CH386567A - Gegen Überspannung sich selbstschützende Halbleiter-Ventilanordnung - Google Patents

Gegen Überspannung sich selbstschützende Halbleiter-Ventilanordnung

Info

Publication number
CH386567A
CH386567A CH822260A CH822260A CH386567A CH 386567 A CH386567 A CH 386567A CH 822260 A CH822260 A CH 822260A CH 822260 A CH822260 A CH 822260A CH 386567 A CH386567 A CH 386567A
Authority
CH
Switzerland
Prior art keywords
self
valve assembly
assembly against
against overvoltage
semiconductor valve
Prior art date
Application number
CH822260A
Other languages
German (de)
English (en)
Inventor
Luescher Luescher Jakob
Zega Bogdan
Original Assignee
Comp Generale Electricite
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL131695D priority Critical patent/NL131695C/xx
Priority to NL266849D priority patent/NL266849A/xx
Application filed by Comp Generale Electricite filed Critical Comp Generale Electricite
Priority to CH822260A priority patent/CH386567A/de
Priority to DEC24530A priority patent/DE1169589B/de
Priority to US124039A priority patent/US3286137A/en
Priority to FR868204A priority patent/FR1295241A/fr
Priority to GB26070/61A priority patent/GB981301A/en
Publication of CH386567A publication Critical patent/CH386567A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
CH822260A 1960-07-19 1960-07-19 Gegen Überspannung sich selbstschützende Halbleiter-Ventilanordnung CH386567A (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL131695D NL131695C (en:Method) 1960-07-19
NL266849D NL266849A (en:Method) 1960-07-19
CH822260A CH386567A (de) 1960-07-19 1960-07-19 Gegen Überspannung sich selbstschützende Halbleiter-Ventilanordnung
DEC24530A DE1169589B (de) 1960-07-19 1961-07-04 Gegen UEberspannung sich selbst schuetzendes Halbleiterbauelement, sowie Verfahren zum Herstellen und Schaltung eines solchen Halbleiterbauelements
US124039A US3286137A (en) 1960-07-19 1961-07-14 Semi-conductor rectifier arrangement having self-protection against overvoltage
FR868204A FR1295241A (fr) 1960-07-19 1961-07-18 Dispositif redresseur semi-conducteur avec auto-protection contre les surtensions
GB26070/61A GB981301A (en) 1960-07-19 1961-07-18 Semi-conductor rectifier having self-protection against overvoltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH822260A CH386567A (de) 1960-07-19 1960-07-19 Gegen Überspannung sich selbstschützende Halbleiter-Ventilanordnung

Publications (1)

Publication Number Publication Date
CH386567A true CH386567A (de) 1965-01-15

Family

ID=4337016

Family Applications (1)

Application Number Title Priority Date Filing Date
CH822260A CH386567A (de) 1960-07-19 1960-07-19 Gegen Überspannung sich selbstschützende Halbleiter-Ventilanordnung

Country Status (5)

Country Link
US (1) US3286137A (en:Method)
CH (1) CH386567A (en:Method)
DE (1) DE1169589B (en:Method)
GB (1) GB981301A (en:Method)
NL (2) NL131695C (en:Method)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3427515A (en) * 1966-06-27 1969-02-11 Rca Corp High voltage semiconductor transistor
JPS4812397B1 (en:Method) * 1968-09-09 1973-04-20
US3666967A (en) * 1971-05-12 1972-05-30 Us Navy Self-destruct aluminum-tungstic oxide films
FR2737343B1 (fr) * 1995-07-28 1997-10-24 Ferraz Composant limiteur de courant et procede de realisation

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2895109A (en) * 1955-06-20 1959-07-14 Bell Telephone Labor Inc Negative resistance semiconductive element
US2914715A (en) * 1956-07-02 1959-11-24 Bell Telephone Labor Inc Semiconductor diode
US3141119A (en) * 1957-03-28 1964-07-14 Westinghouse Electric Corp Hyperconductive transistor switches
BE566141A (en:Method) * 1957-02-27 1900-01-01
US2980810A (en) * 1957-12-30 1961-04-18 Bell Telephone Labor Inc Two-terminal semiconductive switch having five successive zones
US2966434A (en) * 1958-11-20 1960-12-27 British Thomson Houston Co Ltd Semi-conductor devices
US3208887A (en) * 1961-06-23 1965-09-28 Ibm Fast switching diodes

Also Published As

Publication number Publication date
GB981301A (en) 1965-01-20
NL266849A (en:Method)
NL131695C (en:Method)
US3286137A (en) 1966-11-15
DE1169589B (de) 1964-05-06

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