CH253109A - Verfahren zur Herstellung einer Sperrschichtzelle und nach diesem Verfahren erhaltene Sperrschichtzelle. - Google Patents

Verfahren zur Herstellung einer Sperrschichtzelle und nach diesem Verfahren erhaltene Sperrschichtzelle.

Info

Publication number
CH253109A
CH253109A CH253109DA CH253109A CH 253109 A CH253109 A CH 253109A CH 253109D A CH253109D A CH 253109DA CH 253109 A CH253109 A CH 253109A
Authority
CH
Switzerland
Prior art keywords
barrier cell
manufacturing
barrier
cell obtained
cell
Prior art date
Application number
Other languages
German (de)
English (en)
Inventor
Gloeilampenfabrieken N Philips
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH253109A publication Critical patent/CH253109A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/045—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02444—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/0431—Application of the selenium or tellurium to the foundation plate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/046—Provision of discrete insulating layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Photoreceptors In Electrophotography (AREA)
CH253109D 1944-08-08 1946-08-30 Verfahren zur Herstellung einer Sperrschichtzelle und nach diesem Verfahren erhaltene Sperrschichtzelle. CH253109A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL253109X 1944-08-08

Publications (1)

Publication Number Publication Date
CH253109A true CH253109A (de) 1948-02-15

Family

ID=19781189

Family Applications (1)

Application Number Title Priority Date Filing Date
CH253109D CH253109A (de) 1944-08-08 1946-08-30 Verfahren zur Herstellung einer Sperrschichtzelle und nach diesem Verfahren erhaltene Sperrschichtzelle.

Country Status (7)

Country Link
US (1) US2468527A (en(2012))
BE (1) BE467879A (en(2012))
CH (1) CH253109A (en(2012))
DE (1) DE915593C (en(2012))
FR (1) FR942904A (en(2012))
GB (1) GB637736A (en(2012))
NL (2) NL66146C (en(2012))

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE516590A (en(2012)) * 1951-10-29
DE1090768B (de) * 1957-05-11 1960-10-13 Licentia Gmbh Verfahren zur Herstellung von Selentrockengleichrichtern
US2892136A (en) * 1957-09-09 1959-06-23 Int Rectifier Corp Rectifier with multiple barrier layers
NL275667A (en(2012)) * 1961-04-28

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT153134B (de) * 1936-06-13 1938-04-11 Aeg Verfahren zur Herstellung von Trockenplattengleichrichtern.
US2221596A (en) * 1938-01-22 1940-11-12 Fides Gmbh Method of manufacturing dry rectifiers
NL51047C (en(2012)) * 1938-06-07
BE436338A (en(2012)) * 1938-09-09
DE742762C (de) * 1939-03-15 1943-12-10 Philips Patentverwaltung Verfahren zur Herstellung eines Sperrschichtelektrodensystems mit einer Selenelektrode

Also Published As

Publication number Publication date
GB637736A (en) 1950-05-24
BE467879A (en(2012)) 1900-01-01
DE915593C (de) 1954-07-26
NL66146C (en(2012)) 1900-01-01
US2468527A (en) 1949-04-26
NL118416B (en(2012)) 1900-01-01
FR942904A (fr) 1949-02-22

Similar Documents

Publication Publication Date Title
CH251015A (de) Verfahren zur Herstellung einer elektrischen Spule und nach diesem Verfahren hergestellte Spule.
CH261980A (de) Flächengebilde und Verfahren zu dessen Herstellung.
CH268537A (de) Verfahren zur Herstellung von feuchtigkeitsbeständigen Filmen.
CH250900A (de) Verfahren zur Herstellung einer Pyrazol-5-on-Verbindung.
CH253109A (de) Verfahren zur Herstellung einer Sperrschichtzelle und nach diesem Verfahren erhaltene Sperrschichtzelle.
CH248479A (de) Verfahren zur Herstellung von Anilin-N-d-ribosid.
CH243733A (de) Verfahren zur Herstellung von Prothesen.
CH255236A (de) Verfahren zur Herstellung einer Sperrschichtzelle und nach diesem Verfahren hergestellte Selenzelle.
CH239309A (de) Verfahren zur Herstellung einer Radbereifung und nach diesem Verfahren hergestellte Radbereifung.
CH255886A (de) Verfahren zur Schädlingsbekämpfung.
CH247210A (de) Verfahren zur Herstellung von Handschuhen oder Halbhandschuhen.
CH251386A (de) Verfahren zur Herstellung von Adipinsäure.
CH247197A (de) Verfahren zur Herstellung von metallenen Topfreinigern.
CH254387A (de) Selen-Halbleiter und Verfahren zu dessen Herstellung.
CH265767A (de) Verfahren zur Herstellung von Schädlingsbekämpfungsmitteln und nach diesem Verfahren hergestelltes Mittel.
AT168083B (de) Verfahren zur Herstellung von 1-d-Ribitylamino-3,4-xylol
CH247229A (de) Verfahren zur Herstellung von Aryldicyandiamiden.
CH241182A (de) Verfahren zur Herstellung einer isolierenden Leichtbauplatte.
CH255335A (de) Verfahren zur Schädlingsbekämpfung.
CH259752A (de) Verfahren zur Schädlingsbekämpfung.
CH243643A (de) Verfahren zur Herstellung eines Schleifmittels und nach diesem Verfahren hergestelltes Schleifmittel.
CH259824A (de) Stabilisierter Film und Verfahren zu dessen Herstellung.
CH241657A (de) Verfahren zur Herstellung künstlicher Gebilde.
CH237783A (de) Verfahren zur Herstellung von Schwimmseife.
CH260201A (de) Verfahren zur Herstellung eines Harnstoffderivates.