CL2019003780A1 - Estructura de sensor de imagen. - Google Patents

Estructura de sensor de imagen.

Info

Publication number
CL2019003780A1
CL2019003780A1 CL2019003780A CL2019003780A CL2019003780A1 CL 2019003780 A1 CL2019003780 A1 CL 2019003780A1 CL 2019003780 A CL2019003780 A CL 2019003780A CL 2019003780 A CL2019003780 A CL 2019003780A CL 2019003780 A1 CL2019003780 A1 CL 2019003780A1
Authority
CL
Chile
Prior art keywords
stack
light
matrix
passivation stack
passivation
Prior art date
Application number
CL2019003780A
Other languages
English (en)
Inventor
Xiuyu Cai
Ali Agah
Tracy H Fung
Dietrich Dehlinger
Original Assignee
Illumina Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Illumina Inc filed Critical Illumina Inc
Publication of CL2019003780A1 publication Critical patent/CL2019003780A1/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0204—Compact construction
    • G01J1/0209—Monolithic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0214—Constructional arrangements for removing stray light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G01N21/03—Cuvette constructions
    • G01N21/05—Flow-through cuvettes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N21/6452—Individual samples arranged in a regular 2D-array, e.g. multiwell plates
    • G01N21/6454—Individual samples arranged in a regular 2D-array, e.g. multiwell plates using an integrated detector array
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14629—Reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/064—Stray light conditioning
    • G01N2201/0642—Light traps; baffles

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Molecular Biology (AREA)
  • Biomedical Technology (AREA)
  • Hematology (AREA)
  • Urology & Nephrology (AREA)
  • Microbiology (AREA)
  • Cell Biology (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Food Science & Technology (AREA)
  • Biotechnology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Facsimile Heads (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
  • Glass Compositions (AREA)

Abstract

UN EJEMPLO DE ESTRUCTURA DE SENSOR DE IMAGEN INCLUYE UNA CAPA DE IMAGEN. LA CAPA DE IMAGEN INCLUYE UNA MATRIZ DE DETECTORES DE LUZ DISPUESTA EN SU INTERIOR. SOBRE LA CAPA DE IMAGEN HAY DISPUESTA UNA PILA DE DISPOSITIVOS. HAY UNA MATRIZ DE GUÍAS DE LUZ DISPUESTA EN LA PILA DE DISPOSITIVOS. CADA GUÍA DE LUZ ESTÁ ASOCIADA CON AL MENOS UN DETECTOR DE LUZ DE LA MATRIZ DE DETECTORES DE LUZ. SOBRE LA PILA DE DISPOSITIVOS HAY DISPUESTA UNA PILA DE PASIVACIÓN. LA PILA DE PASIVACIÓN INCLUYE UNA SUPERFICIE INFERIOR EN CONTACTO DIRECTO CON UNA SUPERFICIE SUPERIOR DE LAS GUÍAS DE LUZ. HAY DISPUESTA UNA MATRIZ DE NANOPOCILLOS EN UNA CAPA SUPERIOR DE LA PILA DE PASIVACIÓN. CADA NANOPOCILLO ESTÁ ASOCIADO CON UNA GUÍA DE LUZ DE LA MATRIZ DE GUÍAS DE LUZ. EN LA PILA DE PASIVACIÓN HAY DISPUESTA UNA ESTRUCTURA METÁLICA DE BLOQUEO DE LA DIAFONÍA. LA ESTRUCTURA METÁLICA DE BLOQUEO DE LA DIAFONÍA REDUCE LA DIAFONÍA DENTRO DE LA PILA DE PASIVACIÓN.
CL2019003780A 2017-12-26 2019-12-20 Estructura de sensor de imagen. CL2019003780A1 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762610354P 2017-12-26 2017-12-26
NL2020615A NL2020615B1 (en) 2017-12-26 2018-03-19 Image sensor structure

Publications (1)

Publication Number Publication Date
CL2019003780A1 true CL2019003780A1 (es) 2020-07-10

Family

ID=64650329

Family Applications (1)

Application Number Title Priority Date Filing Date
CL2019003780A CL2019003780A1 (es) 2017-12-26 2019-12-20 Estructura de sensor de imagen.

Country Status (23)

Country Link
US (3) US10879296B2 (es)
EP (2) EP3505914B1 (es)
JP (1) JP7068356B2 (es)
KR (2) KR20200023286A (es)
CN (2) CN209150117U (es)
AU (2) AU2018397303B2 (es)
CA (1) CA3066714C (es)
CL (1) CL2019003780A1 (es)
CO (1) CO2019014438A2 (es)
CR (1) CR20190586A (es)
DK (1) DK3505914T3 (es)
ES (1) ES2914304T3 (es)
IL (1) IL271227B2 (es)
MX (1) MX2019015846A (es)
NL (1) NL2020615B1 (es)
PE (1) PE20201070A1 (es)
PH (1) PH12019502902A1 (es)
RU (1) RU2744399C1 (es)
SA (1) SA519410860B1 (es)
SG (1) SG11201911653UA (es)
TW (2) TWI738344B (es)
WO (1) WO2019133105A1 (es)
ZA (2) ZA201908211B (es)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8906320B1 (en) 2012-04-16 2014-12-09 Illumina, Inc. Biosensors for biological or chemical analysis and systems and methods for same
NL2020625B1 (en) * 2017-12-22 2019-07-02 Illumina Inc Two-filter light detection devices and methods of manufacturing same
NL2020615B1 (en) 2017-12-26 2019-07-02 Illumina Inc Image sensor structure
MY194772A (en) * 2017-12-26 2022-12-15 Illumina Inc Sensor System
IL279384B2 (en) * 2018-09-14 2024-10-01 Illumina Inc Flow cells and related methods
US12100723B2 (en) 2019-10-09 2024-09-24 Illumina Inc. Image sensor structure with a light guide layer and a nanowell layer
US11105745B2 (en) * 2019-10-10 2021-08-31 Visera Technologies Company Limited Biosensor
TWI725765B (zh) * 2020-03-10 2021-04-21 力晶積成電子製造股份有限公司 具有表面微柱體結構的固態影像感測器暨其製作方法
EP3991211A4 (en) * 2020-03-20 2022-07-20 GeneSense Technology Inc. HIGH-THROUGHPUT ANALYSIS SYSTEM FOR THE DETERMINATION AND DETECTION OF MOLECULES
TWI751893B (zh) * 2021-01-21 2022-01-01 晶相光電股份有限公司 影像感測裝置
US20220238733A1 (en) * 2021-01-28 2022-07-28 Texas Instruments Incorporated Sensor packages with wavelength-specific light filters
TWI773355B (zh) * 2021-06-02 2022-08-01 晶相光電股份有限公司 影像感測器及其製造方法
WO2023201196A2 (en) * 2022-04-13 2023-10-19 Illumina, Inc. Sensor with light filter and crosstalk reduction medium
CN117250343A (zh) * 2022-06-10 2023-12-19 广州印芯半导体技术有限公司 载体均匀地分散的生物检测装置
CN116884984B (zh) * 2023-09-04 2023-12-29 合肥海图微电子有限公司 一种图像传感器及其制作方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5846708A (en) 1991-11-19 1998-12-08 Massachusetts Institiute Of Technology Optical and electrical methods and apparatus for molecule detection
FR2906079B1 (fr) * 2006-09-19 2009-02-20 E2V Semiconductors Soc Par Act Capteur d'image en couleur a colorimetrie amelioree
KR20090037004A (ko) * 2007-10-11 2009-04-15 주식회사 동부하이텍 이미지센서 및 그 제조방법
US8319301B2 (en) * 2008-02-11 2012-11-27 Omnivision Technologies, Inc. Self-aligned filter for an image sensor
EP3943920B1 (en) * 2010-02-19 2024-04-03 Pacific Biosciences Of California, Inc. Integrated analytical system and method for fluorescence measurement
RU105744U1 (ru) * 2010-06-11 2011-06-20 Федеральное государственное учреждение науки "Санкт-Петербургский научно-исследовательский институт эпидемиологии и микробиологии имени Пастера" Федеральной службы по надзору в сфере защиты прав потребителей и благополучия человека Устройство для микробиологических исследований
US20120156100A1 (en) * 2010-12-20 2012-06-21 Industrial Technology Research Institute Apparatus for single molecule detection and method thereof
US9373732B2 (en) 2012-02-07 2016-06-21 Semiconductor Components Industries, Llc Image sensors with reflective optical cavity pixels
US8906320B1 (en) * 2012-04-16 2014-12-09 Illumina, Inc. Biosensors for biological or chemical analysis and systems and methods for same
US8941204B2 (en) * 2012-04-27 2015-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for reducing cross talk in image sensors
US9372308B1 (en) * 2012-06-17 2016-06-21 Pacific Biosciences Of California, Inc. Arrays of integrated analytical devices and methods for production
US8530266B1 (en) * 2012-07-18 2013-09-10 Omnivision Technologies, Inc. Image sensor having metal grid with a triangular cross-section
JP6053382B2 (ja) 2012-08-07 2016-12-27 キヤノン株式会社 撮像装置、撮像システム、および撮像装置の製造方法。
US9478574B2 (en) * 2012-09-19 2016-10-25 Semiconductor Components Industries, Llc Image sensor pixels with light guides and light shield structures
US9356060B2 (en) * 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor device and method
US9683937B2 (en) * 2013-08-23 2017-06-20 Semiconductor Components Industries, Llc Imaging devices for molecule detection
CA3133543C (en) * 2013-12-10 2023-05-02 Illumina, Inc. Biosensors for biological or chemical analysis and methods of manufacturing the same
US10191213B2 (en) * 2014-01-09 2019-01-29 Globalfoundries Inc. Shielding structures between optical waveguides
US9130072B1 (en) * 2014-04-15 2015-09-08 Taiwan Semiconductor Manufacturing Company Ltd. Backside illuminated image sensor and method of manufacturing the same
KR20220165282A (ko) * 2014-08-08 2022-12-14 퀀텀-에스아이 인코포레이티드 분자들을 프로빙, 검출 및 분석하기 위한 광학계 및 검정 칩
US9825078B2 (en) * 2014-11-13 2017-11-21 Visera Technologies Company Limited Camera device having an image sensor comprising a conductive layer and a reflection layer stacked together to form a light pipe structure accommodating a filter unit
TWI571626B (zh) * 2015-07-15 2017-02-21 力晶科技股份有限公司 具有奈米腔的集成生物感測器及其製作方法
US9739938B2 (en) * 2015-12-09 2017-08-22 Elenion Technologies, Llc Shielded photonic integrated circuit
NL2020615B1 (en) * 2017-12-26 2019-07-02 Illumina Inc Image sensor structure

Also Published As

Publication number Publication date
RU2744399C1 (ru) 2021-03-09
SA519410860B1 (ar) 2022-08-17
CO2019014438A2 (es) 2020-04-01
NL2020615B1 (en) 2019-07-02
ZA202107199B (en) 2024-01-31
TW201937714A (zh) 2019-09-16
CN209150117U (zh) 2019-07-23
KR20200023286A (ko) 2020-03-04
US11610928B2 (en) 2023-03-21
US10879296B2 (en) 2020-12-29
DK3505914T3 (da) 2022-05-23
CA3066714A1 (en) 2019-07-04
AU2021203485A1 (en) 2021-07-01
CN109962079A (zh) 2019-07-02
US20230207601A1 (en) 2023-06-29
IL271227B (en) 2022-11-01
PH12019502902A1 (en) 2020-10-12
EP3505914B1 (en) 2022-04-20
KR20220009422A (ko) 2022-01-24
ES2914304T3 (es) 2022-06-09
AU2018397303B2 (en) 2021-05-20
BR112019027632A2 (pt) 2020-07-07
EP3505914A1 (en) 2019-07-03
SG11201911653UA (en) 2020-01-30
CR20190586A (es) 2020-03-17
TW202040808A (zh) 2020-11-01
PE20201070A1 (es) 2020-10-20
JP7068356B2 (ja) 2022-05-16
IL271227B2 (en) 2023-03-01
EP4050327A1 (en) 2022-08-31
IL271227A (en) 2020-01-30
JP2020533782A (ja) 2020-11-19
TWI697114B (zh) 2020-06-21
MX2019015846A (es) 2020-08-03
KR102521299B1 (ko) 2023-04-13
ZA201908211B (en) 2022-03-30
CA3066714C (en) 2023-07-04
WO2019133105A1 (en) 2019-07-04
NZ759861A (en) 2021-11-26
TWI738344B (zh) 2021-09-01
US20190198553A1 (en) 2019-06-27
AU2018397303A1 (en) 2020-01-02
US12087797B2 (en) 2024-09-10
US20210098521A1 (en) 2021-04-01
AU2021203485B2 (en) 2023-02-23

Similar Documents

Publication Publication Date Title
CL2019003780A1 (es) Estructura de sensor de imagen.
CO2019014448A2 (es) Sistema sensor
MX2017002981A (es) Pixel de resolucion variable.
JP2015188049A5 (es)
SE1751613A1 (en) Biometric imaging device and method for manufacturing the biometric imaging device
CL2016001389A1 (es) Un biosensor para el análisis químico o biológico y método de fabricación.
EP3340306A3 (en) Physical layout and structure of rgbz pixel cell unit for rgbz image sensor
GB2548185A (en) RGBZ pixel unit cell with first and second z transfer gates
JP2015162646A5 (es)
EP3435416A3 (en) Imaging device
EP2806457A3 (fr) Dispositif à matrice de diodes à stabilite ameliorée
WO2009041434A1 (ja) 固体撮像装置
EP3304599A4 (en) ORGANIC PHOTOELECTRIC CONVERSION ELEMENT, OPTICAL SURFACE SENSOR, IMAGING DEVICE AND IMAGING APPARATUS
JP2016535428A5 (es)
EP2782136A3 (en) Solid state imaging device and portable information terminal
EP3582275A4 (en) PHOTOELECTRIC CONVERSION ELEMENT, USER OPTICAL ZONE SENSOR, IMAGING ELEMENT AND IMAGING DEVICE
TW201613435A (en) Display device and fabricating method thereof
EP2639838A3 (en) Photosensing transistor for optical touch screen device and method of manufacturing the photosensing transistor
JP2016018963A5 (es)
PE20110198A1 (es) Filtro de banda horizontal con alineacion de criba vacia
TW201614817A (en) Image sensor with deep well structure and fabrication method thereof
EP2790222A3 (en) Image sensor having metal contact coupled through a contact etch stop layer with an isolation region
ES2664445T3 (es) Dispositivo para la limpieza sin contacto de rodillos y procedimiento para ello
CR20200001A (es) Estructura y método para utilizar la superficie activa de un sensor
JP2016115815A5 (es)