CH548791A - Verfahren zum aufwachsen einer festen substanz aus der fluessigphase auf ein substrat. - Google Patents
Verfahren zum aufwachsen einer festen substanz aus der fluessigphase auf ein substrat.Info
- Publication number
- CH548791A CH548791A CH1198871A CH1198871A CH548791A CH 548791 A CH548791 A CH 548791A CH 1198871 A CH1198871 A CH 1198871A CH 1198871 A CH1198871 A CH 1198871A CH 548791 A CH548791 A CH 548791A
- Authority
- CH
- Switzerland
- Prior art keywords
- growing
- substrate
- liquid phase
- solid substance
- substance
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/064—Rotating sliding boat system
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/062—Vertical dipping system
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2907—Materials being Group IIIA-VA materials
- H10P14/2911—Arsenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3421—Arsenides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6452370A | 1970-08-17 | 1970-08-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH548791A true CH548791A (de) | 1974-05-15 |
Family
ID=22056562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1198871A CH548791A (de) | 1970-08-17 | 1971-08-16 | Verfahren zum aufwachsen einer festen substanz aus der fluessigphase auf ein substrat. |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5134391B1 (de) |
| AU (1) | AU459061B2 (de) |
| BE (1) | BE771417A (de) |
| CA (1) | CA955507A (de) |
| CH (1) | CH548791A (de) |
| FR (1) | FR2104258A5 (de) |
| GB (1) | GB1300187A (de) |
| NL (1) | NL175535C (de) |
| SE (1) | SE377055B (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61126501U (de) * | 1985-01-26 | 1986-08-08 | ||
| JP3139329B2 (ja) * | 1995-07-14 | 2001-02-26 | 株式会社村田製作所 | 液相エピタキシャル成長装置 |
-
1971
- 1971-06-30 GB GB30610/71A patent/GB1300187A/en not_active Expired
- 1971-07-30 FR FR7129448A patent/FR2104258A5/fr not_active Expired
- 1971-07-30 SE SE7109780A patent/SE377055B/xx unknown
- 1971-08-11 CA CA120,465A patent/CA955507A/en not_active Expired
- 1971-08-16 NL NLAANVRAGE7111290,A patent/NL175535C/xx not_active IP Right Cessation
- 1971-08-16 AU AU32409/71A patent/AU459061B2/en not_active Expired
- 1971-08-16 CH CH1198871A patent/CH548791A/de not_active IP Right Cessation
- 1971-08-16 JP JP46061715A patent/JPS5134391B1/ja active Pending
- 1971-08-17 BE BE771417A patent/BE771417A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE2140582B2 (de) | 1975-06-19 |
| AU3240971A (en) | 1973-02-22 |
| SE377055B (de) | 1975-06-23 |
| CA955507A (en) | 1974-10-01 |
| NL7111290A (de) | 1972-02-21 |
| AU459061B2 (en) | 1975-03-13 |
| BE771417A (fr) | 1971-12-31 |
| NL175535C (nl) | 1984-11-16 |
| FR2104258A5 (de) | 1972-04-14 |
| NL175535B (nl) | 1984-06-18 |
| GB1300187A (en) | 1972-12-20 |
| JPS5134391B1 (de) | 1976-09-25 |
| DE2140582A1 (de) | 1972-02-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |