FR2112250B1 - - Google Patents

Info

Publication number
FR2112250B1
FR2112250B1 FR7135202A FR7135202A FR2112250B1 FR 2112250 B1 FR2112250 B1 FR 2112250B1 FR 7135202 A FR7135202 A FR 7135202A FR 7135202 A FR7135202 A FR 7135202A FR 2112250 B1 FR2112250 B1 FR 2112250B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7135202A
Other languages
French (fr)
Other versions
FR2112250A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of FR2112250A1 publication Critical patent/FR2112250A1/fr
Application granted granted Critical
Publication of FR2112250B1 publication Critical patent/FR2112250B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0123Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
FR7135202A 1970-10-01 1971-09-30 Molydenum gate fet - using doped oxides for diffusion and passivation Granted FR2112250A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7722270A 1970-10-01 1970-10-01
US9413870A 1970-12-01 1970-12-01

Publications (2)

Publication Number Publication Date
FR2112250A1 FR2112250A1 (en) 1972-06-16
FR2112250B1 true FR2112250B1 (cg-RX-API-DMAC10.html) 1977-08-05

Family

ID=26759038

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7135202A Granted FR2112250A1 (en) 1970-10-01 1971-09-30 Molydenum gate fet - using doped oxides for diffusion and passivation

Country Status (3)

Country Link
JP (1) JPS5514546B1 (cg-RX-API-DMAC10.html)
CH (1) CH531255A (cg-RX-API-DMAC10.html)
FR (1) FR2112250A1 (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6039939U (ja) * 1983-08-26 1985-03-20 株式会社学習研究社 上皿てこ式の台はかり

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3566518A (en) * 1967-10-13 1971-03-02 Gen Electric Method for fabricating field-effect transistor devices and integrated circuit modules containing the same by selective diffusion of activator impurities through preselected portions of passivating-insulating films

Also Published As

Publication number Publication date
CH531255A (de) 1972-11-30
JPS5514546B1 (cg-RX-API-DMAC10.html) 1980-04-17
FR2112250A1 (en) 1972-06-16

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