CH320111A - Process for the production of bodies with at least one P-N boundary layer and semiconductor bodies produced by the process - Google Patents

Process for the production of bodies with at least one P-N boundary layer and semiconductor bodies produced by the process

Info

Publication number
CH320111A
CH320111A CH320111DA CH320111A CH 320111 A CH320111 A CH 320111A CH 320111D A CH320111D A CH 320111DA CH 320111 A CH320111 A CH 320111A
Authority
CH
Switzerland
Prior art keywords
bodies
production
boundary layer
produced
semiconductor
Prior art date
Application number
Other languages
German (de)
Inventor
Noel Hall Robert
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of CH320111A publication Critical patent/CH320111A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH320111D 1952-08-13 1953-08-12 Process for the production of bodies with at least one P-N boundary layer and semiconductor bodies produced by the process CH320111A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US320111XA 1952-08-13 1952-08-13

Publications (1)

Publication Number Publication Date
CH320111A true CH320111A (en) 1957-03-15

Family

ID=21862629

Family Applications (1)

Application Number Title Priority Date Filing Date
CH320111D CH320111A (en) 1952-08-13 1953-08-12 Process for the production of bodies with at least one P-N boundary layer and semiconductor bodies produced by the process

Country Status (4)

Country Link
BE (1) BE522097A (en)
CH (1) CH320111A (en)
DE (1) DE967930C (en)
GB (1) GB738231A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2998335A (en) * 1956-02-04 1961-08-29 Telefunken Gmbh Method and apparatusfor growing single crystals from molten bodies
DE1040694B (en) * 1956-08-27 1958-10-09 Licentia Gmbh Process for the manufacture of dry rectifiers

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL171020B (en) * 1948-12-29 Union Carbide Corp METHOD FOR SEPARATING ACID GASES FROM A STEAM CONTAINING GAS MIXTURE.

Also Published As

Publication number Publication date
BE522097A (en)
GB738231A (en) 1955-10-12
DE967930C (en) 1957-12-27

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