CH531255A - Verfahren zur Herstellung einer Halbleitervorrichtung - Google Patents

Verfahren zur Herstellung einer Halbleitervorrichtung

Info

Publication number
CH531255A
CH531255A CH1423371A CH1423371A CH531255A CH 531255 A CH531255 A CH 531255A CH 1423371 A CH1423371 A CH 1423371A CH 1423371 A CH1423371 A CH 1423371A CH 531255 A CH531255 A CH 531255A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
CH1423371A
Other languages
German (de)
English (en)
Inventor
Gonzales Carbajal Bernard Iii
Milton Gosney William
Henry Hall Lou
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CH531255A publication Critical patent/CH531255A/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0123Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
CH1423371A 1970-10-01 1971-09-30 Verfahren zur Herstellung einer Halbleitervorrichtung CH531255A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7722270A 1970-10-01 1970-10-01
US9413870A 1970-12-01 1970-12-01

Publications (1)

Publication Number Publication Date
CH531255A true CH531255A (de) 1972-11-30

Family

ID=26759038

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1423371A CH531255A (de) 1970-10-01 1971-09-30 Verfahren zur Herstellung einer Halbleitervorrichtung

Country Status (3)

Country Link
JP (1) JPS5514546B1 (cg-RX-API-DMAC10.html)
CH (1) CH531255A (cg-RX-API-DMAC10.html)
FR (1) FR2112250A1 (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6039939U (ja) * 1983-08-26 1985-03-20 株式会社学習研究社 上皿てこ式の台はかり

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3566518A (en) * 1967-10-13 1971-03-02 Gen Electric Method for fabricating field-effect transistor devices and integrated circuit modules containing the same by selective diffusion of activator impurities through preselected portions of passivating-insulating films

Also Published As

Publication number Publication date
JPS5514546B1 (cg-RX-API-DMAC10.html) 1980-04-17
FR2112250A1 (en) 1972-06-16
FR2112250B1 (cg-RX-API-DMAC10.html) 1977-08-05

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Legal Events

Date Code Title Description
PL Patent ceased