NL7306701A - - Google Patents

Info

Publication number
NL7306701A
NL7306701A NL7306701A NL7306701A NL7306701A NL 7306701 A NL7306701 A NL 7306701A NL 7306701 A NL7306701 A NL 7306701A NL 7306701 A NL7306701 A NL 7306701A NL 7306701 A NL7306701 A NL 7306701A
Authority
NL
Netherlands
Application number
NL7306701A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4757872A external-priority patent/JPS5323989B2/ja
Priority claimed from JP7298072U external-priority patent/JPS4932537U/ja
Application filed filed Critical
Publication of NL7306701A publication Critical patent/NL7306701A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/02Multiple-port networks
    • H03H11/24Frequency-independent attenuators
    • H03H11/245Frequency-independent attenuators using field-effect transistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0738Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/007Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using FET type devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Networks Using Active Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
NL7306701A 1972-05-13 1973-05-14 NL7306701A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4757872A JPS5323989B2 (fr) 1972-05-13 1972-05-13
JP7298072U JPS4932537U (fr) 1972-06-20 1972-06-20

Publications (1)

Publication Number Publication Date
NL7306701A true NL7306701A (fr) 1973-11-15

Family

ID=26387754

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7306701A NL7306701A (fr) 1972-05-13 1973-05-14

Country Status (7)

Country Link
AT (1) AT354518B (fr)
CA (1) CA999061A (fr)
DE (1) DE2323471C2 (fr)
FR (1) FR2184815B1 (fr)
GB (1) GB1431199A (fr)
IT (1) IT989208B (fr)
NL (1) NL7306701A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57196627A (en) * 1981-05-29 1982-12-02 Hitachi Ltd Electronic circuit device
KR940005293B1 (ko) * 1991-05-23 1994-06-15 삼성전자 주식회사 게이트와 드레인이 중첩된 모오스 트랜지스터의 제조방법 및 그 구조
US10535651B2 (en) * 2016-10-12 2020-01-14 Mediatek Inc. Impedance circuit with poly-resistor
US10510823B2 (en) * 2016-10-12 2019-12-17 Mediatek Inc. Impedance circuit with poly-resistor
US10461702B2 (en) 2017-04-19 2019-10-29 Mediatek Inc. Amplifier circuit having poly resistor with biased depletion region
EP3998647A3 (fr) * 2017-09-01 2022-07-06 MediaTek Inc. Circuit d'impédance à poly-résistance

Also Published As

Publication number Publication date
AT354518B (de) 1979-01-10
DE2323471A1 (de) 1973-11-29
CA999061A (en) 1976-10-26
IT989208B (it) 1975-05-20
ATA417673A (de) 1979-06-15
DE2323471C2 (de) 1985-09-12
FR2184815B1 (fr) 1977-09-02
GB1431199A (en) 1976-04-07
FR2184815A1 (fr) 1973-12-28

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Legal Events

Date Code Title Description
BV The patent application has lapsed