CH505506A - Schaltungsanordnung mit mindestens einer Stufe mit Mitteln zum Übertragen von Ladung von einer ersten auf eine zweite Kapazität der Stufe - Google Patents

Schaltungsanordnung mit mindestens einer Stufe mit Mitteln zum Übertragen von Ladung von einer ersten auf eine zweite Kapazität der Stufe

Info

Publication number
CH505506A
CH505506A CH600369A CH600369A CH505506A CH 505506 A CH505506 A CH 505506A CH 600369 A CH600369 A CH 600369A CH 600369 A CH600369 A CH 600369A CH 505506 A CH505506 A CH 505506A
Authority
CH
Switzerland
Prior art keywords
stage
capacitance
circuit arrangement
transferring charge
transferring
Prior art date
Application number
CH600369A
Other languages
German (de)
English (en)
Inventor
Johan Sangster Frederi Leonard
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH505506A publication Critical patent/CH505506A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866Surface Channel CCD
    • H01L29/76883Three-Phase CCD
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04Shift registers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833Buried channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Networks Using Active Elements (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CH600369A 1968-04-23 1969-04-21 Schaltungsanordnung mit mindestens einer Stufe mit Mitteln zum Übertragen von Ladung von einer ersten auf eine zweite Kapazität der Stufe CH505506A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE6805705,A NL174503C (nl) 1968-04-23 1968-04-23 Inrichting voor het overhevelen van lading.

Publications (1)

Publication Number Publication Date
CH505506A true CH505506A (de) 1971-03-31

Family

ID=19803413

Family Applications (1)

Application Number Title Priority Date Filing Date
CH600369A CH505506A (de) 1968-04-23 1969-04-21 Schaltungsanordnung mit mindestens einer Stufe mit Mitteln zum Übertragen von Ladung von einer ersten auf eine zweite Kapazität der Stufe

Country Status (12)

Country Link
JP (2) JPS4830171B1 (es)
AT (1) AT301907B (es)
BE (1) BE731897A (es)
BR (1) BR6908247D0 (es)
CH (1) CH505506A (es)
DE (1) DE1920077C2 (es)
DK (1) DK135253B (es)
ES (2) ES366284A1 (es)
FR (1) FR2010994A1 (es)
GB (1) GB1273181A (es)
NL (2) NL174503C (es)
SE (2) SE429797B (es)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660697A (en) * 1970-02-16 1972-05-02 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3858232A (en) * 1970-02-16 1974-12-31 Bell Telephone Labor Inc Information storage devices
US3700932A (en) * 1970-02-16 1972-10-24 Bell Telephone Labor Inc Charge coupled devices
US3770988A (en) * 1970-09-04 1973-11-06 Gen Electric Self-registered surface charge launch-receive device and method for making
US3789240A (en) * 1970-10-26 1974-01-29 Rca Corp Bucket brigade scanning of sensor array
US3790825A (en) * 1972-10-10 1974-02-05 Gen Electric Gate-diffusion isolation for jfet depletion-mode bucket brigade circuit
US3784847A (en) * 1972-10-10 1974-01-08 Gen Electric Dielectric strip isolation for jfet or mesfet depletion-mode bucket-brigade circuit
US3825996A (en) * 1972-10-10 1974-07-30 Gen Electric Gate-diffusion isolation for jfet depletion-mode bucket brigade circuit
US3825995A (en) * 1972-10-10 1974-07-30 Gen Electric Dielectric strip isolation for jfet or mesfet depletion-mode bucket-brigade circuit
GB1457253A (en) * 1972-12-01 1976-12-01 Mullard Ltd Semiconductor charge transfer devices
JPS5936401U (ja) * 1982-08-31 1984-03-07 満企業株式会社 コンロ付き缶詰
JPS5936402U (ja) * 1982-08-31 1984-03-07 満企業株式会社 缶詰用加熱台
JPS5975602U (ja) * 1982-11-12 1984-05-22 井上 定夫 携帯用こん炉付容器
JPS60119333U (ja) * 1984-01-23 1985-08-12 株式会社 八木商店 コツヘル等の火台
DE3546745C2 (de) * 1984-05-30 1994-06-30 Toshiba Kawasaki Kk Lateraler MOS-Feldeffekttransistor mit Leitfähigkeitsmodulation
US4672407A (en) 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
JPS61252433A (ja) * 1985-05-02 1986-11-10 Mitsutaka Uto 携帯簡易コンロ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3289010A (en) 1963-11-21 1966-11-29 Burroughs Corp Shift register
FR1430601A (fr) 1964-05-08 1966-03-04 Gen Micro Electronics Inc Dispositif de mémoire
DE1474510B2 (de) 1965-12-14 1971-11-25 Siemens AG, 1000 Berlin u. 8000 München Durch schiebeimpulse gesteuerte schieberegister insbesondere fuer zeitmultiplex systeme

Also Published As

Publication number Publication date
DE1920077A1 (de) 1969-11-06
FR2010994A1 (es) 1970-02-27
BR6908247D0 (pt) 1973-05-31
DE1920077C2 (de) 1984-11-29
ES366284A1 (es) 1971-05-01
DK135253B (da) 1977-03-21
NL6904620A (es) 1969-10-27
AT301907B (de) 1972-09-25
SE440420B (sv) 1985-07-29
NL174503B (nl) 1984-01-16
DK135253C (es) 1977-08-29
BE731897A (es) 1969-10-22
NL6805705A (es) 1969-10-27
JPS4817779B1 (es) 1973-05-31
SE7605172L (sv) 1976-05-06
SE429797B (sv) 1983-09-26
ES386995A1 (es) 1973-04-16
GB1273181A (en) 1972-05-03
JPS4830171B1 (es) 1973-09-18
NL174503C (nl) 1984-06-18
NL164158B (nl) 1980-06-16
NL164158C (nl) 1980-11-17

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Legal Events

Date Code Title Description
PL Patent ceased