CH463578A - Transistorverstärker mit Feldeffekttransistor und Schichttransistoren - Google Patents

Transistorverstärker mit Feldeffekttransistor und Schichttransistoren

Info

Publication number
CH463578A
CH463578A CH627867A CH627867A CH463578A CH 463578 A CH463578 A CH 463578A CH 627867 A CH627867 A CH 627867A CH 627867 A CH627867 A CH 627867A CH 463578 A CH463578 A CH 463578A
Authority
CH
Switzerland
Prior art keywords
transistor
field effect
layer transistors
amplifier
effect transistor
Prior art date
Application number
CH627867A
Other languages
German (de)
English (en)
Inventor
Maria Peters Apphonsus
Jan Nienhuis Rijkert
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH463578A publication Critical patent/CH463578A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34DC amplifiers in which all stages are DC-coupled
    • H03F3/343DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
CH627867A 1966-05-06 1967-05-03 Transistorverstärker mit Feldeffekttransistor und Schichttransistoren CH463578A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6606165A NL6606165A (US06633782-20031014-M00005.png) 1966-05-06 1966-05-06

Publications (1)

Publication Number Publication Date
CH463578A true CH463578A (de) 1968-10-15

Family

ID=19796516

Family Applications (1)

Application Number Title Priority Date Filing Date
CH627867A CH463578A (de) 1966-05-06 1967-05-03 Transistorverstärker mit Feldeffekttransistor und Schichttransistoren

Country Status (7)

Country Link
AT (1) AT266214B (US06633782-20031014-M00005.png)
BE (1) BE698090A (US06633782-20031014-M00005.png)
CH (1) CH463578A (US06633782-20031014-M00005.png)
DE (1) DE1285551B (US06633782-20031014-M00005.png)
ES (1) ES340095A1 (US06633782-20031014-M00005.png)
GB (1) GB1189453A (US06633782-20031014-M00005.png)
NL (1) NL6606165A (US06633782-20031014-M00005.png)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113339U (US06633782-20031014-M00005.png) * 1976-02-26 1977-08-29

Also Published As

Publication number Publication date
ES340095A1 (es) 1968-06-01
GB1189453A (en) 1970-04-29
NL6606165A (US06633782-20031014-M00005.png) 1967-11-07
DE1285551B (de) 1968-12-19
BE698090A (US06633782-20031014-M00005.png) 1967-11-06
AT266214B (de) 1968-11-11

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