JPS4824666B1 - - Google Patents

Info

Publication number
JPS4824666B1
JPS4824666B1 JP934470A JP934470A JPS4824666B1 JP S4824666 B1 JPS4824666 B1 JP S4824666B1 JP 934470 A JP934470 A JP 934470A JP 934470 A JP934470 A JP 934470A JP S4824666 B1 JPS4824666 B1 JP S4824666B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP934470A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4824666B1 publication Critical patent/JPS4824666B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP934470A 1969-02-04 1970-02-04 Pending JPS4824666B1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691905415 DE1905415A1 (de) 1969-02-04 1969-02-04 Verfahren zum Dotieren von Silicium- oder Germaniumkristallen mit Antimon und/oder Wismut

Publications (1)

Publication Number Publication Date
JPS4824666B1 true JPS4824666B1 (es) 1973-07-23

Family

ID=5724275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP934470A Pending JPS4824666B1 (es) 1969-02-04 1970-02-04

Country Status (8)

Country Link
JP (1) JPS4824666B1 (es)
AT (1) AT307507B (es)
CH (1) CH527641A (es)
DE (1) DE1905415A1 (es)
FR (1) FR2033290A1 (es)
GB (1) GB1253765A (es)
NL (1) NL6916174A (es)
SE (1) SE354791B (es)

Also Published As

Publication number Publication date
CH527641A (de) 1972-09-15
AT307507B (de) 1973-05-25
SE354791B (es) 1973-03-26
FR2033290A1 (es) 1970-12-04
GB1253765A (en) 1971-11-17
DE1905415A1 (de) 1970-08-06
NL6916174A (es) 1970-08-06

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