CH396229A - Halbleiter-Bauelement mit einem im wesentlichen einkristallinen Halbleiterkörper und vier Zonen abwechselnden Leitfähigkeitstyps - Google Patents

Halbleiter-Bauelement mit einem im wesentlichen einkristallinen Halbleiterkörper und vier Zonen abwechselnden Leitfähigkeitstyps

Info

Publication number
CH396229A
CH396229A CH147963A CH147963A CH396229A CH 396229 A CH396229 A CH 396229A CH 147963 A CH147963 A CH 147963A CH 147963 A CH147963 A CH 147963A CH 396229 A CH396229 A CH 396229A
Authority
CH
Switzerland
Prior art keywords
zones
conductivity type
alternating conductivity
essentially monocrystalline
semiconductor body
Prior art date
Application number
CH147963A
Other languages
German (de)
English (en)
Inventor
Patalong Hubert Dr Dipl-Phys
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH396229A publication Critical patent/CH396229A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
CH147963A 1962-06-19 1963-02-06 Halbleiter-Bauelement mit einem im wesentlichen einkristallinen Halbleiterkörper und vier Zonen abwechselnden Leitfähigkeitstyps CH396229A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES79974A DE1209660B (de) 1962-06-19 1962-06-19 Steuerbares Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper und vier Zonen abwechselnd entgegengesetzten Leitfaehigkeitstyps

Publications (1)

Publication Number Publication Date
CH396229A true CH396229A (de) 1965-07-31

Family

ID=7508574

Family Applications (1)

Application Number Title Priority Date Filing Date
CH147963A CH396229A (de) 1962-06-19 1963-02-06 Halbleiter-Bauelement mit einem im wesentlichen einkristallinen Halbleiterkörper und vier Zonen abwechselnden Leitfähigkeitstyps

Country Status (7)

Country Link
US (1) US3392313A (en, 2012)
CH (1) CH396229A (en, 2012)
DE (1) DE1209660B (en, 2012)
FR (1) FR1415513A (en, 2012)
GB (1) GB1037804A (en, 2012)
NL (1) NL290680A (en, 2012)
SE (1) SE301192B (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3832709A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Thyristor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2959681A (en) * 1959-06-18 1960-11-08 Fairchild Semiconductor Semiconductor scanning device
NL264084A (en, 2012) * 1959-06-23
DE1103389B (de) * 1959-10-14 1961-03-30 Siemens Ag Schaltanordnung mit einer Vierschichthalbleiteranordnung
US3175934A (en) * 1960-01-19 1965-03-30 Hitachi Ltd Semiconductor switching element and process for producing the same
DE1133038B (de) * 1960-05-10 1962-07-12 Siemens Ag Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps
NL129185C (en, 2012) * 1960-06-10
NL268728A (en, 2012) * 1960-06-10
BE623187A (en, 2012) * 1961-10-06

Also Published As

Publication number Publication date
SE301192B (en, 2012) 1968-05-27
NL290680A (en, 2012)
DE1209660B (de) 1966-01-27
GB1037804A (en) 1966-08-03
DE1209660C2 (en, 2012) 1966-10-13
US3392313A (en) 1968-07-09
FR1415513A (fr) 1965-10-29

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