CH473908A - Procédé pour l'obtention d'un dépôt par pulvérisation cathodique - Google Patents

Procédé pour l'obtention d'un dépôt par pulvérisation cathodique

Info

Publication number
CH473908A
CH473908A CH918768A CH918768A CH473908A CH 473908 A CH473908 A CH 473908A CH 918768 A CH918768 A CH 918768A CH 918768 A CH918768 A CH 918768A CH 473908 A CH473908 A CH 473908A
Authority
CH
Switzerland
Prior art keywords
deposition
obtaining
cathodic sputtering
cathodic
sputtering
Prior art date
Application number
CH918768A
Other languages
English (en)
French (fr)
Inventor
Rene Bessot Jean-Jacques
Andre Burlurut Jean-Claude
Original Assignee
Alcatel Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Sa filed Critical Alcatel Sa
Publication of CH473908A publication Critical patent/CH473908A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)
CH918768A 1967-06-22 1968-06-20 Procédé pour l'obtention d'un dépôt par pulvérisation cathodique CH473908A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR111571A FR1534917A (fr) 1967-06-22 1967-06-22 Perfectionnements à l'obtention de dépôts par pulvérisation cathodique

Publications (1)

Publication Number Publication Date
CH473908A true CH473908A (fr) 1969-06-15

Family

ID=8633649

Family Applications (1)

Application Number Title Priority Date Filing Date
CH918768A CH473908A (fr) 1967-06-22 1968-06-20 Procédé pour l'obtention d'un dépôt par pulvérisation cathodique

Country Status (4)

Country Link
US (1) US3616452A (enrdf_load_stackoverflow)
CH (1) CH473908A (enrdf_load_stackoverflow)
FR (1) FR1534917A (enrdf_load_stackoverflow)
GB (1) GB1233404A (enrdf_load_stackoverflow)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH551497A (de) * 1971-10-06 1974-07-15 Balzers Patent Beteilig Ag Anordnung zur zerstaeubung von stoffen mittels einer elektrischen niederspannungsentladung.
US4038171A (en) * 1976-03-31 1977-07-26 Battelle Memorial Institute Supported plasma sputtering apparatus for high deposition rate over large area
US4175029A (en) * 1978-03-16 1979-11-20 Dmitriev Jury A Apparatus for ion plasma coating of articles
US4440108A (en) * 1982-09-24 1984-04-03 Spire Corporation Ion beam coating apparatus
JPH02163368A (ja) * 1988-12-15 1990-06-22 Matsushita Electric Ind Co Ltd スパッタリング装置
US6238533B1 (en) 1995-08-07 2001-05-29 Applied Materials, Inc. Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
US5962923A (en) 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
US7253109B2 (en) 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
EP1034566A1 (en) * 1997-11-26 2000-09-13 Applied Materials, Inc. Damage-free sculptured coating deposition
US6348764B1 (en) * 2000-08-17 2002-02-19 Taiwan Semiconductor Manufacturing Company, Ltd Indirect hot cathode (IHC) ion source
US20060049041A1 (en) * 2004-08-20 2006-03-09 Jds Uniphase Corporation Anode for sputter coating
EP1630260B1 (en) * 2004-08-20 2011-07-13 JDS Uniphase Inc. Magnetic latch for a vapour deposition system
US7879209B2 (en) * 2004-08-20 2011-02-01 Jds Uniphase Corporation Cathode for sputter coating
US8500973B2 (en) * 2004-08-20 2013-08-06 Jds Uniphase Corporation Anode for sputter coating
US7954219B2 (en) * 2004-08-20 2011-06-07 Jds Uniphase Corporation Substrate holder assembly device
US7785456B2 (en) * 2004-10-19 2010-08-31 Jds Uniphase Corporation Magnetic latch for a vapour deposition system
SE529375C2 (sv) * 2005-07-22 2007-07-24 Sandvik Intellectual Property Anordning för förbättrad plasmaaktivitet i PVD-reaktorer
RU2599587C1 (ru) * 2015-05-27 2016-10-10 Российская Федерация от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Устройство для нанесения диффузионных покрытий

Also Published As

Publication number Publication date
FR1534917A (fr) 1968-08-02
US3616452A (en) 1971-10-26
DE1765625B2 (de) 1976-01-29
DE1765625A1 (de) 1972-04-13
GB1233404A (enrdf_load_stackoverflow) 1971-05-26

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Legal Events

Date Code Title Description
PL Patent ceased