CN100336191C - Method for forming semiconductor device intraconnection by copper wire - Google Patents

Method for forming semiconductor device intraconnection by copper wire Download PDF

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Publication number
CN100336191C
CN100336191C CNB2005100333710A CN200510033371A CN100336191C CN 100336191 C CN100336191 C CN 100336191C CN B2005100333710 A CNB2005100333710 A CN B2005100333710A CN 200510033371 A CN200510033371 A CN 200510033371A CN 100336191 C CN100336191 C CN 100336191C
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China
Prior art keywords
welding
semiconductor device
soldering tip
copper cash
microns
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Expired - Fee Related
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CNB2005100333710A
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Chinese (zh)
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CN1665010A (en
Inventor
周少雄
吴泽伟
唐穗生
郭树源
金森荣
罗少锋
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SHANTOU HUASHAN ELECTRONIC DEVICES CO Ltd
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SHANTOU HUASHAN ELECTRONIC DEVICES CO Ltd
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Priority to CNB2005100333710A priority Critical patent/CN100336191C/en
Publication of CN1665010A publication Critical patent/CN1665010A/en
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Publication of CN100336191C publication Critical patent/CN100336191C/en
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  • Engineering & Computer Science (AREA)
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  • Wire Bonding (AREA)

Abstract

The present invention relates to a method for forming an inner guiding wire of a semiconductor device by copper wires, which comprises the following procedures: step 1, protective gas is formed by mixing hydrogen gas and nitrogen gas; step 2, the protective gas is used for filling the welding part of the inner guiding wire of the semiconductor; step 3, a welding head of a raw copper wire is used for orderly welding the copper wires of which the diameters are not smaller than 38 micrometers on the first welding point and the second welding point of the inner guiding wire of the semiconductor to form the inner guiding wire of the semiconductor. The hole diameter H of the upper end of the welding hole of the welding head of a raw copper wire is five to 15 micrometers larger than the diameter phi of the copper wire, the hole diameter CD of the lower end of the welding hole is 20 to 40 micrometers larger than the diameter phi of the copper wire, the welding angle CA of the welding hole is from 110 DEG to 130 DEG, the outer diameter T of the welding head of a raw copper wire is from 223 to 233 micrometers, the round angle radius OR of the bottom edge of the welding head of a raw copper wire is from 45 to 55 micrometers, the included angle FA of the cross section and the bottom surface of the welding head of a raw copper wire is from 4 to 12 DEG, and the range of the volume ratio of the hydrogen gas and the nitrogen gas in the protective gas is from 1: 6 to 1: 10. The present invention increases the electric conductivity, the thermal stability, the pulling resistance and the thermal-conducting property of the inner guiding wire of the semiconductor device, the producing efficiency is high, and the cost is reduced.

Description

Form the method for semiconductor device intraconnection with copper cash
Technical field
The present invention relates to a kind of method that forms semiconductor device intraconnection with copper cash.
Background technology
Lead adopts gold thread ball bonding technology and aluminum steel pressure welding technology usually in the conventional semiconductor device.
Because gold utensil has fabulous ductility, it is easy to be drawn as uniform gold thread, also have gold utensil that lower resistivity and thermal stability are preferably arranged, the very high utmost point of surface inertness is not easy the physical characteristic of oxidation or the like, so it always is the lead material of semiconductor device first-selection.This technology is lower to the specification requirement of lead bonding equipment, and to realizing the lead welding than being easier to, the bonding wire equipment of corresponding this technology also is made into high-speed type easily, and present high speed bonding equipment per hour can weld more than 2.5 ten thousand lines.
But gold thread is not the best conductor of electric conductivity, and thermal stability and heat conductivility neither be best, and the intensity of gold thread is also inadequate, is easy to cause that lead-in wire is impaired when resin-encapsulated.After the gold thread ball bonding on contact-making surface because high temperature, gold atom diffuses into rapidly in the Au/Al chemicals, produces Au 5Al 2The metallographic grown layer has influenced the electrical and thermal conductivity performance of product.
At last, use the main problem of gold thread ball bonding technology just to be the expensive of it.Also we adopt copper cash ball bonding technology to replace the original power of traditional gold thread ball bonding technology just.Because the material cost of copper cash only is about 1/8 of a gold thread.
As for aluminum steel pressure welding technology, the benefit of its maximum just is its lead in realization super large line footpath easily, also has the wire rod cost of aluminum lead also very low.But the subject matter that adopts aluminum lead bond technology technology to exist is: 1, the aluminum steel opering characteristic of electric apparatus of medium and small line warp is relatively poor, and performance is far away from gold thread and copper cash.2, the production efficiency of aluminum steel bonding equipment is very low, and the maximum speed of now the fastest aluminum steel bonding equipment also has only 1/4～1/3 of gold thread bonding equipment.
Summary of the invention
The invention provides a kind of method with copper cash formation semiconductor device intraconnection, the technical scheme of employing is as follows:
Method with copper cash formation semiconductor device intraconnection of the present invention the steps include: the first step, with hydrogen and the composite protection gas of nitrogen; Second step is with the weld of protection gas filling semiconductor device intraconnection; The 3rd step was welded on first solder joint and the second solder joint place of semiconductor device intraconnection with the thick copper lines soldering tip successively with copper cash, the lead of formation semiconductor device.
The schematic diagram of thick copper lines soldering tip is seen Fig. 1.Herein, the aperture, upper end of welding hole is represented with H, the diameter of thick copper lines is represented with φ, the aperture, lower end of welding hole is represented with CD, the welding angle is represented with CA, the external diameter of thick copper lines soldering tip represents that with T the radius of corner on thick copper lines soldering tip base represents that with OR the angle of thick copper lines soldering tip bottom surface and cross section is represented with FA.
Aperture, the upper end H of described thick copper lines soldering tip welding hole is bigger 5～15 microns than the diameter phi of thick copper lines, aperture, the lower end CD of welding hole is bigger 20～40 microns than the diameter phi of thick copper lines, and the welding angle CA of welding hole is 110～130 degree, the external diameter T of thick copper lines soldering tip is 223～233 microns, the radius of corner OR on thick copper lines soldering tip base is 45～55 microns, and the angle FA of thick copper lines soldering tip bottom surface and cross section is 4～12 degree.
Because too conference danger of hydrogen content, hydrogen content is too low not to have protective effect, so the scope of the volume ratio of hydrogen and nitrogen is 1: 6～1: 10 in the described protection gas.Can protect with an airtight welding booth that is full of protection gas, also can adopt protection tracheae butt welding point to carry out localised protection.
Burn the ball quality in order not influence, the gas flow of described protection gas is 1～2 liter of per minute.
In order to reduce the flow velocity of protection gas, described protection gas is carried by two protection tracheaes, and each protects the gas outlet alignment line tail of tracheae to burn ball position, is as the criterion not hinder welding and sparking.Also can adopt more tracheae, further reduce the flow velocity of protection gas, the position of tracheae can be laid according to actual conditions, equally not hinder welding and sparking to be as the criterion.
The aluminium lamination height of the chip surface of described semiconductor device is 3.5～4.5 microns.
The thick copper lines soldering tip carries out preheating before welding temperature is 210～230 degree, and the temperature of main heat is 220～240 degree, and the bonding power of main heat is 30～140 milliwatts, and welding pressure is 30～140 grams, and the time of welding is 20～60 milliseconds.
The applicant manufactures experimently with copper cash, achieves success very soon on the production technology of fine copper wire (φ＜38 micron).But, on thick copper lines (φ 〉=38 micron) welding procedure, but run into very big problem, mainly show the following aspects:
1, oxidative phenomena.Because copper cash is the active relatively material of a kind of physical characteristic, in art production process, need under high temperature (200 degree～250 degree),, show as lead-in wire and redden or purpling again so oxidative phenomena can occur in the production process.
2, insufficient strength.The product lead strain intensity of producing does not reach requirement.
The line footpath 38 microns copper cash 43 microns copper cash 50 microns copper cash
The pulling force requirement 〉=15 grams 〉=25 grams 〉=50 grams
3, the weldering of chip welding position is hindered.The product that has welded line finds that chip surface has damage after soaking chemical treatment in 20 minutes by 20% concentration NaOH solution.
4, leg breaks away from.Lead and framework not prison welding and produce disengaging.
At the problems referred to above, this patent proposes a series of schemes, efficiently solves the problems referred to above.Its main contents have following several aspect:
1, adopt mist (hydrogen and nitrogen) to burn the protection gas of ball as sparking.Because it is that high pressure sparks and burns thread ball in lead terminal that ball is burnt in sparking, there is moment high temperature, if do not do protection, will lead-in wire and soldered ball oxidation.Through experimental results show that repeatedly:
1) scope of the volume ratio of hydrogen and nitrogen is between 1: 6～1: 10.Too conference danger of hydrogen content, hydrogen content is too low not to have protective effect.
2) must use two protection tracheaes, to reduce the gas flow rate of welding and sparking position, gas tube orifice alignment line tail burns ball position, is as the criterion not hinder welding and sparking.
3) gas flow of total mist is best 1～2 liter of per minute.Too big or too little all can the influence burnt the ball quality.
2, design thick copper lines soldering tip.The thick copper lines soldering tip is as the person that directly do not finish of wire bonds, and its overall dimension parameter all has different meanings, and different numerical value plays a crucial role to the quality of welding.We find in the new process development process, and the effect of different soldering tip bonding wires is different fully.Be the overall dimension (Fig. 1) of thick copper lines soldering tip below.
A) angle of CA directly influences the profile and the quality of copper cash soldered ball.
Produce product under the same conditions by the soldering tip of different angles customized and do repeatedly comparison, draw following conclusion:
The size of CA angle is between 110～130 degree, and preferably 120 spend, and its benefit mainly contains: be not easy weldering and hinder chip, because effective contact area of soldered ball strengthens, pressure reduces relatively.Can reduce the parameter of welding, the life-span of soldering tip prolongs relatively.In addition, bigger contact-making surface can reduce current density, reduces the generation of heat.
B) T, OR are to the influence of second solder joint
As can be seen from Figure 2, the major parameter that influences second solder joint is T and OR.Second quality played a decisive role when the T of different parameters, OR welded copper cash.
After parameter change, the contact area of second solder joint is changed.
So far, through last definite following thick copper lines soldering tip parameter:
Figure C20051003337100061
3, determine process conditions.
The temperature of preheating is 210～230 degree, and the temperature of main heat is 220～240 degree, and the bonding power of main heat is 30～140 milliwatts, and welding pressure is 30～140 grams, and the time of welding is 20～60 milliseconds.
Above parameter is the preferred process condition that we grope out, can carry out production work under the situation preferably in the material consistency.
4, determine chip aluminium lamination height.Require chip producer on chip welding position surface aluminium lamination to be thickeied, general chip aluminium lamination height is 2.5～3.5 microns, should increase to 3.5～5.5 microns.
By adopting top measure, thick copper lines ball bonding technology is perfect substantially, reaches the degree that can produce.
The present invention's beneficial effect against existing technologies is, make semiconductor device intraconnection owing to adopt thick copper lines, therefore improved electric conductivity, thermal stability, tensile strength and the heat conductivility of semiconductor device intraconnection, the production efficiency height, and greatly reduce cost.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention 1 thick copper lines soldering tip;
Fig. 2 is the view of second solder joint of 1 thick copper lines soldering tip welding semiconductor device intraconnection embodiment illustrated in fig. 1.
Embodiment
Embodiment 1
As shown in Figure 1, 2, the method in the present embodiment with copper cash formation semiconductor device intraconnection, the first step is with hydrogen and the composite protection gas of nitrogen; Second step is with the weld of protection gas filling semiconductor device intraconnection; The 3rd step was welded on first solder joint and the second solder joint place of semiconductor device intraconnection with thick copper lines soldering tip 1 successively with copper cash 2, the lead of formation semiconductor device.
The volume ratio of described hydrogen and nitrogen is 1: 6.
The diameter of described copper cash 2 is 38 microns.
The schematic diagram of thick copper lines soldering tip 1 is seen Fig. 1, wherein, the aperture, upper end of welding hole 3 is represented with H, the diameter of copper cash 2 is represented with φ, the aperture, lower end of welding hole 3 represents that with CD the welding angle represents that with CA the external diameter of thick copper lines soldering tip 1 is represented with T, the radius of corner on thick copper lines soldering tip 1 base represents that with OR the angle of thick copper lines soldering tip 1 bottom surface and cross section is represented with FA.
Aperture, the upper end H of described thick copper lines soldering tip welding hole is bigger 5 microns than the diameter phi of thick copper lines, aperture, the lower end CD of welding hole is bigger 20 microns than the diameter phi of copper cash 2, and the welding angle CA of welding hole is 110 degree, the external diameter T of thick copper lines soldering tip is 223 microns, the radius of corner OR on thick copper lines soldering tip base is 45 microns, and the angle FA of thick copper lines soldering tip bottom surface and cross section is 4 degree.
Thick copper lines soldering tip 1 carries out preheating before welding temperature is 210 degree, and the temperature of master's heat is 220 degree during welding, and bonding power is 30 milliwatts, and welding pressure is 30 grams, and the time of welding is 20 milliseconds.
The aluminium lamination height of the chip surface of described semiconductor device 4 is 3.5 microns.
The gas flow of described protection gas is 1 liter of per minute.
Described protection gas is carried by two protection tracheaes, and each protects the gas outlet alignment line tail of tracheae to burn ball position, is as the criterion not hinder welding and sparking.
Embodiment 2
Method and 1 of embodiment with copper cash formation semiconductor device intraconnection in the present embodiment have difference on parameter, the first step is with hydrogen and the composite protection gas of nitrogen; Second step is with the weld of protection gas filling semiconductor device intraconnection; The 3rd step was welded on first solder joint and the second solder joint place of semiconductor device intraconnection with thick copper lines soldering tip 1 successively with copper cash 2, the lead of formation semiconductor device.
The volume ratio of described hydrogen and nitrogen is 1: 10.
The diameter of described copper cash 2 is 50 microns.
Aperture, the upper end H of described thick copper lines soldering tip 1 welding hole 3 is bigger 15 microns than the diameter phi of copper cash 2, aperture, the lower end CD of welding hole 3 is bigger 40 microns than the diameter phi of copper cash 2, and the welding angle CA of welding hole 3 is 130 degree, the external diameter T of thick copper lines soldering tip 1 is 233 microns, the radius of corner OR on thick copper lines soldering tip 1 base is 55 microns, and the angle FA of thick copper lines soldering tip 1 bottom surface and cross section is 12 degree.
Thick copper lines soldering tip 1 carries out preheating before welding temperature is 230 degree, and the temperature of master's heat is 240 degree during welding, and bonding power is 140 milliwatts, and welding pressure is 140 grams, and the time of welding is 60 milliseconds.
The aluminium lamination height of the chip surface of described semiconductor device 4 is 4.5 microns.
The gas flow of described protection gas is 2 liters of per minutes.
Described protection gas is carried by two protection tracheaes, and each protects the gas outlet alignment line tail of tracheae to burn ball position, is as the criterion not hinder welding and sparking.
Embodiment 3
Method and 1 of embodiment with copper cash formation semiconductor device intraconnection in the present embodiment have difference on parameter, the first step is with hydrogen and the composite protection gas of nitrogen; Second step is with the weld of protection gas filling semiconductor device intraconnection; The 3rd step was welded on first solder joint and the second solder joint place of semiconductor device intraconnection with thick copper lines soldering tip 1 successively with copper cash 2, the lead of formation semiconductor device.
The volume ratio of described hydrogen and nitrogen is 1: 8.
The diameter of described copper cash 2 is 43 microns.
Aperture, the upper end H of described thick copper lines soldering tip welding hole 3 is bigger 10 microns than the diameter phi of copper cash 2, aperture, the lower end CD of welding hole 3 is bigger 30 microns than the diameter phi of copper cash 2, and the welding angle CA of welding hole 3 is 120 degree, the external diameter T of thick copper lines soldering tip 1 is 228 microns, the radius of corner OR on thick copper lines soldering tip 1 base is 50 microns, and the angle FA of thick copper lines soldering tip 1 bottom surface and cross section is 8 degree.
Thick copper lines soldering tip 1 carries out preheating before welding temperature is 220 degree, and the temperature of master's heat is 230 degree during welding, and bonding power is 70 milliwatts, and welding pressure is 80 grams, and the time of welding is 30 milliseconds.
The aluminium lamination height of the chip surface of described semiconductor device 4 is 4 microns.
The gas flow of described protection gas is 1.5 liters of per minutes.
Described protection gas is carried by two protection tracheaes, and each protects the gas outlet alignment line tail of tracheae to burn ball position, is as the criterion not hinder welding and sparking.
The above only is several preferred embodiment of the present invention, is not to be used for limiting practical range of the present utility model; Be all equivalents of being done according to claim scope of the present invention, be claim scope of the present invention and cover.

Claims (6)

1, a kind of method with copper cash formation semiconductor device intraconnection the steps include: the first step, with hydrogen and the composite protection gas of nitrogen; Second step is with the weld of protection gas filling semiconductor device intraconnection; In the 3rd step, the copper cash (2) of diameter 〉=38 micron is welded on first solder joint and the second solder joint place of semiconductor device intraconnection, the lead of formation semiconductor device successively with thick copper lines soldering tip (1); The aperture, upper end (H) of the welding hole (3) of described thick copper lines soldering tip (1) is bigger 5～15 microns than the diameter (φ) of copper cash (2), the aperture, lower end (CD) of welding hole (3) is bigger 20～40 microns than the diameter (φ) of copper cash (2), and the welding angle (CA) of welding hole (3) is 110～130 degree, the external diameter (T) of thick copper lines soldering tip (1) is 223～233 microns, the radius of corner (OR) on thick copper lines soldering tip (1) base is 45～55 microns, and the angle (FA) of thick copper lines soldering tip (1) bottom surface and cross section is 4～12 degree.
2, the method with copper cash formation semiconductor device intraconnection as claimed in claim 1, it is characterized in that: the scope of the volume ratio of hydrogen and nitrogen is 1: 6～1: 10 in the described protection gas.
3, the method with copper cash formation semiconductor device intraconnection as claimed in claim 2, it is characterized in that: the gas flow of described protection gas is 1～2 liter of per minute.
4, the method with copper cash formation semiconductor device intraconnection as claimed in claim 3 is characterized in that: described protection gas is carried by two protection tracheaes, and each protects the gas outlet alignment line tail of tracheae to burn ball position, is as the criterion not hinder welding and sparking.
5, the method with copper cash formation semiconductor device intraconnection as claimed in claim 1, it is characterized in that: the aluminium lamination height of the chip surface of described semiconductor device (4) is 3.5～4.5 microns.
6, the method that forms semiconductor device intraconnection with copper cash as claimed in claim 1, it is characterized in that: thick copper lines soldering tip (1) carries out preheating before welding temperature is 210～230 degree, the temperature of main heat is 220～240 degree, the bonding power of main heat is 30～140 milliwatts, welding pressure is 30～140 grams, and the time of welding is 20～60 milliseconds.
CNB2005100333710A 2005-03-04 2005-03-04 Method for forming semiconductor device intraconnection by copper wire Expired - Fee Related CN100336191C (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607137A (en) * 1983-06-27 1985-01-14 Shinkawa Ltd Device for forming ball for wire bonder
JPS60167340A (en) * 1984-02-09 1985-08-30 Mitsubishi Electric Corp Inspection for junction condition of stitch bonding part
JPS61119053A (en) * 1984-11-15 1986-06-06 Toshiba Corp Wire-bonding method
CN85106110A (en) * 1984-10-19 1986-10-01 株式会社东芝 The device that is used for producing the semiconductor devices
JPH02163951A (en) * 1988-12-16 1990-06-25 Sanyo Electric Co Ltd Capillary tip and wire bonding of semiconductor device
JPH05326650A (en) * 1992-05-19 1993-12-10 Mitsubishi Electric Corp Fabrication of semiconductor device
US6581816B2 (en) * 2000-04-11 2003-06-24 Stmicroelectronics S.R.L. Capillary for bonding copper wires between a semiconductor circuit chip and a corresponding terminal connector of a semiconductor device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607137A (en) * 1983-06-27 1985-01-14 Shinkawa Ltd Device for forming ball for wire bonder
JPS60167340A (en) * 1984-02-09 1985-08-30 Mitsubishi Electric Corp Inspection for junction condition of stitch bonding part
CN85106110A (en) * 1984-10-19 1986-10-01 株式会社东芝 The device that is used for producing the semiconductor devices
JPS61119053A (en) * 1984-11-15 1986-06-06 Toshiba Corp Wire-bonding method
JPH02163951A (en) * 1988-12-16 1990-06-25 Sanyo Electric Co Ltd Capillary tip and wire bonding of semiconductor device
JPH05326650A (en) * 1992-05-19 1993-12-10 Mitsubishi Electric Corp Fabrication of semiconductor device
US6581816B2 (en) * 2000-04-11 2003-06-24 Stmicroelectronics S.R.L. Capillary for bonding copper wires between a semiconductor circuit chip and a corresponding terminal connector of a semiconductor device

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