CH411802A - Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper - Google Patents
Verfahren zur Herstellung einer dotierten Zone in einem HalbleiterkörperInfo
- Publication number
- CH411802A CH411802A CH1020563A CH1020563A CH411802A CH 411802 A CH411802 A CH 411802A CH 1020563 A CH1020563 A CH 1020563A CH 1020563 A CH1020563 A CH 1020563A CH 411802 A CH411802 A CH 411802A
- Authority
- CH
- Switzerland
- Prior art keywords
- producing
- semiconductor body
- doped zone
- doped
- zone
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Structural Engineering (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0082822 | 1962-12-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH411802A true CH411802A (de) | 1966-04-30 |
Family
ID=7510628
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1020563A CH411802A (de) | 1962-12-12 | 1963-08-19 | Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper |
Country Status (5)
Country | Link |
---|---|
AT (1) | AT240417B (en:Method) |
BE (1) | BE641092A (en:Method) |
CH (1) | CH411802A (en:Method) |
GB (1) | GB1014288A (en:Method) |
NL (1) | NL298176A (en:Method) |
-
0
- NL NL298176D patent/NL298176A/xx unknown
-
1963
- 1963-08-16 AT AT657463A patent/AT240417B/de active
- 1963-08-19 CH CH1020563A patent/CH411802A/de unknown
- 1963-11-19 GB GB4569463A patent/GB1014288A/en not_active Expired
- 1963-12-11 BE BE641092A patent/BE641092A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
NL298176A (en:Method) | |
BE641092A (en:Method) | 1964-06-11 |
GB1014288A (en) | 1965-12-22 |
AT240417B (de) | 1965-05-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AT280349B (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
CH427044A (de) | Verfahren zur Herstellung eines Halbleiterkörpers mit einem geschützten pn-Übergang | |
CH519789A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
AT321994B (de) | Reaktor und verfahren zur herstellung einer halbleiteranordnung in diesem reaktor | |
AT280350B (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
CH458747A (de) | Verfahren zur Herstellung geformter Gebilde | |
CH371187A (de) | Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper | |
CH491983A (de) | Verfahren zur Herstellung von siliciumhaltigen Polyäthern | |
CH512144A (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
CH444835A (de) | Verfahren zur Herstellung von Epoxyalkoholen | |
CH395349A (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
CH520405A (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
CH415861A (de) | Verfahren zur Herstellung dünnschichtiger Gitterstrukturen | |
CH418466A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
CH474856A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
CH400371A (de) | Verfahren zur Herstellung einer elektrisch unsymmetrischen Halbleiteranordnung | |
AT257556B (de) | Verfahren zur Herstellung von Alkoholen | |
CH519790A (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
CH444826A (de) | Verfahren und Vorrichtung zur Herstellung einer Halbleiteranordnung | |
CH404778A (de) | Verfahren zur Herstellung eines supraleitenden Körpers | |
AT299309B (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
AT268222B (de) | Verfahren zur Herstellung von ungesättigten Alkoholen | |
CH470759A (de) | Verfahren zur Herstellung eines Halbleiterbauelementes | |
AT256210B (de) | Verfahren zur Herstellung eines Koaxialkabels | |
AT240417B (de) | Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper |