CH411802A - Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper - Google Patents

Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper

Info

Publication number
CH411802A
CH411802A CH1020563A CH1020563A CH411802A CH 411802 A CH411802 A CH 411802A CH 1020563 A CH1020563 A CH 1020563A CH 1020563 A CH1020563 A CH 1020563A CH 411802 A CH411802 A CH 411802A
Authority
CH
Switzerland
Prior art keywords
producing
semiconductor body
doped zone
doped
zone
Prior art date
Application number
CH1020563A
Other languages
German (de)
English (en)
Inventor
Patalong Hubert Dr Dipl-Phys
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH411802A publication Critical patent/CH411802A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Silicon Compounds (AREA)
CH1020563A 1962-12-12 1963-08-19 Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper CH411802A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0082822 1962-12-12

Publications (1)

Publication Number Publication Date
CH411802A true CH411802A (de) 1966-04-30

Family

ID=7510628

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1020563A CH411802A (de) 1962-12-12 1963-08-19 Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper

Country Status (5)

Country Link
AT (1) AT240417B (ref)
BE (1) BE641092A (ref)
CH (1) CH411802A (ref)
GB (1) GB1014288A (ref)
NL (1) NL298176A (ref)

Also Published As

Publication number Publication date
AT240417B (de) 1965-05-25
NL298176A (ref)
BE641092A (ref) 1964-06-11
GB1014288A (en) 1965-12-22

Similar Documents

Publication Publication Date Title
AT280349B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH427044A (de) Verfahren zur Herstellung eines Halbleiterkörpers mit einem geschützten pn-Übergang
CH519789A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
AT321994B (de) Reaktor und verfahren zur herstellung einer halbleiteranordnung in diesem reaktor
AT280350B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH458747A (de) Verfahren zur Herstellung geformter Gebilde
CH371187A (de) Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper
CH512144A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH491983A (de) Verfahren zur Herstellung von siliciumhaltigen Polyäthern
CH444835A (de) Verfahren zur Herstellung von Epoxyalkoholen
CH395349A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH520405A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH415861A (de) Verfahren zur Herstellung dünnschichtiger Gitterstrukturen
CH418466A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH474856A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH400371A (de) Verfahren zur Herstellung einer elektrisch unsymmetrischen Halbleiteranordnung
AT257556B (de) Verfahren zur Herstellung von Alkoholen
CH519790A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH444826A (de) Verfahren und Vorrichtung zur Herstellung einer Halbleiteranordnung
CH404778A (de) Verfahren zur Herstellung eines supraleitenden Körpers
AT299309B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
AT268222B (de) Verfahren zur Herstellung von ungesättigten Alkoholen
CH470759A (de) Verfahren zur Herstellung eines Halbleiterbauelementes
AT256210B (de) Verfahren zur Herstellung eines Koaxialkabels
AT240417B (de) Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper