CH474854A - Method of manufacturing semiconductor devices - Google Patents

Method of manufacturing semiconductor devices

Info

Publication number
CH474854A
CH474854A CH420567A CH420567A CH474854A CH 474854 A CH474854 A CH 474854A CH 420567 A CH420567 A CH 420567A CH 420567 A CH420567 A CH 420567A CH 474854 A CH474854 A CH 474854A
Authority
CH
Switzerland
Prior art keywords
semiconductor devices
manufacturing semiconductor
manufacturing
devices
semiconductor
Prior art date
Application number
CH420567A
Other languages
German (de)
Inventor
Inoue Morio
Kano Gota
Matsuno Jinichi
Takayanagi Shigetoshi
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of CH474854A publication Critical patent/CH474854A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
CH420567A 1966-03-29 1967-03-23 Method of manufacturing semiconductor devices CH474854A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020966 1966-03-29

Publications (1)

Publication Number Publication Date
CH474854A true CH474854A (en) 1969-06-30

Family

ID=12020759

Family Applications (1)

Application Number Title Priority Date Filing Date
CH420567A CH474854A (en) 1966-03-29 1967-03-23 Method of manufacturing semiconductor devices

Country Status (7)

Country Link
BE (1) BE696171A (en)
CH (1) CH474854A (en)
DE (1) DE1614136B1 (en)
FR (1) FR1515732A (en)
GB (1) GB1107620A (en)
NL (1) NL148360B (en)
SE (1) SE325338B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3562606A (en) * 1969-08-13 1971-02-09 Varian Associates Subsurface gallium arsenide schottky-type diode and method of fabricating same
KR102355507B1 (en) * 2018-11-14 2022-01-27 (주)디엔에프 Method of manufacturing a molybdenum-containing thin film and molybdenum-containing thin film manufactured thereby

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE624959A (en) * 1961-11-20
GB1064290A (en) * 1963-01-14 1967-04-05 Motorola Inc Method of making semiconductor devices

Also Published As

Publication number Publication date
DE1614136B1 (en) 1971-08-12
NL6704404A (en) 1967-10-02
SE325338B (en) 1970-06-29
NL148360B (en) 1976-01-15
FR1515732A (en) 1968-03-01
GB1107620A (en) 1968-03-27
BE696171A (en) 1967-09-01

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Legal Events

Date Code Title Description
PL Patent ceased