CN100377371C - Light-emitting diode - Google Patents
Light-emitting diode Download PDFInfo
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- CN100377371C CN100377371C CNB2003101125171A CN200310112517A CN100377371C CN 100377371 C CN100377371 C CN 100377371C CN B2003101125171 A CNB2003101125171 A CN B2003101125171A CN 200310112517 A CN200310112517 A CN 200310112517A CN 100377371 C CN100377371 C CN 100377371C
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- Prior art keywords
- light
- emitting diode
- diffraction grating
- emitting
- encapsulating structure
- Prior art date
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- 239000000463 material Substances 0.000 claims abstract description 15
- 238000004020 luminiscence type Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 abstract 4
- 239000006185 dispersion Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000002033 PVDF binder Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The present invention relates to a light emitting diode which comprises a baseplate, a light emitting chip and a packaging structure, wherein the light emitting chip is positioned on the baseplate; the packaging structure coats the light emitting chip and forms a light emergent surface, and a diffraction grating is arranged on the light emergent surface. The packaging structure is made of a transparent piezoelectric material, and the mechanical deformation of the packaging structure is controlled by an external circuit.
Description
[technical field]
The invention relates to a kind of light-emitting diode.
[background technology]
Light-emitting diode (Light Emitting Diode, LED) has the advantage of power saving, brightness height and long service life, therefore its product is widely used in the brake light of module backlight, outdoor large image display board, automobile of mobile phone and room light etc., and its application spreads all over fields such as information, communication, illumination and consumer electronics industry.Light-emitting diode structure can be consulted Fig. 1, and this light-emitting diode 1 comprises a substrate 16 and a luminescence chip 13, and this luminescence chip 13 is fixed on this substrate 16 and packed structure 15 coats.This encapsulating structure 15 adopts transparent epoxy resin as encapsulating material.Epoxy resin has characteristics such as good gluing, electrical insulating property, thermal endurance and chemical stability, shrinkage and mechanical strength are good.Owing to adopt the encapsulating material of transparent epoxy resin as light-emitting diode 1, can cause the dispersion angle of light-emitting diode unadjustable, therefore, this light-emitting diode 1 has the uncontrollable defective of dispersion angle.
Seeing also Fig. 2, is the light intensity polar coordinates distribution map of light-emitting diode 1.The light intensity maximum of this light-emitting diode 1 emergent light mid portion, the light intensity from the centre to both sides weakens gradually, so the emergent light energy of this point-source of light 1 is a circular cone distribution.Please consulting Fig. 3 together, is to adopt the light path schematic diagram of many light-emitting diodes 1 as the module backlight 60 of light source.When the emergent light 3 of this light-emitting diode 1 is incident to light guide plate 2, the transmission of this light guide plate 2 of process is from exiting surface (figure does not show) outgoing of this light guide plate 2, the blanking bar district 23 that the part of the close light-emitting diode non-direct projection in 1 place exists this emergent light 3 to arrive in this light guide plate 2, cause also having the blanking bar district, thereby influence the outgoing light homogeneity of module 2 backlight with blanking bar district 23 corresponding light guide plate exiting surfaces.
[summary of the invention]
In order to overcome the unadjustable and unbalanced problem of its Energy distribution of the dispersion angle of light-emitting diode in the prior art, the invention provides a kind of dispersion angle scalable and along the balanced light-emitting diode of all directions dissipate energy.
The scheme that technical solution problem of the present invention is adopted is: a kind of light-emitting diode is provided, it comprises a substrate, a luminescence chip and an encapsulating structure, this luminescence chip is positioned on this substrate, this encapsulating structure coats this luminescence chip and forms a light-emitting face, a diffraction grating is arranged on this light-emitting face, and this encapsulating structure is to be made and controlled its mechanical deformation by an external circuit by the transparent piezoelectric material.
Compared to prior art, owing to have diffraction grating on the light-emitting face of package structure for LED of the present invention, this structure can increase the dispersion angle of light-emitting diode, can reduce prior art and adopt the influence of light-emitting diode as blanking bar that module backlight produces, the material of this encapsulating structure is the transparent piezoelectric material simultaneously, this transparent piezoelectric material is controlled its mechanical deformation by an external circuit, thereby therefore can change the dispersion angle of the deformation degree change light-emitting diode of this transparent piezoelectric material by the voltage swing of controlling this external circuit.
[description of drawings]
Fig. 1 is the cutaway view of prior art light-emitting diode.
Fig. 2 is prior art light-emitting diode light intensity polar coordinates distribution maps.
Fig. 3 adopts the incident ray distribution schematic diagram of prior art light-emitting diode as module backlight.
Fig. 4 is the cutaway view of light-emitting diode of the present invention.
Fig. 5 is diffraction grating part enlarged drawing and its diffraction effect schematic diagram to emergent light shown in Figure 4.
[embodiment]
Fig. 4 is the generalized section of light-emitting diode 110 of the present invention.This light-emitting diode 110 comprises a substrate 111, a luminescence chip 113 and an encapsulating structure 115.This encapsulating structure 115 is used to coat this luminescence chip 113 and forms a light-emitting face (not indicating), this light-emitting face is a curved-surface structure, effect with lens, the emergent light of luminescence chip 113 is through this light-emitting face outgoing, and the diffraction grating 117 with a plurality of diffraction gratings unit is arranged on this light-emitting face continuously.This diffraction grating 117 is to be arranged on this light-emitting face, and its distributed areas are positioned at encapsulating structure 115 scopes that these luminescence chip 113 emergent lights are shone.This encapsulating structure 115 adopts transparent piezoelectric to make, this transparent piezoelectric material can be transparent piezoelectric pottery or Kynoar (Polyvinylidene Fluoride, PVDF), this encapsulating structure 115 be connected with an external control circuit (figure do not show).Because being added on piezoelectric generation electric field, this piezoelectric machinery itself and electrical couplings (Coupling) effect, external voltage will make piezoelectric produce mechanical deformation.When this transparent piezoelectric material was subjected to the added electric field action of external control circuit, its electric dipole moment can be elongated, and this transparent piezoelectric material can extend along direction of an electric field.This diffraction grating 117 will change grating space along with applied voltage value size, and applied voltage is big more, and grating space also can be big more, and its luminous intensity also can be high more, but the light-emitting diode dispersion angle is more little.Therefore regulating applied voltage value size will make light-emitting diode reach the light intensity and the dispersion angle of actual needs.
Fig. 5 is diffraction grating 117 part enlarged drawings and its diffraction effect schematic diagram to luminescence chip 113 emergent lights shown in Figure 4.A plurality of diffraction gratings unit of this diffraction grating 117 is arranged on the respective regions of this light-emitting face continuously.This diffraction grating 117 is transmission-type diffraction gratings.But this diffraction grating 117 also can adopt an optical thin film with a plurality of diffraction gratings unit to be attached at the respective regions of this light-emitting face.The grating space a of this diffraction grating is 10 μ m～30 μ m, grating slit opening b is 1 μ m～10 μ m, when the emergent light of luminescence chip 113 passes through this diffraction grating unit, because Light Diffraction Effect, its light distribution has following characteristics: except the 0th rank light intensity at center, light intensity both sides, the 0th rank in the center also have ± 1 rank, ± 2 rank (figure does not show), ± 3 rank (figure does not show) ... the light distribution on ± n rank (figure does not show), the i.e. light distribution of this emergent ray zone along laterally towards about expansion, correspondingly the lighting angle of this light-emitting diode 110 is expanded.
Compared to prior art, because the light-emitting face of light-emitting diode 110 of the present invention has a diffraction grating 117, the Light Diffraction Effect that the light beam that the luminescence chip 113 of light-emitting diode 110 sends produces when these diffraction grating 117 outgoing makes its lighting angle increase, and the grating space of regulating this diffraction grating 117 according to the voltage swing of circuit control transparent piezoelectric material, thereby the dispersion angle of control light-emitting diode 110, the grating space control of this diffraction grating 117 within the specific limits, the dispersion angle of light-emitting diode 110 just will be greater than the dispersion angle of general light-emitting diode, therefore need not change its design configurations and processing procedure is scalable and the degree of expansion of controlling light-emitting diode 110 lighting angles.
The present invention also has other change design, as: the light-emitting face that this encapsulating structure 115 forms is a planar structure; This a plurality of diffraction gratings unit is divided on the light-emitting face that some groups are arranged at intervals at light-emitting diode; This diffraction grating unit also can be arranged on the whole light-emitting diode light-emitting face or according on the actual required appropriate section that is arranged at light-emitting face.
Claims (9)
1. a light-emitting diode comprises a substrate, a luminescence chip and an encapsulating structure, this luminescence chip is positioned on this substrate, this encapsulating structure coats this luminescence chip and forms a light-emitting face, it is characterized in that: a diffraction grating is arranged on this light-emitting face, and this encapsulating structure is to be made and controlled its mechanical deformation by an external circuit by the transparent piezoelectric material.
2. light-emitting diode as claimed in claim 1 is characterized in that: this diffraction grating is a transmission-type diffraction grating.
3. light-emitting diode as claimed in claim 2 is characterized in that: this diffraction grating is to adopt the optical thin film with a plurality of diffraction grating structures to be attached at this light-emitting face place.
4. light-emitting diode as claimed in claim 1 is characterized in that: this diffraction grating slit opening is 1 μ m～10 μ m, and grating space is 10 μ m～30 μ m.
5. light-emitting diode as claimed in claim 1 is characterized in that: this diffraction grating is arranged on the light-emitting face of light-emitting diode continuously.
6. light-emitting diode as claimed in claim 1 is characterized in that: this diffraction grating is divided on the light-emitting face that some groups are arranged at intervals at light-emitting diode.
7. light-emitting diode as claimed in claim 1 is characterized in that: this light-emitting face is a planar structure.
8. light-emitting diode as claimed in claim 1 is characterized in that: the material of this encapsulating structure is the transparent piezoelectric pottery.
9. light-emitting diode as claimed in claim 1 is characterized in that: the material of this encapsulating structure is a Kynoar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101125171A CN100377371C (en) | 2003-12-05 | 2003-12-05 | Light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101125171A CN100377371C (en) | 2003-12-05 | 2003-12-05 | Light-emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1624938A CN1624938A (en) | 2005-06-08 |
| CN100377371C true CN100377371C (en) | 2008-03-26 |
Family
ID=34759798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101125171A Expired - Fee Related CN100377371C (en) | 2003-12-05 | 2003-12-05 | Light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100377371C (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1473647A (en) * | 1974-07-09 | 1977-05-18 | Emi Ltd | Transducing devices |
| JPH04200098A (en) * | 1990-11-29 | 1992-07-21 | Matsushita Electric Ind Co Ltd | Production of composite piezoelectric |
| JPH062167A (en) * | 1992-06-19 | 1994-01-11 | Matsushita Electric Works Ltd | Production of metallic body having fine pore and production of light emitting body for lamp |
| WO2001010296A2 (en) * | 1999-08-09 | 2001-02-15 | Cross Match Technologies, Inc. | Piezoelectric film fingerprint scanner |
| CN1365136A (en) * | 2001-01-12 | 2002-08-21 | 中国科学院半导体研究所 | Method for producing III family nitride single/multiple layer heterogeneous strain film |
-
2003
- 2003-12-05 CN CNB2003101125171A patent/CN100377371C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1473647A (en) * | 1974-07-09 | 1977-05-18 | Emi Ltd | Transducing devices |
| JPH04200098A (en) * | 1990-11-29 | 1992-07-21 | Matsushita Electric Ind Co Ltd | Production of composite piezoelectric |
| JPH062167A (en) * | 1992-06-19 | 1994-01-11 | Matsushita Electric Works Ltd | Production of metallic body having fine pore and production of light emitting body for lamp |
| WO2001010296A2 (en) * | 1999-08-09 | 2001-02-15 | Cross Match Technologies, Inc. | Piezoelectric film fingerprint scanner |
| CN1365136A (en) * | 2001-01-12 | 2002-08-21 | 中国科学院半导体研究所 | Method for producing III family nitride single/multiple layer heterogeneous strain film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1624938A (en) | 2005-06-08 |
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| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080326 Termination date: 20171205 |