CL2009000245A1 - Compuestos derivados de heterociclil piridinilo, con actividad moduladora del receptor 5-ht6; composicion farmaceutica que los comprende y su uso para tratar la esquizofrenia, ansiedad, migrana, depresion, entre otros. - Google Patents

Compuestos derivados de heterociclil piridinilo, con actividad moduladora del receptor 5-ht6; composicion farmaceutica que los comprende y su uso para tratar la esquizofrenia, ansiedad, migrana, depresion, entre otros.

Info

Publication number
CL2009000245A1
CL2009000245A1 CL2009000245A CL2009000245A CL2009000245A1 CL 2009000245 A1 CL2009000245 A1 CL 2009000245A1 CL 2009000245 A CL2009000245 A CL 2009000245A CL 2009000245 A CL2009000245 A CL 2009000245A CL 2009000245 A1 CL2009000245 A1 CL 2009000245A1
Authority
CL
Chile
Prior art keywords
heterocyclyl
migraine
pyridinyl
anxiety
depression
Prior art date
Application number
CL2009000245A
Other languages
English (en)
Inventor
Elizabeth Martha Schwarz Jacob Bradley Collantes
Original Assignee
Pfizer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pfizer filed Critical Pfizer
Publication of CL2009000245A1 publication Critical patent/CL2009000245A1/es

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D401/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom
    • C07D401/02—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings
    • C07D401/06—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings linked by a carbon chain containing only aliphatic carbon atoms
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61P—SPECIFIC THERAPEUTIC ACTIVITY OF CHEMICAL COMPOUNDS OR MEDICINAL PREPARATIONS
    • A61P25/00—Drugs for disorders of the nervous system
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61P—SPECIFIC THERAPEUTIC ACTIVITY OF CHEMICAL COMPOUNDS OR MEDICINAL PREPARATIONS
    • A61P25/00—Drugs for disorders of the nervous system
    • A61P25/18—Antipsychotics, i.e. neuroleptics; Drugs for mania or schizophrenia
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D213/00—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members
    • C07D213/02—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members
    • C07D213/04—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom
    • C07D213/60—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D213/78—Carbon atoms having three bonds to hetero atoms, with at the most one bond to halogen, e.g. ester or nitrile radicals
    • C07D213/81—Amides; Imides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D401/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom
    • C07D401/02—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings
    • C07D401/12—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings linked by a chain containing hetero atoms as chain links
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D401/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom
    • C07D401/14—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing three or more hetero rings
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/74—Array wherein each memory cell has more than one access device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/78—Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay

Abstract

Compuestos derivados de heterociclil piridina, composiciones farmacéuticas que los contienen y su uso para tratar esquizofrenia.
CL2009000245A 2008-02-05 2009-02-04 Compuestos derivados de heterociclil piridinilo, con actividad moduladora del receptor 5-ht6; composicion farmaceutica que los comprende y su uso para tratar la esquizofrenia, ansiedad, migrana, depresion, entre otros. CL2009000245A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2619508P 2008-02-05 2008-02-05

Publications (1)

Publication Number Publication Date
CL2009000245A1 true CL2009000245A1 (es) 2009-06-05

Family

ID=40680365

Family Applications (1)

Application Number Title Priority Date Filing Date
CL2009000245A CL2009000245A1 (es) 2008-02-05 2009-02-04 Compuestos derivados de heterociclil piridinilo, con actividad moduladora del receptor 5-ht6; composicion farmaceutica que los comprende y su uso para tratar la esquizofrenia, ansiedad, migrana, depresion, entre otros.

Country Status (11)

Country Link
US (1) US20090197859A1 (es)
EP (1) EP2265600A1 (es)
JP (1) JP2011511056A (es)
AR (1) AR070343A1 (es)
CA (1) CA2714232A1 (es)
CL (1) CL2009000245A1 (es)
PA (1) PA8815001A1 (es)
PE (1) PE20091379A1 (es)
TW (1) TW200938532A (es)
UY (1) UY31632A1 (es)
WO (1) WO2009098576A1 (es)

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UA103319C2 (en) 2008-05-06 2013-10-10 Глаксосмитклайн Ллк Thiazole- and oxazole-benzene sulfonamide compounds
CA2739916A1 (en) * 2008-10-21 2010-04-29 Merck Sharp & Dohme Corp. 2,5-disubstituted piperidine orexin receptor antagonists
AR076766A1 (es) 2009-05-14 2011-07-06 Japan Tobacco Inc Compuestos de azetidina, composiciones farmaceuticas y su uso en el tratamiento de enfermedades autoinmunes.
UA107938C2 (en) * 2009-08-12 2015-03-10 Syngenta Participations Ag Heterocycles with microbicidal properties
JO3250B1 (ar) 2009-09-22 2018-09-16 Novartis Ag إستعمال منشطات مستقبل نيكوتينيك أسيتيل كولين ألفا 7
WO2011058766A1 (en) * 2009-11-16 2011-05-19 Raqualia Pharma Inc. Aryl carboxamide derivatives as ttx-s blockers
KR20110123657A (ko) 2010-05-07 2011-11-15 에스케이케미칼주식회사 피콜린아마이드 및 피리미딘-4-카복사미드 화합물, 이의 제조방법 및 이를 함유하는 약제학적 조성물
JP2013528169A (ja) * 2010-05-27 2013-07-08 バイエル・クロップサイエンス・アーゲー 殺菌剤としてのピリジニルカルボン酸誘導体
EP2632253B1 (en) 2010-10-29 2016-04-06 Merck Sharp & Dohme Corp. Process for the preparation of an orexin receptor antagonist
KR20150070348A (ko) 2012-10-16 2015-06-24 얀센 파마슈티카 엔.브이. RoRγt의 헤테로아릴 결합 퀴놀리닐 조절제
WO2014062667A1 (en) 2012-10-16 2014-04-24 Janssen Pharmaceutica Nv Phenyl linked quinolinyl modulators of ror-gamma-t
PE20150778A1 (es) 2012-10-16 2015-05-23 Janssen Pharmaceutica Nv Moduladores de quinolinilo unidos a metileno de ror-gamma-t
JP6440625B2 (ja) 2012-11-14 2018-12-19 ザ・ジョンズ・ホプキンス・ユニバーシティー 精神分裂病を処置するための方法および組成物
BR112015019208A2 (pt) * 2013-02-14 2017-07-18 Galderma Res & Dev processo de síntese
EP2958912A1 (en) * 2013-02-21 2015-12-30 Selvita S.A. Pyridine derivatives as 5-ht6 receptor antagonists
WO2014176142A1 (en) * 2013-04-23 2014-10-30 Merck Sharp & Dohme Corp. Hydroxy-substituted orexin receptor antagonists
GB201314286D0 (en) 2013-08-08 2013-09-25 Takeda Pharmaceutical Therapeutic Compounds
AU2014334619A1 (en) 2013-10-15 2016-04-21 Janssen Pharmaceutica Nv Alkyl linked quinolinyl modulators of RORyt
US9403816B2 (en) 2013-10-15 2016-08-02 Janssen Pharmaceutica Nv Phenyl linked quinolinyl modulators of RORγt
US9328095B2 (en) 2013-10-15 2016-05-03 Janssen Pharmaceutica Nv Heteroaryl linked quinolinyl modulators of RORgammat
US10555941B2 (en) 2013-10-15 2020-02-11 Janssen Pharmaceutica Nv Alkyl linked quinolinyl modulators of RORγt
US9284308B2 (en) 2013-10-15 2016-03-15 Janssen Pharmaceutica Nv Methylene linked quinolinyl modulators of RORγt
US9221804B2 (en) 2013-10-15 2015-12-29 Janssen Pharmaceutica Nv Secondary alcohol quinolinyl modulators of RORγt
ES2742843T3 (es) 2013-10-15 2020-02-17 Janssen Pharmaceutica Nv Moduladores de quinolinilo de ROR(gamma)t
TW201811766A (zh) 2016-08-29 2018-04-01 瑞士商諾華公司 N-(吡啶-2-基)吡啶-磺醯胺衍生物及其用於疾病治療之用途
CN109721530A (zh) * 2017-10-31 2019-05-07 成都博腾药业有限公司 一种制备6-氟-2-吡啶磺酰氯的方法
WO2021019051A1 (en) 2019-07-30 2021-02-04 Karl-Franzens-Universität Graz Inhibitors of human atgl

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Also Published As

Publication number Publication date
WO2009098576A1 (en) 2009-08-13
PE20091379A1 (es) 2009-09-18
AR070343A1 (es) 2010-03-31
US20090197859A1 (en) 2009-08-06
EP2265600A1 (en) 2010-12-29
JP2011511056A (ja) 2011-04-07
TW200938532A (en) 2009-09-16
PA8815001A1 (es) 2009-09-17
CA2714232A1 (en) 2009-08-13
UY31632A1 (es) 2009-09-30

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