GB738231A - Improvements in and relating to semiconductor p-n junction units - Google Patents

Improvements in and relating to semiconductor p-n junction units

Info

Publication number
GB738231A
GB738231A GB22139/53A GB2213953A GB738231A GB 738231 A GB738231 A GB 738231A GB 22139/53 A GB22139/53 A GB 22139/53A GB 2213953 A GB2213953 A GB 2213953A GB 738231 A GB738231 A GB 738231A
Authority
GB
United Kingdom
Prior art keywords
proportions
relating
semiconductor
melt
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB22139/53A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB738231A publication Critical patent/GB738231A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Alloys for addition to a melt of pure germanium to produce a melt from which a semiconductive crystal can be grown consist of Sb and Ga in the proportions 20-60 : 1, and Sb and In in the proportions 1 : 2.5-5. An alloy of As and Ga in unspecified proportions is also mentioned. These alloys are added to the germanium melt in the proportions of 1-100 mg. Sb:Ga alloy, and 5-500 mg. Sb:In alloy respectively to 100 grams of germanium.
GB22139/53A 1952-08-13 1953-08-11 Improvements in and relating to semiconductor p-n junction units Expired GB738231A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US320111XA 1952-08-13 1952-08-13

Publications (1)

Publication Number Publication Date
GB738231A true GB738231A (en) 1955-10-12

Family

ID=21862629

Family Applications (1)

Application Number Title Priority Date Filing Date
GB22139/53A Expired GB738231A (en) 1952-08-13 1953-08-11 Improvements in and relating to semiconductor p-n junction units

Country Status (4)

Country Link
BE (1) BE522097A (en)
CH (1) CH320111A (en)
DE (1) DE967930C (en)
GB (1) GB738231A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2998335A (en) * 1956-02-04 1961-08-29 Telefunken Gmbh Method and apparatusfor growing single crystals from molten bodies
DE1040694B (en) * 1956-08-27 1958-10-09 Licentia Gmbh Process for the manufacture of dry rectifiers

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL171020B (en) * 1948-12-29 Union Carbide Corp METHOD FOR SEPARATING ACID GASES FROM A STEAM CONTAINING GAS MIXTURE.

Also Published As

Publication number Publication date
CH320111A (en) 1957-03-15
DE967930C (en) 1957-12-27
BE522097A (en)

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