CH318329A - Verstärkerschaltung mit Transistoren - Google Patents
Verstärkerschaltung mit TransistorenInfo
- Publication number
- CH318329A CH318329A CH318329DA CH318329A CH 318329 A CH318329 A CH 318329A CH 318329D A CH318329D A CH 318329DA CH 318329 A CH318329 A CH 318329A
- Authority
- CH
- Switzerland
- Prior art keywords
- transistors
- amplifier circuit
- amplifier
- circuit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Amplifiers (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL318329X | 1952-11-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH318329A true CH318329A (de) | 1956-12-31 |
Family
ID=19783883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH318329D CH318329A (de) | 1952-11-05 | 1953-11-03 | Verstärkerschaltung mit Transistoren |
Country Status (6)
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3162770A (en) * | 1957-06-06 | 1964-12-22 | Ibm | Transistor structure |
| DE1079212B (de) * | 1958-06-30 | 1960-04-07 | Siemens Ag | Halbleiteranordnung mit teilweise negativer Stromspannungscharakteristik, insbesondere Schaltdiode |
| NL260007A (US06582424-20030624-M00016.png) * | 1960-01-14 | |||
| US3160828A (en) * | 1960-01-25 | 1964-12-08 | Westinghouse Electric Corp | Radiation sensitive semiconductor oscillating device |
| DE1207509B (de) * | 1962-05-02 | 1965-12-23 | Siemens Ag | Gesteuertes Halbleiterstromtor mit mehreren Zonen |
| GB1098979A (en) * | 1965-07-03 | 1968-01-10 | Marconi Co Ltd | Improvements in or relating to high frequency transistor amplifiers |
-
0
- NL NLAANVRAGE7117576,A patent/NL173581B/xx unknown
- BE BE523990D patent/BE523990A/xx unknown
-
1953
- 1953-11-01 DE DEN7968A patent/DE969211C/de not_active Expired
- 1953-11-02 GB GB30227/53A patent/GB747695A/en not_active Expired
- 1953-11-03 FR FR1086214D patent/FR1086214A/fr not_active Expired
- 1953-11-03 CH CH318329D patent/CH318329A/de unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE969211C (de) | 1958-05-14 |
| BE523990A (US06582424-20030624-M00016.png) | |
| FR1086214A (fr) | 1955-02-10 |
| GB747695A (en) | 1956-04-11 |
| NL173581B (nl) |
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