CH629335A5 - Semiconductor device with protective coating layer and process for producing said device - Google Patents

Semiconductor device with protective coating layer and process for producing said device Download PDF

Info

Publication number
CH629335A5
CH629335A5 CH95177A CH95177A CH629335A5 CH 629335 A5 CH629335 A5 CH 629335A5 CH 95177 A CH95177 A CH 95177A CH 95177 A CH95177 A CH 95177A CH 629335 A5 CH629335 A5 CH 629335A5
Authority
CH
Switzerland
Prior art keywords
semiconductor element
coating material
protective coating
organic
silicon
Prior art date
Application number
CH95177A
Other languages
German (de)
English (en)
Inventor
Abe Berger
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of CH629335A5 publication Critical patent/CH629335A5/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3178—Coating or filling in grooves made in the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
CH95177A 1976-01-26 1977-01-26 Semiconductor device with protective coating layer and process for producing said device CH629335A5 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65209276A 1976-01-26 1976-01-26

Publications (1)

Publication Number Publication Date
CH629335A5 true CH629335A5 (en) 1982-04-15

Family

ID=24615479

Family Applications (1)

Application Number Title Priority Date Filing Date
CH95177A CH629335A5 (en) 1976-01-26 1977-01-26 Semiconductor device with protective coating layer and process for producing said device

Country Status (5)

Country Link
JP (1) JPS6047741B2 (sv)
CH (1) CH629335A5 (sv)
DE (1) DE2702921A1 (sv)
FR (1) FR2339252A1 (sv)
GB (1) GB1585477A (sv)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL59344A (en) * 1979-03-01 1983-06-15 M & T Chemicals Inc Precursor solutions of silicone copolymer materials made from a siloxane containing a bis-amino aryl ether or thioether
JPS58152018A (ja) * 1982-03-05 1983-09-09 Hitachi Chem Co Ltd 半導体装置の保護被膜材料用組成物
US4668755A (en) * 1984-08-10 1987-05-26 General Electric Company High molecular weight siloxane polyimides, intermediates therefor, and methods for their preparation and use
US5094919A (en) * 1988-06-30 1992-03-10 Nippon Steel Chemical Co., Ltd. Polyimide copolymers and process for preparing the same
JPH03116857A (ja) * 1989-09-29 1991-05-17 Mitsui Petrochem Ind Ltd 発光または受光装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325450A (en) * 1965-05-12 1967-06-13 Gen Electric Polysiloxaneimides and their production
GB1230421A (sv) * 1967-09-15 1971-05-05
US3615913A (en) * 1968-11-08 1971-10-26 Westinghouse Electric Corp Polyimide and polyamide-polyimide as a semiconductor surface passivator and protectant coating
US3553282A (en) * 1969-09-08 1971-01-05 Gen Electric Siloxane containing polyamide acid blends
US3597269A (en) * 1969-09-30 1971-08-03 Westinghouse Electric Corp Surfce stabilization of semiconductor power devices and article
US3740305A (en) * 1971-10-01 1973-06-19 Gen Electric Composite materials bonded with siloxane containing polyimides
JPS5421073B2 (sv) * 1974-04-15 1979-07-27
SE418432B (sv) * 1975-12-11 1981-05-25 Gen Electric Sett for behandling av ett utvalt omrade hos ett halvledarelement
SE418433B (sv) * 1975-12-11 1981-05-25 Gen Electric Halvledarelement med ett skikt av ett polymert siloxan-innehallande membranmaterial med variabel permeabilitet anbringat pa utvalda ytomraden av elementet
DE2655963C3 (de) * 1976-12-10 1982-03-04 Agfa-Gevaert Ag, 5090 Leverkusen Haltevorrichtung für blattförmige und dreidimensionale Vorlagen auf dem beweglichen Vorlagentransportschlitten eines optischen Kopiergerätes

Also Published As

Publication number Publication date
JPS6047741B2 (ja) 1985-10-23
JPS52109873A (en) 1977-09-14
FR2339252A1 (fr) 1977-08-19
GB1585477A (en) 1981-03-04
FR2339252B1 (sv) 1982-11-05
DE2702921A1 (de) 1977-09-01

Similar Documents

Publication Publication Date Title
DE2455357C3 (de) Halbleiterbauelement und Verfahren zu seiner Herstellung
US4017340A (en) Semiconductor element having a polymeric protective coating and glass coating overlay
US4040874A (en) Semiconductor element having a polymeric protective coating and glass coating overlay
DE69016134T2 (de) Verfahren zur Herstellung einer Polyimid Dünnschicht sowie Verfahren zur Herstellung einer Flüssigkristallorientierungsschicht aus Poyimid.
DE2537330A1 (de) Halbleitervorrichtung und verfahren zu ihrer herstellung
DE2202337A1 (de) Verfahren zur Herstellung einer Halbleiteranordnung und durch dieses Verfahren hergestellte Halbleiteranordnung
DE2739847C2 (de) Verfahren zum selektiven Ätzen einer Schicht aus einem gehärteten Polyimideinheiten enthaltenden hochpolymeren Stoff
KR20100015779A (ko) 폴리이미드 전구체, 폴리이미드, 및 화상 형성 하층막 도포액
DE3639380C2 (de) Monomolekularer Film oder aus monomolekularen Schichten aufgebauter Film und Verfahren zu dessen Herstellung
DE69525501T2 (de) Halbleiterbauelement mit Passivierungsschicht aus einem Benzocycobuten-Polymer und Siliziumpulver
DE2634568C2 (de) Halbleiterbauelement und Verfahren zu dessen Herstellung
CH456941A (de) Schichtstoff
DE4017279C2 (de) Polyimidharz-Masse und ihre Verwendung zur Herstellung von Schutzüberzügen
DE19804617A1 (de) Siloxan-Polyimid und wärmebeständiges Haftmittel, das dasselbe enthält
DE3888666T2 (de) Polyimid-Harz und Isolationsschicht für elektrische oder elektronische Geräte.
CH629335A5 (en) Semiconductor device with protective coating layer and process for producing said device
CH661932A5 (en) Process for the preparation of a coating composition for semiconductor components, this composition, and the use thereof
US4198444A (en) Method for providing substantially hermetic sealing means for electronic components
DE4024595A1 (de) Masse zum schutz von halbleiterbauelementen und deren verwendung zur herstellung von schutzueberzuegen
DE69211354T2 (de) Polyimide mit niedrigem waermeausdehnungskoeffizienten und verbesserter dehnung
DE69700977T2 (de) Polyimidvorläuferlösung, Verfahren zu ihrer Herstellung und Verfahren zur Herstellung einer Beschichtung oder eines Films daraus
CH661933A5 (en) Process for the preparation of a coating composition for the surface of a semiconductor component, this composition, and the use thereof for preventing surface breakdown
DE2655803C2 (de) Verfahren zum Behandeln eines ausgewählten Oberflächenbereiches eines Halbleiterelementes
US4331970A (en) Use of dispersed solids as fillers in polymeric materials to provide material for semiconductor junction passivation
DE2656963A1 (de) Halbleiterelement mit schutzueberzug

Legal Events

Date Code Title Description
PUE Assignment

Owner name: HULS AMERICA INC.

PUE Assignment

Owner name: MICROSI, INC.

PL Patent ceased