JP4032746B2 - Semiconductor module - Google Patents

Semiconductor module Download PDF

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Publication number
JP4032746B2
JP4032746B2 JP2002002283A JP2002002283A JP4032746B2 JP 4032746 B2 JP4032746 B2 JP 4032746B2 JP 2002002283 A JP2002002283 A JP 2002002283A JP 2002002283 A JP2002002283 A JP 2002002283A JP 4032746 B2 JP4032746 B2 JP 4032746B2
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Prior art keywords
temperature
semiconductor
semiconductor module
temperature detection
igbt
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JP2003204028A (en
Inventor
泰孝 小林
強 大久保
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Toyota Motor Corp
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Toyota Motor Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Description

【０００１】
【発明の属する技術分野】
本発明は、半導体モジュールに関する。特に本発明は、半導体モジュールの温度を検出する温度検出回路に関する。
【０００２】
【従来の技術】
従来、半導体モジュールの熱暴走による損傷を防止するために、半導体モジュールを構成する半導体素子の温度を検出し、検出温度が所定温度以上になった場合に、半導体モジュールの温度を抑制する制御が行なわれている。
【０００３】
たとえば、特開２０００−１３４０７４号公報は、半導体モジュールを構成する各半導体素子に設けられた温度検出ダイオードを用いて、各半導体素子の温度を検出した上で、半導体素子の温度が最も高い箇所の温度情報を選択して出力している（図３参照）。
【０００４】
【発明が解決しようとする課題】
従来は、半導体モジュールの各半導体素子に設けられた温度検出ダイオード毎に、温度検出回路が設けられていた。温度検出回路は、温度検出ダイオードで発生する電圧を増幅するアンプやそれに付随する基板等の部品を要するため、半導体モジュールが大型化し、高コスト化や検査工数の増大の要因となっていた。
【０００５】
そこで本発明は、上記の課題を解決することのできる半導体モジュールを提供することを目的とする。
【０００６】
【課題を解決するための手段】
即ち、本発明は、複数の半導体素子で構成される半導体モジュールにおいて、前記複数の半導体素子の中で最高温度になる１つの半導体素子の温度を検出する温度検出素子と、該温度検出素子のみに接続される温度検出回路と、を備える。
また、本発明は、複数の半導体素子で構成される半導体モジュールにおいて、前記複数の半導体素子の中で最高温度になる半導体素子以外の１つの半導体素子の温度を検出する温度検出素子と、該温度検出素子のみに接続される温度検出回路と、最高温度になる半導体素子の温度と、温度検出回路によって検出される半導体素子の温度との間についての相関関係を示す相関データを用いて最高温度となる半導体素子の温度を求めることを特徴とする。
【０００７】
最高温度となる半導体素子は常に同一の半導体素子であるので、最高温度となる半導体素子の温度を把握しておけば、半導体モジュールの最高温度も把握できることになる。このため、温度検出回路を最高温度となる半導体素子のみに設けることにより、半導体モジュールは簡素化し、低コスト化、および部品点数の減少により検査工数の削減を図ることができる。
【０００８】
本発明の前記温度検出がされる半導体素子は、該半導体素子を取り囲む他の半導体素子の数が最も多くてもよい。
【０００９】
【発明の実施の形態】
以下、発明の実施の形態を通じて本発明を説明する。
【００１０】
図１は、実施形態に係る半導体モジュール１０の概略構成を示す。
【００１１】
半導体モジュール１０は、ＩＧＢＴ素子２０ａ，２０ｂ，２０ｃ，２０ｄ，２０ｅ，２０ｆにより３相ブリッジが構成され、スイッチング信号生成部（図示せず）からの信号によりスイッチングを行い３相交流を生成する。各ＩＧＢＴ素子２０ａ，２０ｂ，２０ｃ，２０ｄ，２０ｅ，２０ｆには、それぞれ温度検出用ダイオード３０ａ，３０ｂ，３０ｃ，３０ｄ，３０ｅ，３０ｆが設けられている。
【００１２】
本実施形態においては、ＩＧＢＴ素子２０ａ−ｆの中で、ＩＧＢＴ素子２０ｄが最高温度を示すものとする。このＩＧＢＴ素子２０ｄに設けられた温度検出用ダイオード３０ｄは、温度検出回路４０と接続されている。温度検出回路４０は、温度検出用ダイオード３０ｄで発生する電圧を増幅させる回路と、ノイズを除去するフィルタとを有する。なお、温度検出回路４０は、従来のように各ＩＧＢＴ素子毎に設けられているのではなく、最高温度となるＩＧＢＴ素子２０ｄ用の回路構成のみを備える。温度検出回路４０で検出されたＩＧＢＴ素子２０ｄの温度は、図示しない半導体モジュール１０用の保護回路に送信され、半導体モジュール１０の保護動作の要否の判断に用いられる。
【００１３】
なお、発明者らは、半導体モジュール１０を様々な動作条件で動作させたときの各ＩＧＢＴ素子の温度を観察する実験を行なった結果、いずれの動作条件においてもＩＧＢＴ素子２０ｃまたは２０ｄが最高温度になることを確認した。これは、ＩＧＢＴ素子２０ｃまたは２０ｄは、これらを取り囲むＩＧＢＴ素子の数が他のＩＧＢＴ素子２０ａ，２０ｂ，２０ｅ，２０ｆよりも多いため、熱放出効率が落ちるためと推測される。すなわち、最高温度となるＩＧＢＴ素子（本観察例のように、最高温度となるＩＧＢＴ素子が２つあるときは、そのどちらか）をモニターしておけば、半導体モジュール１０の最高温度を把握することができる。
【００１４】
以上のように、最高温度となるＩＧＢＴ素子２０ｄの温度を検出することにより、半導体モジュール１０の最高温度を確実に把握することができる。また、温度検出回路４０はＩＧＢＴ素子１個分の回路構成で済むので、温度検出回路４０およびこれに関連する基板等の部品が簡素化され、低コスト化および検査工数の簡便化を図ることができる。
【００１５】
なお、本実施形態においては、各ＩＧＢＴ素子２０ａ，２０ｂ，２０ｃ，２０ｄ，２０ｅ，２０ｆに、それぞれ温度検出用ダイオード３０ａ，３０ｂ，３０ｃ，３０ｄ，３０ｅ，３０ｆが設けられていたが、最高温度となるＩＧＢＴ素子２０ｄのみに、温度検出用ダイオード３０ｄが設けられていてもよい。
【００１６】
なお、変形例として、基本構成は上記実施形態と同様とした上で、温度検出を行なうＩＧＢＴ素子を最高温度となるＩＧＢＴ素子２０ｄ以外の素子（例えば、ＩＧＢＴ素子２０ａ）に設けてもよい。この場合には、予め求められたＩＧＢＴ素子２０ａと２０ｄとの温度の相関関係を示す相関データを別途備え、ＩＧＢＴ素子２０ａの検出温度と、相関データとを用いて、最高温度となるＩＧＢＴ素子２０ｄの温度が推定する手段を設けることにより、温度検出回路４０を簡素化した状態で、半導体モジュール１０の最高温度を把握することができる。
【００１７】
【発明の効果】
上記説明から明らかなように、本発明によれば、半導体モジュール１０の回路構成を簡素化し、低コスト化、検査工数の削減を図ることができる。
【図面の簡単な説明】
【図１】 実施形態に係る半導体モジュール１０の概略構成を示す図である。
【図２】 ＩＧＢＴ素子２０ａ−ｆの温度相関を示す図である。
【図３】 従来例の半導体モジュール１２の概略構成を示す図である。
【符号の説明】
１０ 半導体モジュール、２０ａ，２０ｂ，２０ｃ，２０ｄ，２０ｅ，２０ｆＩＧＢＴ素子、３０ａ，３０ｂ，３０ｃ，３０ｄ，３０ｅ，３０ｆ 温度検出用ダイオード、４０ 温度検出回路。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor module. In particular, the present invention relates to a temperature detection circuit that detects the temperature of a semiconductor module.
[0002]
[Prior art]
Conventionally, in order to prevent damage due to thermal runaway of a semiconductor module, the temperature of a semiconductor element constituting the semiconductor module is detected, and when the detected temperature exceeds a predetermined temperature, control for suppressing the temperature of the semiconductor module has been performed. It is.
[0003]
For example, Japanese Patent Laid-Open No. 2000-134074 discloses a method of detecting the temperature of each semiconductor element using a temperature detection diode provided in each semiconductor element constituting the semiconductor module and Temperature information is selected and output (see FIG. 3).
[0004]
[Problems to be solved by the invention]
Conventionally, a temperature detection circuit is provided for each temperature detection diode provided in each semiconductor element of the semiconductor module. Since the temperature detection circuit requires an amplifier that amplifies the voltage generated by the temperature detection diode and a component such as a substrate accompanying the amplifier, the semiconductor module is increased in size, increasing the cost and increasing the number of inspection steps.
[0005]
Accordingly, an object of the present invention is to provide a semiconductor module that can solve the above-described problems.
[0006]
[Means for Solving the Problems]
That is, the present invention provides a semiconductor module including a plurality of semiconductor elements, a temperature detecting element for detecting the temperature of the one semiconductor element comprising a maximum temperature among the plurality of semiconductor elements, the temperature detection element only and a temperature detecting circuit connected to.
The present invention also relates to a temperature detection element that detects the temperature of one semiconductor element other than the semiconductor element that has the highest temperature among the plurality of semiconductor elements in a semiconductor module including a plurality of semiconductor elements, and the temperature. The maximum temperature using the correlation data indicating the correlation between the temperature detection circuit connected only to the detection element, the temperature of the semiconductor element that becomes the highest temperature, and the temperature of the semiconductor element detected by the temperature detection circuit The temperature of the semiconductor element is obtained.
[0007]
Since the semiconductor element having the highest temperature is always the same semiconductor element, if the temperature of the semiconductor element having the highest temperature is grasped, the highest temperature of the semiconductor module can be grasped. For this reason, by providing the temperature detection circuit only in the semiconductor element having the highest temperature, the semiconductor module can be simplified, the cost can be reduced, and the number of inspection steps can be reduced by reducing the number of parts.
[0008]
The number of other semiconductor elements surrounding the semiconductor element may be the largest in the semiconductor element that detects the temperature of the present invention.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described through embodiments of the invention.
[0010]
FIG. 1 shows a schematic configuration of a semiconductor module 10 according to the embodiment.
[0011]
In the semiconductor module 10, a three-phase bridge is configured by the IGBT elements 20a, 20b, 20c, 20d, 20e, and 20f, and switching is performed by a signal from a switching signal generation unit (not shown) to generate a three-phase alternating current. The IGBT elements 20a, 20b, 20c, 20d, 20e, and 20f are provided with temperature detection diodes 30a, 30b, 30c, 30d, 30e, and 30f, respectively.
[0012]
In the present embodiment, it is assumed that the IGBT element 20d exhibits the highest temperature among the IGBT elements 20a-f. The temperature detection diode 30d provided in the IGBT element 20d is connected to the temperature detection circuit 40. The temperature detection circuit 40 includes a circuit that amplifies the voltage generated by the temperature detection diode 30d and a filter that removes noise. Note that the temperature detection circuit 40 is not provided for each IGBT element as in the prior art, but includes only a circuit configuration for the IGBT element 20d having the highest temperature. The temperature of the IGBT element 20d detected by the temperature detection circuit 40 is transmitted to a protection circuit for the semiconductor module 10 (not shown), and is used to determine whether or not the protection operation of the semiconductor module 10 is necessary.
[0013]
The inventors have conducted experiments to observe the temperature of each IGBT element when the semiconductor module 10 is operated under various operating conditions. As a result, the IGBT element 20c or 20d reaches the maximum temperature under any operating condition. It was confirmed that This is presumably because the IGBT element 20c or 20d has a larger number of IGBT elements surrounding them than the other IGBT elements 20a, 20b, 20e, and 20f, so that the heat release efficiency is lowered. That is, the maximum temperature of the semiconductor module 10 can be grasped by monitoring the IGBT element having the highest temperature (if there are two IGBT elements having the highest temperature as in this observation example). Can do.
[0014]
As described above, the maximum temperature of the semiconductor module 10 can be reliably grasped by detecting the temperature of the IGBT element 20d that is the maximum temperature. Further, since the temperature detection circuit 40 only needs to have a circuit configuration corresponding to one IGBT element, the temperature detection circuit 40 and related parts such as a board can be simplified, and the cost can be reduced and the inspection man-hour can be simplified. it can.
[0015]
In the present embodiment, each of the IGBT elements 20a, 20b, 20c, 20d, 20e, and 20f is provided with the temperature detecting diodes 30a, 30b, 30c, 30d, 30e, and 30f. The temperature detecting diode 30d may be provided only in the IGBT element 20d.
[0016]
As a modification, the basic configuration may be the same as that of the above embodiment, and the IGBT element that performs temperature detection may be provided in an element other than the IGBT element 20d having the highest temperature (for example, the IGBT element 20a). In this case, separately provided correlation data indicating the correlation between the temperatures of the IGBT elements 20a and 20d obtained in advance, and using the detected temperature of the IGBT element 20a and the correlation data, the IGBT element 20d having the highest temperature. By providing the means for estimating the temperature of the semiconductor module 10, it is possible to grasp the maximum temperature of the semiconductor module 10 with the temperature detection circuit 40 simplified.
[0017]
【The invention's effect】
As is apparent from the above description, according to the present invention, the circuit configuration of the semiconductor module 10 can be simplified, the cost can be reduced, and the number of inspection steps can be reduced.
[Brief description of the drawings]
FIG. 1 is a diagram showing a schematic configuration of a semiconductor module 10 according to an embodiment.
FIG. 2 is a diagram showing a temperature correlation of IGBT elements 20a-f.
FIG. 3 is a diagram showing a schematic configuration of a conventional semiconductor module 12;
[Explanation of symbols]
10 Semiconductor module, 20a, 20b, 20c, 20d, 20e, 20f IGBT element, 30a, 30b, 30c, 30d, 30e, 30f Temperature detection diode, 40 Temperature detection circuit.

Claims (3)

複数の半導体素子で構成される半導体モジュールにおいて、
前記複数の半導体素子の中で最高温度になる１つの半導体素子の温度を検出する温度検出素子と、
該温度検出素子のみに接続される温度検出回路と、
を備えることを特徴とする半導体モジュール。In a semiconductor module composed of a plurality of semiconductor elements,
A temperature detecting element for detecting a temperature of one semiconductor element that is a maximum temperature among the plurality of semiconductor elements;
A temperature detection circuit connected only to the temperature detection element;
A semiconductor module comprising: 複数の半導体素子で構成される半導体モジュールにおいて、
前記複数の半導体素子の中で最高温度になる半導体素子以外の１つの半導体素子の温度を検出する温度検出素子と、
該温度検出素子のみに接続される温度検出回路と、
最高温度になる半導体素子の温度と、温度検出回路によって検出される半導体素子の温度との間についての相関関係を示す相関データを用いて最高温度となる半導体素子の温度を求めることを特徴とする半導体モジュール。In a semiconductor module composed of a plurality of semiconductor elements,
A temperature detecting element for detecting the temperature of one semiconductor element other than the semiconductor element having the highest temperature among the plurality of semiconductor elements;
A temperature detection circuit connected only to the temperature detection element;
The temperature of the semiconductor element that is the highest temperature is obtained by using correlation data that indicates the correlation between the temperature of the semiconductor element that is the highest temperature and the temperature of the semiconductor element that is detected by the temperature detection circuit. Semiconductor module. 前記温度検出がされる半導体素子は、該半導体素子を取り囲む他の半導体素子の数が最も多いことを特徴とする請求項１に記載の半導体モジュール。Semiconductor element is the temperature detection semiconductor module according to claim 1, the number of other semiconductor elements surrounding the semiconductor element, wherein the largest.
JP2002002283A 2002-01-09 2002-01-09 Semiconductor module Expired - Fee Related JP4032746B2 (en)

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JP3963175B2 (en) 2004-03-19 2007-08-22 日産自動車株式会社 Temperature detection apparatus and temperature detection program
JP3781758B2 (en) 2004-06-04 2006-05-31 株式会社ソニー・コンピュータエンタテインメント Processor, processor system, temperature estimation device, information processing device, and temperature estimation method
JP4692030B2 (en) * 2005-03-10 2011-06-01 日産自動車株式会社 Battery temperature detector
JP4804304B2 (en) * 2006-10-11 2011-11-02 三菱電機株式会社 Semiconductor device
JP4424421B2 (en) 2008-01-17 2010-03-03 トヨタ自動車株式会社 Electric vehicle control device, electric vehicle equipped with the same, electric vehicle control method, and computer-readable recording medium storing a program for causing a computer to execute the control method
JP2016012647A (en) * 2014-06-27 2016-01-21 トヨタ自動車株式会社 Semiconductor device
JP6547664B2 (en) 2016-03-14 2019-07-24 株式会社デンソー Power converter
JP2018057181A (en) * 2016-09-29 2018-04-05 オムロンオートモーティブエレクトロニクス株式会社 Voltage converter
JP6381764B1 (en) * 2017-10-20 2018-08-29 三菱電機株式会社 Semiconductor power module
JP7033049B2 (en) * 2018-11-16 2022-03-09 株式会社 日立パワーデバイス Semiconductor devices and power conversion devices using them

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