CH462976A - Optoelektronische Halbleiteranordnung - Google Patents
Optoelektronische HalbleiteranordnungInfo
- Publication number
- CH462976A CH462976A CH1590966A CH1590966A CH462976A CH 462976 A CH462976 A CH 462976A CH 1590966 A CH1590966 A CH 1590966A CH 1590966 A CH1590966 A CH 1590966A CH 462976 A CH462976 A CH 462976A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor device
- optoelectronic semiconductor
- optoelectronic
- semiconductor
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Led Devices (AREA)
- Optical Couplings Of Light Guides (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0100363 | 1965-11-04 | ||
| DES0106286 | 1966-09-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH462976A true CH462976A (de) | 1968-09-30 |
Family
ID=25998310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1590966A CH462976A (de) | 1965-11-04 | 1966-11-03 | Optoelektronische Halbleiteranordnung |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US3478215A (de) |
| AT (1) | AT271583B (de) |
| BE (1) | BE689271A (de) |
| CH (1) | CH462976A (de) |
| DE (2) | DE1514613A1 (de) |
| DK (1) | DK124644B (de) |
| ES (1) | ES333020A1 (de) |
| FR (1) | FR1498176A (de) |
| GB (1) | GB1155590A (de) |
| NL (1) | NL6615108A (de) |
| NO (1) | NO120590B (de) |
| SE (1) | SE336028B (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3728593A (en) * | 1971-10-06 | 1973-04-17 | Motorola Inc | Electro optical device comprising a unitary photoemitting junction and a photosensitive body portion having highly doped semiconductor electrodes |
| US3914137A (en) * | 1971-10-06 | 1975-10-21 | Motorola Inc | Method of manufacturing a light coupled monolithic circuit by selective epitaxial deposition |
| US3749967A (en) * | 1971-12-23 | 1973-07-31 | Avco Corp | Electron beam discharge device |
| US4054794A (en) * | 1975-03-12 | 1977-10-18 | Varo, Inc. | Optical communications link |
| JPS58186986A (ja) * | 1982-04-27 | 1983-11-01 | Kokusai Denshin Denwa Co Ltd <Kdd> | モニタ付分布帰還形半導体レ−ザ |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3369132A (en) * | 1962-11-14 | 1968-02-13 | Ibm | Opto-electronic semiconductor devices |
| US3229104A (en) * | 1962-12-24 | 1966-01-11 | Ibm | Four terminal electro-optical semiconductor device using light coupling |
| DE1264513C2 (de) * | 1963-11-29 | 1973-01-25 | Texas Instruments Inc | Bezugspotentialfreier gleichstromdifferenzverstaerker |
| US3358146A (en) * | 1964-04-29 | 1967-12-12 | Gen Electric | Integrally constructed solid state light emissive-light responsive negative resistance device |
| US3354316A (en) * | 1965-01-06 | 1967-11-21 | Bell Telephone Labor Inc | Optoelectronic device using light emitting diode and photodetector |
-
1965
- 1965-11-04 DE DE19651514613 patent/DE1514613A1/de active Pending
-
1966
- 1966-09-30 DE DE19661564730 patent/DE1564730A1/de active Pending
- 1966-10-13 AT AT960166A patent/AT271583B/de active
- 1966-10-25 NL NL6615108A patent/NL6615108A/xx unknown
- 1966-10-31 US US590706A patent/US3478215A/en not_active Expired - Lifetime
- 1966-11-03 GB GB49316/66A patent/GB1155590A/en not_active Expired
- 1966-11-03 FR FR82390A patent/FR1498176A/fr not_active Expired
- 1966-11-03 ES ES0333020A patent/ES333020A1/es not_active Expired
- 1966-11-03 CH CH1590966A patent/CH462976A/de unknown
- 1966-11-03 DK DK572366AA patent/DK124644B/da unknown
- 1966-11-04 SE SE15147/66A patent/SE336028B/xx unknown
- 1966-11-04 BE BE689271D patent/BE689271A/xx unknown
-
1967
- 1967-09-18 NO NO169773A patent/NO120590B/no unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3478215A (en) | 1969-11-11 |
| NL6615108A (de) | 1967-05-05 |
| NO120590B (de) | 1970-11-09 |
| GB1155590A (en) | 1969-06-18 |
| ES333020A1 (es) | 1967-07-16 |
| AT271583B (de) | 1969-06-10 |
| FR1498176A (fr) | 1967-10-13 |
| DE1514613A1 (de) | 1969-06-26 |
| BE689271A (de) | 1967-05-05 |
| SE336028B (de) | 1971-06-21 |
| DK124644B (da) | 1972-11-06 |
| DE1564730A1 (de) | 1972-01-20 |
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