CN100339690C - Temperature detection device, temperature detection method, and computer-readable computer program product containing temperature detection program - Google Patents

Temperature detection device, temperature detection method, and computer-readable computer program product containing temperature detection program Download PDF

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Publication number
CN100339690C
CN100339690C CNB2005100563638A CN200510056363A CN100339690C CN 100339690 C CN100339690 C CN 100339690C CN B2005100563638 A CNB2005100563638 A CN B2005100563638A CN 200510056363 A CN200510056363 A CN 200510056363A CN 100339690 C CN100339690 C CN 100339690C
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temperature
temperature detection
detection object
eliminating medium
detected
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CN1670497A (en
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刈込卓明
伊藤健
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Nissan Motor Co Ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P29/00—Arrangements for regulating or controlling electric motors, appropriate for both AC and DC motors
    • H02P29/02—Providing protection against overload without automatic interruption of supply
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/42—Circuits effecting compensation of thermal inertia; Circuits for predicting the stationary value of a temperature
    • G01K7/425—Thermal management of integrated systems
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

Heating value P[W] generated at an IGBT is calculated, and a temperature difference DeltaT'<SUB>j </SUB>[ DEG C.] between a temperature T<SUB>w </SUB>[ DEG C.] of cooling water circulating in a cooling system and a temperature T<SUB>j </SUB>[ DEG C.] of an IGBT is calculated based on thermal resistance R [ DEG C./W] of the cooling system. A temperature rise DeltaT<SUB>j </SUB>[ DEG C.] with transient influences eliminated is then calculated based on the calculated temperature difference DeltaT'<SUB>j </SUB>[ DEG C.], and the temperature T<SUB>j </SUB>[ DEG C.] (=T<SUB>w </SUB>[ DEG C.]+DeltaT<SUB>j </SUB>[ DEG C.]) of the IGBT is calculated.

Description

Temperature-detecting device and method, comprise the computer-readable program product of temperature detection program
Technical field
The present invention relates to be used to detect temperature-detecting device, temperature checking method of temperature of semiconductor module etc. and the computer-readable computer program that comprises the temperature detection program.
Background technology
Use power converter in application such as electric vehicle, wherein inverter is made of thyristor etc.Utilize this electric transducer, need to detect the temperature of semiconductor module, so that stop the temperature of semiconductor module to rise apace.In Japanese Patent Application Publication No.2000-134074, provide temperature detection diode and temperature sensing circuit to each of 6 semiconductor elements constituting semiconductor module.
Summary of the invention
But, if provide detector unit and circuit, will make temperature-detecting device be accompanied by the increase of number of spare parts and cause the increase of size and cost semiconductor element as the temperature detection object.
A kind of temperature-detecting device among the present invention comprises: the coolant temperature calculation element, be used for calculating temperature at the heat eliminating medium of cooling system, and in described cooling system, be cooled with the predetermined driven temperature detection object of driving ratio; Current sensing means is used for detecting by temperature detection object value of current flowing; Voltage check device is used to detect the magnitude of voltage that puts on the temperature detection object; And temperature computing device, be used for the temperature that the temperature of the heat eliminating medium that calculates according to the activation bit, the thermal resistance between temperature detection object and heat eliminating medium that are used for the temperature detection object and by described coolant temperature calculation element is come the accounting temperature detected object; Wherein: the current value that is detected by current sensing means, the magnitude of voltage that is detected by voltage check device and the driving ratio information that is used for the temperature detection object are included in the described activation bit that is used for the temperature detection object.
Another kind of temperature-detecting device among the present invention comprises: the coolant temperature calculation element, be used for calculating temperature at the heat eliminating medium of cooling system, and in described cooling system, be cooled with the predetermined driven temperature detection object of driving ratio; Voltage check device is used to detect the magnitude of voltage that puts on the temperature detection object; And temperature computing device, be used for the temperature that the temperature of the heat eliminating medium that calculates according to the activation bit, the thermal resistance between temperature detection object and heat eliminating medium that are used for the temperature detection object and by described coolant temperature calculation element comes the accounting temperature detected object; Wherein: be included in the described activation bit of temperature detection object by described voltage check device magnitude of voltage that detects and the vector controlled information that is used for the temperature detection object.
Temperature checking method of the present invention may further comprise the steps: the temperature of calculating the heat eliminating medium in cooling system, in described cooling system, be cooled with the predetermined driven temperature detection object of driving ratio, and the temperature of coming the accounting temperature detected object according to the temperature of the activation bit that is used for the temperature detection object, thermal resistance between temperature detection object and heat eliminating medium and described heat eliminating medium.
Description of drawings
Fig. 1 is the structural drawing that is equipped with according to the basic part of the electric vehicle of the temperature-detecting device of the first embodiment of the present invention;
Fig. 2 is the calcspar that is used to illustrate the configuration of semiconductor element Temperature Detector;
Fig. 3 is the figure that is illustrated in the relation between collector current and the collector emitter voltage;
Fig. 4 is the figure that is illustrated in the relation between semiconductor element temperature and the collector emitter voltage;
Fig. 5 is the figure that is illustrated in the relation between semiconductor element temperature and the switching losses;
Fig. 6 is the figure that is illustrated in an example of the rotating speed of motor and the relation between the thermal resistance;
Fig. 7 is the figure that is illustrated in from an example of the relation between excitation beginning elapsed time and the temperature rise;
Fig. 8 is the structural drawing that is equipped with according to the basic part of the electric vehicle of the temperature-detecting device of the second embodiment of the present invention;
Fig. 9 is the calcspar that is used to illustrate the configuration of semiconductor element Temperature Detector;
Figure 10 is the structural drawing that has according to the basic part of the vehicle of the temperature-detecting device of the fourth embodiment of the present invention;
Figure 11 is the calcspar that is used to illustrate the configuration of cooling water temperature detecting device;
Figure 12 is the structural drawing that has according to the basic part of the vehicle of the temperature-detecting device of the fifth embodiment of the present invention;
Figure 13 is the calcspar that is used to illustrate the configuration of cooling water temperature detecting device;
Figure 14 is the process flow diagram of explanation temperature detection routine processes; And
Figure 15 represents how to provide control program to personal computer.
Embodiment
First embodiment
Fig. 1 is the figure that is equipped with according to the basic part of the electric vehicle of the temperature-detecting device of the first embodiment of the present invention.In Fig. 1, semiconductor module is by 6 insulated gate bipolar transistors (IGBT) Tua, Tub, and Tva, Tvb, Twa, the Twb configuration forms.This semiconductor module constitutes an inverter, and being used for provides electric power to the motor 5 of the driver sources that constitutes vehicle.Each IGBT of carrier frequency switch by with regulation converts the DC power of battery 30 to three-phase current power.Described three-phase is corresponding to U, V, and the W phase, by the Tua of IGBT, Tub constitutes the U phase, the Tva of IGBT, Tvb constitutes the V phase, the Twa of IGBT, Twb constitutes the W phase.
Voltage sensor 1 detects the DC voltage of the every phase that puts on semiconductor module.The magnitude of voltage that detects is transmitted to current controller 7.U phase current sensor 2 detects the electric current that flows in the U of semiconductor module phase line.V phase current sensor 3 detects the electric current that flows in the V of semiconductor module phase line.W phase current sensor 4 detects the electric current that flows in the W of semiconductor module phase line.The DC current values that is detected by each current detector 2-4 is transmitted to current controller 7.
Position transducer 6 detects the position of the rotor of motor 5.Be sent to current controller 7 from the position detection signal of position transducer 6 outputs.Current controller 7 carries out the conversion of semiconductor module according to the current target value, and motor 5 is carried out drive controlling.Specifically, the every electric current that flows in mutually in semiconductor module is broken down into two orthogonal axes components, component i dThe axle that is used for magnetic axis or irritability minimum, component i qBe used for the axle of magnetic orthogonal axes or irritability maximum, and carry out coming the vector controlled of Control current as a vector.The orthogonal coordinate system that be made of d axle and q axle this moment is a coordinate system that rotates synchronously with the rotation of motor 5.
Current controller 7 to semiconductor element Temperature Detector 8 be sent in semiconductor module every mutually in value of current flowing, put on the dc voltage value of semiconductor module and be used for each IGBT (Tua, Tub, Tva, Tvb, Twa, Twb) activation bit of Denging (ON time ratio etc.).
Semiconductor module is cooled off by water-cooling type cooling system (not shown).Cooling-water temperature sensor 9 detects the temperature of the chilled water of recycle in cooling system, particularly detects the temperature of the chilled water of cooling-water temperature sensor 9 positions.The temperature that is detected by cooling-water temperature sensor 9 is sent to semiconductor element Temperature Detector 8 then.The temperature detection position of cooling-water temperature sensor 9 for example is taken near the inflow of chilled water, and described chilled water circulates in the cooling system of semiconductor element Temperature Detector.
Then, semiconductor element Temperature Detector 8 according to send by current controller 7 semiconductor module every mutually in value of current flowing, put on the dc voltage value of semiconductor module, the water temperature that detects by cooling-water temperature sensor 9 and the temperature of calculating each IGBT by the activation bit that is used for each IGBT of current controller 7 transmissions.When the detected temperatures of IGBT surpassed the decision gate limit value of regulation, semiconductor element Temperature Detector 8 sent the abnormal temperature signal to holding circuit 20.
When by semiconductor element Temperature Detector 8 input abnormal temperature signals, holding circuit 20 is carried out fail-safe operation, and it makes and reduce carrier frequency and reduce the electric current that flows in IGBT to current controller 7 output orders.
The present invention has the distinctive temperature detection operation of being carried out by semiconductor element Temperature Detector 8.In first embodiment, semiconductor element Temperature Detector 8 is in the temperature corresponding to each each IGBT of computation of Period of the range of speeds of motor 5.Detecting under the situation that reaches maximum (top) speed, each carrier cycle (for example 100 microseconds) all needs to calculate, and is only detecting under the slow-revving situation, can use than based on the slower computation of Period of the carrier cycle of rotating speed.But, this to be obtained the minimum computation period (for example 50 milliseconds) that beguine determines according to the transition model time constant that illustrates later bigger.Computation period is 100 microseconds in this example.
Fig. 2 is the calcspar that is used to illustrate the configuration of semiconductor element Temperature Detector 8.In Fig. 2, semiconductor element Temperature Detector 8 comprises heating (loss) model 10, thermal resistance model 11 and transient state (thermal capacity) model 12.Fever model 10 is calculated the heat that is produced by IGBT, the loss of promptly calculating IGBT.
According to semiconductor module every mutually in value of current flowing, put on semiconductor module dc voltage value, be used for each IGBT activation bit and on once the temperature of (preceding 100 microseconds in this example) IGBT of detecting calculate calorific capacity P[W].Described current value is used as the phase current corresponding to the IGBT that constitutes the temperature detection target.IGBT activation bit by the temperature detection target configuration is used as the IGBT activation bit.
Calorific capacity P[W] as loss P SatWith switching losses P SwSum is represented, shown in (1).
P[W]＝P sat+P sw (1)
First loss P of formula (1) Sat[W] represented by following formula (2).
P sat[W]＝i·V ce·t ON (2)
Wherein, i[A] be the collector current that constitutes the IGBT of temperature detection target.According to getting collector current i[A by the value of the phase current of current sensor senses (i ' [A])] as follows.Constitute at the IGBT that constitutes the temperature detection target under the situation of upper arm, if i=i ' is then got in i ' 〉=0, if i=0 is then got in i '＜0.Constitute at the IGBT that constitutes the temperature detection target under the situation of underarm, if i=0 is then got in i ' 〉=0, if i=-i ' is then got in i '＜0.Wherein, t ONBe the ON time ratio that constitutes the IGBT of temperature detection target, it is any value of from 0 to 1.As motor 5 during (when the revolution of time per unit during), can also get t less than the quantity of regulation with low speed rotation ONIt is a fixed value 0.5.The rotating speed of motor 5 (revolution) is according to the detection signal of being exported by position transducer 6 or according to detecting the cycle of fluctuation of the phase current that flows by semiconductor module.
Voltage V in formula (2) between the collector and emitter of IGBT Ce[V] represented by following formula (3).
V ce [ V ] = V ce 0 + V ce ( sat ) - V ce 0 k 0 &CenterDot; i - - - ( 3 )
Wherein, V Ce0[V] is as collector current i=0[A] time collector emitter voltage, V Ce (sat)[V] is as collector current i=k 0Collector emitter voltage when [A].Fig. 3 is the collector current and the collector emitter voltage V that is represented by formula (3) that is illustrated in certain semiconductor element temperature current downflow CeBetween the figure of relation.According to Fig. 3, collector emitter voltage V CeIncrease with collector current is risen.
Collector emitter voltage V CeTemperature according to semiconductor element changes.Fig. 4 is temperature and the collector emitter voltage V that is illustrated in semiconductor element under the temperature of certain semiconductor element CeBetween the figure of relation.The ratio of the longitudinal axis of Fig. 4 is different with the ratio of the longitudinal axis of Fig. 3.According to Fig. 4, collector emitter voltage V CeTemperature with semiconductor element increases and slightly rising.
Collector emitter voltage V in the formula of being included in (3) CeWhen being represented as the function of semiconductor element temperature (promptly as the IGBT of temperature detection target temperature), obtain following formula (4).This formula is obtained according to measurement data by experiment, and is stored in advance in the storer of semiconductor element Temperature Detector 8.
V ce0[V]＝k 2·T j+k 3 (4)
k 2And k 3It is the coefficient that obtains by experiment.T j[℃] be the temperature of the IGBT of preceding once (being preceding 100 microseconds in this example) detection.The result of calculation of semiconductor element Temperature Detector 8 wushu (4) is V then Ce0Substitution formula (3).By using the semiconductor element temperature T j(temperature of the IGBT of one-time detection promptly) carries out the calculating of formula (4), and semiconductor element Temperature Detector 8 can obtain corresponding to the semiconductor element temperature T jCollector emitter voltage V Ce0
Collector emitter voltage V in the formula of being included in (3) Ce (sat)When being represented as the function of semiconductor element temperature (promptly as the IGBT of temperature detection target temperature), obtain following formula (5).This formula is also obtained by experiment, and is stored in the storer of semiconductor element Temperature Detector 8.
V ce 0 ( sat ) [ V ] = k 4 &CenterDot; T j 2 + k 5 &CenterDot; T j + k 6 - - - ( 5 )
K wherein 4, k 5, k 6It is the coefficient that obtains by experiment.T j[℃] be the temperature of the IGBT of preceding once (being preceding 100 microseconds in this example) detection.The result of calculation of semiconductor element Temperature Detector 8 wushu (5) is V then Ce (sat)Substitution formula (3).By using the semiconductor element temperature T j(temperature of the IGBT of one-time detection promptly) carries out the calculating of formula (5), and semiconductor element Temperature Detector 8 can obtain corresponding to the semiconductor element temperature T jCollector emitter voltage V Ce (sat)
On the other hand, as second switching losses P of formula (1) SwCan represent by following formula (6).
P sw [ W ] = f c &CenterDot; E sw ( sat ) &CenterDot; i k 1 - - - ( 6 )
F wherein c[Hz] is switching frequency.E Sw (sat)[J] is as collector current i=k 1Switching losses when [A].Switching losses has the feature that the increase with the semiconductor element temperature increases.Fig. 5 is temperature and the switching losses E that is illustrated in semiconductor element Sw (sat)Between the figure of relation.
The E of the on-off element shown in 5 figure Sw (sat)In following formula (7), be represented as the function of the temperature of the IGBT that constitutes the temperature detection target.This formula is obtained according to measurement data by experiment, and is stored in advance in the storer of semiconductor element Temperature Detector 8.
E sw ( sat ) [ J ] = { k 7 &CenterDot; e k 8 T j &CenterDot; V dc - ( ( k 9 &CenterDot; T j + k 10 ) } &times; 10 - 3 - - - ( 7 )
K wherein 7, k 8, k 9, k 10It is the coefficient that obtains by experiment.T j[℃] be the temperature of the IGBT of preceding once (being preceding 100 microseconds in this example) detection.V Dc[V] is the dc voltage value that puts on semiconductor module.The result of calculation substitution formula (6) of semiconductor element Temperature Detector 8 wushu (7) then.
As mentioned above, semiconductor element Temperature Detector 8 is calculated the calorific capacity P[W of the IGBT that constitutes the temperature detection target by carrying out formula (1) to the calculating of formula (7)].
Thermal resistance model 11 is based on the calorific capacity P[W of the IGBT that constitutes the temperature detection target] and thermal resistance R[℃/W of cooling system] calculate at the coolant water temperature T by cooling-water temperature sensor 9 detections w[℃] and constitute temperature difference T ' between the temperature of IGBT of temperature detection target j[℃].
Thermal resistance R[℃/W] be a value corresponding with the rotating speed (rotating speed of time per unit) of motor 5.Fig. 6 is the figure that is illustrated in the example of the relation between rotating speed and the thermal resistance R1.According to Fig. 6, thermal resistance R1 raises with the increase of rotating speed, and when reaching the rotating speed of regulation, thermal resistance becomes a fixing basically value.Rpm-dependent thermal resistance R1 is as shown in Figure 6 measured in advance, and the data of measurement are stored in the storer (not shown) in the semiconductor element Temperature Detector 8.Semiconductor element Temperature Detector 8 is from the signal of current controller 7 acquisitions corresponding to the rotating speed of motor 5 then, and with reference to the data of storing in storer, and acquisition is corresponding to the thermal resistance R1 of this rotating speed.
Because in the thermal resistance model, have error, thermal resistance R[℃/W] according to the calorific capacity P[W of the IGBT that constitutes the temperature detection target] and change.In the example of heat (loss) that produces and the relation between the thermal resistance R2, thermal resistance R2 increases with the increase of calorific capacity P.The thermal resistance R2 that depends on the heat that is produced is measured in advance, and the data of measurement are stored in the storer (not shown) in the semiconductor element Temperature Detector 8.Semiconductor element Temperature Detector 8 uses the calorific capacity P[W that utilizes heating (loss) models 10 to calculate then] with reference to the data of in storer, storing, thereby obtain corresponding to this calorific capacity P[W] thermal resistance R2.
For easy explanation, provide an explanation, wherein provide list data that is used for thermal resistance R1 and the list data that is used for thermal resistance R2 respectively at semiconductor element Temperature Detector 8.But, in fact, for thermal resistance R1 and thermal resistance R2, the table of a two dimension of configuration.Semiconductor element Temperature Detector 8 is according to the rotating speed of motor 5 and the calorific capacity P table with reference to this two dimension, and obtains thermal resistance R[℃/W corresponding to rotating speed and calorific capacity P].
Semiconductor element Temperature Detector 8 is calculated because calorific capacity P[W by the calculating of carrying out following formula (8) then] the temperature difference T ' that takes place j[℃].Δ T ' j[℃] be called as the last temperature rise that obtains for the detected IGBT of its temperature.
ΔT’ j[℃]＝R·P (8)
Transient state (thermal capacity) model 12 calculates temperature rise Δ T as the IGBT of temperature detection target by the transient temperature characteristic of temperature-detecting device of compensation generation semiconductor module is applied electric current after j[℃].Δ T j[℃] be one by temperature difference T ' from calculating j[℃] in eliminate the value apply the transient influence after the electric current and to obtain.
Before beginning to encourage semiconductor module, the temperature of IGBT is identical with the temperature of chilled water.Semiconductor module being applied after electric current begins, according to the calorific capacity P[W of IGBT] temperature difference takes place between IGBT and chilled water.As calorific capacity P[W] when being fixed, this temperature difference increases when beginning to apply electric current, and equals Δ T after reaching thermal equilibrium j[℃].
Fig. 7 is illustrated in from applying the figure that electric current begins the example of the relation between elapsed time and the temperature rise.According to Fig. 7, just in time after beginning to apply electric current, the climbing speed of temperature is high, and the speed that temperature increases reduces with elapsed time, then convergence.In Fig. 7, when increase in the temperature under the low situation of motor 5 rotating speeds curve and the temperature under the high situation of motor 5 rotating speeds increase curve ratio than the time, the curve convergence under the high situation of the curve ratio rotating speed under the little situation of rotating speed gets faster.
Curve shown in Figure 7 is to obtain by the data of measuring are in advance carried out curve fitting.Temperature rise Δ T at IGBT j[℃] and last temperature rise Δ T ' j[℃] between satisfy the relation of following formula (9).
&Delta; T j ( s ) = b 2 s 2 + b 1 s + a 0 s 2 + a 1 s + a 0 &Delta; T j &prime; ( s ) - - - ( 9 )
Wherein " s " is Laplace operator, a 1, a 0, b 0, b 1It is the coefficient that obtains by experiment.Semiconductor element Temperature Detector 8 then can be to the temperature difference T ' that calculates above j[℃] carry out wave filter computing by formula (9) expression, and obtain to take into account the temperature rise Δ T of transient influence j[℃].
Formula (9) is stored in the storer in the semiconductor element Temperature Detector 8 in advance.In fact, storage is corresponding to a plurality of formula of the rotating speed of motor 5.Semiconductor element Temperature Detector 8 is selected formula according to the rotating speed of motor 5, and utilizes the formula of selecting to obtain temperature rise Δ T j[℃].
Semiconductor element Temperature Detector 8 is the water temperature T that is detected by cooling-water temperature sensor 9 w[℃] and the temperature rise Δ T that obtains for the IGBT that constitutes the temperature detection target j[℃] addition, and acquisition constitutes the temperature T of the IGBT of temperature detection target j[℃].
T j[℃]＝T w[℃]+ΔT j[℃] (10)
Semiconductor element Temperature Detector 8 repeats the temperature computation of above-mentioned IGBT at each carrier cycle to each IGBT, and result of calculation is sent to holding circuit 20.Each the IGBT temperature that obtains in these calculate is used (formula (4), (5) and (7)) in the temperature detection of IGBT next time in calculating.
The temperature checking method that is undertaken by the temperature-detecting device among first embodiment is summarized as follows.
(1) the semiconductor element Temperature Detector in temperature-detecting device 8 calculates the calorific capacity P[W that produces at the IGBT that constitutes the temperature detection target] (heating (loss) model 10), and according to thermal resistance R[℃/W of cooling system] calculate the temperature T of round-robin chilled water in cooling system w[℃] and the temperature T of IGBT j[℃] between temperature difference T ' j[℃] (thermal resistance model 11).Calorific capacity P[W] calculating according to semiconductor module every mutually in the temperature of IGBT of value of current flowing, the dc voltage value that puts on semiconductor module, the activation bit that is used for each IGBT and preceding once (for example Zhi Qian 100 microseconds) detection carry out.According to the method, can obtain the temperature of IGBT and need not directly provide temperature sensor at IGBT.Therefore, even also only need provide a temperature sensor for the semiconductor module that constitutes by a plurality of IGBT.This means and provide the situation of temperature sensor to compare, can make semiconductor module less and more cheap each IGBT.
(2) formula (4) and formula (5) are set up in this way, that is, make and calculating calorific capacity P[W] time because by the temperature T of IGBT jThe collector emitter voltage V that causes of variation CeThe fluctuation of the calorific capacity that variation caused compensated.Therefore, can accurately calculate calorific capacity P[W].As a result, improved temperature difference T ' j[℃] computational accuracy, and improved the precision of the temperature of calculating IGBT.
(3) formula (7) is set up in this way, that is, make when calculating calorific capacity owing to the temperature T by IGBT jThe switching losses E that causes of variation Sw (sat)The calorific capacity P[W that variation caused] fluctuation compensated.Therefore, can accurately calculate calorific capacity P[W].As a result, improved temperature difference T ' j[℃] computational accuracy, and improved the computational accuracy of the temperature of IGBT.
(4) thermal resistance R also according to the rotating speed of motor 5 and constitute the calorific capacity P[W of the IGBT of temperature detection target] variation separately and compensated.As a result, improved temperature difference T ' j[℃] computational accuracy, and improved the computational accuracy of the temperature of IGBT.
(5) formula (9) is set up in this way, that is, the feasible transient influence of eliminating after semiconductor module is begun to apply electric current, thus obtain from the temperature difference T ' that calculates j[℃] in eliminated the temperature rise Δ T of transient influence j[℃] (transition (thermal capacity) model 12).Therefore, can accurately obtain the temperature T of the IGBT after just in time beginning to apply electric current j[℃] (=T w[℃]+Δ T j[℃]).
(6), therefore can accurately obtain the temperature Δ T of IGBT because to each IGBT accounting temperature all j[℃], even when making that owing to the locking of motor 5 transient temperature that has only an IGBT raises.
Illustrated that one is used cooling-water temperature sensor 9 to detect in the example of the temperature of round-robin chilled water in cooling system, wherein cooling-water temperature sensor 9 is used to detect the temperature of the chilled water that flows into semiconductor module.But, cooling water temperature also can be in other position probing, for example at semiconductor module or from the outflow side of semiconductor module.But, in order to get rid of the position of the coolant water temperature fluctuation that causes owing to the thermal source outside the semiconductor module or low-temperature receiver, on the front side of cooling water path semiconductor-on-insulator module or rear side, have under the situation of thermal source or low-temperature receiver, be preferably in the semiconductor module side rather than near thermal source on the cooling water path or low-temperature receiver, detect the temperature of chilled water.
Second embodiment
Fig. 8 is the structural drawing that is equipped with according to the basic part of the electric vehicle of the temperature-detecting device of the second embodiment of the present invention.In Fig. 8, represent with identical label with Fig. 1 components identical, and omit its detailed description.Be with the difference of Fig. 1, provide semiconductor element Temperature Detector 8A and replace semiconductor element Temperature Detector 8.
Fig. 9 is the calcspar that is used to illustrate the configuration of semiconductor element Temperature Detector 8A.In Fig. 9, semiconductor element Temperature Detector 8A comprises heating (loss) model 10A, thermal resistance model 11 and transient state (thermal capacity) model 12.Semiconductor element Temperature Detector 8A detects the temperature of each IGBT with each minimum operation cycle (for example 50 milliseconds) of determining according to the time constant of transient model.Thermal resistance model 11 and transient state (thermal capacity) model 12 have respectively and identical structure shown in Figure 2, thereby omit its explanation.
Fever model 10A calculates the heat that produces at IGBT, the loss of promptly calculating IGBT in the following manner.In the following manner according to the magnitude of voltage of current value, d axle and the q axle of d axle and q axle, the temperature that puts on the IGBT that dc voltage value on the semiconductor module and last time (in this example for before 10 microseconds) detect calculates calorific capacity P[W].Should be noted that described current value is used to calculate as the phase current corresponding to the IGBT that constitutes the temperature detection target.Be used for calculating by the IGBT activation bit of the target configuration of temperature detection activation bit as IGBT.
First loss P as formula (1) Sat[W] can be represented by following formula (11).
P sat [ W ] = 2 3 i a &CenterDot; V ce 0 &CenterDot; ( 1 2 &pi; + D 4 3 &CenterDot; cos &theta; )
+ 2 3 i a 2 &CenterDot; V ce ( sat ) - V ce 0 k o &CenterDot; ( 1 8 + 2 D 3 3 &pi; &CenterDot; cos &theta; - 3 D &CenterDot; ( - 1 ) n 2 ( 6 n + 1 ) ( 6 n + 3 ) ( 6 n + 5 ) &pi; 2 cos ( 3 ( 2 n + 1 ) &theta; ) )
n = 0,1,2 , - - - ( 11 )
I wherein aBe amplitude, and represent by following formula (12) about the current phasor of d axle and q axle.
V Ce0[V] is as collector current i=0[A] time collector emitter voltage, V Ce (sat)[V] is as collector current i=k 0Collector emitter voltage when [A].Wherein D is the PWM ratio, and is represented by following formula (13).Cos θ is a power factor, is represented by following formula (14).V Ce0[V] is identical with first embodiment's, and calculates according to formula (4).V Ce (sat)[V] is identical with first embodiment's, and calculates according to formula (5).
i a = i d 2 + i q 2 - - - ( 12 )
I wherein dBe d shaft current value, i qIt is q shaft current value.
D = v a V dc 2 - - - ( 13 )
V wherein aBe amplitude, represent by following formula (14) about the voltage vector of d axle and q axle.V Dc[V] is the dc voltage value that puts on semiconductor module.
cos &theta; = i d v d + i q v q i a v a - - - ( 14 )
V wherein dBe d shaft voltage value, v qIt is q shaft voltage value.
v a = v d 2 + v q 2 - - - ( 15 )
Second switching losses P as formula (1) SwCan represent by following formula (16).
P sw [ W ] = f c &CenterDot; E sw ( sat ) &CenterDot; 2 3 i a k 1 &CenterDot; 1 &pi; - - - ( 16 )
F wherein c[Hz] is switching frequency.E Sw (sat)[J] is as collector current i=k 1Switching losses when [A].E Sw (sat)[J] is identical with first embodiment's, and calculates according to formula (7).
The temperature checking method that is undertaken by the temperature-detecting device among second embodiment is summarized as follows.
(1) the semiconductor element Temperature Detector 8A in the temperature-detecting device calculates the calorific capacity P[W that produces at the IGBT that constitutes the temperature detection target] (heating (loss) model 10A), and according to thermal resistance R[℃/W of cooling system] calculate the temperature T of round-robin chilled water in cooling system w[℃] with the temperature T of IGBT j[℃] between temperature difference T ' j[℃] (thermal resistance model 11).Calorific capacity P[W] temperature of the IGBT that detects according to the current value of being determined by current controller 7 about d axle and q axle, the magnitude of voltage about d axle and q axle, the dc voltage value that puts on semiconductor module and preceding once (for example 10 microseconds) calculates.In a second embodiment, also can obtain the temperature of IGBT and need not directly provide temperature sensor at IGBT.The same with first embodiment, even have in combination under the situation of semiconductor module of a plurality of IGBT, can make that also semiconductor module is less and more cheap.
(2) in a second embodiment, suppose that the temperature of IGBT is to calculate under the situation of fixing basically during at least one cycle of direct motor drive frequency.Therefore when rotating speed is not more than the rotating speed of determining according to the time constant of transient model, can not obtain accurate result.But, also can use the time constant determined minimum computation period (for example 50 millisecond) of basis up to the transient model of maximum (top) speed.
(3) formula (4) and formula (5) are set up in this way, that is, make and calculating calorific capacity P[W] time because by the temperature T of IGBT jThe collector emitter voltage V that causes of variation CeThe fluctuation of the calorific capacity that variation caused compensated.In addition, formula (7) is set up in this way, that is, make owing to the temperature T by IGBT jThe switching losses E that causes of variation Sw (sat)The calorific capacity P[W that variation caused] fluctuation be corrected.As a result, the same with first embodiment, improved temperature difference T ' j[℃] computational accuracy, also improved the computational accuracy of the temperature of IGBT.
The 3rd embodiment
Temperature-detecting device in the first above-mentioned embodiment and temperature-detecting device in a second embodiment also can be converted according to the rotating speed (rotating speed of time per unit) of motor 5.In this case, when the rotating speed of motor 5 is lower than a predetermined speed, carry out the temperature detection in first embodiment,, carry out the temperature detection among second embodiment when the rotating speed of motor 5 during greater than predetermined speed.
According to the 3rd embodiment, no matter the rotating speed of motor 5 how, can be used the present invention, from low speed to high speed comprising the situation of motor locked (rotating speed is 0).
The 4th embodiment
Can calculate the temperature T of chilled water without cooling-water temperature sensor according to temperature rather than according to the temperature of chilled water w[℃].Figure 10 be equipped with according to the temperature-detecting device of the fourth embodiment of the present invention the structural drawing of basic part of vehicle.In Figure 10, represent with identical label with Fig. 1 components identical, and omit its detailed description.Be with the difference of Fig. 1, provide temperature sensor 13 to replace cooling-water temperature sensor 9, and cooling water temperature detecting device 14 is provided.Temperature sensor 13 detects the temperature (for example near the position of the IGBT Twa in the middle of 6 IGBT) of conductor temperature module peripheries.By the calculating of stipulating according to the temperature that is detected by temperature sensor 13, cooling water temperature detecting device 14 obtains the temperature of chilled water.
Figure 11 is the calcspar that is used to illustrate the configuration of cooling water temperature detecting device 14.In Figure 11, chilled water detecting device 14 comprises heating (loss) model 10B, thermal resistance model 11B and transient state (thermal capacity) model 12B.Cooling water temperature detecting device 14 detects the temperature of chilled water with the cycle identical with first embodiment (for example 100 microseconds).
Fever model 10B calculates the heat that produces at IGBT Twa, promptly calculates the loss P of IGBT Twa Twa[W].Its operation is identical with the processing of being undertaken by the heating among first embodiment (loss) model 10, thereby omits its detailed description.
Thermal resistance model 11B is based on IGBT T WaCalorific capacity P TwaThe thermal resistance R of the installation site of [W] and temperature sensor 13 13[℃/W] calculates the temperature T in the installation site of temperature sensor 13 13[℃] with the temperature T of chilled water Ww[℃] between temperature difference T ' Ww[℃].Thermal resistance R 13[℃/W] measured in advance and be stored in the storer (not shown) in the cooling water temperature detecting device 14.Cooling water temperature detecting device 14 uses the calorific capacity P that is calculated by heating (loss) model 10B then Twa[W] is with reference to the data of storing in storer, and acquisition is corresponding to calorific capacity P TwaThe thermal resistance R13 of [W].
Then, cooling water temperature detecting device 14 calculates because calorific capacity P by means of the calculating of carrying out following formula (17) Twa[W] and the temperature difference T ' that takes place Ww[℃].
ΔT’ ww[℃]＝R 13[℃/W]×P Twa[W] (17)
Transient state (thermal capacity) model 12B calculates the temperature difference T of chilled water by the transient temperature characteristic of compensation temperature-detecting device of generation after semiconductor module is applied electric current Ww[℃].Δ T Ww[℃] be one by temperature difference T ' from calculating Ww[℃] the middle value of eliminating the transient influence after beginning to apply electric current and obtaining.
Use and be used for the identical processing of formula (9), use Laplace operator, at the temperature difference T of chilled water Ww[℃] and comprise the temperature difference T ' of transient influence Ww[℃] between relation can use following formula (18) expression.
&Delta; T ww ( s ) = d 2 s 2 + d 1 s + c 0 s 2 + c 1 s + c 0 &Delta; T &prime; ww ( s ) - - - ( 18 )
Wherein " s " is Laplace operator, c 1, c 0, d 0, d 1It is the coefficient that obtains by experiment.Cooling water temperature detecting device 14 is the temperature difference T ' that calculates Ww[℃] substitution formula (18), thereby acquisition does not comprise the temperature difference T of transient influence Ww[℃].
Then, cooling water temperature detecting device 14 is the temperature T that is detected by temperature sensor 13 13[℃] and temperature difference T Ww[℃] addition, as the formula (19), therefore, obtain the temperature T of chilled water Ww[℃].
T ww[℃]＝T 13[℃]+ΔT ww[℃] (19)
Then, semiconductor element Temperature Detector 8 or the semiconductor element Temperature Detector 8A in second embodiment of cooling water temperature detecting device 14 in first embodiment sends the temperature T that obtains Ww[℃].In addition, semiconductor element Temperature Detector 8 or semiconductor element Temperature Detector 8A calculate the temperature as the IGBT of temperature detection target, wherein use the temperature T of the chilled water that is calculated by cooling water temperature detecting device 14 Ww[℃] replace the temperature T of the chilled water that detects by chilled water sensor 9 among above-mentioned first embodiment (or second embodiment) w[℃].
According to the temperature-detecting device among the 4th embodiment, be provided for detecting IGBT T WaNear the temperature sensor 13 of temperature replaces cooling-water temperature sensors, and by using the temperature that detects by temperature sensor 13 to calculate, to obtain the temperature of chilled water.Therefore, cooling-water temperature sensor need be set in chilled water.As a result, can eliminate the leakage that takes place at cooling-water temperature sensor.
The 5th embodiment
In the 5th embodiment, provided a temperature T according to chilled water w[℃] the modification example operated.Figure 12 is the structural drawing of basic part of vehicle that the temperature-detecting device of the 5th embodiment is installed.In Figure 12, represent with identical label with the components identical shown in Figure 10 (the 4th embodiment), and omit its detailed description.Be with the difference of Figure 10, (on-chip) sensor 15 replacement cooling-water temperature sensors 13 on the sheet be provided, and cooling water temperature detecting device 14A is provided.Sheet upper sensor 15 is set to detect the IGBT that temperature is the highest in the middle of semiconductor module (IGBT T for example Wa) temperature at center of chip.Cooling water temperature detecting device 14A obtains the temperature of chilled water by the calculating of stipulating according to the temperature that is detected by sheet upper sensor 15.
Figure 13 is the calcspar that is used to illustrate the configuration of cooling water temperature detecting device 14A.Cooling water temperature detecting device 14A comprises heating (loss) model 10C, thermal resistance model 11C and transient state (thermal capacity) model 12C.Cooling water temperature detecting device 14A with first embodiment in identical cycle (for example, 100 microseconds) detect the temperature of chilled water.
Fever model 10C calculates at IGBT T WaThe heat that produces promptly calculates IGBT T WaLoss P Twa[W].Its operational processes is identical with the processing of heating (loss) model 10 among first embodiment, thereby omits its detailed description.But, use the IGBT T that detects by sheet upper sensor 15 WaSheet on temperature replace the last IGBT temperature that detects.
Thermal resistance model 11C is based on IGBT T WaCalorific capacity P TwaThe thermal resistance R of [W] and cooling system 15[℃/W] calculates the temperature T that is detected by sheet upper sensor 15 15[℃] and the temperature T of chilled water Ww[℃] between temperature difference T ' Ww[℃].Thermal resistance R 15[℃/W] measured in advance and be stored in the storer (not shown) in the cooling water temperature detecting device 14A.Cooling water temperature detecting device 14A uses the calorific capacity P that is calculated by heating (loss) model 10C then Twa[W] is with reference to the data of storing in storer, thereby acquisition is corresponding to calorific capacity P TwaThe thermal resistance R15 of [W].
Then, cooling water temperature detecting device 14A calculates because calorific capacity P by means of the calculating of carrying out following formula (20) Twa[W] and the temperature difference T ' that takes place Ww[℃].
ΔT’ ww[℃]＝R 15[℃/W]+P Twa[W (20)
Transient state (thermal capacity) model 12C calculates the temperature difference T of chilled water by the transient temperature characteristic of compensation temperature-detecting device of generation after semiconductor module is applied electric current Ww[℃].Δ T Ww[℃] be one by temperature difference T ' from calculating Ww[℃] the middle value of eliminating the transient influence after beginning to apply electric current and obtaining.
Use and the identical processing of formula (9), use Laplace operator, the temperature difference T of chilled water Ww[℃] and comprise the temperature difference T ' of transient influence Ww[℃] can represent with above-mentioned formula (18).The actual value of coefficient is different with the 4th embodiment's.Cooling water temperature detecting device 14A is the temperature difference T ' that calculates Ww[℃] substitution formula (18), and acquisition does not comprise the temperature difference T of transient influence Ww[℃].
Then, cooling water temperature detecting device 14A is the temperature T that is detected by sheet upper sensor 15 15[℃] and temperature difference T Ww[℃] addition, as the formula (21), therefore, obtain the temperature T of chilled water Ww[℃].
T ww[℃]＝T 15[℃]+ΔT ww[℃] (21)
Then, semiconductor element Temperature Detector 8 or the semiconductor element Temperature Detector 8A in second embodiment of cooling water temperature detecting device 14C in first embodiment sends the temperature T that obtains Ww[℃].In addition, semiconductor element Temperature Detector 8 or semiconductor element Temperature Detector 8A calculate the temperature as the IGBT of temperature detection target, wherein use the temperature T of the chilled water that is calculated by cooling water temperature detecting device 14 Ww[℃] replace the water temperature T that detects by chilled water sensor 9 among above-mentioned first embodiment (or second embodiment) w[℃].
According to the 5th embodiment, be provided for detecting IGBT T WaThe sheet upper sensor 15 of chip temperature replace cooling-water temperature sensors, and by using the temperature that detects by sheet upper sensor 15 to calculate, to obtain the temperature of chilled water.Therefore, the same with the 4th embodiment, do not need to be provided with cooling-water temperature sensor.
In the 5th embodiment, when providing sheet upper sensor 15, in calculating, use the semiconductor element Temperature Detector 8 (or semiconductor element Temperature Detector 8A) of the coolant water temperature calculate to omit (IGBT T for example for IGBT Wa) temperature detection calculate.That is, the temperature that is detected by sheet upper sensor 15 can be used as IGBT T WaTemperature.
In addition, in the 5th embodiment, only under the situation of motor 5 rotations (non-locking), the semiconductor element Temperature Detector 8A that the cooling water temperature that use is calculated calculates just can omit each IGBT is carried out the temperature detection operation.Under motor 5 rotating situations, the highest IGBT of temperature is identical (IGBT T in this example, in the conductor temperature module Wa).Therefore the temperature of other IGBT can be thought normally, as long as IGBT T WaTemperature (maximum temperature) be not abnormal temperature.
The above embodiments are some examples, can make various changes under the situation that does not depart from the scope of the present invention and conceive.For example, in the superincumbent explanation, provided the example of the temperature that under the situation of water-cooling system, is used to detect IGBT, but the present invention also can be applied to use gas for example or the oil situation as other cooling system of heat eliminating medium.
Provided the explanation of the example of a temperature that is used to detect IGBT, but this never is to be used to limit the present invention, the present invention can also be applied to detect the situation of the temperature of the circuit component that is switched on and ends.
The present invention (for example can be applied to this situation, extreme temperatures, the temperature detection object that detects is minimum, the complex-shaped and temperature detection object of temperature detection object is in the environment that temperature sensor can not be set), wherein temperature sensor can not directly be installed on the temperature detection object (IGBT in above-mentioned example).
In the superincumbent explanation, the explanation that provides is to have prepared a table about the bidimensional of resistance R 1 and resistance R 2 in semiconductor element Temperature Detector 8.The table that preferably all prepares a bidimensional for each IGBT, but also can be used for all IGBT in operation for bidimensional table of a typical IGBT preparation.A typical IGBT is considered to be in the highest IGBT (being the thermal resistance value maximum) of temperature in the semiconductor module.
Prepare a program that is used for carrying out with semiconductor element Temperature Detector 8 (8A) temperature detection operation, this program can be read into personal computer etc., as temperature-detecting device.In this case, by means of in the data storage device of personal computer that this program is packed into and carry out this program and constitute temperature-detecting device.Packing into of program can perhaps download to program in the personal computer by network and realize by the recording medium that stores described program is installed in personal computer.
Figure 14 is the process flow diagram of explanation temperature detection routine processes.At step S11, the computer installation accounting temperature detects the calorific capacity P[W that target (IGBT) produces], operation enters step S12 then.
At step S12, computer installation is according to calorific capacity P[W] and thermal resistance R[℃/W of cooling system] temperature (temperature T of water that detects by temperature sensor (cooling-water temperature sensor 9) calculated w[℃] and the temperature T of temperature detection target (IGBT) j[℃] between temperature difference T ' j[℃].
Step S13 after step S12, computer installation calculate the temperature rise Δ T of the transient effect of (applying after the electric current) after the object excitation be not included in detected temperatures j[℃], operation enters step S14 then.
At step S14, computer installation is the temperature T that is detected by temperature sensor (cooling-water temperature sensor 9) w[℃] (the temperature T of water w[℃]) and do not comprise the temperature rise Δ T of transient effect j[℃] add together, thereby the temperature T of calculating object j[℃].When the temperature T of calculating object j[℃] time, operation enters step S15.
At step S15, computer installation determines whether processing is finished.When having carried out complete operation, computer installation is then made sure judgement at step S15, and process flow diagram shown in Figure 14 finishes.On the other hand, when complete operation was not carried out, then step S11 was returned in operation.
When making the present invention be applicable to personal computer or its analog, can for example provide this control program on CD-ROM or the DVD-ROM at recording medium, perhaps on internet or its analog, provide this control program as data-signal.Figure 15 represents how this realizes.Personal computer 100 receives described program by CD-ROM 104.In addition, personal computer 100 has the function that can be connected with communication line 101.Computing machine 102 is server computers, and it is provided at for example program stored in the hard disk 103 of recording medium.Communication line 101 can be the communication line that is used for internet communication, personal computer communication or its analog, or special-purpose communication line.Computing machine 102 is from hard disk 103 read routines, and by communication line 101 program sent to personal computer 100.That is, program is comprised on the carrier wave as data-signal, and transmits by communication line 101.In other words, program can be used as computer-readable computer program distributes, and it can adopt any way, for example recording medium and carrier wave.
Following is included in this as a reference in first to file:
On March 19th, 2004, the application number of application was the Japanese patent application of 2004-81572.

Claims (14)

1. temperature-detecting device comprises:
The coolant temperature calculation element is used for calculating the temperature at the heat eliminating medium of cooling system, in described cooling system, is cooled with the predetermined driven temperature detection object of driving ratio;
Current sensing means is used for detecting by temperature detection object value of current flowing;
Voltage check device is used to detect the magnitude of voltage that puts on the temperature detection object; And
Temperature computing device is used for the temperature that the temperature of the heat eliminating medium that calculates according to the activation bit, the thermal resistance between temperature detection object and heat eliminating medium that are used for the temperature detection object and by described coolant temperature calculation element comes the accounting temperature detected object; Wherein:
The current value that is detected by current sensing means, the magnitude of voltage that is detected by voltage check device and the driving ratio information that is used for the temperature detection object are included in the described activation bit that is used for the temperature detection object.
2. temperature-detecting device as claimed in claim 1, wherein:
Temperature around the coolant temperature calculation element detected temperatures detected object, and the magnitude of voltage that detects according to the current value that detects by current sensing means, by voltage check device, the driving rate information that is used for the temperature detection object, calculate the temperature of heat eliminating medium in the position of detected temperatures and the thermal resistance between the heat eliminating medium and detected environment temperature.
3. temperature-detecting device as claimed in claim 1, wherein:
Have a plurality of temperature detection objects, and the coolant temperature calculation element detects the temperature of a temperature detection object in the middle of a plurality of temperature detection objects, and the magnitude of voltage that detects according to the current value that is detected by current sensing means, by voltage check device, the driving rate information that is used for this temperature detection object, calculates the temperature of heat eliminating medium in the detected temperature of the position of detected temperatures and the thermal resistance between the heat eliminating medium and this temperature detection object.
4. temperature-detecting device comprises:
The coolant temperature calculation element is used for calculating the temperature at the heat eliminating medium of cooling system, in described cooling system, is cooled with the predetermined driven temperature detection object of driving ratio;
Voltage check device is used to detect the magnitude of voltage that puts on the temperature detection object; And
Temperature computing device is used for the temperature that the temperature of the heat eliminating medium that calculates according to the activation bit, the thermal resistance between temperature detection object and heat eliminating medium that are used for the temperature detection object and by described coolant temperature calculation element comes the accounting temperature detected object; Wherein:
Be included in the described activation bit of temperature detection object by described voltage check device magnitude of voltage that detects and the vector controlled information that is used for the temperature detection object.
5. temperature-detecting device as claimed in claim 4, wherein:
Temperature around the coolant temperature calculation element detected temperatures detected object, and according to the magnitude of voltage that detects by voltage check device, be used for the vector controlled information of temperature detection object, calculate the temperature of heat eliminating medium in the position of detected temperatures and the thermal resistance between the heat eliminating medium and detected environment temperature.
6. temperature-detecting device as claimed in claim 4, wherein:
Have a plurality of temperature detection objects, and the coolant temperature calculation element detects the temperature of a temperature detection object in the middle of a plurality of temperature detection objects, and according to the magnitude of voltage that detects by voltage check device, be used for the vector controlled information of this temperature detection object, calculate the temperature of heat eliminating medium in the detected temperature of the position of detected temperatures and the thermal resistance between the heat eliminating medium and this temperature detection object.
7. as claim 3 or 6 described temperature-detecting devices, wherein:
The coolant temperature calculation element detects has the temperature of the temperature detection object of maximum temperature in described a plurality of temperature detection objects.
8. as claim 1 or 4 described temperature-detecting devices, wherein:
Temperature computing device calculates the heat at temperature detection object place, come the temperature difference between accounting temperature detected object and the heat eliminating medium according to the heat that calculates and thermal resistance, calculate so that from the temperature difference of being calculated, eliminate the transient response component of cooling system, and the temperature of coming the accounting temperature detected object by the temperature that the described temperature difference is added on the heat eliminating medium of calculating.
9. as any one described temperature-detecting device in the claim 2,3,5,6, wherein:
The coolant temperature calculation element calculates the heat at temperature detection object place, come the detected temperature around the accounting temperature detected object and the temperature difference between the heat eliminating medium according to the heat that calculates and thermal resistance, calculate so that from the temperature difference of calculating, eliminate the transient response component of cooling system, and calculate the temperature of heat eliminating medium by the temperature that the described temperature difference is added on detection.
10. temperature-detecting device as claimed in claim 8, wherein:
Temperature detection is used to produce the AC power that offers AC motor to liking on-off element, and
Described temperature computing device is proofreaied and correct described thermal resistance according to the rotating speed and the described heat of AC motor, and is proofreaied and correct described transient response component according to described rotating speed according to the described heat of the temperature correction of temperature detection object.
11. temperature-detecting device as claimed in claim 9, wherein:
Temperature detection is used to produce the AC power that offers AC motor to liking on-off element, and
Described coolant temperature calculation element is proofreaied and correct described thermal resistance according to the rotating speed and the described heat of AC motor, and is proofreaied and correct described transient response component according to described rotating speed according to the described heat of the temperature correction of temperature detection object.
12. a temperature-detecting device comprises:
Temperature-detecting device as claimed in claim 1 is used for the temperature of accounting temperature detected object, and described temperature detection object is converted by this way, that is, make to produce the AC power that offers AC motor;
Temperature-detecting device as claimed in claim 4 is used for the temperature of accounting temperature detected object; And
Control device, when its rotating speed in AC motor is lower than the speed of regulation, the temperature that selection is calculated by the described temperature-detecting device of claim 1, and when the rotating speed of AC motor is higher than the speed of this regulation, select the temperature of calculating by the described temperature-detecting device of claim 4.
13. a temperature checking method may further comprise the steps:
The temperature of the heat eliminating medium of calculating in cooling system in described cooling system, is cooled with the predetermined driven temperature detection object of driving ratio; And
The temperature of coming the accounting temperature detected object according to the temperature of the activation bit that is used for the temperature detection object, thermal resistance between temperature detection object and heat eliminating medium and described heat eliminating medium.
14. temperature checking method according to claim 13, the step of the temperature of the described temperature detection object of described calculating also comprises:
The heat that calculating takes place at temperature detection object place;
Calculate the temperature difference between the heat eliminating medium in temperature detection object and cooling system according to the heat that calculates and in the thermal resistance between temperature detection object and the heat eliminating medium, in described cooling system, described temperature detection object is cooled;
From the temperature difference of calculating, remove the transient response component of described cooling system; And
Temperature by accounting temperature detected object on the temperature that the temperature difference of therefrom having removed the transient response component is added to heat eliminating medium.
CNB2005100563638A 2004-03-19 2005-03-18 Temperature detection device, temperature detection method, and computer-readable computer program product containing temperature detection program Expired - Fee Related CN100339690C (en)

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