CA996280A - Integrated circuit test transistor structure and method of fabricating the same - Google Patents

Integrated circuit test transistor structure and method of fabricating the same

Info

Publication number
CA996280A
CA996280A CA185,033A CA185033A CA996280A CA 996280 A CA996280 A CA 996280A CA 185033 A CA185033 A CA 185033A CA 996280 A CA996280 A CA 996280A
Authority
CA
Canada
Prior art keywords
fabricating
integrated circuit
same
transistor structure
circuit test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA185,033A
Other languages
English (en)
Other versions
CA185033S (en
Inventor
Ingrid E. Magdo
Steven Magdo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA996280A publication Critical patent/CA996280A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/162—Testing steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
CA185,033A 1972-12-29 1973-11-05 Integrated circuit test transistor structure and method of fabricating the same Expired CA996280A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US31912072A 1972-12-29 1972-12-29

Publications (1)

Publication Number Publication Date
CA996280A true CA996280A (en) 1976-08-31

Family

ID=23240934

Family Applications (1)

Application Number Title Priority Date Filing Date
CA185,033A Expired CA996280A (en) 1972-12-29 1973-11-05 Integrated circuit test transistor structure and method of fabricating the same

Country Status (6)

Country Link
US (1) US3774088A (it)
JP (1) JPS5132959B2 (it)
CA (1) CA996280A (it)
FR (1) FR2212621B1 (it)
GB (1) GB1441800A (it)
IT (1) IT1001593B (it)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2280203A1 (fr) * 1974-07-26 1976-02-20 Thomson Csf Procede d'ajustement de tension de seuil de transistors a effet de champ
US4078243A (en) * 1975-12-12 1978-03-07 International Business Machines Corporation Phototransistor array having uniform current response and method of manufacture
US4079408A (en) * 1975-12-31 1978-03-14 International Business Machines Corporation Semiconductor structure with annular collector/subcollector region
US4064527A (en) * 1976-09-20 1977-12-20 Intersil, Inc. Integrated circuit having a buried load device
JPS5793542A (en) * 1980-12-03 1982-06-10 Hitachi Ltd Semiconductor integrated circuit device
JPS5799907A (en) * 1980-12-12 1982-06-21 Hitachi Ltd Electromotive brush
US4413271A (en) * 1981-03-30 1983-11-01 Sprague Electric Company Integrated circuit including test portion and method for making
JPS59123242A (ja) * 1982-12-29 1984-07-17 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション テスト・デバイスを有する半導体基板
US4542340A (en) * 1982-12-30 1985-09-17 Ibm Corporation Testing method and structure for leakage current characterization in the manufacture of dynamic RAM cells
JPS61105028U (it) * 1984-12-14 1986-07-03
JPS63115330U (it) * 1987-01-22 1988-07-25
US5101152A (en) * 1990-01-31 1992-03-31 Hewlett-Packard Company Integrated circuit transfer test device system utilizing lateral transistors
JP2530722Y2 (ja) * 1990-07-18 1997-03-26 日本電気株式会社 半導体装置
US5214657A (en) * 1990-09-21 1993-05-25 Micron Technology, Inc. Method for fabricating wafer-scale integration wafers and method for utilizing defective wafer-scale integration wafers
US5217907A (en) * 1992-01-28 1993-06-08 National Semiconductor Corporation Array spreading resistance probe (ASRP) method for profile extraction from semiconductor chips of cellular construction
KR100375177B1 (ko) * 1995-05-19 2003-05-09 마츠시타 덴끼 산교 가부시키가이샤 반도체 장치의 검사방법
IT1296624B1 (it) * 1997-12-10 1999-07-14 Sgs Thomson Microelectronics Struttura e metodo per la valutazione di un dispositivo elettronico integrato.
DE10014914C2 (de) * 2000-03-17 2003-07-24 Infineon Technologies Ag Verfahren zur Herstellung und Überprüfung von Strukturen elektronischer Schaltungen in einem Halbleitersubstrat
RU174463U1 (ru) * 2017-03-17 2017-10-16 Федеральное государственное унитарное предприятие "Ростовский-на-Дону научно-исследовательский институт радиосвязи" (ФГУП "РНИИРС") Тестовый полевой транзистор Шоттки

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335340A (en) * 1964-02-24 1967-08-08 Ibm Combined transistor and testing structures and fabrication thereof
FR1064185A (fr) * 1967-05-23 1954-05-11 Philips Nv Procédé de fabrication d'un système d'électrodes

Also Published As

Publication number Publication date
US3774088A (en) 1973-11-20
JPS4998982A (it) 1974-09-19
GB1441800A (en) 1976-07-07
FR2212621B1 (it) 1977-09-30
IT1001593B (it) 1976-04-30
JPS5132959B2 (it) 1976-09-16
FR2212621A1 (it) 1974-07-26

Similar Documents

Publication Publication Date Title
CA978661A (en) Method of manufacturing an mos integrated circuit
CA963173A (en) Semiconductor device and method of manufacturing the semiconductor device
AU466690B2 (en) Semiconductor device and method of manufacturing the same
CA996280A (en) Integrated circuit test transistor structure and method of fabricating the same
CA963172A (en) Semiconductor device and method of manufacturing the device
AU473855B2 (en) Semiconductor device and method of manufacturing the device
CA977461A (en) Mos semiconductor structure with increased field threshold and method for making the same
CA998765A (en) Oil-filled electrical instrument and method of manufacturing the same
CA997870A (en) Semiconductor device and method of manufacturing the device
CA918300A (en) Semiconductor device and method of manufacturing the device
AU466927B2 (en) Semiconductor device and method of making thesame
CA891742A (en) Semiconductor integrated circuit and method of making the same
CA892276A (en) Semiconductor integrated circuit and method of making the same
CA902249A (en) Semiconductor device and method of making the same
AU479594B2 (en) Semiconductor device and method of manufacturing the semiconductor device
CA844234A (en) Mis integrated circuit and method of fabricating the same
CA836788A (en) Integrated circuit structure and method of making the same
CA831687A (en) Integrated circuit and method of making the same
CA916310A (en) Semiconductor devices and the method of manufacturing the same
AU4058172A (en) Semiconductor device and method of manufacturing the semiconductor device
CA884584A (en) Semiconductor integrated circuit structure and method of making the same
CA955690A (en) Integrated circuit and method of manufacturing same
CA917822A (en) Semiconductor integrated circuits and method of making same
CA906669A (en) Semiconductor device and method of manufacturing said device
CA858738A (en) Semiconductor device and method of manufacturing the same