CH407335A - Halbleiter-Bauelemente und Verfahren zu seiner Herstellung - Google Patents
Halbleiter-Bauelemente und Verfahren zu seiner HerstellungInfo
- Publication number
- CH407335A CH407335A CH38864A CH38864A CH407335A CH 407335 A CH407335 A CH 407335A CH 38864 A CH38864 A CH 38864A CH 38864 A CH38864 A CH 38864A CH 407335 A CH407335 A CH 407335A
- Authority
- CH
- Switzerland
- Prior art keywords
- manufacture
- processes
- semiconductor components
- semiconductor
- components
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12583—Component contains compound of adjacent metal
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES84128A DE1209661B (de) | 1963-03-13 | 1963-03-13 | Verfahren zum Herstellen eines Halbleiterbauelements mit einer flaechenhaften Legierungselektrode |
Publications (1)
Publication Number | Publication Date |
---|---|
CH407335A true CH407335A (de) | 1966-02-15 |
Family
ID=7511482
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH38864A CH407335A (de) | 1963-03-13 | 1964-01-15 | Halbleiter-Bauelemente und Verfahren zu seiner Herstellung |
Country Status (4)
Country | Link |
---|---|
US (1) | US3298878A (de) |
CH (1) | CH407335A (de) |
DE (1) | DE1209661B (de) |
GB (1) | GB1028393A (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1300163B (de) * | 1967-06-29 | 1969-07-31 | Philips Nv | Verfahren zur Herstellung eines Halbleiterbauelementes mit einer Legierungselektrode |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL106110C (de) * | 1956-08-24 | |||
FR1184385A (fr) * | 1956-10-17 | 1959-07-21 | Thomson Houston Comp Francaise | Nouveau transistron à jonctions et dispositifs les utilisant |
BE580254A (de) * | 1958-07-17 | |||
US2992471A (en) * | 1958-11-04 | 1961-07-18 | Bell Telephone Labor Inc | Formation of p-n junctions in p-type semiconductors |
FR1217793A (fr) * | 1958-12-09 | 1960-05-05 | Perfectionnements à la fabrication des éléments semi-conducteurs | |
US3042565A (en) * | 1959-01-02 | 1962-07-03 | Sprague Electric Co | Preparation of a moated mesa and related semiconducting devices |
US3087100A (en) * | 1959-04-14 | 1963-04-23 | Bell Telephone Labor Inc | Ohmic contacts to semiconductor devices |
FR1253932A (fr) * | 1960-01-07 | 1961-02-17 | Transistrons Soc Ind Franc De | Perfectionnements aux structures de transistors et à leur fabrication |
US3025439A (en) * | 1960-09-22 | 1962-03-13 | Texas Instruments Inc | Mounting for silicon semiconductor device |
-
1962
- 1962-02-17 GB GB6570/64A patent/GB1028393A/en not_active Expired
-
1963
- 1963-03-13 DE DES84128A patent/DE1209661B/de active Pending
-
1964
- 1964-01-15 CH CH38864A patent/CH407335A/de unknown
- 1964-03-10 US US350842A patent/US3298878A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB1028393A (en) | 1966-05-04 |
DE1209661B (de) | 1966-01-27 |
US3298878A (en) | 1967-01-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AT259014B (de) | Halbleitereinrichtung und Verfahren zu deren Herstellung | |
AT304958B (de) | Befestigungsmittel und Verfahren zu seiner Herstellung | |
AT315916B (de) | Halbleiterbauelement und Verfahren zu seiner Herstellung | |
CH442453A (de) | Thermoelektrische Einrichtung und Verfahren zu ihrer Herstellung | |
CH489868A (de) | Reflektor und Verfahren zu seiner Herstellung | |
CH517359A (de) | Halbleiterelement und Verfahren zu dessen Herstellung | |
AT251650B (de) | Zusammengesetzte Halbleiteranordnung und Verfahren zu ihrer Herstellung | |
AT242477B (de) | Räumliches Tragwerk und Verfahren zu seiner Herstellung | |
CH489913A (de) | Feldeffekttransistor und Verfahren zu seiner Herstellung | |
CH406825A (de) | Behälter und Verfahren zu seiner Herstellung | |
AT275045B (de) | Haarwaschmittel und Verfahren zu seiner Herstellung | |
AT260319B (de) | Bleiakkumulator und Verfahren zu seiner Herstellung | |
CH528819A (de) | Halbleiterbauelement und Verfahren zu seiner Herstellung | |
CH422159A (de) | Dünnschichtkondensator und Verfahren zu seiner Herstellung | |
AT255570B (de) | Gesteuerter Gleichrichter und Verfahren zu dessen Herstellung | |
CH434486A (de) | Halbleiterschaltung und Verfahren zu deren Herstellung | |
CH401893A (de) | Nadelverbundstoff und Verfahren zu seiner Herstellung | |
AT244456B (de) | Halbleiterbauelement sowie Verfahren zu seiner Herstellung | |
AT270765B (de) | Elektrolumineszente Halbleiterdiode und Verfahren zu deren Herstellung | |
CH481851A (de) | Hochtemperaturbeständiger Formkörper und Verfahren zu seiner Herstellung | |
CH407335A (de) | Halbleiter-Bauelemente und Verfahren zu seiner Herstellung | |
AT239853B (de) | Flächentransistor und Verfahren zu seiner Herstellung | |
AT256212B (de) | Supraleiter und Verfahren zu ihrer Herstellung | |
CH413975A (de) | Halbleiterelement und Verfahren zu seiner Herstellung | |
CH492392A (de) | Selektives Unkrautvertilgungsmittel und Verfahren zu seiner Herstellung |