CA981793A - Two-terminal nondestructive read jfet-npn transistor semiconductor memory - Google Patents

Two-terminal nondestructive read jfet-npn transistor semiconductor memory

Info

Publication number
CA981793A
CA981793A CA159,350A CA159350A CA981793A CA 981793 A CA981793 A CA 981793A CA 159350 A CA159350 A CA 159350A CA 981793 A CA981793 A CA 981793A
Authority
CA
Canada
Prior art keywords
jfet
terminal
semiconductor memory
npn transistor
transistor semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA159,350A
Other languages
English (en)
Other versions
CA159350S (en
Inventor
Dennis J. Lynes
Peter T. Panousis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA981793A publication Critical patent/CA981793A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
CA159,350A 1972-06-09 1972-12-19 Two-terminal nondestructive read jfet-npn transistor semiconductor memory Expired CA981793A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26141772A 1972-06-09 1972-06-09

Publications (1)

Publication Number Publication Date
CA981793A true CA981793A (en) 1976-01-13

Family

ID=22993213

Family Applications (1)

Application Number Title Priority Date Filing Date
CA159,350A Expired CA981793A (en) 1972-06-09 1972-12-19 Two-terminal nondestructive read jfet-npn transistor semiconductor memory

Country Status (12)

Country Link
US (1) US3753248A (it)
JP (1) JPS4963350A (it)
KR (1) KR780000459B1 (it)
BE (1) BE800605A (it)
CA (1) CA981793A (it)
DE (1) DE2328471A1 (it)
FR (1) FR2188238B1 (it)
GB (1) GB1429846A (it)
HK (1) HK45877A (it)
IT (1) IT984672B (it)
NL (1) NL7308042A (it)
SE (1) SE382515B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2348984A1 (de) * 1973-09-28 1975-04-24 Siemens Ag Anordnung mit feldeffekttransistoren
US3916222A (en) * 1974-05-28 1975-10-28 Nat Semiconductor Corp Field effect transistor switching circuit
JPS5185062A (ja) * 1975-01-24 1976-07-26 Hitachi Ltd Yunibaasarukatsupuringu
US4030083A (en) * 1975-04-04 1977-06-14 Bell Telephone Laboratories, Incorporated Self-refreshed capacitor memory cell
WO1986007487A1 (en) * 1985-06-07 1986-12-18 Anamartic Limited Electrical data storage elements
JP2783579B2 (ja) * 1989-03-01 1998-08-06 株式会社東芝 半導体装置
US5365477A (en) * 1992-06-16 1994-11-15 The United States Of America As Represented By The Secretary Of The Navy Dynamic random access memory device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3354440A (en) * 1965-04-19 1967-11-21 Ibm Nondestructive memory array
US3450967A (en) * 1966-09-07 1969-06-17 Vitautas Balio Tolutis Selenium memory cell containing silver up to 2 atomic percent adjacent the rectifying contact

Also Published As

Publication number Publication date
FR2188238B1 (it) 1976-09-17
FR2188238A1 (it) 1974-01-18
HK45877A (en) 1977-09-16
IT984672B (it) 1974-11-20
BE800605A (fr) 1973-10-01
US3753248A (en) 1973-08-14
GB1429846A (en) 1976-03-31
NL7308042A (it) 1973-12-11
KR780000459B1 (en) 1978-10-23
DE2328471A1 (de) 1973-12-20
SE382515B (sv) 1976-02-02
JPS4963350A (it) 1974-06-19

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