CH554052A - Integrierter halbleiterdatenspeicher, der einzelne defekte speicherzellen enthalten kann. - Google Patents

Integrierter halbleiterdatenspeicher, der einzelne defekte speicherzellen enthalten kann.

Info

Publication number
CH554052A
CH554052A CH881772A CH881772A CH554052A CH 554052 A CH554052 A CH 554052A CH 881772 A CH881772 A CH 881772A CH 881772 A CH881772 A CH 881772A CH 554052 A CH554052 A CH 554052A
Authority
CH
Switzerland
Prior art keywords
contain individual
memory cells
integrated semi
individual defective
conductor data
Prior art date
Application number
CH881772A
Other languages
German (de)
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH554052A publication Critical patent/CH554052A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1012—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using codes or arrangements adapted for a specific type of error
    • G06F11/1024—Identification of the type of error

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Hardware Redundancy (AREA)
CH881772A 1971-06-25 1972-06-13 Integrierter halbleiterdatenspeicher, der einzelne defekte speicherzellen enthalten kann. CH554052A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15663771A 1971-06-25 1971-06-25

Publications (1)

Publication Number Publication Date
CH554052A true CH554052A (de) 1974-09-13

Family

ID=22560395

Family Applications (1)

Application Number Title Priority Date Filing Date
CH881772A CH554052A (de) 1971-06-25 1972-06-13 Integrierter halbleiterdatenspeicher, der einzelne defekte speicherzellen enthalten kann.

Country Status (11)

Country Link
US (1) US3735368A (OSRAM)
JP (1) JPS5210613B1 (OSRAM)
AU (1) AU458408B2 (OSRAM)
BE (1) BE785380A (OSRAM)
BR (1) BR7204117D0 (OSRAM)
CA (1) CA960775A (OSRAM)
CH (1) CH554052A (OSRAM)
FR (1) FR2143342B1 (OSRAM)
GB (1) GB1354849A (OSRAM)
IT (1) IT950714B (OSRAM)
NL (1) NL7207823A (OSRAM)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1377859A (en) * 1972-08-03 1974-12-18 Catt I Digital integrated circuits
US4044341A (en) * 1976-03-22 1977-08-23 Rca Corporation Memory array
US4228528B2 (en) * 1979-02-09 1992-10-06 Memory with redundant rows and columns
WO1982002793A1 (en) * 1981-02-02 1982-08-19 Otoole James E Semiconductor memory redundant element identification circuit
US4430727A (en) * 1981-11-10 1984-02-07 International Business Machines Corp. Storage element reconfiguration
JPH0670880B2 (ja) * 1983-01-21 1994-09-07 株式会社日立マイコンシステム 半導体記憶装置
US4922451A (en) * 1987-03-23 1990-05-01 International Business Machines Corporation Memory re-mapping in a microcomputer system
US5031142A (en) * 1989-02-10 1991-07-09 Intel Corporation Reset circuit for redundant memory using CAM cells
US5088066A (en) * 1989-02-10 1992-02-11 Intel Corporation Redundancy decoding circuit using n-channel transistors
DE69033438T2 (de) 1989-04-13 2000-07-06 Sandisk Corp., Santa Clara Austausch von fehlerhaften Speicherzellen einer EEprommatritze
US5051994A (en) * 1989-04-28 1991-09-24 International Business Machines Corporation Computer memory module
EP0480966B1 (en) * 1989-07-06 1996-05-15 Mv Limited A fault tolerant data storage system
US5128941A (en) * 1989-12-20 1992-07-07 Bull Hn Information Systems Inc. Method of organizing a memory for fault tolerance
US4992984A (en) * 1989-12-28 1991-02-12 International Business Machines Corporation Memory module utilizing partially defective memory chips
US5134616A (en) * 1990-02-13 1992-07-28 International Business Machines Corporation Dynamic ram with on-chip ecc and optimized bit and word redundancy
GB9023867D0 (en) * 1990-11-02 1990-12-12 Mv Ltd Improvements relating to a fault tolerant storage system
GB9305801D0 (en) * 1993-03-19 1993-05-05 Deans Alexander R Semiconductor memory system
GB2291516A (en) * 1995-03-28 1996-01-24 Memory Corp Plc Provision of write capability in partial memory systems
US6332183B1 (en) 1998-03-05 2001-12-18 Micron Technology, Inc. Method for recovery of useful areas of partially defective synchronous memory components
US6314527B1 (en) 1998-03-05 2001-11-06 Micron Technology, Inc. Recovery of useful areas of partially defective synchronous memory components
US6381708B1 (en) 1998-04-28 2002-04-30 Micron Technology, Inc. Method for decoding addresses for a defective memory array
US6381707B1 (en) 1998-04-28 2002-04-30 Micron Technology, Inc. System for decoding addresses for a defective memory array
US6496876B1 (en) 1998-12-21 2002-12-17 Micron Technology, Inc. System and method for storing a tag to identify a functional storage location in a memory device
US7111190B2 (en) * 2001-02-23 2006-09-19 Intel Corporation Method and apparatus for reconfigurable memory
US6578157B1 (en) 2000-03-06 2003-06-10 Micron Technology, Inc. Method and apparatus for recovery of useful areas of partially defective direct rambus rimm components
US7269765B1 (en) 2000-04-13 2007-09-11 Micron Technology, Inc. Method and apparatus for storing failing part locations in a module
KR102707649B1 (ko) * 2016-12-22 2024-09-20 에스케이하이닉스 주식회사 에러 정정 코드 회로를 갖는 반도체 메모리 장치

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE620922A (OSRAM) * 1961-08-08
US3444526A (en) * 1966-06-08 1969-05-13 Ibm Storage system using a storage device having defective storage locations
US3434116A (en) * 1966-06-15 1969-03-18 Ibm Scheme for circumventing bad memory cells
US3588830A (en) * 1968-01-17 1971-06-28 Ibm System for using a memory having irremediable bad bits

Also Published As

Publication number Publication date
IT950714B (it) 1973-06-20
CA960775A (en) 1975-01-07
DE2230759A1 (de) 1973-01-11
AU4390772A (en) 1974-01-03
JPS5210613B1 (OSRAM) 1977-03-25
BE785380A (fr) 1972-10-16
US3735368A (en) 1973-05-22
DE2230759B2 (de) 1976-12-30
AU458408B2 (en) 1975-02-27
NL7207823A (OSRAM) 1972-12-28
GB1354849A (en) 1974-06-05
FR2143342A1 (OSRAM) 1973-02-02
BR7204117D0 (pt) 1973-06-14
FR2143342B1 (OSRAM) 1978-03-03

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Legal Events

Date Code Title Description
PL Patent ceased