CH320111A - Process for the production of bodies with at least one P-N boundary layer and semiconductor bodies produced by the process - Google Patents
Process for the production of bodies with at least one P-N boundary layer and semiconductor bodies produced by the processInfo
- Publication number
- CH320111A CH320111A CH320111DA CH320111A CH 320111 A CH320111 A CH 320111A CH 320111D A CH320111D A CH 320111DA CH 320111 A CH320111 A CH 320111A
- Authority
- CH
- Switzerland
- Prior art keywords
- bodies
- production
- boundary layer
- produced
- semiconductor
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US320111XA | 1952-08-13 | 1952-08-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH320111A true CH320111A (en) | 1957-03-15 |
Family
ID=21862629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH320111D CH320111A (en) | 1952-08-13 | 1953-08-12 | Process for the production of bodies with at least one P-N boundary layer and semiconductor bodies produced by the process |
Country Status (4)
Country | Link |
---|---|
BE (1) | BE522097A (en) |
CH (1) | CH320111A (en) |
DE (1) | DE967930C (en) |
GB (1) | GB738231A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2998335A (en) * | 1956-02-04 | 1961-08-29 | Telefunken Gmbh | Method and apparatusfor growing single crystals from molten bodies |
DE1040694B (en) * | 1956-08-27 | 1958-10-09 | Licentia Gmbh | Process for the manufacture of dry rectifiers |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL77451C (en) * | 1948-12-29 |
-
0
- BE BE522097D patent/BE522097A/xx unknown
-
1953
- 1953-08-11 GB GB22139/53A patent/GB738231A/en not_active Expired
- 1953-08-12 CH CH320111D patent/CH320111A/en unknown
- 1953-08-14 DE DEG12444A patent/DE967930C/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE967930C (en) | 1957-12-27 |
GB738231A (en) | 1955-10-12 |
BE522097A (en) |
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