CH460008A - Verfahren zur Herstellung neuer Isochinolin-Derivate - Google Patents
Verfahren zur Herstellung neuer Isochinolin-DerivateInfo
- Publication number
- CH460008A CH460008A CH824568A CH824568A CH460008A CH 460008 A CH460008 A CH 460008A CH 824568 A CH824568 A CH 824568A CH 824568 A CH824568 A CH 824568A CH 460008 A CH460008 A CH 460008A
- Authority
- CH
- Switzerland
- Prior art keywords
- preparation
- isoquinoline derivatives
- new isoquinoline
- new
- derivatives
- Prior art date
Links
- 125000002183 isoquinolinyl group Chemical class C1(=NC=CC2=CC=CC=C12)* 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
- C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
- C07D471/04—Ortho-condensed systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/074—Stacked arrangements of non-apertured devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/55—Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Die Bonding (AREA)
- Rectifiers (AREA)
- Thyristors (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US388237A US3369290A (en) | 1964-08-07 | 1964-08-07 | Method of making passivated semiconductor devices |
US39173264A | 1964-08-24 | 1964-08-24 | |
US46255765A | 1965-06-09 | 1965-06-09 | |
US47797665A | 1965-08-06 | 1965-08-06 | |
US478351A US3383760A (en) | 1965-08-09 | 1965-08-09 | Method of making semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
CH460008A true CH460008A (de) | 1968-07-31 |
Family
ID=27541415
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH824568A CH460008A (de) | 1964-08-07 | 1965-08-06 | Verfahren zur Herstellung neuer Isochinolin-Derivate |
CH824468A CH460007A (de) | 1964-08-07 | 1965-08-06 | Verfahren zur Herstellung neuer Isochinolin-Derivate |
CH1112065A CH460031A (de) | 1964-08-07 | 1965-08-06 | Verfahren zur Herstellung neuer Diazepin-Derivate |
CH824368A CH460033A (de) | 1964-08-07 | 1965-08-06 | Verfahren zur Herstellung neuer Diazepin-Derivate |
CH1154865A CH466298A (de) | 1964-08-07 | 1965-08-17 | Verfahren zur Herstellung von neuen Isochinolobenzodiazepin-Derivaten |
Family Applications After (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH824468A CH460007A (de) | 1964-08-07 | 1965-08-06 | Verfahren zur Herstellung neuer Isochinolin-Derivate |
CH1112065A CH460031A (de) | 1964-08-07 | 1965-08-06 | Verfahren zur Herstellung neuer Diazepin-Derivate |
CH824368A CH460033A (de) | 1964-08-07 | 1965-08-06 | Verfahren zur Herstellung neuer Diazepin-Derivate |
CH1154865A CH466298A (de) | 1964-08-07 | 1965-08-17 | Verfahren zur Herstellung von neuen Isochinolobenzodiazepin-Derivaten |
Country Status (17)
Country | Link |
---|---|
BE (1) | BE668687A (pt) |
BG (1) | BG17566A3 (pt) |
BR (4) | BR6572393D0 (pt) |
CA (1) | CA953297A (pt) |
CH (5) | CH460008A (pt) |
CY (1) | CY613A (pt) |
DE (3) | DE1514363B1 (pt) |
ES (1) | ES337005A1 (pt) |
FI (1) | FI46968C (pt) |
FR (2) | FR4985M (pt) |
GB (7) | GB1084598A (pt) |
IL (1) | IL24214A (pt) |
MC (1) | MC542A1 (pt) |
MY (1) | MY7100223A (pt) |
NL (4) | NL6510287A (pt) |
NO (1) | NO120580B (pt) |
SE (5) | SE312863B (pt) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5116264B2 (pt) | 1971-10-01 | 1976-05-22 | ||
EP0603973A3 (en) * | 1992-12-23 | 1995-06-28 | Philips Electronics Nv | Semiconductor component having p-n junctions separated by trenches and its manufacturing process. |
EP0603971A3 (en) * | 1992-12-23 | 1995-06-28 | Koninkl Philips Electronics Nv | Semiconductor device with passivated sides and method for manufacturing it. |
US5401690A (en) * | 1993-07-08 | 1995-03-28 | Goodark Electronic Corp. | Method for making circular diode chips through glass passivation |
GB201111217D0 (en) | 2011-07-01 | 2011-08-17 | Ash Gaming Ltd | A system and method |
US9570542B2 (en) * | 2014-04-01 | 2017-02-14 | Infineon Technologies Ag | Semiconductor device including a vertical edge termination structure and method of manufacturing |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2865082A (en) * | 1953-07-16 | 1958-12-23 | Sylvania Electric Prod | Semiconductor mount and method |
NL120075C (pt) * | 1960-02-04 | |||
NL284599A (pt) * | 1961-05-26 | 1900-01-01 |
-
0
- NL NL129867D patent/NL129867C/xx active
-
1965
- 1965-07-30 GB GB32673/65A patent/GB1084598A/en not_active Expired
- 1965-08-06 DE DE19651514363 patent/DE1514363B1/de active Pending
- 1965-08-06 CH CH824568A patent/CH460008A/de unknown
- 1965-08-06 CH CH824468A patent/CH460007A/de unknown
- 1965-08-06 NL NL6510287A patent/NL6510287A/xx unknown
- 1965-08-06 CH CH1112065A patent/CH460031A/de unknown
- 1965-08-06 SE SE10352/65A patent/SE312863B/xx unknown
- 1965-08-06 CH CH824368A patent/CH460033A/de unknown
- 1965-08-13 GB GB34751/65A patent/GB1126352A/en not_active Expired
- 1965-08-13 GB GB3327/68A patent/GB1126353A/en not_active Expired
- 1965-08-13 GB GB3328/68A patent/GB1126354A/en not_active Expired
- 1965-08-17 CH CH1154865A patent/CH466298A/de unknown
- 1965-08-20 DE DE19651620294 patent/DE1620294A1/de active Pending
- 1965-08-20 DE DE1620295A patent/DE1620295C3/de not_active Expired
- 1965-08-23 BE BE668687D patent/BE668687A/xx unknown
- 1965-08-23 IL IL24214A patent/IL24214A/xx unknown
- 1965-08-23 SE SE10988/65A patent/SE322227B/xx unknown
- 1965-08-23 GB GB36070/65A patent/GB1112334A/en not_active Expired
- 1965-08-23 SE SE02594/70A patent/SE351641B/xx unknown
- 1965-08-23 BR BR172393/65A patent/BR6572393D0/pt unknown
- 1965-08-23 CA CA938,842A patent/CA953297A/en not_active Expired
- 1965-08-23 NO NO159442A patent/NO120580B/no unknown
- 1965-08-23 BR BR172394/65A patent/BR6572394D0/pt unknown
- 1965-08-23 FI FI652007A patent/FI46968C/fi active
- 1965-08-23 BG BG013266A patent/BG17566A3/xx unknown
- 1965-08-23 MC MC580A patent/MC542A1/xx unknown
- 1965-11-23 FR FR39424A patent/FR4985M/fr not_active Expired
- 1965-11-23 FR FR39423A patent/FR5364M/fr not_active Expired
-
1966
- 1966-05-23 GB GB22856/66A patent/GB1133376A/en not_active Expired
- 1966-06-08 NL NL6607936A patent/NL6607936A/xx unknown
- 1966-06-08 SE SE7842/66A patent/SE345040B/xx unknown
- 1966-06-08 BR BR180263/66A patent/BR6680263D0/pt unknown
- 1966-07-08 GB GB30882/66A patent/GB1120488A/en not_active Expired
- 1966-07-29 BR BR181707/66A patent/BR6681707D0/pt unknown
- 1966-08-08 NL NL6611133A patent/NL6611133A/xx unknown
-
1967
- 1967-02-18 ES ES337005A patent/ES337005A1/es not_active Expired
-
1970
- 1970-02-27 SE SE02593/70A patent/SE350500B/xx unknown
-
1971
- 1971-10-01 CY CY61371A patent/CY613A/xx unknown
- 1971-12-31 MY MY1971223A patent/MY7100223A/xx unknown
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