US2468527A - Blocking-layer cell - Google Patents

Blocking-layer cell Download PDF

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Publication number
US2468527A
US2468527A US661022A US66102246A US2468527A US 2468527 A US2468527 A US 2468527A US 661022 A US661022 A US 661022A US 66102246 A US66102246 A US 66102246A US 2468527 A US2468527 A US 2468527A
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US
United States
Prior art keywords
selenium
layer
blocking
blocking layer
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US661022A
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English (en)
Inventor
Willem Christiaan Van Geel
Esselin Ludovicus Au Lambertus
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Hartford National Bank and Trust Co
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Hartford National Bank and Trust Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hartford National Bank and Trust Co filed Critical Hartford National Bank and Trust Co
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Publication of US2468527A publication Critical patent/US2468527A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/045—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02444—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/0431—Application of the selenium or tellurium to the foundation plate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/046—Provision of discrete insulating layers

Definitions

  • This invention relates to a method of applying a blocking layer, more particularly consisting of selenium, onto an electrode for a blocking layer cell, and to a blocking layer cell comprising such a blocking layer.
  • non-genetic blocking layers consist of a synthetic resin and were precipitated from a solution on to' the surface to be coated.
  • Such a method has first of all the drawback that only those materials can be provided that are soluble in a suitable medium.
  • it appears that such layers are not always very homogeneous of composition and thickness in regard to the blocking effect.
  • the present invention has for its object to avoid the aforesaid drawbacks and to obtain other advantages. It is characterized in that the blocking layer material is applied by disintegration, through ion bombardment, of the material to be applied (sputtering) and is precipitated on the carrier for the blocking layer.
  • a blocking layer applied by means of the method according to the invention is very homogeneous. This is visible even with the naked eye when observing a plate carrying a blocking layer thus established under an inclined beam of light. In this case one definite interference colour is observed.
  • Another advantage, which is more particularly inherent to a selenium blocking layer consists in that the selenium thus applied is highly resistant to chemical attack. At variance with selenium layers provided in the usual way, which are attacked even at a normal temperature by various substances, notably nitric acid, a layer applied by means of the method according to the invention only dissolves at a high temperature in nitric acid.
  • blockin layer cells can be obtained which have a high and well reproducible breakdown voltage which is to be ascribed to the high homogeneity and compactness of the layer; in addition the forward current has a suitable value.
  • a blocking layer cell in which one of the electrodes consists of selenium first of all a blocking layer is formed by making a liquid act upon the surface of the selenium layer, followed by another blocking-layer forming treatment according to the aforesaid method of disintegration.
  • a layer of selenium 3 is applied on to an aluminium carrier plate I which is roughened and furnished with a layer of carbon 2.
  • a volatile halide e. g. tin chloride.
  • the selenium surface is smoothed by means of a press, the surface of the pressing plate having previously been coated with a resin-forming liquid e. g. quinoline. After this the plate is heated in a furnace at about 200 C., the selenium being converted into the conducting crystalline modification.
  • a resin forming liquid for instance triethanolamine, is sprayed on to the selenium surface, thus forming a layer of resin 4 having a thickness of several tenths of a micron.
  • the assembly is placed in a space in front of a plateshaped selenium electrode (cathode), the latter being connected to the negative side of asource of potential of several kilovolts, whereas another plate-shaped electrode is connected to the positive side of the same source.
  • the selenium-coated plate is now placed in the field between the two electrodes, the free selenium side of the plate I, 2 facing the cathode.
  • the space is exhausted down to-a pressure of about 100 units.
  • the current amounts to several times ten ma.
  • the thickness of the selenium layer disintegrated by ion bombardment depends on the time during which the distintegration is effected.
  • the disintegration is continued until the thickness'amounts to several .tenths of a micron.
  • This thickness may be adjusted in accordance with the purpose for Before formation After formation
  • the reverse voltage is the voltage to be applied to make a current of 100 ma. flow in the blocking direction. All measurements have been made on cells having a diameter of 45 mm. It is remarkablethat, in contradistinction to hitherto manufactured blocking layer cells, which after formation exhibit, it is true. a higher reverse voltage but a reduced forward current, cells made by means of the method according to the invention exhibit an increased forward current after formation. Furthermore, it has been found that cells established by means of the method according to the invention retain their electrical properties during operation.
  • a method of manufacturing a blocking layer cell comprising the steps of ionically disintegrating an element selected from the group consisting of selenium and sulfur, and precipitating said disintegrated element on a selenium electrade to form a blocking layer thereon.
  • a method of manufacturing a blocking layer cell which comprises the steps of ionically disintegrating an element from the group consisting of selenium and sulfur in air, and precipitating said disintegrated element on a selenium electrode to form a blocking layer thereon.
  • a method of manufacturing a blocking layer cell which comprises the steps of forming a layer of selenium on a base, converting the selenium into a conducting crystalline modification,
  • a method of manufacturing a blocking layer cell which comprises the steps of forming a layer of selenium on a base, converting the selenium into a conducting crystalline modification, applying a liquid to said selenium layer to form a' blocking layer thereon, ionically disintegrating selenium, and precipitating said disintegrated selenium onsaid selenium layer to form a blocking layer thereon.
  • a method of manufacturing a blocking layer cell which comprises the steps of forming a layer of selenium on a base, converting the selenium into a conducting crystalline modification, applying a resin-forming liquid to said selenium layer 5 to form a layer of resin, ionically disintegrating 40 cell which comprises the steps of forming a layer same.
  • a method of manufacturing a blocking layer of selenium on a base converting the selenium into a conducting crystalline modification, applying a resin-forming liquid to said selenium layer to form a layer of resin, ionically disintegrating sulfur, and precipitating said disintegrated sulfur on said selenium layer to form a blocking layer thereon.
  • a method of manufacturing a blocking layer cell which comprises the steps of forming a layer of selenium on a base, applying quinoline to said selenium layer, heating said selenium layer to convert the selenium to the conducting crystalline modification thereof, applying triethanolamine to said selenium layer to form a resinous layer, ionically disintegrating selenium, and precipitating said disintegrated selenium on said resinous layer to form a blocking layer thereon.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Photoreceptors In Electrophotography (AREA)
US661022A 1944-08-08 1946-04-10 Blocking-layer cell Expired - Lifetime US2468527A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL253109X 1944-08-08

Publications (1)

Publication Number Publication Date
US2468527A true US2468527A (en) 1949-04-26

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ID=19781189

Family Applications (1)

Application Number Title Priority Date Filing Date
US661022A Expired - Lifetime US2468527A (en) 1944-08-08 1946-04-10 Blocking-layer cell

Country Status (7)

Country Link
US (1) US2468527A (en(2012))
BE (1) BE467879A (en(2012))
CH (1) CH253109A (en(2012))
DE (1) DE915593C (en(2012))
FR (1) FR942904A (en(2012))
GB (1) GB637736A (en(2012))
NL (2) NL66146C (en(2012))

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2892136A (en) * 1957-09-09 1959-06-23 Int Rectifier Corp Rectifier with multiple barrier layers
DE1090768B (de) * 1957-05-11 1960-10-13 Licentia Gmbh Verfahren zur Herstellung von Selentrockengleichrichtern
US3250964A (en) * 1961-04-28 1966-05-10 Ibm Semiconductor diode device and method of making it

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE516590A (en(2012)) * 1951-10-29

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2221596A (en) * 1938-01-22 1940-11-12 Fides Gmbh Method of manufacturing dry rectifiers
US2223203A (en) * 1938-09-09 1940-11-26 Gen Electric Dry plate element and method of forming same
US2303522A (en) * 1939-03-15 1942-12-01 Hartford Nat Bank & Trust Co Method of manufacturing blockinglayer electrode systems

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT153134B (de) * 1936-06-13 1938-04-11 Aeg Verfahren zur Herstellung von Trockenplattengleichrichtern.
NL51047C (en(2012)) * 1938-06-07

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2221596A (en) * 1938-01-22 1940-11-12 Fides Gmbh Method of manufacturing dry rectifiers
US2223203A (en) * 1938-09-09 1940-11-26 Gen Electric Dry plate element and method of forming same
US2303522A (en) * 1939-03-15 1942-12-01 Hartford Nat Bank & Trust Co Method of manufacturing blockinglayer electrode systems

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1090768B (de) * 1957-05-11 1960-10-13 Licentia Gmbh Verfahren zur Herstellung von Selentrockengleichrichtern
US2892136A (en) * 1957-09-09 1959-06-23 Int Rectifier Corp Rectifier with multiple barrier layers
US3250964A (en) * 1961-04-28 1966-05-10 Ibm Semiconductor diode device and method of making it

Also Published As

Publication number Publication date
GB637736A (en) 1950-05-24
BE467879A (en(2012)) 1900-01-01
DE915593C (de) 1954-07-26
CH253109A (de) 1948-02-15
NL66146C (en(2012)) 1900-01-01
NL118416B (en(2012)) 1900-01-01
FR942904A (fr) 1949-02-22

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