US4071881A
(en)
*
|
1976-03-30 |
1978-01-31 |
E. I. Du Pont De Nemours And Company |
Dielectric compositions of magnesium titanate and devices thereof
|
US4089038A
(en)
*
|
1976-03-30 |
1978-05-09 |
E. I. Du Pont De Nemours And Co. |
Dielectric compositions of zirconates and/or aluminates and devices thereof
|
US4432035A
(en)
*
|
1982-06-11 |
1984-02-14 |
International Business Machines Corp. |
Method of making high dielectric constant insulators and capacitors using same
|
US4437139A
(en)
|
1982-12-17 |
1984-03-13 |
International Business Machines Corporation |
Laser annealed dielectric for dual dielectric capacitor
|
US4506026A
(en)
*
|
1982-12-22 |
1985-03-19 |
Tam Ceramics, Inc. |
Low firing ceramic dielectric for temperature compensating capacitors
|
ATE54038T1
(de)
*
|
1983-09-27 |
1990-07-15 |
Filtronics Components |
Temperaturkompensierter kondensator.
|
US4499520A
(en)
*
|
1983-12-19 |
1985-02-12 |
General Electric Company |
Capacitor with dielectric comprising poly-functional acrylate polymer and method of making
|
US5097800A
(en)
*
|
1983-12-19 |
1992-03-24 |
Spectrum Control, Inc. |
High speed apparatus for forming capacitors
|
US4842893A
(en)
*
|
1983-12-19 |
1989-06-27 |
Spectrum Control, Inc. |
High speed process for coating substrates
|
US5032461A
(en)
*
|
1983-12-19 |
1991-07-16 |
Spectrum Control, Inc. |
Method of making a multi-layered article
|
US5125138A
(en)
*
|
1983-12-19 |
1992-06-30 |
Spectrum Control, Inc. |
Miniaturized monolithic multi-layer capacitor and apparatus and method for making same
|
US5018048A
(en)
*
|
1983-12-19 |
1991-05-21 |
Spectrum Control, Inc. |
Miniaturized monolithic multi-layer capacitor and apparatus and method for making
|
JPS60226455A
(ja)
*
|
1984-04-19 |
1985-11-11 |
日立金属株式会社 |
磁気ヘツド用非磁性セラミツクス
|
US4851096A
(en)
*
|
1984-07-07 |
1989-07-25 |
Kyocera Corporation |
Method for fabricating a magneto-optical recording element
|
US4888246A
(en)
*
|
1985-05-23 |
1989-12-19 |
Matsushita Electric Industrial Co., Ltd. |
Dielectric thin film, and method for making the thin film
|
US4628405A
(en)
*
|
1985-08-19 |
1986-12-09 |
National Semiconductor Corporation |
Integrated circuit precision capacitor
|
JPH0644405B2
(ja)
*
|
1985-11-07 |
1994-06-08 |
株式会社住友金属セラミックス |
マイクロ波用誘電体磁器組成物
|
US4631633A
(en)
*
|
1985-12-23 |
1986-12-23 |
North American Philips Corporation |
Thin film capacitors and method of making the same
|
JPS62222512A
(ja)
*
|
1986-03-20 |
1987-09-30 |
キヤノン株式会社 |
誘電体材料
|
US4731695A
(en)
*
|
1987-02-17 |
1988-03-15 |
General Electric Company |
Capacitor and method for making same with high yield
|
US4835656A
(en)
*
|
1987-04-04 |
1989-05-30 |
Mitsubishi Mining And Cement Co., Ltd. |
Multi-layered ceramic capacitor
|
US4876628A
(en)
*
|
1987-09-08 |
1989-10-24 |
Tufts University |
Thin film ion conducting coating
|
US5354446A
(en)
*
|
1988-03-03 |
1994-10-11 |
Asahi Glass Company Ltd. |
Ceramic rotatable magnetron sputtering cathode target and process for its production
|
US5605609A
(en)
*
|
1988-03-03 |
1997-02-25 |
Asahi Glass Company Ltd. |
Method for forming low refractive index film comprising silicon dioxide
|
JPH01225149A
(ja)
*
|
1988-03-04 |
1989-09-08 |
Toshiba Corp |
キャパシタ及びその製造方法
|
DE68905668T2
(de)
*
|
1988-05-24 |
1993-10-14 |
Sumitomo Metal Ceramics Inc |
Dielektrische keramische Zusammensetzung.
|
US4888820A
(en)
*
|
1988-12-06 |
1989-12-19 |
Texas Instruments Incorporated |
Stacked insulating film including yttrium oxide
|
US5014158A
(en)
*
|
1989-04-11 |
1991-05-07 |
Matsushita Electric Industrial Co., Ltd. |
Laminated ceramic capacitor
|
US5140498A
(en)
*
|
1991-04-19 |
1992-08-18 |
Westinghouse Electric Corp. |
Method of producing a wound thin film capacitor
|
US5142437A
(en)
*
|
1991-06-13 |
1992-08-25 |
Ramtron Corporation |
Conducting electrode layers for ferroelectric capacitors in integrated circuits and method
|
US5189593A
(en)
*
|
1991-11-04 |
1993-02-23 |
Motorola, Inc. |
Integrated distributed resistive-capacitive network
|
US5191510A
(en)
*
|
1992-04-29 |
1993-03-02 |
Ramtron International Corporation |
Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices
|
KR100190558B1
(ko)
*
|
1995-03-04 |
1999-10-15 |
구본준 |
강유전체 및 이를 채용한 반도체장치의 커패시터
|
US5590017A
(en)
*
|
1995-04-03 |
1996-12-31 |
Aluminum Company Of America |
Alumina multilayer wiring substrate provided with high dielectric material layer
|
JP3929513B2
(ja)
*
|
1995-07-07 |
2007-06-13 |
ローム株式会社 |
誘電体キャパシタおよびその製造方法
|
US6255688B1
(en)
*
|
1997-11-21 |
2001-07-03 |
Agere Systems Guardian Corp. |
Capacitor having aluminum alloy bottom plate
|
US6783620B1
(en)
|
1998-10-13 |
2004-08-31 |
Matsushita Electronic Materials, Inc. |
Thin-laminate panels for capacitive printed-circuit boards and methods for making the same
|
US6114015A
(en)
*
|
1998-10-13 |
2000-09-05 |
Matsushita Electronic Materials, Inc. |
Thin-laminate panels for capacitive printed-circuit boards and methods for making the same
|
US6242299B1
(en)
|
1999-04-01 |
2001-06-05 |
Ramtron International Corporation |
Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode
|
US6339527B1
(en)
|
1999-12-22 |
2002-01-15 |
International Business Machines Corporation |
Thin film capacitor on ceramic
|
JP2002075783A
(ja)
*
|
2000-08-25 |
2002-03-15 |
Alps Electric Co Ltd |
温度補償用薄膜コンデンサ
|
UA77459C2
(en)
*
|
2001-11-03 |
2006-12-15 |
|
Thin-film capacitor and a method for producing the capacitor
|
IL154598A0
(en)
*
|
2003-02-24 |
2003-09-17 |
|
Capacitor
|
JP2005093597A
(ja)
*
|
2003-09-16 |
2005-04-07 |
Shinko Electric Ind Co Ltd |
薄膜キャパシタ及びその製造方法
|
US7285312B2
(en)
*
|
2004-01-16 |
2007-10-23 |
Honeywell International, Inc. |
Atomic layer deposition for turbine components
|
WO2008072448A1
(ja)
*
|
2006-12-12 |
2008-06-19 |
Murata Manufacturing Co., Ltd. |
積層セラミック電子部品の製造方法および積層セラミック電子部品
|
US9092582B2
(en)
|
2010-07-09 |
2015-07-28 |
Cypress Semiconductor Corporation |
Low power, low pin count interface for an RFID transponder
|
US8723654B2
(en)
|
2010-07-09 |
2014-05-13 |
Cypress Semiconductor Corporation |
Interrupt generation and acknowledgment for RFID
|
US9846664B2
(en)
|
2010-07-09 |
2017-12-19 |
Cypress Semiconductor Corporation |
RFID interface and interrupt
|
US8813325B2
(en)
*
|
2011-04-12 |
2014-08-26 |
Intermolecular, Inc. |
Method for fabricating a DRAM capacitor
|
DE102013109357A1
(de)
*
|
2013-08-29 |
2015-03-05 |
Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG |
Ionensensitive Schichtstruktur für einen ionensensitiven Sensor und Verfahren zur Herstellung derselben
|
CN111223669B
(zh)
*
|
2020-01-10 |
2021-08-03 |
河南理工大学 |
一种高储能密度的固态电介质薄膜电容器及其制备方法
|