CA999061A - Variable impedance circuit having a linear characteristic employing a ris field effect transistor - Google Patents

Variable impedance circuit having a linear characteristic employing a ris field effect transistor

Info

Publication number
CA999061A
CA999061A CA170,994A CA170994A CA999061A CA 999061 A CA999061 A CA 999061A CA 170994 A CA170994 A CA 170994A CA 999061 A CA999061 A CA 999061A
Authority
CA
Canada
Prior art keywords
field effect
effect transistor
variable impedance
impedance circuit
linear characteristic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA170,994A
Other languages
English (en)
Other versions
CA170994S (en
Inventor
Takaaki Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4757872A external-priority patent/JPS5323989B2/ja
Priority claimed from JP7298072U external-priority patent/JPS4932537U/ja
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of CA999061A publication Critical patent/CA999061A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using FET type devices
CA170,994A 1972-05-13 1973-05-11 Variable impedance circuit having a linear characteristic employing a ris field effect transistor Expired CA999061A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4757872A JPS5323989B2 (fr) 1972-05-13 1972-05-13
JP7298072U JPS4932537U (fr) 1972-06-20 1972-06-20

Publications (1)

Publication Number Publication Date
CA999061A true CA999061A (en) 1976-10-26

Family

ID=26387754

Family Applications (1)

Application Number Title Priority Date Filing Date
CA170,994A Expired CA999061A (en) 1972-05-13 1973-05-11 Variable impedance circuit having a linear characteristic employing a ris field effect transistor

Country Status (7)

Country Link
AT (1) AT354518B (fr)
CA (1) CA999061A (fr)
DE (1) DE2323471C2 (fr)
FR (1) FR2184815B1 (fr)
GB (1) GB1431199A (fr)
IT (1) IT989208B (fr)
NL (1) NL7306701A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57196627A (en) * 1981-05-29 1982-12-02 Hitachi Ltd Electronic circuit device
KR940005293B1 (ko) * 1991-05-23 1994-06-15 삼성전자 주식회사 게이트와 드레인이 중첩된 모오스 트랜지스터의 제조방법 및 그 구조
US10535651B2 (en) * 2016-10-12 2020-01-14 Mediatek Inc. Impedance circuit with poly-resistor
US10510823B2 (en) * 2016-10-12 2019-12-17 Mediatek Inc. Impedance circuit with poly-resistor
US10461702B2 (en) 2017-04-19 2019-10-29 Mediatek Inc. Amplifier circuit having poly resistor with biased depletion region
EP3998647A3 (fr) * 2017-09-01 2022-07-06 MediaTek Inc. Circuit d'impédance à poly-résistance

Also Published As

Publication number Publication date
DE2323471C2 (de) 1985-09-12
AT354518B (de) 1979-01-10
FR2184815B1 (fr) 1977-09-02
FR2184815A1 (fr) 1973-12-28
IT989208B (it) 1975-05-20
GB1431199A (en) 1976-04-07
DE2323471A1 (de) 1973-11-29
ATA417673A (de) 1979-06-15
NL7306701A (fr) 1973-11-15

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