CH548791A - Verfahren zum aufwachsen einer festen substanz aus der fluessigphase auf ein substrat. - Google Patents
Verfahren zum aufwachsen einer festen substanz aus der fluessigphase auf ein substrat.Info
- Publication number
- CH548791A CH548791A CH1198871A CH1198871A CH548791A CH 548791 A CH548791 A CH 548791A CH 1198871 A CH1198871 A CH 1198871A CH 1198871 A CH1198871 A CH 1198871A CH 548791 A CH548791 A CH 548791A
- Authority
- CH
- Switzerland
- Prior art keywords
- growing
- substrate
- liquid phase
- solid substance
- substance
- Prior art date
Links
- 239000007791 liquid phase Substances 0.000 title 1
- 239000007787 solid Substances 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/064—Rotating sliding boat system
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/062—Vertical dipping system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6452370A | 1970-08-17 | 1970-08-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH548791A true CH548791A (de) | 1974-05-15 |
Family
ID=22056562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1198871A CH548791A (de) | 1970-08-17 | 1971-08-16 | Verfahren zum aufwachsen einer festen substanz aus der fluessigphase auf ein substrat. |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5134391B1 (enrdf_load_stackoverflow) |
| AU (1) | AU459061B2 (enrdf_load_stackoverflow) |
| BE (1) | BE771417A (enrdf_load_stackoverflow) |
| CA (1) | CA955507A (enrdf_load_stackoverflow) |
| CH (1) | CH548791A (enrdf_load_stackoverflow) |
| FR (1) | FR2104258A5 (enrdf_load_stackoverflow) |
| GB (1) | GB1300187A (enrdf_load_stackoverflow) |
| NL (1) | NL175535C (enrdf_load_stackoverflow) |
| SE (1) | SE377055B (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61126501U (enrdf_load_stackoverflow) * | 1985-01-26 | 1986-08-08 | ||
| JP3139329B2 (ja) * | 1995-07-14 | 2001-02-26 | 株式会社村田製作所 | 液相エピタキシャル成長装置 |
-
1971
- 1971-06-30 GB GB3061071A patent/GB1300187A/en not_active Expired
- 1971-07-30 SE SE978071A patent/SE377055B/xx unknown
- 1971-07-30 FR FR7129448A patent/FR2104258A5/fr not_active Expired
- 1971-08-11 CA CA120,465A patent/CA955507A/en not_active Expired
- 1971-08-16 CH CH1198871A patent/CH548791A/xx not_active IP Right Cessation
- 1971-08-16 JP JP46061715A patent/JPS5134391B1/ja active Pending
- 1971-08-16 NL NL7111290A patent/NL175535C/xx not_active IP Right Cessation
- 1971-08-16 AU AU32409/71A patent/AU459061B2/en not_active Expired
- 1971-08-17 BE BE771417A patent/BE771417A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE2140582A1 (de) | 1972-02-24 |
| NL175535B (nl) | 1984-06-18 |
| GB1300187A (en) | 1972-12-20 |
| AU459061B2 (en) | 1975-03-13 |
| BE771417A (fr) | 1971-12-31 |
| NL175535C (nl) | 1984-11-16 |
| CA955507A (en) | 1974-10-01 |
| NL7111290A (enrdf_load_stackoverflow) | 1972-02-21 |
| AU3240971A (en) | 1973-02-22 |
| JPS5134391B1 (enrdf_load_stackoverflow) | 1976-09-25 |
| FR2104258A5 (enrdf_load_stackoverflow) | 1972-04-14 |
| DE2140582B2 (de) | 1975-06-19 |
| SE377055B (enrdf_load_stackoverflow) | 1975-06-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |