CN100345998C - Method for determining optimum rotation rate for multi-station-type coating apparatus - Google Patents

Abstract

The present invention aims to provide a method for affirming the optimum autorotation and revolution speed ratio of a planar magnetic sputtering multi-station film coating device of which the patent application number is 200310110846.2. In the method, firstly, the film thickness distribution D(x, y) above a target is determined and the film thickness distribution M of the planar magnetic sputtering multi-station film coating device is obtained by using line integral; then, a corresponding n value when the mean value relative deviation or the maximal relative deviation is minimum is affirmed, and further, the optimum autorotation and revolution speed ratio can be obtained. The optimum autorotation and revolution speed ratio of the planar magnetic sputtering multi-station film coating device can be accurately affirmed by the method, so the film forming evenness of the planar magnetic sputtering multi-station film coating device is greatly increased, and further, a batch of films sputtered by the planar magnetic sputtering multi-station film coating device can be excellently used. The films have the advantages of good consistency, large area and high uniformity.

Description

A kind of method of definite planar magnetic control sputtering multi-station coating device optimized rotating speed ratio

Technical field: the invention belongs to the electric mechanical technical field, particularly the magnetron sputtering film preparation device in the electric thin technology of preparing.

Background technology

As everyone knows, magnetron sputtering is a kind of important method of preparation film, and uniformity of film is the important factor that influences film performance.About the thickness distribution model of magnetron sputtering film, existing more document is discussed ^[1-5], the research that these authors are detailed the geometric parameter of sputtering systems such as shape of the rotation of target-substrate distance, substrate and target to the influence of film gauge uniformity, but the system that they studied mostly is the fixed situation of substrate center.

[1]S.Swann.Films?thickness?Distribution?in?Magnetron?sputtering[J].Vacuum，1988，38(8-10)：791-794

[2] Yang Bangchao, Wang Wensheng etc., thin film physics and technology [M], press of University of Electronic Science and Technology, 1994

[3] Huang Jipo, Sun Chengyong etc., the establishment [J] of magnetron-sputtered film thickness distribution simulation software, electronic material and components and parts, 1996,15 (4): 32-35

[4] Song Jianquan, Liu Zhengtang, strange etc. in loyalty, plane magnetic control is built film thickness distribution simulation [J]. machine science and technology, 2001,20 (6): 884-885

[5] Zhang Suhuai, Wei Wenzhong, Yang Hui etc., target shape is to the research [J] of sputtered film thickness evenness influence, Wuhan University's journal, 1992,3:43-47

(number of patent application is: 200310110846.2) in patent application " a kind of planar magnetic control sputtering-multi-station coating device ", its structure as shown in Figure 1, " multi-work-station-magnetic control sputtering system " is the planar magnetic control sputtering filming equipment, and it comprises vacuum chamber, well heater, aeration aperture, rotation and revolution mechanism, substrate workpiece clamp etc.: it is characterized in that

(1) at least one plane magnetic controlled sputtering target 1 is positioned at vacuum film coating chamber bottom 18;

(2) well heater 15 is positioned at vacuum chamber bottom 18;

(3) aeration aperture 16 is positioned at vacuum chamber bottom 18;

(4) vacuum suction group 19 is arranged at the vacuum chamber bottom;

(5) rotating disk 3 usefulness union levers 14 are connected with external motor 9;

(6) N workpiece clamp 2 be evenly distributed on rotating disk 3 below, pass rotating disk 3 by connecting rod 4 and link together with gear 5, gear 5 is installed in above the rotating disk 3;

(7) pinion(gear) 6 links together by union lever 7 and vacuum chamber 17 external motor 8;

(8) middle gear 11 is fixed in the vacuum chamber 17 by union lever 10, middle gear 11 and pinion(gear) 6 interlocks;

(9) master wheel 13 is fixed together by union lever 12 and middle gear 11;

(10) rotation principle: external motor 8 drivening rods 7, connecting rod 7 drives pinion(gear) 6 and rotates, middle gear 11 and pinion(gear) 6 interlocks, pinion(gear) drives middle gear 11 and rotates, then middle gear 11 drives master wheel 13 rotations, and master wheel 13 is interlocked with N pinion(gear) 5, and master wheel 13 drives N pinion(gear) 5 rotations, N pinion(gear) drives N workpiece clamp 2 rotations, thereby finished the rotation process;

(11) revolution principle: external motor 9 drives rotating disk 3 by union lever 14 and rotates, and N workpiece clamp 12 and N gear 5 are fixed on the rotating disk 3, thus workpiece clamp 2 and pinion(gear) 5 revolution, thus finished the revolution process.

(12) device of the present invention is that N substrate of N workpiece clamp 2 done public affairs, rotation simultaneously, can carry out the plated film sputter to the substrate on N the workpiece clamp like this.

Adopt " a kind of planar magnetic control sputtering-multi-station coating device " can improve the area of sputtered film greatly; It once can give many group substrate spatter film formings simultaneously, and the high conformity of thickness.

As everyone knows, rotation has a significant impact with the distributing homogeneity of revolution rotating ratio for film, rotation is an important indicator of " a kind of planar magnetic control sputtering-multi-station coating device " patent with revolution optimized rotating speed ratio, but does not provide the optimized rotating speed ratio in patent " a kind of planar magnetic control sputtering-multi-station coating device ".

Summary of the invention

For convenience of description, carry out term definition:

" a kind of planar magnetic control sputtering-multi-station coating device " (number of patent application is: 200310110846.2) be called for short the multi-station coating device below us;

The average relative deviation is meant that the each point film thickness value deducts thickness mean value on the substrate on the substrate, and the absolute value summation of income value is then divided by thickness mean value on the substrate;

Maximum relative deviation is meant that the each point film thickness value deducts thickness mean value on the substrate on the substrate, and the maximum value in the absolute value of income value is divided by thickness mean value on the substrate.

The purpose of this invention is to provide " a kind of method of definite planar magnetic control sputtering multi-station coating device optimized rotating speed ratio ", adopt this method can determine the optimum rotation and revolution rotating ratio of " a kind of planar magnetic control sputtering-multi-station coating device " exactly.

" a kind of method of definite planar magnetic control sputtering multi-station coating device optimized rotating speed ratio " of the present invention is characterized in that adopting following step:

Step 1, determine multi-work-station--the film thickness distribution rule of magnetic control sputtering device

Behind the elapsed time T, multi-work-station--magnetic control sputtering system thickness M is:

$M={\∫}_{L}D(x,y)\mathrm{ds}={\∫}_{01}^{T}D(\mathrm{\ξ}\left(t\right),\mathrm{\ψ}\left(t\right))\·\sqrt{{\mathrm{\ξ}}^{\′2}\left(t\right)+{\mathrm{\ψ}}^{\′2}\left(t\right)\·\mathrm{dt}}---$

Wherein: t is a time parameter, ∫ _LBe the line integral symbol, (x y) is H place, unit time target top film thickness distribution to D

$D(x,y)=\frac{2\mathrm{SH}}{\mathrm{\π}{\mathrm{\ρ}}_0({R_2}^2-{R_1}^2)}{\∫}_{R_1}^{R_2}\frac{(H^2+{(x-b)}^2+y^2+R^2)\mathrm{RdR}}{{\left[(H^2+{(x-b)}^2+y^2+R^2+2\sqrt{{(x-b)}^2+y^2}R)(H^2+{(x-b)}^2+y^2+R^2-2\sqrt{{(x-b)}^2+y^2}R)\right]}^2}---\left(2\right)$

Wherein: ∫ _R1 ^R2---from R ₁To R ₂The line integral symbol; The sputtering raste of S---magnetic controlling target; ρ ₀---target density; R ₁, R ₂--the inside and outside radius of-etched area magnetic pole gap; The H---target-substrate distance; $\sqrt{{(x-b)}^2+y^2}=A$ --H place in-top a bit arrives the distance of pinwheel axle arbitrarily; Distance between b---target and the revolution center; A bit arrive the distance of pinwheel on the R---target arbitrarily

Any 1 p on the substrate (r, movement locus parametric equation ) is:

x＝ξ(t)＝rcos(ω _rott+)+acos(ω _revt)

y＝ψ(t)＝rsin(ω _rott+)+asin(ω _revt) (3)

Wherein: ω _Rot---substrate spin velocity; ω _Rcv---substrate revolution circular frequency; The t---time parameter, any 1 p (r, rotation radius ) on the r---substrate; Any 1 p (r, revolution radius ) on the a---substrate

$\frac{{\mathrm{\ω}}_{\mathrm{rot}}}{{\mathrm{\ω}}_{\mathrm{ret}}}=n+\mathrm{\φ}---\left(4\right)$

Wherein: n---oneself, revolution rotating ratio integral part, φ---oneself, revolution rotating ratio mantissa

Step 2, determine the distance b value between target-substrate distance H and the revolution center

Distance b value between target-substrate distance H and the revolution center is by multi-work-station--and magnetic control sputtering device provides, and the span of target-substrate distance H is 50-70mm, generally speaking, 0＜b＜R ₀, R wherein ₀Radius for target;

Step 3, determine the number m of equivalent point

On substrate, when the movement locus of the identical point of all radiuses was all identical, these points were called equivalent point, and the thickness of these points is all identical, and m is big more, and equivalent point is many more, and homogeneity is good more;

When substrate diameter is 3 inches, m 〉=8; When substrate diameter is 4 inches, m 〉=10; When substrate diameter is 5 inches, m 〉=16;

Step 4, determine the φ value

Can obtain the φ value by formula (5):

$\frac{k}{m}=\mathrm{\φ}---\left(5\right)$

Wherein k is a positive integer, by

The condition that satisfies reduced score is determined the value of k

Step 5, determine hour corresponding n value of average relative deviation or maximum relative deviation

At first, choose one group of n value arbitrarily, this group n value is: 2,3,4,5,6,7,8,9 ... 100; Utilize step 1～step 4, just can obtain the corresponding film thickness value of each n value;

Then, calculate the average relative deviation and the maximum relative deviation of the corresponding film thickness value of each n value, obtain a class mean relative deviation value and maximal phase deviate;

At last, a class mean relative deviation value that obtains from above and maximal phase are to selecting minimum average relative deviation value and minimum maximal phase to deviate in the deviate, and what these values were corresponding is exactly the optimum rotation and the rotating ratio that revolves round the sun;

Step 6 is determined optimum rotation and revolution rotating ratio

Adopt formula

$\frac{{\mathrm{\ω}}_{\mathrm{rot}}}{{\mathrm{\ω}}_{\mathrm{ret}}}=n+\mathrm{\φ}---\left(4\right)$

Just can obtain determining optimum rotation and revolution rotating ratio.

Essence of the present invention is: the invention provides number of patent application is the method for 200310110846.2 the optimum rotation of determining " a kind of planar magnetic control sputtering-multi-station coating device " and the rotating ratio that revolves round the sun, it is by obtaining the film thickness distribution D (x of target top earlier, y), utilize line integral to obtain the film thickness distribution M of the device of this structure, determine hour corresponding n value of average relative deviation or maximum relative deviation then, so can obtain optimum rotation, rotating ratio revolves round the sun.

Advantage of the present invention: adopt method of the present invention can determine the optimum rotation and revolution rotating ratio of " a kind of planar magnetic control sputtering-multi-station coating device " exactly, improve the film forming homogeneity of this device greatly, and then can optimally use this device to sputter high conformity, big, the high film uniformly of area in batches.

Description of drawings:

Fig. 1 is the structural representation of " a kind of planar magnetic control sputtering-multi-station coating device ",

Wherein: at the bottom of 1-plane magnetic controlled sputtering target, 2-workpiece clamp, 3-rotating disk, 4-union lever, 5-pinion(gear), 6-pinion(gear), 7-union lever, 8-spinning motor, 9-revoluting motor, 10--union lever, 11-middle gear, 12-union lever, 13-master wheel, 14-union lever, 15-well heater, 16-aeration aperture, 17-vacuum film coating chamber, the 18-vacuum film coating chamber, 19-vacuum suction group;

Fig. 2 is the coordinate synoptic diagram of the inventive method

Fig. 3 be " a kind of planar magnetic control sputtering-multi-station coating device " structural parameter synoptic diagram wherein: the H---target-substrate distance; $\sqrt{{(x-b)}^2+y^2}=A$ --H place in-top a bit arrives the distance of pinwheel axle arbitrarily;

Distance between b---target and the revolution center;

Fig. 4 is the structural parameter synoptic diagram that " a kind of planar magnetic control sputtering-multi-station coating device " hits, R ₁, R ₂--the inside and outside radius of-etched area magnetic pole gap; A bit arrive the distance of pinwheel on the R-target arbitrarily.

Embodiment:

When the diameter of target is 120mm, 4 inches substrate, b=180mm, H=70mm, R ₁=40mm, R ₂=50mm.At this moment, S, ρ ₀Value influence the thickness of film, but does not influence the film thickness distribution relative deviation, so establish constant 1 during processing, adopt method of the present invention, we draw: corresponding optimum rotation and revolution rotating ratio during n=5, when we chose optimum rotation with revolution rotating ratio 5.3, relative deviation was less than 3%.

Claims (1)

1, a kind of method of definite planar magnetic control sputtering multi-station coating device optimized rotating speed ratio is characterized in that adopting following step:

Step 1, determine multi-work-station--the film thickness distribution rule of magnetic control sputtering device

Behind the elapsed time T, multi-work-station--magnetic control sputtering system thickness M is:

$M={\∫}_{L}D(x,y)\mathrm{ds}={\∫}_0^{T}D(\mathrm{\ξ}\left(t\right),\mathrm{\ψ}\left(t\right))\·\sqrt{{\mathrm{\ξ}}^{\′2}\left(t\right)+{\mathrm{\ψ}}^{\′2}\left(t\right)}\·\mathrm{dt}---\left(1\right)$

Wherein: t is a time parameter, and ∫ L is the line integral symbol, and (x y) is H place, unit time target top film thickness distribution to D

$D(x,y)=\frac{2\mathrm{SH}}{{\mathrm{\π\ρ}}_0(R_2^2-R_1^2)}{\∫}_{R_1}^{R_2}\frac{(H^2+{(x-b)}^2+y^2+R^2)\mathrm{RdR}}{{\left[(H^2+{(x-b)}^2+y^2+R^2+2\sqrt{{(x-b)}^2+y^2}R)(H^2+{(x-b)}^2+y^2+R^2-2\sqrt{{(x-b)}^2+y^2}R)\right]}^{3/2}}---\left(2\right)$

Wherein: ∫ _R1 ^R2---from R ₁To R ₂The line integral symbol; The sputtering raste of S---magnetic controlling target; ρ ₀---target density; R ₁, R ₂--the inside and outside radius of-etched area magnetic pole gap; The H---target-substrate distance; $\sqrt{{(x-b)}^2+y^2}=A$ --H place in-top a bit arrives the distance of pinwheel axle arbitrarily; Distance between b---target and the revolution center; A bit arrive the distance of pinwheel on the R---target arbitrarily

Any 1 p on the substrate (r, movement locus parametric equation ) is:

x＝ξ(t)＝rcos(ω _rott+)+acos(ω _revt) (3)

y＝ψ(t)＝rsin(ω _rott+)+asin(ω _revt)

Wherein: ω _Rot---substrate spin velocity; ω _Rev---substrate revolution circular frequency; The t---time parameter, any 1 p (r, rotation radius ) on the r---substrate; Any 1 p (r, revolution radius ) on the a---substrate

$\frac{{\mathrm{\ω}}_{\mathrm{rot}}}{{\mathrm{\ω}}_{\mathrm{ret}}}=n+\mathrm{\φ}---\left(4\right)$

Wherein: n---oneself, revolution rotating ratio integral part, φ---oneself, revolution rotating ratio mantissa

Step 2, determine the distance b value between target-substrate distance H and the revolution center

Distance b value between target-substrate distance H and the revolution center is by multi-work-station--and magnetic control sputtering device provides, and the span of target-substrate distance H is 50-70mm, generally speaking, 0＜b＜R ₀, R wherein ₀Radius for target;

Step 3, determine the number m of equivalent point

On substrate, when the movement locus of the identical point of all radiuses was all identical, these points were called equivalent point, and the thickness of these points is all identical, and m is big more, and equivalent point is many more, and homogeneity is good more;

When substrate diameter is 3 inches, m 〉=8; When substrate diameter is 4 inches, m 〉=10; When substrate diameter is 5 inches, m 〉=16;

Step 4, determine the φ value

Can obtain the φ value by formula (5):

$\frac{k}{m}=\mathrm{\φ}---\left(5\right)$

Wherein k is a positive integer, by The condition that satisfies reduced score is determined the value of k

Step 5, determine hour corresponding n value of average relative deviation or maximum relative deviation

At first, choose one group of n value arbitrarily, this group n value is: 2,3,4,5,6,7,8,9 ... 100; Utilize step 1～step 4, just can obtain the corresponding film thickness value of each n value;

Then, calculate the average relative deviation and the maximum relative deviation of the corresponding film thickness value of each n value, obtain a class mean relative deviation value and maximal phase deviate;

At last, a class mean relative deviation value that obtains from above and maximal phase are to selecting minimum average relative deviation value and minimum maximal phase to deviate in the deviate, and what these values were corresponding is exactly the optimum rotation and the rotating ratio that revolves round the sun;

Step 6 is determined optimum rotation and revolution rotating ratio

Adopt formula

$\frac{{\mathrm{\ω}}_{\mathrm{rot}}}{{\mathrm{\ω}}_{\mathrm{ret}}}=n+\mathrm{\φ}---\left(6\right)$

Just can obtain determining optimum rotation and revolution rotating ratio.

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