CH521025A - Verfahren zum Herstellen epitaktischer Aufwachsschichten aus am Schmelzpunkt leicht zersetzlichen halbleitenden Verbindungen durch Schmelzepitaxie - Google Patents

Verfahren zum Herstellen epitaktischer Aufwachsschichten aus am Schmelzpunkt leicht zersetzlichen halbleitenden Verbindungen durch Schmelzepitaxie

Info

Publication number
CH521025A
CH521025A CH201170A CH201170A CH521025A CH 521025 A CH521025 A CH 521025A CH 201170 A CH201170 A CH 201170A CH 201170 A CH201170 A CH 201170A CH 521025 A CH521025 A CH 521025A
Authority
CH
Switzerland
Prior art keywords
production
melting point
epitaxial growth
easily decomposable
growth layers
Prior art date
Application number
CH201170A
Other languages
English (en)
Inventor
Wolfgang Dr Touchy
Bungenstab Eckart
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19691908277 external-priority patent/DE1908277C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH521025A publication Critical patent/CH521025A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/08—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH201170A 1969-02-19 1970-02-12 Verfahren zum Herstellen epitaktischer Aufwachsschichten aus am Schmelzpunkt leicht zersetzlichen halbleitenden Verbindungen durch Schmelzepitaxie CH521025A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691908277 DE1908277C3 (de) 1969-02-19 Verfahren zum Herstellen von aus Galliumarsenid bestehenden epitak tischen Aufwachsschichten nach dem Schmelzepitaxieverfahren

Publications (1)

Publication Number Publication Date
CH521025A true CH521025A (de) 1972-03-31

Family

ID=5725714

Family Applications (1)

Application Number Title Priority Date Filing Date
CH201170A CH521025A (de) 1969-02-19 1970-02-12 Verfahren zum Herstellen epitaktischer Aufwachsschichten aus am Schmelzpunkt leicht zersetzlichen halbleitenden Verbindungen durch Schmelzepitaxie

Country Status (8)

Country Link
US (1) US3705825A (de)
JP (1) JPS5110472B1 (de)
AT (1) AT324422B (de)
CH (1) CH521025A (de)
FR (1) FR2031521B1 (de)
GB (1) GB1255576A (de)
NL (1) NL6916855A (de)
SE (1) SE348649B (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3804060A (en) * 1970-03-27 1974-04-16 Sperry Rand Corp Liquid epitaxy apparatus
JPS53271B1 (de) * 1971-03-05 1978-01-06
US3859148A (en) * 1972-12-01 1975-01-07 Bell Telephone Labor Inc Epitaxial crystal growth of group iii-v compound semiconductors from solution
US3913212A (en) * 1972-12-15 1975-10-21 Bell Telephone Labor Inc Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes
US3902924A (en) * 1973-08-30 1975-09-02 Honeywell Inc Growth of mercury cadmium telluride by liquid phase epitaxy and the product thereof
US4169727A (en) * 1978-05-01 1979-10-02 Morgan Semiconductor, Inc. Alloy of silicon and gallium arsenide
US4384398A (en) * 1981-10-26 1983-05-24 Bell Telephone Laboratories, Incorporated Elimination of silicon pyramids from epitaxial crystals of GaAs and GaAlAs
JPS58156598A (ja) * 1982-03-09 1983-09-17 Semiconductor Res Found 結晶成長法

Also Published As

Publication number Publication date
JPS5110472B1 (de) 1976-04-03
FR2031521B1 (de) 1974-10-31
GB1255576A (en) 1971-12-01
DE1908277B2 (de) 1976-12-23
NL6916855A (de) 1970-08-21
FR2031521A1 (de) 1970-11-20
SE348649B (de) 1972-09-11
AT324422B (de) 1975-08-25
DE1908277A1 (de) 1970-09-10
US3705825A (en) 1972-12-12

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Legal Events

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