CH408217A - Halbleitervorrichtung mit einem aus mehreren Bereichen unterschiedlicher Leitfähigkeit zusammengesetzten Halbleiterkörper - Google Patents
Halbleitervorrichtung mit einem aus mehreren Bereichen unterschiedlicher Leitfähigkeit zusammengesetzten HalbleiterkörperInfo
- Publication number
- CH408217A CH408217A CH462062A CH462062A CH408217A CH 408217 A CH408217 A CH 408217A CH 462062 A CH462062 A CH 462062A CH 462062 A CH462062 A CH 462062A CH 408217 A CH408217 A CH 408217A
- Authority
- CH
- Switzerland
- Prior art keywords
- regions
- body composed
- different conductivity
- semiconductor device
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/905—Cleaning of reaction chamber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/933—Germanium or silicon or Ge-Si on III-V
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/979—Tunnel diodes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US104421A US3267338A (en) | 1961-04-20 | 1961-04-20 | Integrated circuit process and structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH408217A true CH408217A (de) | 1966-02-28 |
Family
ID=22300393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH462062A CH408217A (de) | 1961-04-20 | 1962-04-16 | Halbleitervorrichtung mit einem aus mehreren Bereichen unterschiedlicher Leitfähigkeit zusammengesetzten Halbleiterkörper |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3267338A (en, 2012) |
| CH (1) | CH408217A (en, 2012) |
| DE (1) | DE1185292B (en, 2012) |
| FR (1) | FR1319936A (en, 2012) |
| GB (1) | GB989118A (en, 2012) |
| NL (1) | NL277300A (en, 2012) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1040400A (en) * | 1963-11-27 | 1966-08-24 | Standard Telephones Cables Ltd | Semiconductor device |
| US3457467A (en) * | 1965-06-03 | 1969-07-22 | Westinghouse Electric Corp | Heterojunction solar cell with shorted substrate |
| GB1134928A (en) * | 1966-11-22 | 1968-11-27 | Standard Telephones Cables Ltd | Varactor diode |
| US4137542A (en) * | 1977-04-20 | 1979-01-30 | International Business Machines Corporation | Semiconductor structure |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1094611A (en, 2012) * | 1952-12-19 | 1955-05-23 | ||
| US2770761A (en) * | 1954-12-16 | 1956-11-13 | Bell Telephone Labor Inc | Semiconductor translators containing enclosed active junctions |
| BE550586A (en, 2012) * | 1955-12-02 | |||
| US3111611A (en) * | 1957-09-24 | 1963-11-19 | Ibm | Graded energy gap semiconductor devices |
| US3008089A (en) * | 1958-02-20 | 1961-11-07 | Bell Telephone Labor Inc | Semiconductive device comprising p-i-n conductivity layers |
| FR1193194A (fr) * | 1958-03-12 | 1959-10-30 | Perfectionnements aux procédés de fabrication par diffusion des transistors et des redresseurs à jonctions | |
| GB882788A (en) * | 1958-07-05 | 1961-11-22 | Reinold Hagen | Process and apparatus for manufacturing bottles and the like neck-provided articles from thermoplastic material |
| US3104991A (en) * | 1958-09-23 | 1963-09-24 | Raytheon Co | Method of preparing semiconductor material |
| US2970229A (en) * | 1958-10-10 | 1961-01-31 | Sylvania Electric Prod | Temperature independent transistor with grain boundary |
| NL239785A (en, 2012) * | 1959-06-02 | |||
| NL252531A (en, 2012) * | 1959-06-30 | 1900-01-01 | ||
| FR1263548A (fr) * | 1959-07-14 | 1961-06-09 | Ericsson Telefon Ab L M | Dispositif semi-conducteur du type pnpn et son procédé de fabrication |
| FR1255899A (fr) * | 1959-08-05 | 1961-03-10 | Ibm | Oscillateur et son procédé de fabrication |
| US3176147A (en) * | 1959-11-17 | 1965-03-30 | Ibm | Parallel connected two-terminal semiconductor devices of different negative resistance characteristics |
| NL257217A (en, 2012) * | 1959-12-07 | |||
| US3119072A (en) * | 1960-01-07 | 1964-01-21 | Rca Corp | Rectifying circuits |
| NL260481A (en, 2012) * | 1960-02-08 | |||
| US3070762A (en) * | 1960-05-02 | 1962-12-25 | Texas Instruments Inc | Voltage tuned resistance-capacitance filter, consisting of integrated semiconductor elements usable in phase shift oscillator |
| US3054070A (en) * | 1960-12-30 | 1962-09-11 | Ibm | Oscillators operable selectively between oscillation and non-oscillation |
-
0
- NL NL277300D patent/NL277300A/xx unknown
-
1961
- 1961-04-20 US US104421A patent/US3267338A/en not_active Expired - Lifetime
-
1962
- 1962-04-12 DE DEJ21602A patent/DE1185292B/de active Pending
- 1962-04-16 CH CH462062A patent/CH408217A/de unknown
- 1962-04-18 GB GB15036/62A patent/GB989118A/en not_active Expired
- 1962-04-19 FR FR895015A patent/FR1319936A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3267338A (en) | 1966-08-16 |
| DE1185292B (de) | 1965-01-14 |
| GB989118A (en) | 1965-04-14 |
| NL277300A (en, 2012) | |
| FR1319936A (fr) | 1963-03-01 |
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