15 | 1978-12-26 | Align-Rite Corporation | Method for increasing the yield of batch processed microcircuit semiconductor devices |
US5065208A (en) * | 1987-01-30 | 1991-11-12 | Texas Instruments Incorporated | Integrated bipolar and CMOS transistor with titanium nitride interconnections |
US6064484A (en) * | 1996-03-13 | 2000-05-16 | Fujitsu Limited | Pattern inspection method and system |
US5663891A (en) * | 1996-04-03 | 1997-09-02 | Cadence Design Systems, Inc. | Optimization of multiple performance criteria of integrated circuits by expanding a constraint graph with subgraphs derived from multiple PWL convex cost functions |
US5827625A (en) * | 1997-08-18 | 1998-10-27 | Motorola, Inc. | Methods of designing a reticle and forming a semiconductor device therewith |
US6175953B1 (en) * | 1998-03-03 | 2001-01-16 | Lsi Logic Corporation | Method and apparatus for general systematic application of proximity correction |
CN1311525A (zh) * | 2000-03-01 | 2001-09-05 | 日本电气株式会社 | 曝光掩模及其制造方法 |
CN2432610Y (zh) * | 2000-06-21 | 2001-05-30 | 中国科学院光电技术研究所 | 一种用于x射线光刻的相移掩模 |
Also Published As
Publication number | Publication date |
---|---|
AU2002364726A1 (en) | 2003-06-23 |
US6910203B2 (en) | 2005-06-21 |
US20030198873A1 (en) | 2003-10-23 |
CN1618069A (zh) | 2005-05-18 |
WO2003050615A3 (en) | 2004-02-12 |
AU2002364726A8 (en) | 2003-06-23 |
WO2003050615A2 (en) | 2003-06-19 |
JP2005517203A (ja) | 2005-06-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI TOPPAN PHOTOMASK CO., LTD. Free format text: FORMER OWNER: DUPONT PHOTOMASKS INC. Effective date: 20100721 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: TEXAS STATE,THE USA TO: 200233 NO.800, YISHAN ROAD, SHANGHAI CITY |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100721 Address after: 200233 Yishan Road, Shanghai, No. 800 Patentee after: Shanghai Toppan Photomasks Co., Ltd. Address before: American Texas Patentee before: Dupont Photomasks Inc. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080409 Termination date: 20201210 |
|
CF01 | Termination of patent right due to non-payment of annual fee |