CH527641A - Verfahren zum Dotieren von Silicium- oder Germaniumkristallen mit Antimon und/oder Wismut - Google Patents
Verfahren zum Dotieren von Silicium- oder Germaniumkristallen mit Antimon und/oder WismutInfo
- Publication number
- CH527641A CH527641A CH141370A CH141370A CH527641A CH 527641 A CH527641 A CH 527641A CH 141370 A CH141370 A CH 141370A CH 141370 A CH141370 A CH 141370A CH 527641 A CH527641 A CH 527641A
- Authority
- CH
- Switzerland
- Prior art keywords
- bismuth
- antimony
- doping silicon
- germanium crystals
- germanium
- Prior art date
Links
- 229910052787 antimony Inorganic materials 0.000 title 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 title 1
- 229910052797 bismuth Inorganic materials 0.000 title 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title 1
- 239000013078 crystal Substances 0.000 title 1
- 229910052732 germanium Inorganic materials 0.000 title 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691905415 DE1905415A1 (de) | 1969-02-04 | 1969-02-04 | Verfahren zum Dotieren von Silicium- oder Germaniumkristallen mit Antimon und/oder Wismut |
Publications (1)
Publication Number | Publication Date |
---|---|
CH527641A true CH527641A (de) | 1972-09-15 |
Family
ID=5724275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH141370A CH527641A (de) | 1969-02-04 | 1970-02-02 | Verfahren zum Dotieren von Silicium- oder Germaniumkristallen mit Antimon und/oder Wismut |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS4824666B1 (es) |
AT (1) | AT307507B (es) |
CH (1) | CH527641A (es) |
DE (1) | DE1905415A1 (es) |
FR (1) | FR2033290A1 (es) |
GB (1) | GB1253765A (es) |
NL (1) | NL6916174A (es) |
SE (1) | SE354791B (es) |
-
1969
- 1969-02-04 DE DE19691905415 patent/DE1905415A1/de active Pending
- 1969-10-27 NL NL6916174A patent/NL6916174A/xx unknown
-
1970
- 1970-02-02 CH CH141370A patent/CH527641A/de unknown
- 1970-02-02 AT AT93770A patent/AT307507B/de not_active IP Right Cessation
- 1970-02-02 FR FR7003532A patent/FR2033290A1/fr not_active Withdrawn
- 1970-02-03 GB GB499370A patent/GB1253765A/en not_active Expired
- 1970-02-04 SE SE143270A patent/SE354791B/xx unknown
- 1970-02-04 JP JP934470A patent/JPS4824666B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE1905415A1 (de) | 1970-08-06 |
GB1253765A (en) | 1971-11-17 |
AT307507B (de) | 1973-05-25 |
JPS4824666B1 (es) | 1973-07-23 |
FR2033290A1 (es) | 1970-12-04 |
NL6916174A (es) | 1970-08-06 |
SE354791B (es) | 1973-03-26 |
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